• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2002년도 추계종합학술대회
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• pp.486-489
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• 2002

본 논문에서는 50nm 이하의 double gate MOSFET의 특성을 조사하였다. 1.5V의 main gate 전압과 3V의 side gate 전압이 인가될 때 I-V 특성으로부터 IDsat=510$\mu$A/$\mu\textrm{m}$을 얻을 수 있었다. 이때, 전달 컨덕턴스는 111$\mu$A/V, subthreshold slope는 86mV/dec, DIBL값은 51.3mV이다. 그밖에 TCAD tool이 소자 시뮬레이터로서 적합함을 나타내었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.105-106
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• 2005

The impact ionization MOS (I-MOS) transistor with 50nm channel length is presented by using 2-D device simulator ISE-TCAD. The subthreshold slope cannot be steeper than kT/q since the subthreshold conduction is due to diffusion current. As MOSFETs are scaled down, this problem becomes significant and the subthreshold slope degrades which leads an increase in the off-current and off-state power dissipation. The I-MOS is based on a gated p-i-n structure and the subthreshold conduction is induced by impact ionization. The simulation results show that the subthreshold slope is 11.7 mV/dec and this indicates the I-MOS improves the switching speed and off-state characteristics.

• Journal of Biosystems Engineering
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• 제3권1호
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• pp.1-19
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• 1978

Power tiller is a major unit of agricultural machinery being used on farms in Korea. About 180.000 units are introduced by 1977 and the demand for power tiller is continuously increasing as the farm mechanization progress. Major farming operations done by power tiller are the tillage, pumping, spraying, threshing, and hauling by exchanging the corresponding implements. In addition to their use on a relatively mild slope ground at present, it is also expected that many of power tillers could be operated on much inclined land to be developed by upland enlargement programmed. Therefore, research should be undertaken to solve many problems related to an effective untilization of power tillers on slope ground. The major objective of this study was to find out the travelling and tractive characteristics of power tillers being operated on general slope ground.In order to find out the critical travelling velocity and stability limit of slope ground for the side sliding and the dynamic side overturn of the tiller and tiller-trailer system, the mathematical model was developed based on a simplified physical model. The results analyzed through the model may be summarized as follows; (1) In case of no collision with an obstacle on ground, the equation of the dynamic side overturn developed was: $$\sum_n^{i=1}W_ia_s(cos\alpha cos\phi-{\frac {C_1V^2sin\phi}{gRcos\beta})-I_{AB}\frac {v^2}{Rr}}=0$$ In case of collision with an obstacle on ground, the equation was: $$\sum_n^{i=1}W_ia_s\{cos\alpha(1-sin\phi_1)-{\frac {C_1V^2sin\phi}{gRcos\beta}\}-\frac {1}{2}I_{TP} \( {\frac {2kV_2} {d_1+d_2}\)-I_{AB}{\frac{V^2}{Rr}} \( \frac {\pi}{2}-\frac {\pi}{180}\phi_2 \} = 0 $$ (2) As the angle of steering direction was increased, the critical travelling veloc\ulcornerities of side sliding and dynamic side overturn were decreased. (3) The critical travelling velocity was influenced by both the side slope angle .and the direct angle. In case of no collision with an obstacle, the critical velocity $V_c$ was 2.76-4.83m/sec at $\alpha=0^\circ$, $\beta=20^\circ$ ; and in case of collision with an obstacle, the critical velocity $V_{cc}$ was 1.39-1.5m/sec at $\alpha=0^\circ$, $\beta=20^\circ$ (4) In case of no collision with an obstacle, the dynamic side overturn was stimu\ulcornerlated by the carrying load but in case of collision with an obstacle, the danger of the dynamic side overturn was decreased by the carrying load. (5) When the system travels downward with the first set of high speed the limit {)f slope angle of side sliding was $\beta=5^\circ-10^\circ$ and when travels upward with the first set of high speed, the limit of angle of side sliding was $\beta=10^\circ-17.4^\circ$ (6) In case of running downward with the first set of high speed and collision with an obstacle, the limit of slope angle of the dynamic side overturn was = $12^\circ-17^\circ$ and in case of running upward with the first set of high speed and collision <>f upper wheels with an obstacle, the limit of slope angle of dynamic side overturn collision of upper wheels against an obstacle was $\beta=22^\circ-33^\circ$ at $\alpha=0^\circ -17.4^\circ$, respectively. (7) In case of running up and downward with the first set of high speed and no collision with an obstacle, the limit of slope angle of dynamic side overturn was $\beta=30^\circ-35^\circ$ (8) When the power tiller without implement attached travels up and down on the general slope ground with first set of high speed, the limit of slope angle of dynamic side overturn was $\beta=32^\circ-39^\circ$ in case of no collision with an obstacle, and $\beta=11^\circ-22^\circ$ in case of collision with an obstacle, respectively.

• 한국수자원학회논문집
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• 제51권8호
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• pp.729-737
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• 2018

본 연구에서는 실내실험을 통하여 개량형 공압식 가동보를 대상으로 수로경사 변화를 고려한 유사의 수리학적 발달 과정을 분석하였다. 분석결과 보에 의하여 형성된 델타는 시간이 증가함에 따라 하류로 이동하며, 델타높이($h_d$)는 증가하였다. 또한 보에 도달 할수록 흐름이 약해지면서 델타의 이동속도($S_D$)는 감소하였다. 무차원 델타 위치($x_D/x$)가 증가할수록 무차원 델타의 유효높이($h_d/h_w$)와 무차원 저수지 용량($V_{xD}/V_x$)이 증가였다. 따라서 동일한 조건에서 수로경사(i)가 완만할수록 델타의 퇴적량($Q_s$)이 감소하게 되며, 델타의 체적($V_{xD}$) 발달에 큰 영향을 미치는 것으로 나타났다. 통수 초기 델타의 전면경사가 완만하며, 델타가 하류로 이동할수록 델타의 전면경사는 증가하였다. 또한 수로경사(i)가 완만할수록 델타의 전면부 길이 비($h_d/{\Delta}S$)는 1에 가까워지고, 무차원 델타의 높이($h_d/h$)와 무차원 델타의 이동속도($S_D/V_0$)가 감소하였다. 델타의 높이($h_d$)가 증가할수록 수심(h)은 감소하였으며, 보에 접근하는 유속($V_0$)과 델타의 이동속도($S_D$)도 감소하였다.

• 천문학회지
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• 제43권5호
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• pp.141-152
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• 2010

UBV I CCD photometry is obtained for the open clusters NGC 4609 and Hogg 15 in Crux. For NGC 4609, CCD data are presented for the first time. From new photometry we derive the reddening, distance modulus and age of each cluster - NGC 4609 : E(B-V ) = $0.37{\pm}0.03$, $V_0-M_V=10.60{\pm}0.08$, log $\tau$= 7.7 $\pm$ 0.1; Hogg 15 : E(B - V ) = 1.13 $\pm$ 0.11, $V_0-M_V$ = 12.50 $\pm$ 0.15, log $\tau$ $\lesssim$ 6.6. The young age of Hogg 15 strongly implies that WR 47 is a member of the cluster. We also determine the mass function of these clusters and obtain a slope $\Gamma$ = -1.2 ($\pm$0.3) for NGC 4609 which is normal and a somewhat shallow slope (${\Gamma}=-0.95{\pm}0.5$) for Hogg 15.

• 전기전자학회논문지
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• 제23권2호
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• pp.704-709
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• 2019

본 논문에서는 다양한 열처리(annealing) 조건에서 tunneling field effect transistor(TFET)의 전기적 특성을 연구 하였다. TFET 샘플은 수소 혼합 가스(4 %) 및 중수소($D_2$) 혼합 가스 (4 %)를 사용하여 열처리를 진행하였으며 측정은 노이즈 차폐실에서 진행되었다. 실험 결과, 열처리 전과 비교하여 열처리 공정 후에 subthreshold slope(SS)이 33 mV / dec만큼 감소함을 확인할 수 있었다. 그리고 측정 온도 범위에서 온도가 증가할수록 $V_G=3V$ 조건에서 10 기압의 중수소 혼합 가스에 대해 평균 31.2 %의 노이즈가 개선됨을 확인할 수 있었다. $D_2$ 혼합 가스로 메탈 증착 후 열처리 공정(post metal annealing)을 실시한 결과, $I_D=100nA$ 조건에서 평균 30.7 %의 노이즈가 감소되었음을 확인할 수 있다.

• ETRI Journal
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• 제11권2호
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• pp.109-119
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• 1989

Based on the 2-dimensional charge-control simulation[4], a purely analytical model for MODFET's is proposed. In this model, proper treatment of the diffusion effect in the 2-DEG transport due to the gradual channel opening along the 2-DEG channel was made to explain the enhanced mobility and increased thershold voltage. The channel thickness and gate capacitance are experssed as functions of gate vlotage including subthreshold characteristics of the MODFET's analytically. By introducing the finite channel opening and an effective channel-length modulation, the slope of the saturation region of the I-V curves was modeled. The smooth transition of the I-V curves from linear-to-saturation region of the I-V curves was possible using the continuous Troffimenkoff-type of field-dependent mobility. Furthermore, a correction factor f was introduced to account for the finite transtition section forming between the GCA and the saturated section. This factor removes the large discrepanicies in the saturation region fo the I-V curves presicted by existing 1-dimensional models. The fitting parameters chosen in our model were found to be predictable and vary over relatively small range of values.

• 전자공학회논문지T
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• 제35T권2호
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• pp.6-12
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• 1998

박막의 SOI(Silicon-On-Insulator) 소자는 짧은 채널 효과(short channel effect), subthreshold slope의 개선, 이동도 향상, latch-up 제거 등 많은 이점을 제공한다. 반면에 이 소자는 current kink effect와 같이 정상적인 소자 동작에 있어 주요한 저해 요소인 floating body effect를 나타낸다. 본 논문에서는 이러한 문제를 해결하기 위해 T-형 게이트 구조를 갖는 SOI NMOSFET를 제안하였다. T-형 게이트 구조는 일부분의 게이트 산화막 두께를 다른 부분보다 30nm 만큼 크게 하여 TSUPREM-4로 시뮬레이션 하였으며, 이것을 2D MEDICI mesh를 구성하여 I-V 특성 시뮬레이션을 시행하였다. 부분적으로 게이트 산화층의 두께가 다르기 때문에 게이트 전계도 부분적으로 차이가 발생되어 충격 이온화 전류의 크기도 줄어든다. 충격 이온화 전류가 감소한다는 것은 current kink effect가 감소하는 것을 의미하며, 이것을 MEDICI 시뮬레이션을 통해 얻어진 충격 이온화 전류 곡선, I-V 특성 곡선과 정공 전류의 분포 형태를 이용하여 제안된 구조에서 current kink effect가 감소됨을 보였다.

• The Korean Journal of Physiology and Pharmacology
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• 제1권5호
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• pp.477-484
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• 1997

Intracellular recordings of oscillatory firing (bursting activity) were obtained from Purkinje cells (PCs) in rat cerebellar slices. Apamin inhibited post-burst hyperpolarizations (PBHs) progressively and finally terminated oscillatory firing activity of PCs. Apamin did not affect the amplitude or duration of the after-hyperpolarization (AHP) between spikes within the burst. In the voltage clamp mode, apamin shifted the whole-cell, quasi-steady state I/V relationship in an inward direction and abolished the zero slope resistance (ZSR) region by blocking outward current. Nickel ($Ni^{2+}$) terminated oscillatory activity and also abolished the ZSR region. However, $Ni^{2+}$ did not have progressive blocking action on the post-burst hyperpolarization before it blocked oscillatory activity. $Ni^{2+}$ blocked an inward current at potentials positive to approximately -65 mV, which was responsible for the ZSR region and outward current at more negative potentials. These data indicated that oscillatory activity of PCs is sustained by a balance between a slow $Ni^{2+}$-sensitive inward current and an apamin-sensitive outward current in the region of ZSR of the whole-cell I/V curve.

• 한국정보통신학회논문지
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• 제7권2호
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• pp.263-268
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• 2003

본 논문에서는 main gate(MG)와 side gate(SG)를 갖는 double gate(DG) MOSFET 구조를 조사하였다. MG가 50nm일 때 최적의 SG 전압은 약 3V임을 알 수 있었고, 각각의 MG에 대한 최적의 SG 길이는 약 70nm임을 알 수 있었다. DG MOSFET는 매우 작은 문턱 전압 roll-off 특성을 나타내고, 전류-전압 특성곡선에서 VMG=VDS=1.5V, VSG=3V인 곳에서 포화전류는 550$\mu\textrm{A}$/m임을 알 수 있었다. subthrehold slope는 82.6㎷/decade, 전달 컨덕턴스는 l14$\mu\textrm{A}$/$\mu\textrm{m}$ 그리고 DIBL은 43.37㎷이다 다중 입력 NAND 게이트 로직 응용에 대한 이 구조의 장점을 조사하였다. 이때, DG MOSFET에서 41.4GHz의 매우 높은 컷오프 주파수를 얻을 수 있었다.