• 대한전자공학회논문지
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• 제13권6호
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• pp.7-11
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• 1976

연산증폭기를 이용한 전압안정부저항회로를 제안하였으며, 전입력전압범위에 걸쳐서 회로를 해석하였다. 부저항영역에서 이 v-i특성이 2가지 구분된 요인에 의해서 이루어짐을 밝혔고, 이 개념에 의해서 역 v-i특성의 꼭지점을 해석하였다. 제안된 회로를 실험하여 얻은 입력 v-i특성의 직선성은 대단히 양호하였으며, 이들의 부저항치는 전압범위 ±1∼±5V에서 -86∼833Ω였다. 그리고 전입력전압범위에서 v-i특성을 검토했다. A voltage-stable negative resistance circuit with operational amplifier is proposed, and circuit analysis is given all the input voltage range. The behavior of the v-i characteristics in the nogative resistance region is devided into two causes, and top points in the input v-i characteristics of the circuit is analyzed with them. Experimental results of the v-i characteristics of the proposed circuit has a good linearity in the negative region with negative resistance, -86Ω∼-833Ω for the input voltage, ± 1∼± 5 colts. The v-i characteristics of the circuit in all the input voltage range is discussed.

• 대한전자공학회논문지SD
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• 제48권10호
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• pp.54-61
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• 2011

본 논문에서는 intrinsic-body cylindrical/surrounding gate SOI MOSFET의 I-V 특성 도출을 위한 간단한 해석적 모델을 제시하였다. Intrinsic 실리콘 채널 영역에서의 Poisson 방정식과 gate oxide 내에서의 Laplace 방정식을 해석적으로 풀어 소스와 드레인 양단 끝에서의 표면 전위 분포를 bisection method를 이용하여 구하였다. 구해진 표면 전위를 바탕으로 closed-form의 I-V 특성 식을 도출하였다. 도출된 I-V 특성 표현 식을 모의 실험한 결과, 소자의 parameter와 가해진 bias 전압에 대한 비교적 정확한 의존성을 확인할 수 있었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 A
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• pp.230-233
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• 1997

In this study, design and analysis of 3-phase induction moter are as follows. - Motor characteristics analysis by equivalent circuit ${\cdot}$ Motor characteristics analysis according to variation of rotor slot-tip ${\cdot}$ Motor characteristics analysis according to variation of rotor slot-mouse ${\cdot}$ Motor characteristics analysis according to variation of rotor slot-opening

• KIEE International Transactions on Electrophysics and Applications
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• 제2C권5호
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• pp.258-261
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• 2002

Electrical forming dependent current-voltage (I-V) and numerically derived differential conductance(dI／dV) characteristics have been presented in the multi-layer nano-crystalline silicon／oxygen (no-Si／O) superlattice. Distinct staircase-like features, indicating the presence of resonant tunnel barriers, are clearly observed in the dc I-V characteristics. Also, all samples showed a continuous change in current and zero conductivity around OV corresponding to the Coulomb blockade in the calculated dI／dV-V curve. Also, Ra-man scattering measurement showed the presence of a nano-crystalline Si structure. This result becomes a step in the right direction for the fabrication of silicon-based optoelectronic and quantum devices as well as for the replacement of silicon-on-insulator (SOI) in high speed and low power silicon MOSFET devices of the future.

• 전기학회논문지P
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• 제58권4호
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• pp.437-446
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• 2009

Solar, as an ideal renewable energy, it has inexhaustible, clean and safe characteristics. In order to improve the photovoltaic system efficiency and utilize the solar energy more fully, and the DC current and DC power vary with the irradiation and module temperature, it is necessary to study the characteristics of photovoltaic I-V and P-V according to the external factors. This paper presents the analysis of characteristics of photovoltaic I-V and P-V according to the irradiation and the module temperature. The results show that the DC current and the DC power of the photovoltaic system are increased along with the increasing values of irradiation.

• 전기학회논문지P
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• 제58권4호
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• pp.521-525
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• 2009

Solar, as an ideal renewable energy, has inexhaustible, clean and safe characteristics. However, solar energy is an extreme intermittent and inconstant energy source. In order to improve the photovoltaic system efficiency and utilize the solar energy more fully, and the DC current vary with the irradiation, it is necessary to study the characteristics of photovoltaic I-V according to the external factors. This paper presents the analysis of characteristics of photovoltaic I-V according to the irradiation. The results show that the DC current of the photovoltaic system are increased along with the increasing values of irradiation.

• 한국전기전자재료학회논문지
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• 제16권10호
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• pp.931-937
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• 2003

The principle of the superconducting vortex flow transistor (SVFT) is based on control of the Abrikosov vortex flowing along a channel. The induced voltage is controlled by a bias current and a control current, instead of external magnetic field. The device is composed of parallel weak links with a nearby current control line. We explained the process to get an I-V characteristic equation and described the method to induce the external and internal magnetic field by the Biot-Savarts law in this paper. The equation can be used to predict the I-V curves for fabricated device. From the equation we demonstrated that the current-voltage characteristics were changed with input parameters. I-V characteristics were simulated to analyze a SVFT with multi-channel by a computer program.

• 전자공학회논문지A
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• 제31A권8호
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• pp.34-45
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• 1994

We studied threshold voltages and I-V characteristics. considering short channel effect of the fully depleted thin film n-channel SOI MOSFET. We presented a charge sharing model when the back surface of short channel shows accumulation depletion and inversion state respectively. A degree of charge sharing can be compared according to each of back-surface conditions. Mobility is not assumed as constant and besides bulk mobility both the mobility defined by acoustic phonon scattering and the mobility by surface roughness scattering are taken into consideration. I-V characteristics is then implemented by the mobility including vertical and parallel electric field. kThe validity of the model is proved with the 2-dimensional device simulation (MEDICI) and experimental results. The threshold voltage and charge sharing region controlled by source or drain reduced with increasing back gate voltage. The mobility is dependent upon scattering effect and electric field. so it has a strong influence on I-V characteristics.

• ETRI Journal
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• 제27권3호
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• pp.319-325
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• 2005

In this paper the effect of temperature on the electrical properties of organic semiconductor disperse orange dye 25 (OD) have been examined. Thin films of OD have been deposited on $In_{2}O_{3}$ substrates using a centrifugal machine. DC current-voltage (I-V) characteristics of the fabricated devices $(Al/OD/In_{2}O_{3)$ have been evaluated at varying temperatures ranging from 40 to $60^{\circ}C$. A rectification behavior in these devices has been observed such that the rectifying ratio increases as a function of temperature. I-V characteristics observed in $Al/OD/In_{2}O_{3)$ devices have been classified as low temperature $({\leq} 50^{\circ}C)$ and high temperature characteristics (approximately $60^{\circ}C$). Low temperature characteristics have been explained on the basis of the charge transport mechanism associated with free carriers available in OD, whereas high temperature characteristics have been explained on the basis of the trapped space-charge-limited current. Different electrical parameters such as traps factor, free carrier density, trapped carrier density, trap density of states, and effective mobility have been determined from the observed temperature dependent I-V characteristics. It has been shown that the traps factor, effective mobility, and free carrier density increase with increasing values of temperature, whilst no significant change has been observed in the trap density of states.

• 전기학회논문지P
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• 제58권3호
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• pp.339-346
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• 2009

Photovoltaic (PV) energy is a renewable and harmless energy which offers many advantages. However, solar energy is an extreme intermittent and inconstant energy source. In order to improve the photovoltaic system efficiency and utilize the solar energy more fully, and the DC current and DC power vary with the irradiation and module temperature, it is necessary to study the characteristics of photovoltaic I-V and P-V according to the external factors. This paper presents the analysis of characteristics of photovoltaic I-V and P-V according to the irradiation and the module temperature. The results show that the DC current and the DC power of the photovoltaic system are increased along with the increasing values of irradiation and module temperature.