• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.169-170
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• 2006

A band pass filter for the V-band application with unique circuit and structure was designed and implemented using 2-metals, 3-BCB layers. In the mean while the effective electrical conductivity of metal layer was extracted and its value was $4{\times}10^7S/m$. The insertion loss of band pass filter at 60 GHz was 3.0 dB and group delay was below 0.1 ns.

• 공업화학
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• 제20권3호
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• pp.273-278
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• 2009

Heck coupling reaction을 이용해서 poly[2-(2,6-dimethylpyran-4-ylidene)malononitrile-alt-1,4-bis(dodecyloxy)-2,5-divinylbenzene] (PM-PPV), poly[2-{2,6-Bis-[2-(5-bromothiophen-2-yl)-vinyl]-pyran-4-ylidene}-malononitrile-alt-1,4-bis(dodecyloxy)-2,5-divinylbenzene] (PMT-PPV), poly[2-[2,6-Bis-(2-{4-[(4-bromophenyl)-phenylamino]-phenyl}-vinyl)-pyran-4-ylidene]-malononitrile-alt-1,4-bis(dodecyloxy)-2,5-divinylbenzene] (PMTPA-PPV)를 합성하였다. PM-PPV, PMT-PPV, PMTPA-PPV의 band gap은 각각 2.18 eV, 1.90 eV, 2.07 eV로 나타났다. LUMO 에너지 준위는 각각 3.65 eV, 3.54 eV, 3.62 eV로 나타났고 HOMO 에너지 준위는 각각 5.83 eV, 5.61 eV, 5.52 eV이고 소자를 제작하여 측정한 결과는 AM 1.5 G [1 sun condition ($100mA/cm^2$)]에서의 효율은 0.028%, 0.031%, 0.11%이고 open-circuit voltage (Voc)는 0.59 V~0.69 V로 나타났다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2005년도 추계종합학술대회
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• pp.583-586
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• 2005

In this paper, millimeter-wave monolithic integrated circuit (MIMIC) low noise amplifier (LNA) for V-band, which is applicable to 58 GHz, we designed and fabricated. We fabricated the module using the fabricated LNA chips. The V-band MIMIC LNA was fabricated using the high performance $0.1\;{\mu}\;m$ ${\Gamma}-gate$ pseudomorphic high electron mobility transistor (PHEMT). The MIMIC LNA was designed using active and passive device library, which is composed $0.1\;{\mu}\;m$ ${\Gamma}-gate$ PHEMT and coplanar waveguide (CPW) technology. The designed V-band MIMIC LNA was fabricated using integrated unit processes of active and passive device. Also we fabricated CPW-to-waveguide fin-line transition of WR-15 type for module. The Transmission Line was fabricated using RT Duroid 5880 substrate. The measured results of V-band MIMIC LNA and Module are shown $S_{21}$ gain of 13.1 dB and 8.3 dB at 58 GHz, respectively. The fabricated LNA chip and Module in this work show a good noise figure of 3.6 dB and 5.6 dB at 58 GHz, respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권2호
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• pp.267-275
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• 2015

In this paper, ZnO films were prepared by atomic layer deposition (ALD) and CdS films were deposited using chemical bath deposition (CBD) to form ZnO/CdS heterojunction. More accurate mapping of band arrangement of the ZnO/CdS heterojunction has been performed by analyzing its electrical and optical characteristics in depth by various methods including transmittance, x-ray photoemission spectroscopy (XPS), and ultraviolet photoemission spectroscopy (UPS). The optical bandgap energies ($E_g$) of ZnO and CdS were 3.27 eV and 2.34 eV, respectively. UPS was capable of extracting the ionization potential energies (IPEs) of the materials, which turned out to be 8.69 eV and 7.30 eV, respectively. The electron affinity (EA) values of ZnO and CdS calculated from IPE and $E_g$ were 5.42 eV and 4.96 eV, respectively. Energy-band structures of the heterojunction could be accurately drawn from these parameters taking the conduction band offset (CBO) into account, which will substantially help acquisition of the full band structures of the thin films in the CIGS solar-cell device and contribute to the optimal device designs.

• 한국세라믹학회지
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• 제56권3호
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• pp.325-330
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• 2019

Band convergence is known to be effective in improving thermoelectric performance by increasing the Seebeck coefficient without significantly reducing electrical conductivity. Decoupling of the Seebeck coefficient and electrical conductivity in converged bands is the key requirement. Yet, the degree of decoupling depends on the band parameters of the converging bands. Herein, we report theoretical transport properties of two valence bands as their energy difference changes from 0.25 eV to 0 eV. In order to demonstrate the effect of band parameters in transport, we first conducted calculations for the case where the two bands have the same parameters. Then, we conducted the same calculation by doubling the density-of-states effective mass of one valence band. Given that there are two bands, each band's effective mass was doubled one at a time while the other band's effective mass remained constant. We found that the decoupling was strongest when the bands participating in convergence had the same band parameters.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.267-270
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• 2004

A silver indium sulfide($AgInS_2$) epilayer was grown by the hot wall epitaxy method, which has not been reported in the literature. The grown $AgInS_2$ epilayer has found to be a chalcopyrite structure and evaluated to be high qualify crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks. are ascribed to the band-to-band transition. The valence band splitting of $AgInS_2$ was investigated by means of the photocurrent measurement. The crystal field splitting, $\ddot{A}cr$, and the spin orbit splitting, $\ddot{A}so$, have been obtained to be 0.150 eV and 0.009 eV at 10 K, respectively. And, the energy band gap at room temperature has been determined to be 1.868 eV. Also, the temperature dependence of the energy band gap, $E_g(T)$, was determined.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.347-347
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• 2012

Nickel Oxide (NiO) is a transition metal oxide of the rock salt structure that has a wide band gap of 3.5 eV. It has a variety of specialized applications due to its excellent chemical stability, optical, electrical and magnetic properties. In this study, we concentrated on the application of NiO thin film for transparent conducting oxide. The energy band structure, electronic and optical properties of Nickel Oxide (NiO) thin films grown on Si by using electron beam evaporation were investigated by X-Ray Photoelectron Spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and UV-Spectrometer. The band gap of NiO thin films determined by REELS spectra was 3.53 eV for the primary energies of 1.5 keV. The valence-band offset (VBO) of NiO thin films investigated by XPS was 3.88 eV and the conduction-band offset (CBO) was 1.59 eV. The UV-spectra analysis showed that the optical transmittance of the NiO thin film was 84% in the visible light region within an error of ${\pm}1%$ and the optical band gap for indirect band gap was 3.53 eV which is well agreement with estimated by REELS. The dielectric function was determined using the REELS spectra in conjunction with the Quantitative Analysis of Electron Energy Loss Spectra (QUEELS)-${\varepsilon}({\kappa},{\omega})$-REELS software. The Energy Loss Function (ELF) appeared at 4.8, 8.2, 22.5, 38.6, and 67.0 eV. The results are in good agreement with the previous study [1]. The transmission coefficient of NiO thin films calculated by QUEELS-REELS was 85% in the visible region, we confirmed that the optical transmittance values obtained with UV-Spectrometer is the same as that of estimated from QUEELS-${\varepsilon}({\kappa},{\omega})$-REELS within uncertainty. The inelastic mean free path (IMFP) estimated from QUEELS-${\varepsilon}({\kappa},{\omega})$-REELS is consistent with the IMFP values determined by the Tanuma-Powell Penn (TPP2M) formula [2]. Our results showed that the IMFP of NiO thin films was increased with increasing primary energies. The quantitative analysis of REELS provides us with a straightforward way to determine the electronic and optical properties of transparent thin film materials.

• 한국전자파학회논문지
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• 제13권1호
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• pp.74-79
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• 2002

본 논문에서는 Ka-band 위성 중계기용 국부 발진기에 사용하게 될 전압제어 발진기의 EM(Engineering Model)을 비선형 방법으로 설계하였다. 전압제어 발진기의 위상잡음을 개선하기 위하여 공진기로 사용되는 유전체 공진기와 결합하는 마이크로스트립 라인을 high impedance inverter로 구현함으로써 공진회로의 quality factor를 우수하게 유지하여 능동소자에 전달되도록 하였다. 개발된 전압제어 발진기는 0~12 V의 제어전압으로 9.7965~9.8032 GHz의 튜닝범위를 가지며 공급전력은 8V, 17mA를 필요로 한다. 제작된 전압제어 발진기의 위상잡음은 -96.51 dBc/Hz ⓐ10 KHz와 -116.5 dBc/Hz ⓐ100 KHz의 특성을 나타내며 출력전력은 7.33 dBm을 얻었다.

• 한국진공학회지
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• 제1권2호
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• pp.254-258
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• 1992

Iodine 화학수송법으로 성장한 Ni-doped CdGa2Se4와 undoped CdGa2Se4 단결정 의 PL 및 PLE 스펙트럼을 조사하였다. Undoped CdGa2Se4 단결정의 PL 스펙트럼에서는 전도대아래 준 연속적으로 분포된 electron trap과 deep level, 그리고 가전자대 위 0.07eV, 0.12eV에 있는 acceptor level 사이의 전자전이에 의한 2개의 emission band를 2.13eV와 1.20eV 영역에서 관측하였으며, Ni-doped 단결정에서는 Ni2+ 이온의 여기상태 3T1(3P)와 바 닥상태 3T1(3F) 사이의 전자전이에 의한 emission band를 1.48eV 영역에서 관측하였다. 이 러한 결과로부터 제안된 CdGa2Se4의 energy band model은 본 연구의 PL mechanism을 설명하는데 가능함을 보여주었다.

• 한국위성정보통신학회논문지
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• 제11권4호
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• pp.107-113
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• 2016

본 논문에서는 5.9 GHz에서 동작하는 광대역의 Butler Matrix에 기반한 차량 간 통신(V2X)용 안테나의 설계법이 제시된다. V2X가, 교통 시스템의 지능화, 모바일 통신 기능의 다각화, 주파수 자원의 포화문제 해소, 신호 송수신의 효율성을 극대화를 위한 빔 형성 및 빔 조향 안테나를 필요로 함에 따라, 부피가 크지 않으면서 요구사항을 충족할 수 있는 Butler Matrix 급전부와 그에 연결된 방사체를 구현한다. 기본적인 Butler Matrix를 구성하는 협대역 부품들과 방사체가 먼저 설계된 다음, 안테나 시스템의 차량 장착시에 발생될 주파수 천이에 대해 영향을 크게 받지 않기 위한 광대역용 Butler matrix의 구성품들이 설계된다. 협대역과 광대역 구조들의 성능들이 서로 비교되어, 빔 형성 및 빔 조향의 공통된 성능을 보이는 동시에, 주파수 영역에서 대역폭 관점에서의 차별성이 도시된다.