• The Journal of the Korea institute of electronic communication sciences
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• v.11 no.12
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• pp.1165-1174
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• 2016

The energy band gaps and the bowing parameters of zincblende InAs1-xN are determined by using an empirical pseudopotential method(EPM) within the improved virtual crystal approximation(VCA), which includes the disorder effect. The direct-band-gap bowing parameter calculated by using the EPM is 4.1eV for InAs1-xNx ($0{\leq}x{\leq}0.05$). The dependences of the band gaps of N-dilute InAs1-xNx on the temperature and composition are calculated by modifying the band anti-crossing(BAC) model. The calculation results are consistent with experimental values, and the coupling parameter CMN of InAs1-xNx is found to be equal to 1.8 by fitting the EPM data.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.9
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• pp.853-861
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• 2009

In this paper, we propose the architecture of a multi-band receiver which can receive X-band, Ku-band, K-band and Ka-band signals. For implementing this architecture, we designed a wideband and high power VCO with a buffer stage. In order that a buffer does not affect the characteristic of a oscillation in steady state condition, output impedance of a oscillation part and input impedance of a buffer are orthogonally crossed. The fabricated VCO meets the performance parameter of the multi-band receiver which has a $14.00{\sim}15.20\;GHz$ bandwidth with respect to the tuning voltage, $0.0{\sim}8.0\;V$, and output power of $12{\sim}13\;dBm$.

• Journal of The Korean Society of Grassland and Forage Science
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• v.14 no.2
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• pp.82-87
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• 1994

This study was planned to identify the variety of Italian ryegrass using electrophoresis. Thirty seven varieties of Italian ryegrass were tested by starch gel electrophoresis. The specific electrophoretic zymograms of each variety were observed by Alcohol dehydrogenase(ADH) and Esterase. The results were surnrnerized as follows; 1. AU varieties displayed two band zones by ADH and Rf values were 0.63 and 0.6 (Table 2, Fig. 2). 2. There were five band type for ADH isozyme of 37 varieties classified with isozyme banding pattern. According to the isozyme band type 7, 2, 6, 18 and 4 varieties belong to group, I, II, III, IV, and V, respectively (Table 2). 3. The varieties displayed single band zone for Esterase isozyme and Rf value was 1.00 (Table 2, Fig. 4). 4. According to banding type, Esterase isozyme of 37 varieties classified into 3 groups, 22, 8 and 7 varieties belong to group, I , II, and III, respectively (Table 2).

• The Journal of the Korea institute of electronic communication sciences
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• v.14 no.5
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• pp.877-886
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• 2019

The energy band gaps and optical constants of zincblende $In_yGa_{1-y}As_{1-x}N_x$ on the variation of temperature and composition are determined by using band anticrossing method. The energy band gaps are decreasing continuously in $In_yGa_{1-y}As_{1-x}N_x$ ($0{\leq}x{\leq}0.05$, $0{\leq}y{\leq}1.0$, 300K) and the bowing parameter is calculated as 0.522eV. The calculation results of energy band gaps are consistent with those of other studies. A refractive index n and a high-frequency dielectric constant ${\varepsilon}$ are calculated by a proposed modeling equation using the results of energy band gaps.

• Proceedings of the KIEE Conference
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• 2000.07e
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• pp.56-59
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• 2000

$CdGaInS_4$ and $CdGaInS_4:Er^{3+}$ single crystals crystallized in the rhombohedral(hexagonal) structure. with lattice constants $a=3.913{\AA},\;c=37.245{\AA}$ for $CdGaInS_4$, and $a=3.899{\AA}$ and $c=36.970{\AA}$ for $CdGaInS_4:Er^{3+}$. The optical absorption measured near the fundamental band edge showed that the optical energy band structure of these compounds had a direct and indirect band gap. the direct and indirect energy gaps are found to be 2.771 and 2.503 eV for $CdGaInS_4$, and 2.665 and 2.479 eV for $CdGaInS_4:Er^{3+}$ at 10 K. The temperature dependence of the optical energy gap was well represented by the Varshni equation. In $CdGaInS_4$, the values of ${\alpha},\;{\beta}$ of the direct and the indirect energy gap were found to be $7.57{\times}10^{-4}eV/K$. $6.53{\times}10^{-4}eV/K$ and 240K. 197K. and the values of ${\alpha}$ and ${\beta}$ of the direct and the indirect energy gap in the $CdGaInS_4:Er^{3+}$ were given by $8.28{\times}10^{-4}eV/K,\;2.08{\times}10^{-4}eV/K$ and 425 K, 283 K, respectively.

• Journal of IKEEE
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• v.19 no.3
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• pp.440-446
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• 2015

This study has examined susceptibility of LNA(Low Noise Amplifier) due to Front-Door Coupling under Narrow-Band high power electromagnetic wave. M/DFR(Malfunction/Destruction Failure Rate) was measured to investigate the diagnostic of IC test. In addition, decapsulation analysis was used to understand the inside of the chip state in LNA devices. The experiments is employed as an open-ended waveguide to study the destruction effects of LNA using a 2.45 GHz Magnetron as a high power electromagnetic wave. The susceptibility level of LNA was assessed by electric field strength, and its failure modes were observed. The malfunction of LNA device has showed as the type of self-reset and power-reset. The electric field strength of malfunction threshold is 524 V/m and 1150 V/m respectively. Also, he electric field of destruction threshold is 1530 V/m. Three types of damaged LNA were observed by decapsulation analysis: component, onchipwire, and bondwire destruction. Based on these results, the susceptibility of the LNA can be applied to a database to help elucidate the effects of microwaves on electronic equipment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.282-285
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• 2003

Single crystal $CuAlSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $410\;^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$ source at $680\;^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuAlSe_2$ thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}\;and\;295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.68\;{\times}\;10^{-4}eV/K)T^2/(T\;+\;155\;K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_2$ have been estimated to be 0.2026 eV and 0.2165 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the $\Delta$so definitely exists in the ${\Gamma}_5$ states of the valence band of the $CuAlSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.2
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• pp.125-129
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• 2005

Two kinds of physical treatments were examined for the analysis both of intrinsic surface and interior nature of CuInS $e_2$[CIS] and CuGaS $e_2$[CGS] films grown in separated systems. For the first method, a selenium protection layer which was immediately deposited after the growth of the CIS was investigated. The Se cap layer protects CISe surface from oxidation and contamination during the transport under ambient atmosphere. The Se cap was removed by thermal annealing at temperature above 15$0^{\circ}C$. After the decapping treatment at 2$25^{\circ}C$ for 60 min, ultraviolet photoemission and inverse photoemission measurements of the CIS film showed that its valence band maximum(VBM) and conduction band minimum (CBM) are located at 0.58 eV below and 0.52 eV above the Fermi level $E_{F}$, respectively. For the second treatment, an Ar ion beam etching was exploited. The etching with ion kinetic energy $E_{k}$ above 500 eV resulted in broadening of photoemission spectra of core signals and occasional development of metallic feature around $E_{F}$. These degradations were successfully suppressed by decreasing $E_{k}$ below 400 eV. CGS films etched with the beam of $E_{k}$ = 400 eV showed a band gap of 1.7 eV where $E_{F}$ was almost centered.st centered.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.12
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• pp.2498-2504
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• 2009

This paper compared the output limit value of the Korean weak electric field strength wireless device in the 8.2MHz band with the standard values of foreign countries. Through this, the study confirmed that the Korean regulation was lower by about 10-20dB than those of the USA or Europe. In order to prove this, the study measured outputs by entrusting the 8.2MHz EAS system to two measuring companies. As a result of these measurements, electric field strengths were shown to be $70.6dB{\mu}V/m$ and $68.3dB{\mu}V/m$ respectively, and these values were confirmed to exceed the current Korean standard of $59.8dB{\mu}V/m$. Accordingly, it is deemed necessary to review the specifications of the Korean standard in the 8.2MHz band.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.9
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• pp.2319-2325
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• 2009

This paper compared the output limits value of the Korean weak electric field strength wireless device in the 58kHz band with the standard values of foreign countries. Through this, the study confirmed that the Korean regulation was lower by about 50dB than those of the USA or Europe. In order to prove this, the study measured outputs by entrusting the 58kHz EAS system to two measuring companies. As a result of these measurements, electric field strengths were shown to be $112dB{\mu}V/m$ and $08dB{\mu}V/m$ respectively, and these values were confirmed to exceed the current Korean standard of $102.7dB{\mu}V/m$. Accordingly, it is deemed necessary to review the specifications of the Korean standard in the 58kHz band.