• Journal of Korea Water Resources Association
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• 제35권3호
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• pp.321-330
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• 2002

This study aims at the analysis of the geomorphological instantaneous unit hydrograph model (GIS-GIUH) with geographic information system for the rainfall-runoff analysis of watershed which is ungaged or doesn't have sufficient hydrologic data. The rainfall-runoff analysis was performed in Wi stream(Dongkok, Koro, Miseung, Byeungchun, Hyoreung, Museung) which is a representative experimental river basin of IHP. In the process of analysis of the GIUH model, developed GIS-GIUH model and Rosso-GIUH model were applied the study basin and computed hydrographs by these models were compared with observed hydrograph. The GiS-GIUH model shows more closely to the observed hydrograph than Rosso-GIUH model in the peak discharge of the hydrograph. For the development of the GIS-GIUH model, Gamma function factor N was given by N=3.25( $R_{B}$/ $R_{A}$)$^{0.126}$ $R_{L}$$^{-0.055}$, which is the relation of the watershed geomorphological factor, K was also obtained as K=1.50( $R_{A}$/( $R_{B}$. $R_{L}$))/$^{0.10}$.(( $L_{{\Omega}}$+ $L_{{\Omega}-1}$)/V)$^{0.37}$. As the results of analysis, it was found that GIS-GIUH model can be applied to an ungaged watersheds.eds.

• Journal of the Korean Ceramic Society
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• 제38권1호
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• pp.39-44
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• 2001

솔-젤법으로 S $r_{0.9}$B $i_{2.1}$T $a_2$$O_{9}$ stock solution을 합성하고, Ir $O_2$/ $SiO_2$/Si 및 기판 위에 스핀코팅법으로 약 2000$\AA$ 정도의 두께를 가지고 SBT 박막을 제조하였다. Pt/Ti $O_{x}$ 전극을 사용한 SBT 박막과 비교하였을 때 Ir $O_2$전극을 사용한 SBT 박막의 경우 더 낮은 급속 열처리 온도 즉, 72$0^{\circ}C$에서 형석상에서 층상 페롭스카이트 상으로의 상전이가 관찰되었다. 그리고, Ir $O_2$전극을 사용한 SBT 박막은 낮은 열처리에서 결정성장이 이루어졌다. Ir $O_2$전극을 사용한 SBT 박막은 $650^{\circ}C$에서 열처리하였을 때 포화된 이력곡선을 얻었지만, Pt/Ti $O_{x}$ 전극을 사용한 SBT 박막은 $700^{\circ}C$에서 열처리하였을 때 이력곡선이 관찰되었다. Ir $O_2$전극을 사용한 SBT 박막은 $700^{\circ}C$의 열처리에서 8.79 $\mu$C/$ extrm{cm}^2$ (3V)의 2Pr 값을 나타내었다.나타내었다.다.

• Korean Journal of Crystallography
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• 제12권4호
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• pp.197-206
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• 2001

A stoichiometric mixture of evaporating materials for AgInS₂ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films. AgInS₂ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE)system. The source and substrate temperatures were 680℃ and 410℃, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of AgInS₂ single crystal thin film mea-sured from Hall effect by van der Pauw method are 9.35×10/sup 16/㎤ and 294㎠/V·s at 293K respectively. The temperature dependence of the energy band gap of the AgInS₂ obtained from the absorption spectra was well described by the Varshni's relation , E/sub g/(T)=2.1365eV-(9.89×10/sup-3/eV/K/)T²(T+2930K). The crystal field and the spin-orbit splitting energies for the valence band of the AgInS₂ have been estimated to be 0.1541eV and 0.0129 eV, respectively, by means of the photocur-rent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the Δso definitely exists in the Γ/sub 5/ states of the valence band of the AgInS₂ /GaAs epilayer. The three photo-current peaks ovserved at 10K are ascribed to the A₁-, B-₁and C₁-exction peaks for n=1.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제17권5호
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• pp.179-186
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• 2007

Single crystal $CdGa_2Se_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with the hot wall epitaxy(HWE) system by evaporating the polycrystal source of $CdGa_2Se_4$ at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of single crystal $CdGa_2Se_4$ thin films measured with Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3},\;345cm^2/V{\cdot}s$ at 293 K, respectively. The photocurrent and the absorption spectra of $CdGa_2Se_4/SI$(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10 K. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation $E_g(T)=2.6400eV-(7.721{\times}10^{-4}eV/K)T^2/(T+399K)$. Using the photocurrent spectra and the Hopfield quasicubic model, the crystal field energy(${\Delta}cr$) and the spin-orbit splitting energy(${\Delta}so$) far the valence band of the $CdGa_2Se_4$ have been estimated to be 106.5 meV and 418.9 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-},\;B_{1^-},\;and\;C_{11}-exciton$ peaks.

• Journal of Astronomy and Space Sciences
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• 제17권1호
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• pp.19-32
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• 2000

A total of 1,018 observations (509 in B, 509 in V) of the eclipsing binary VW Cep was made during 7 nights from April through May in 1999 at Sobaeksan Optical Astronomy Observatory, using the CCD camera attached to the 61cm telescope. A time of minimum light of HJD2451327.2282 was determined from our data, and we constructed BV light curves with the data. Using, Wilson-Devinney’s binary model, we analized the light curves. The absolute dimension of $M_1=0.95M_\odot,M_2=0.33M_\odot,R_1=1.02R_\odot,R_2=0.66R_\odot$ of the VW Cep system were derived from our light curve solution and Kaszas et al. (1998) spectroscopic results.

• Economic and Environmental Geology
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• 제5권2호
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• pp.77-86
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• 1972

The system NaAlSiO_4-KAlSiO_4-SiO_2-H_2O, Bowen's "Petrogeny's Residua System" of course is extremely important in understanding the phase relationships of igneous and metamorphic rock in the continental crust. The phase relationships in this system, however, have not been completely established in the P-T range above the Mohorovicic discontinuity. They need to be established. In this study, the most probable sequence of P-T curves around a quaternary invariant point(~5Kb/${\sim}635^{\circ}C$) in the system using Schreinemakers' rule, is deduced, essentially on the basis of Morse's(1969a and b) experimental data. Possible modifications of the sequence of the P-T curves considering likely changes of the invariant chemogram are also considered. It is concluded that the sequence of P-T curves around the invariant point (~5Kb/${\sim}635^{\circ}C$) is (L), (Anl), (Or), (V), (Ne) and (Ab) on the P-T projection, where the P-T curve (L) is extended towards lower P-T regions, and the (Anl) curve is extended towards a region of higher temperature and lower pressure from the invariant point respectively.

• Journal of the Korean Electrochemical Society
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• 제2권4호
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• pp.221-226
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• 1999

Two needle cokes (NC-A and NC-B) that differ in both the texture and impurity content to each other were graphitized at $2000-3000{\circ}C$, and the average particle size, size distribution and surface area were compared after milling. Their anodic properties in Li secondary batteries were also analyzed. Two materials showed a higher degree of graphitization with an increase in the preparation temperature, however, the NC-B series was less graphitized than NC-A due to the presence of impurities and less ordered mosaic texture. The mein particle size of the milled powder was proportional to the degree of graphitization, but the surface area showed the opposite trend. The highly graphitized materials yielded powders of lower uniformity in the size distribution. The discharge capacity of the resulting carbons steadily decreased in the temperature range of 1000 to $2000^{\circ}C$ due to the depletion of carbonaceous interlayers that contain crystal defects. A later increase in the discharge capacity was observed at $>2000^{\circ}C$, which arises from the formation of graphitic interlayers. The milling process gave rise to a sloping discharge curve at >1.0 V, but this was converted to a plateau at <0.25V after a repeated cycling or additional heat-treatment at $1000^{\circ}C$. The discharge at >1.0V likely comes from the disordered surface structure formed during the milling process. The evolution of a plateau at <0.25 V suggests that this disordered structure transforms to a more ordered graphitic one upon a cell cycling or heat-treatment.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제14권6호
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• pp.244-252
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• 2004

A stoichiometric mixture of evaporating materials for $CuInSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $_CuInSe2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62\times10^{16}/\textrm{cm}^3$, 296 $\textrm{cm}^2$/Vㆍs at 293 K, respectively. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 1.1851 eV -($8.99\times10^{-4} eV/K)T^2$(T + 153 K). The crystal field and the spin-orbit splitting energies for the valence band of the CuInSe$_2$ have been estimated to be 0.0087 eV and 0.2329 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the Δso definitely exists in the $\Gamma$6 states of the valence band of the $CuInSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-, B_1$-와 $C_1$-exciton peaks for n = 1.

• Analytical Science and Technology
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• 제11권2호
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• pp.79-87
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• 1998

Consumers have recently preferred to purchase extensive UV intercepting products, which are waterproof and free from side effects on skin. During the testing of cytotoxicity (in-vitro) in neutral red (NR) method, cell survival ratio of UV-B interceptors decreased to just above 0.08 w/v%, and it was observed that the UV-A interceptors the ratio also decreased to just above 0.06 w/v%. In addition patch-tests of inorganic UV interceptors resulted in no skin irritation even below 10.0 and 11.25. In absorption curves, UV-B was most suitable for octyl methoxycinnamate (OMC) and UV-A for butyl methoxy dibenzoylmethane (BMDM). For this reason, $Nylonpoly^{TM}$ UVA/UVB the material of OMC and BMDM coated with Nylon & polyethylene, was used as the organic UV interceptor. Zinc oxide (ZnO) and titanium dioxide ($TiO_2$) was used as inorganic UV interceptors. The appropriate mixture ratio of ZnO and $TiO_2$ was 6 to 4:6% of ZnO, 4% of $TiO_2$ and 5% of $Nylonpoly^{TM}$ UVA/UVB were all combined and added to our sunscreen cream. The SPF value of in-vitro was 38.9. In practical application, each sun protection factor (SPF) duration of oil-in-water (O/W) emulsion and water-in-silicone (W/S) emulsion containing sunscreen cream of the same content showed that W/S type of sunscreen cream was 5 times as durable as the other. Therefore, this product is fit for use in swimming, climbing or skiing. This research is to minimize skin trouble caused by UV interceptors and to make one with proper softness, skin safety and UV intercepting efficiency.

• The Bulletin of The Korean Astronomical Society
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• 제35권2호
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• pp.79.1-79.1
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• 2010

세종 산개성단 탐사관측 연구의 일환으로 중년 산개성단 NGC 2353에 대한 UBVI CCD 측광을 수행하였다. 측광학적인 방법으로 성단 내의 구성원을 선정하였으며, 이로부터 이 성단의 성간소광과 거리를 각각 E(B-V)=$0.10\pm0.02mag$와 $d=1.17\pm0.04\;kpc$으로 얻었다. 성단 구성원의 공간적인 분포를 통해서 성단의 형태가 북서 방향에서 남동 방향을 잇는 축을 중심으로 타원의 형태를 띠고 있는 것을 발견하였다. Padova 그룹이 제시한 이론적인 등연령 곡선을 관측한 색등급도에 맞춤으로써 이 성단의 나이를 1억 3천만년으로 추정하였으며, 이는 기존 연구보다 나이가 많은 것으로 나타났다. 구성원의 거리지수 분포에서 이 성단의 거리지수보다 밝은 곳에 나타나는 쌍성의 분포를 Gaussian 분포와 맞추어 $46\pm4%$ 정도의 최소 쌍성비율을 추정하였다. 마지막으로 광도함수와 질량함수를 유도하였고, 질량함수의 기울기는 $\Gamma=-1.4\pm0.2$를 얻었다.