• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.15 no.3
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• pp.169-173
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• 2015

This study is to predict the life exponent by measuring, over 7 years, the insulation resistance of high-voltage cables in 22 kV operation for 13 years. We found out the lifetime index in order to determine the time-dependent trend of deteriorating performance of power cables. The insulation resistances decreased according to elapsed time. We found that: the initial measurements of the cable systems were in agreement with the deterioration properties of the Arrhenius Law. By analyzing the life curve of the cable system, we also verified that the value of the life exponent (n) in the v-t characteristics defined by Weibull distribution has values from 10 to 11. When designing the cable system, the initial value of life exponent was chosen as 9 without any grounding. We have verified that the theoretical grounding based on the design safety of n=9 was actually the best one available. In the short term, we apply our research result to the diagnosis and evaluation of the power cables. In the long run, however, we plan to reduce the cost of the installation and management of cable systems in operation at power stations.

• Journal of Pharmaceutical Investigation
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• v.39 no.3
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• pp.177-183
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• 2009

A rapid and sensitive reversed-phase high performance liquid chromatography (HPLC) method was developed for the determination of piroxicam in the rabbit plasma. After a treatment of plasma sample by liquid-liquid extraction, the drug was analyzed on an HPLC system with ultraviolet detection at 330 nm. HPLC was carried out using reversed-phase isocratic elution with a C18 column, a mobile phase of a mixture of acetonitril, doubly deionized water and acetic acid 43.74:56.00:0.26 v/v%) at a flow rate of 1.1 mL/min. The chromatograms showed good resolution and sensitivity and no interference of plasma. The calibration curve for the drug in plasma sample was linear over the concentration range of 0.01-2.0 ${\mu}$g/mL. The intra- and inter-day assay accuracies of this method ranged from 86.82% to 108.33% of normal values and the precision did not exceed 13% of relative standard deviation. The plasma concentration of piroxicam decreased to below the quantifiable limit at 12 hr after the i.v. bolus administration to rabbits following dose of 0.375 mg/kg yielding a apparen t plasma half life of 1.38 hr. The transdermal route prolongs plasma levels of piroxicam. The bioavailability, calculated from the dose-adjusted ratio of the $AUC_{transdermal}$ to the $AUC_{i.v.}$, was 7.44%. The plasma concentration of piroxicam was detected by 48 hr after the transdermal administration of patch at a dose of 32 mg/kg. This method was suitable for cutaneous absorption studies of piroxicam in the rabbit after transdermal administration of different types of dosages of the drug.

• Journal of Sensor Science and Technology
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• v.3 no.2
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• pp.11-15
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• 1994

The TSEE characteristics of LiF(Mg,Cu,Na,Si)phosphor for gamma and beta rays are described. The TSEE glow curve of this phosphor showed 5 peaks in the range from $20^{\circ}C$ to $400^{\circ}C$ and its main peak appeared at $240^{\circ}C$. The sensitivity of the phospor for $^{60}Co$ gamma rays was about 450counts/mR. TSEE energy dependence for various beta radiation was nearly constant (${\pm}10%$) in the mean beta particle energy range from 0.02MeV to 0.8MeV. The efficiency of TSEE of the phosphor for beta radiation was $(2{\sim}15){\times}10^{-3}$.

• Korean Journal of Materials Research
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• v.23 no.12
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• pp.714-721
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• 2013

A stoichiometric mixture of evaporating materials for $ZnAl_2Se_4$ single-crystal thin films was prepared in a horizontal electric furnace. These $ZnAl_2Se_4$ polycrystals had a defect chalcopyrite structure, and its lattice constants were $a_0=5.5563{\AA}$ and $c_0=10.8897{\AA}$.To obtain a single-crystal thin film, mixed $ZnAl_2Se_4$ crystal was deposited on the thoroughly etched semi-insulating GaAs(100) substrate by a hot wall epitaxy (HWE) system. The source and the substrate temperatures were $620^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single-crystal thin film was investigated by using a double crystal X-ray rocking curve and X-ray diffraction ${\omega}-2{\theta}$ scans. The carrier density and mobility of the $ZnAl_2Se_4$ single-crystal thin film were $8.23{\times}10^{16}cm^{-3}$ and $287m^2/vs$ at 293 K, respectively. To identify the band gap energy, the optical absorption spectra of the $ZnAl_2Se_4$ single-crystal thin film was investigated in the temperature region of 10-293 K. The temperature dependence of the direct optical energy gap is well presented by Varshni's relation: $E_g(T)=E_g(0)-({\alpha}T^2/T+{\beta})$. The constants of Varshni's equation had the values of $E_g(0)=3.5269eV$, ${\alpha}=2.03{\times}10^{-3}eV/K$ and ${\beta}=501.9K$ for the $ZnAl_2Se_4$ single-crystal thin film. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnAl_2Se_4$ were estimated to be 109.5 meV and 124.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $ZnAl_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n = 1 and $C_{21}$-exciton peaks for n = 21.

• Korean Journal of Materials Research
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• v.18 no.6
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• pp.339-346
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• 2008

Single-crystal $ZnIn_2S_4$ layers were grown on a thoroughly etched semi-insulating GaAs (100) substrate at $450^{\circ}C$ with a hot wall epitaxy (HWE) system by evaporating a $ZnIn_2S_4$ source at $610^{\circ}C$. The crystalline structures of the single-crystal thin films were investigated via the photoluminescence (PL) and Double-crystal X-ray rocking curve (DCRC). The temperature dependence of the energy band gap of the $ZnIn_2S_4$ obtained from the absorption spectra was well described by Varshni's relationship, $E_g(T)=2.9514\;eV-(7.24{\times}10^{-4}\;eV/K)T2/(T＋489K)$. After the as-grown $ZnIn_2S_4$ single-crystal thin films was annealed in Zn-, S-, and In-atmospheres, the origin-of-point defects of the $ZnIn_2S_4$ single-crystal thin films were investigated via the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_S$, $Zn_{int}$, and $S_{int}$ obtained from the PL measurements were classified as donor or acceptor types. Additionally, it was concluded that a heat treatment in an S-atmosphere converted $ZnIn_2S_4$ single crystal thin films into optical p-type films. Moreover, it was confirmed that In in $ZnIn_2S_4$/GaAs did not form a native defects, as In in $ZnIn_2S_4$ single-crystal thin films existed in the form of stable bonds.

• 한국해양학회지
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• v.8 no.2
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• pp.68-74
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• 1973

The present paper concerns the age determination and growth of butter fish, Pampus argenteus from the southwestern waters of Korea by otolith reading. 743 specimens taken by stow-net in the southern part of the Yellow Sea and northeastern part of the East China Sea during the period from October 1972 to September 1973 were examined. Results of the study are summarized as follows: 1. Sex ratio of females to males was found to be 2:1. 2. Ring marks on the otolith were found to be formed twice a year, once during the period of January-May and the other time in September. 3. The Lee's phenomenon was observed on the otolith sample. 4. The relationship between the radius of otolith(R) and fork length(L) was found to be as follows: R=0.3069+0.0133L 5. Calculated fork length at the time of otolith ring formation are found to be as follows:I-ring,71.67mm; II-ring, 125.05mm; III-ring, 168.65mm; IV-ring, 201.74mm; V-ring, 225.80mm; VI-ring, 240.84mm. 6. Maximum fork length calculated according to the diagram of Walford's growth transformation was found to be 281.5mm. 7. Growth curve, when related to the von Bertalanffy's equation, was laid out as $L_{t}=281.5[1-e$^{-0.674(t-0.128)}]$

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.2
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• pp.26-38
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• 1994

We demonstrate a repeatless transmission of 2.5 Gbps digital signal over 98 km opticla filbers using optical transmitter and optcial receiver which are designed and implemented using commercially available devices. The optical transmitter is realized by using a distributed feedback(DFB) laser. Temperature of the laser is thermoelectrically stabilized and the output optical power is also stabilized by using negative feedback. The output power of the transmitter is 0 dBm. The optical receiver consists of an InGaAs avalanche photodiode, a preamplifier. an automatic gain control amplifier, and a clock/data regenerator. We find an optimum decision threshold that gives the best receiver sensitivity form the measured V curve. The best sensitivity is -35.5dBm( BER-1*10S010T, PRBS=2S023T -1 ) and the overload power is -9 dBm. Finally, we achieve error free optical transmission with 98 km optical fibers. The exinction ration penalty of 2 dB. the chromatic dispersion penalty of 1 dB, and the total power penalty of 3.0 dB are measured. These results satisfy CCITT recommendation.

• Journal of Electrical Engineering and Technology
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• v.4 no.1
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• pp.98-105
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• 2009

This paper presents the characteristics of soil ionization for different water contents, and the parameters associated with the dynamic properties of a simple model grounding system subject to lightning impulse currents. The laboratory experiments for this study were carried out based on factors affecting the soil resistivities. The soil resistivities are adjusted with water contents in the range from 2 to 8% by weight. A test cell with a spherical electrode buried in the middle of the hemispherical container was used. As a result, the electric field intensity $E_c$ initiating ionization is decreased with the reduction of soil resistivities. Also, as the water content increased, the pre-ionization resistance $R_1$ and the post-ionization resistance $R_2$ became lower with increasing current amplitude. The time-lag to ionization $t_1$ and the time-lag to the second current peak $t_2$ at high applied voltages were significantly shorter than those of low applied voltages. It was found that the soil ionization behaviors are highly dependent on the water content and the applied voltage amplitude.

• Proceedings of the KIPE Conference
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• 2001.07a
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• pp.72-75
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• 2001

The solar energy is purity and infinity. Solar power converter were used to convert the electrical energy from the solar arrays to a stable and reliable power source. So much country research this solar energy system. The photovoltaic system is construct many solar cell array, In this paper, new implementation solar system was showed buck converter that V-I curve produced. This system can be used to study the short-term and long-term performances of solar cell and efficiency. This system is a far more cost effective and reliable replacement for field and outdoor flight testing. Study of buck converter, analysis and control shun t$\cdot$series connection characteristics of solar cell array.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.3
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• pp.99-104
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• 2011

A stoichiometric mixture of evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. The crystal structure of these compounds has a rhombohedral structure with lattice constants $a_0=3.953\;{\AA}$, $c_0=38.890\;{\AA}$. To obtain the single crystal thin films, $MgGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the double crystal X-ray rocking curve and X-ray diffraction ${\omega}-2{\theta}$ scans. The carrier density and mobility of $MgGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method were $6.21{\times}10^{18}\;cm^{-3}$ and 248 $cm^2/v{\cdot}s$ at 293 K, respectively. The optical absorption of $MgGa_2Se_4$ single crystal thin films was investigated in the temperature range from 10 K to 293 K. The temperature dependence of the optical energy gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's equation, $E_g(T)=E_g(0)-({\alpha}T^2/T+{\beta})$. The constants of Varshni's equation had the values of $E_g(0)=2.34\;eV$, ${\alpha}=8.81{\times}10^{-4}\;eV/K$ and ${\beta}=251\;K$, respectively.