• Electrical & Electronic Materials
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• v.1 no.3
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• pp.243-250
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• 1988

530A의 질화막과 23A의 엷은 산화막두께로 제작된 MNOS 소자의 기억트랩분포와 기억특성을 TSC방법과 C-V방법으로 조사하였다. 소자는 전기적으로 기억갱신이 가능하며 무전압유지가 반영구적임을 확인하였다. 기억트랩에 해당하는 TSC곡선을 분석하는데는 공간적, 에너지적인 트랩의 분포모형을 가정하고 best fitting법을 사용하였다. 그 결과 기억트랩은 질화막-산화막 계면에서 질화막안으로 10A 깊이로 분포되었으며 에너지준위는 질화막전도대 하단에서 2.35-2.38eV로 분포되어 있음을 밝혔다. 또한 방전기구는 산화막층을 통한 직접터널링과 열적여기를 함께 고려하여 설명할 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.232.1-232.1
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• 2013

본 연구에서는 asymmetric과 symmetric 구조의 n채널 MOSFET 소자의 성능 평가에 관한 실험을 진행하였다. 소자의 성능 평가에 있어 아날로그 회로에서의 DC 이득은 중요한 파라미터 중 하나 이다. 따라서 본 연구에서는 gm/ID 측정법을 이용하여 각 소자의 DC 이득 특성을 분석하였다. 게이트 전압에 따른 드레인 전류-드레인 전압 특성 곡선으로부터 early voltage 값을 추출하였다. 이후 최종적으로 수치적 계산을 통해 DC 이득 값을 추출하였다. 실험 결과 asymmetric과 symmetric 소자의 경우 early voltage 값이 각각 -34 V와 -15 V였으며 따라서 DC 이득 특성 또한 asymmetric 소자의 경우가 우수한 것을 확인하였다.

• Journal of the Korean Chemical Society
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• v.43 no.4
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• pp.407-411
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• 1999

Studies have been carried out on the fabrication of PPy/GC and PPy/Pt electrode modified with polypyrrole film and determination of Cr(VI) by using 3-electrode system with modified electrodes. Modified electrodes were able to easily fabricated by cyclic voltammetry scanned from +1.0V to -1.0V(vs. Ag/AgCl) at 50 mV/sec. Film thickness could be controlled at same condition by the number of cycling up to 26 times. Reduction behaviour of Cr(VI) at PPy/GC electrode could be seen at wide potential ranges from +0.6V to -0.5V(vs. Ag/AgCl), and maximum reduction peak potential of the ion was observed at -0.25V(vs.Ag/AgCl). Calibration graph at its potential was linear from 0.1 ppm to 80.O ppm. Slope factor and relative coefficient were 1.75 mA/ppm and 0.998, respectively. Reduction behaviour of Cr(VI) at PPy/Pt electrode was similar to PPy/GC electrode, Calibration graph was linear from l.0 ppm to 60.0 ppm. Slope factor and relative coefficient were 0.5mA/ppm and 0.923, respectively. But PPy/GC modified electrode had about 3 times higher sensitivity than PPy/Pt modified electrode. Reduction behaviour of Cu(II), As(IlI), Pb(II), and Cd(II) couldn't be seen at PPy/GC electrode,Its metals had not lnterfered with Cr (VI) determination.

• Geophysics and Geophysical Exploration
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• v.11 no.3
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• pp.230-241
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• 2008

Characteristics of transfer responses for arrays like triangle, hexagon and semicircle were investigated. To characterize the site near Izmit city with ambient noise measurement, dispersion curves of surface waves were derived with using array technique like F-K, High resolution F-K, MSPAC and H/V ratio was calculated. Also, MASW was surveyed to get the high frequency part of dispersion curves. The transition from fundamental mode to first high mode of surface waves for dispersion curve was observed. Dispersion curve of fundamental mode of ambient noise and first higher mode of MASW was used in inversion to get S-wave velocity structure of subsurface. None-unique problem of results of surface wave inversion was solved with comparison of result of refraction tomography performed with first arrivals of MASW data.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.20.1-20.1
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• 2009

반도체 소자 제조 공정 프로그램인 T-suprem4와 MEDICI를 이용하여 NMOS구조를 설계 하였다. MOS 소자 시뮬레이션을 통해 식각 공정에서 생기는 언더컷에 의한 전기적 특성을 I-V 곡선으로 비교하여 분석하였다. NMOS 구조는 반도체 소자 제조 공정 프로그램 T-suprem4를 이용하여 기본 소자 구조를 설계하였다. 실험의 변수로는 첫째, 소자 공정 중 폴리 실리콘의 언더컷 식각의 각도를 $70^{\circ}C$부터 $110^{\circ}C$까지 $10^{\circ}C$의 차이로 설계하였다. 또한, 언더컷에 의한 드레인-소스사이의 전류($I_{DS}$) 손실이 없는 유효한 각도를 확인하기 위해 $80^{\circ}C$부터 $100^{\circ}C$까지는 $2^{\circ}C$ 크기로 설계 하였다. 둘째, 게이트 크기를 축소하고 역시 언더컷 식각의 각도를 다양하게 설계하였다. 설계된 소자를 반도체 소자 특성 분석 프로그램 MEDICI를 이용하여 소자의 전기적 특성을 측정하였다. 우선 NMOS소자 게이트에 2V의 전압을 인가하였다. 그리고 드레인 부분에 전압을 인가하여 그에 따른 드레인의 전류를 측정 하였다. 드레인 전압은 0V 부터 변화시키며 인가하였다. 측정된 전류 값으로 I-V 곡선을 나타내었다. I-V 곡선의 분석을 통해 식각 후 언더컷의 각도가 $70^{\circ}C$, $80^{\circ}C$, $110^{\circ}C$ 일 때 $4\times10^{-8}A/{\mu}$의 전류가 흐르고, $90^{\circ}C$, $100^{\circ}C$ 일 때는 $1.8\times10^{-7}A/{\mu}$의 전류가 흐르는 것을 확인 하였다. $80^{\circ}C$에서 $100^{\circ}C$까지는 $2^{\circ}C$ 크기로 측정한 결과 $88^{\circ}C$에서 $100^{\circ}C$ 사이 일 때 $90^{\circ}C$ 각도의 경우와 같이 $1.8\times10^{-7}A/{\mu}$의 전류가 측정 되었다. 즉, 식각 중 수직 측벽 도에 언더컷이 $10^{\circ}C$이상 발생하면 $I_{DS}$ 전류 값이 약 22%로 감소하였다. 또한 일반적으로 $90^{\circ}C$의 수직측벽을 가지는 공정이 중요하다고만 생각 되었지만, 이번 연구를 통하여 식각 후 측벽의 각도가 $88^{\circ}C$에서 $92^{\circ}C$ 사이에 있을 때 $I_{DS}$ 값이 가장 최대가 되는 것을 확인 할 수 있었다.

• Analytical Science and Technology
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• v.18 no.5
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• pp.369-375
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• 2005

The differential pulse anode stripping voltammograms of some rare earth elements and their complexes with catechol have been investigated in various pH and electrolytes. In a 0.1 M LiCl and pH 5.3 solution, $Euv^{3+}$ and $Pr^{3+}$ showed a single oxidation peak at -0.2 V and the oxidation currents were linearly increased with the concentration of those ions. $Tm^{3+}$, $Tb^{3+}$, $Yb^{3+}$ and $Sm^{3+}$ showed two oxidation peaks at -0.5 V and -0.2 V and the oxidation currents at -0.5 V were increased with the concentration increase of those ions. The linear range of those calibration curves was in 1 ppm-10 ppm. In the case of voltammograms of catechol complexes of rare earth elements, $Tb^{3+}$-catechol and $Eu^{3+}$-catechol complex showed a single oxidation peak at -0.95 V and -0.65V, respectively and $Sm^{3+}$-catechol, $Pr^{3+}$-catechol, $Tm^{3+}$-catechol and $Yb^{3+}$-catechol complexes showed two oxidation peaks. The linear range of the calibration curves of those complex was 0.1 ppm~1.0 ppm.

• Journal of Advanced Marine Engineering and Technology
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• v.41 no.3
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• pp.230-237
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• 2017

In this study, electrochemical methods were used to determine the optimum protection potential of S355ML steel for the cathodic protection of offshore wind-turbine-tower substructures. The results of potentiodynamic polarization experiments indicated that the anodic polarization curve did not represent a passivation behavior, while under the cathodic polarization concentration, polarization was observed due to the reduction of dissolved oxygen, followed by activation polarization by hydrogen evolution as the potential shifted towards the active direction. The concentration polarization region was found to be located between approximately -0.72 V and -1.0 V, and this potential range is considered to be the potential range for cathodic protection using the impressed current cathodic protection method. The results of the potentiostatic experiments at various potentials revealed that varying current density tended to become stable with time. Surface characterization after the potentiostatic experiment for 1200 s, by using a scanning electron microscope and a 3D analysis microscope confirmed that corrosion damage occurred as a result of anodic dissolution under an anodic polarization potential range of 0 to -0.50 V, which corresponds to anodic polarization. Under potentials corresponding to cathodic polarization, however, a relatively intact surface was observed with the formation of calcareous deposits. As a result, the potential range between -0.8 V and -1.0 V, which corresponds to the concentration polarization region, was determined to be the optimum potential region for impressed current cathodic protection of S355ML steel.

• Journal of Bio-Environment Control
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• v.14 no.3
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• pp.182-189
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• 2005

This research was conducted to determine physical properties of four root media, peatmoss + vermiculite (1:1, v/v; PV), peatmoss + composted rice hall (1:1, PR), peatmoss + composted saw-dust (1:1 : PS) and peatmoss + composted pine bark (1:1 PB), as influenced by incorporation rate of Stock-sorb C (STSB). Each root medium containing STSB was packed in 22 cm diameter plastic pot and the physical properties were determined at 5 weeks after packing. As incorporation rate of STSB were elevated, total porosity increased in PV, PS and PB media with statistical differences at $5{\%}$ level. Those also resulted in increase of container capacity in PS and PB media, but statistical differences were not observed in PV and PR media. Elevated incorporation rate of STSB in PV, PS and PB media resulted in increase of air space with statistical differences. Trends in air space of the three root media showed a linear as well as quadratic responses to STSB contents of media. As incorporation rate of STSB increased, more water was retained in four root media at the soil moisture tension of 4.90 kPa, 9.81 kPa, 29.4 kPa and 1.5 MPa. The amount of water retained in PS medium was the highest at the moisture tension at 29.4 kPa and 1.5 MPa followed by PB, PR and PV medium. These results indicated that elevation of incorporation rate of STSB to various root media increased moisture retention capacity, but did not increase the available water holding capacity.

• Journal of the Korean Institute of Telematics and Electronics T
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• v.35T no.2
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• pp.6-12
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• 1998

Thin film SOI(Silicon-on-insulator) device offer unique advantages such as reduction in short channel effects, improvement of subthreshold slope, higher mobility, latch-up free nature, and so on. But these devices exhibit floating-body effet such as current kink which inhibits the proper device operation. In this paper, the SOI NMOSFET with a T-type gate structure is proposed to solve the above problem. To simulate the proposed device with TSUPREM-4, the part of gate oxide was considered to be 30nm thicker than the normal gate oxide. The I-V characteristics were simulated with 2D MEDICI. Since part of gate oxide has different oxide thickness, the gate electric field strength is not same throughout the gate and hence the impact ionization current is reduced. The current kink effect will be reduced as the impact ionization current drop. The reduction of current kink effect for the proposed device structure were shown using MEDICI by the simulation of impact ionization current, I-V characteristics, and hole current distribution.

• Applied Biological Chemistry
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• v.36 no.4
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• pp.310-314
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• 1993

High performance liquid chromatographic method using a TSK-gel amide 80 column and isocratic elution with acetonitrile-water (63 :35 ;v/v) mixture was used for the separation and the quantitation of fructo (GF2-GF7)- and inulo-oligosaccharides (F2-F4). Retention time of each standard carbohydrate was highly reproducible. Standardization curves obtained by plotting the peak areas against the amounts of each carbohydrate showed very high coefficient of determination$({\ge}0.9884)$ and similar slopes, and a wide range of y-intercepts. Our results suggest the use of each Pure oligosaccharide for its own standardization curve instead of using a certain carbohydrate as an internal standard.