• Journal of Industrial Technology
• /
• v.25 no.A
• /
• pp.157-162
• /
• 2005

In this study, the fabrication of PZT films was performed from a multilayer structure comprising $TiO_2$, $ZrO_2$ and PbO thin films prepared by rapid themal chemical vapor deposition(RTMOCVD). $TiO_2$, $ZrO_2$ and PbO are the component layers of oxide multilayer system for a single phase PZT thin film. The composition control of PZT thin film was done by the thickness control of individual component layer. The composition ratio of Pb:Ti:Zr with thickness were 1:0.94:0.55. Occurrence of a single-phase of PZT was initiated at around $550^{\circ}C$ and almost completed at $750^{\circ}C$ under the fixed time of 1hr. As the concentration of Pb increased, the roughness and crystallization in the film increased. From the as result of using XPS and TEM, the single phase formation through annealing is evident. The electrical properites of the prepared PZT thin film(Zr/Ti=40/60, 300 nm) on a Pt-coated substrate were as follow: dielectric constant ${\varepsilon}_r=475$, coercive field Ec=320 kV/cm, and remanant polarization $P_r=11{\mu}C/cm^2$ at an applied voltage of 18 V.

• Journal of Surface Science and Engineering
• /
• v.35 no.6
• /
• pp.383-390
• /
• 2002

To investigate behaviors of Ti and O elements and microstructures of anodic titanium oxide films, the films were prepared by anodizing pure titanium in $H_2$S $O_4$, $H_3$P $O_4$, and $H_2O$$_2$ mixed solution at 180V. The microstructures and chemical states of the elements were analyzed using SEM, X-ray mapping, AFM, XRD, XPS (depth profile). The films formed on a titanium substrate showed porous layers which were composed of pore and wall, And with increasing anodizing time a hexagonal shape of cell structures were dominant and solace roughness increased. From the XRD result the structure of the Ti $O_2$ layer was anatase type of crystal on the whole. In the XPS spectra it was found that Ti and O were chemically binded in forms of Ti $O_2$, TiOH, $Ti_2$ $O_3$ at Ti 2p, and Ti $O_2$, $Ti_2$ $O_3$, $P_2$ $O_{5}$, S $O_4^{2-}$ at O ls respectively. Concentration of Ti $O_2$ decreased as the depth increased from the surface of the oxide film towards the substrate, but to the contrary concentrations of TiOH and $Ti_2$ $O_3$ increased.d.

• Korean Journal of Materials Research
• /
• v.16 no.3
• /
• pp.178-182
• /
• 2006

A single electro-discharge-sintering (EDS) pulse (1.0 kJ/0.7 g), from a $300{\mu}F$ capacitor, was applied to atomized spherical Ti-6Al-4V powder in a low vacuum to produce porous-surfaced implant compacts. A solid core surrounded by a porous layer was formed by a discharge in the middle of the compact. XPS (X-ray photoelectron spectroscopy) was used to study the surface characteristics of the implant material. C, O, and Ti were the main constituents, with smaller amounts of Al, V, and N. The implant surface was lightly oxidized and was primarily in the form of $TiO_2$ with a small amount of metallic Ti. A lightly etched EDS implant sample showed the surface form of metallic Ti, indicating that EDS breaks down the oxide film of the as-received Ti-6Al-4V powder during the discharge process. The EDS Ti-6Al-4V implant surface also contained small amounts of aluminum oxide in addition to $TiO_2$. However, V detected in the EDS Ti-6Al-4V implant surface, did not contribute to the formation of the oxide film..

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.04c
• /
• pp.58-61
• /
• 2008

$TiO_2$ is a wide band-gap semiconductor (3.4 eV) and can only absorb about 5% of sun light in the ultraviolet light region, which largely limits its practical applications because of the lower utility of sun light and quantum yield. In order to move the absorption edge of $TiO_2$ fims to visible spectrum range, we have made the impurity level within a band-gap of $TiO_2$ thin film by introduction of oxygen vacancy. Oxygen-defected $TiO_2$ thin film have prepared by reactive sputtering with the partial pressure of $Ar:O_2=10:90{\sim}99.33:0.66$ ratio. As a result, we could have the impurity level of about 2.75 eV on condition that oxygen partial pressure is below 7%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.393-394
• /
• 2008

$TiO_2$ is a wide band-gap semiconductor (3.4 eV) and can only absorb about 5% of sun light in the ultraviolet light region, which largely limits its practical applications because of the lower utility of sun light and quantum yield. In order to move the absorption edge of $TiO_2$ films to visible spectrum range, we have made the impurity level within a band-gap of $TiO_2$ thin film by introduction of oxygen vacancy. Oxygen-defected $TiO_2$ thin film have prepared by reactive sputtering with the partial pressure of Ar:$O_2$=10:90~99.33:0.66 ratio. As a result, we could have the impurity level of about 2.75 eV on condition that oxygen partial pressure is below 7%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.398-399
• /
• 2006

$TiO_2$ is a wide band-gap semiconductor (3.4 eV) and can only absorb about 5% of sun light. in the ultraviolet light region, which largely limits its practical applications because of the lower utility of sun light and quantum yield. In order to move the absorption edge of $TiO_2$ films to visible spectrum range, we have made the impurity level within a band-gap of $TiO_2$ thin film by introduction of oxygen vacancy. Oxygen-defected $TiO_2$ thin film have prepared by reactive sputtering with the partial pressure of Ar:$O_2$=10:90~99.33:0.66 ratio. As a result, we could have the impurity level of about 2.75 eV on condition that oxygen partial pressure is below 7%.

• Journal of Korean Society of Environmental Engineers
• /
• v.22 no.4
• /
• pp.609-617
• /
• 2000

This study is aimed at investigating an effect of HCl gas on selective reduction of NOx over a CuHM and $V_2O_5-WO_3/TiO_2$ catalyst. SCR process is the most effective method to remove NOx, but catalyst can be deactivated by the acidic gas such as HCl gas which is also included in flue gas from the incinerator. In dry condition of flue gas, the CuHM catalyst treated by HCl gas has shown higher NO removal activity than the fresh catalyst. The activity of the catalyst can be restored by treating at $500^{\circ}C$. On the contrary. $V_2O_5-WO_3/TiO_2$ catalyst is obviously deactivated by HCl and the deactivation increases in proportion to the concentration of HCl gas. The deactivated catalyst is not restored to it's original activity by heat treatment for regeneration. In wet flue gas stream, the CuHM catalyst has shown lower activity than fresh catalyst and $V_2O_5-WO_3/TiO_2$ catalyst was severely deactivated by HCl treatment. The activity loss of catalysts are mainly due to the decrease of Br$\ddot{o}$nsted acid site on the catalyst surface by $NH_3$ TPD. The change of BET surface area of CuHM catalyst after the reaction isn't observed but $V_2O_5-WO_3/TiO_2$ catalyst is observed. The amount of $Cu^{{+}{+}}$ and $V_2O_5$ is decreased after the reaction. From these results, it is expected that CuHM catalyst should be better than $V_2O_5-WO_3/TiO_2$ catalyst for its application to the incineration of flue gas.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2016.11a
• /
• pp.119-119
• /
• 2016

Over the last years the anodic formation of ordered $TiO_2$ nanotube layers has created significant scientific interest. Titanium oxide nanotube formation on the titanium or titanium alloy surface is expected to be important to improve cell adhesion and proliferation under clinical conditions. It should be possible to control the nanotube size and morphology for biomedical implant use by controlling the applied voltage, alloying element, current density, anodization time, and electrolyte. $TiO_2$ nanotubes show excellent biocompatibility, and the open volume in the tubes may be exploited as a drug release platform and so on. Therefore, in this study, Nanotube shape on the Ti-29Nb-xHf alloys with applied potentials was reserched. $TiO_2$ nanotube formation on Ti-29Nb-xHf alloys was carried out using anodization technique as a function of applied DC potential (10 V to 30 V and 30 V to 10 V) and anodization time for 60~120 min in $1MH_3PO_4$ with small additions of (0.8 wt. %, to 1.2 wt. %) NaF. The morphology change of anodized Ti-29Nb-xHf alloys was determined by FE-SEM, XRD, and EDS.

• Journal of Magnetics
• /
• v.15 no.1
• /
• pp.25-28
• /
• 2010

This study examined the crystallographic and magnetic properties of vanadium-substituted lithium cobalt titanium ferrite, $Li_{0.7}Co_{0.2}Ti_{0.2}V_{0.2}Fe_{1.7}O_4$. Ferrite was synthesized using a conventional ceramic method. The samples annealed below $1040^{\circ}C$ showed X-ray diffraction peaks for spinel and other phases. However, the sample annealed above $1040^{\circ}C$ showed a single spinel phase. The lattice constant of the sample was $8.351\;{\AA}$, which was relatively unaffected by vanadium-substitution. The average grain size after vanadium-substitution was $13.90\;{\mu}m$, as determined by scanning electron microscopy. The M$\ddot{o}$ssbauer spectrum could be fitted to two Zeeman sextets, which is the typical spinel ferrite spectra of $Fe^{3+}$ with A and B sites, and one doublet. From the absorption area ratio of the M$\ddot{o}$ssbauer spectrum, the cation distribution was found to be ($Co_{0.2}V_{0.2}Fe_{0.6})[Li_{0.7}Ti_{0.2}Fe_{1.1}]O_4$. Vibrating sample magnetometry revealed a saturation magnetization and coercivity of 36.9 emu/g and 88.6 Oe, respectively, which were decreased by vanadium-substitution.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1993.05a
• /
• pp.129-133
• /
• 1993

$TiO_2-V_2O_5-Nb_2O_5$ humidity sensors have been fabricated in the ceramic type and their physical and hygroscopic characteristics have been investigated. The additives and sintering conditions affect the humidity sensitivity. XRD patterns, SEM photographs were used for the analysis of crystal structures and surface morphology. $TiO_2-V_2O_5-Nb_2O_5$ humidity sensors had good linearity in the range from 20%RH to 90%RH and the sensitivity of sensor sintered at $1,000^{\circ}C$ for 1hr was 73% at operating temperature $60^{\circ}C$.