• Bulletin of the Korean Chemical Society
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• 제32권10호
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• pp.3730-3734
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• 2011

The degree of self-assembly and the size variation of nanotubular structures in anodic titanium oxide prepared by the anodization of titanium in ethylene glycol containing 0.25 wt % $NH_4F$ at 40 V were investigated as a function of anodization time. We found that the degree of self-assembly and the size of the nanotubes were strongly dependent on thickness deviation and thus indirectly on anodization time, as the thickness deviation was caused by the dissolution of the topmost tubular structures at local areas during long anodization. A large deviation in thickness led to a large deviation in the size and number of nanotubes per unit area. The dissolution primarily occurred at the bottoms of the nanotubes ($D_{bottom}$) in the initial stage of anodization (up to 6 h), which led to the growth of nanotubes. Dissolution at the tops ($D_{top}$) was accompanied by $D_{bottom}$ after the formed structures contacted the electrolyte after 12 h, generating the thickness deviation. After extremely long anodization (here, 70 h), $D_{top}$ was the dominant mode due to increase in pH, meaning that there was insufficient driving force to overcome the size distribution of nanotubes at the bottom. Thus, the nanotube array became disorder in this regime.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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• pp.152-153
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• 2007

This paper describes a resonant driving piezoelectric micro cantilever practicable to ultrasound thrombolysis device for the treatment of ischemic stroke. The proposed piezoelectric cantilever was designed to be a unimorph structure of Si/$SiO_2$/Ti/Pt/PZT/Pt, and fabricated by top-down sequence etching process. The red blood cell (RBC) lysis experiment was carried out to confirm the usability of the proposed cantilever. Total 87.76 % of RBCs were ruptured using the ultrasound generated by up-down actuations of the fabricated cantilever with AC voltage having the frequency of 19.36 Hz and the magnitude of $30V_{p-p}$.

• International Journal of Precision Engineering and Manufacturing-Green Technology
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• 제5권5호
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• pp.643-650
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• 2018

A self-powered electrochromic device was fabricated on an indium tin oxide-polyethylene naphthalate flexible substrate using a dye-sensitized solar cell (DSSC) as a self-harvesting source; the electrochromic device was naturally bleached and operated under outdoor light conditions. The color of the organic electrochromic polymer, poly(3,4-ethylenedioxythiophene) polystyrene sulfonate, was shifted from pale blue to deep blue with an antimony tin oxide film as a charge-balanced material. Electrochromic performance was enhanced by secondary doping using dimethyl sulfoxide. As a result, the device showed stable switching behavior with a high transmittance change difference of 40% at its specific wavelength of 630 nm for 6 hrs. To improve the efficiency of the solar cell, 1.0 wt.% of Ag NWs in the photoanode was applied to the $TiO_2$ photoanode. It resulted in an efficiency of 3.3%, leading to an operating voltage of 0.7 V under xenon lamp conditions. As a result, we built a standalone self-harvesting electrochromic system with the performance of transmittance switching of 29% at 630 nm, by connecting with two solar cells in a device. Thus, a self-harvesting and flexible device was fabricated to operate automatically under the irradiated/dark conditions.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.107-107
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• 2000

최근 반도체 소자의 고집적화 및 대용량화의 경향에 다라 MOSFET 소자 제작에 이동되는 게이트 산화막의 두께가 수 nm 정도까지 점점 얇아지는 추세이고 Giga-DRAM급 차세대 UNSI소자를 제작하기 위해 5nm이하의 게이트 절연막이 요구된다. 이런 절연막의 두께감소는 게이트 정전용량을 증가시켜 트랜지스터의 속도를 빠르게 하며, 동시에 저전압동작을 가능하게 하기 때문에 게이트 산화막의 두께는 MOS공정세대가 진행되어감에 따라 계속 감소할 것이다. 따라서 절연막 두께는 소자의 동작 특성을 결정하는 중요한 요소이므로 이에 대한 정확한 평가 방법의 확보는 공정 control 측면에서 필수적이다. 그러나, 절연막의 두께가 작아지면서 게이트 산화막과 crystalline siliconrksm이 계면효과가 박막의 두께에 심각한 영향을 주기 때문에 정확한 두께 계측이 어렵고 계측방법에 따라서 두께 계측의 차이가 난다. 따라서 차세대 반도체 소자의 개발 및 양산 체계를 확립하기 위해서는 산화막의 두께가 10nm보다 작은 1nm-5nm 수준의 박막 시료에 대한 두께 계측 방법이 확립이 되어야 한다. 따라서, 본 연구에서는 습식 산화 공정으로 제작된 3nm-7nm 의 게이트 절연막을 현재까지 알려진 다양한 두께 평가방법을 비교 연구하였다. 절연막을 MEIS (Medim Energy Ion Scattering), 0.015nm의 고감도를 가지는 SE (Spectroscopic Ellipsometry), XPS, 고분해능 전자현미경 (TEM)을 이용하여 측정 비교하였다. 또한 polysilicon gate를 가지는 MOS capacitor를 제작하여 소자의 Capacitance-Voltage 및 Current-Voltage를 측정하여 절연막 두께를 계산하여 가장 좋은 두께 계측 방법을 찾고자 한다.다. 마이크로스트립 링 공진기는 링의 원주길이가 전자기파 파장길이의 정수배가 되면 공진이 일어나는 구조이다. Fused quartz를 기판으로 하여 증착압력을 변수로 하여 TiO2 박막을 증착하였다. 그리고 그 위에 은 (silver)을 사용하여 링 패턴을 형성하였다. 이와 같이 공진기를 제작하여 network analyzer (HP 8510C)로 마이크로파 대역에서의 공진특서을 측정하였다. 공진특성으로부터 전체 품질계수와 유효유전율, 그리고 TiO2 박막의 품질계수를 얻어내었다. 측정결과 rutile에서 anatase로 박막의 상이 변할수록 유전율은 감소하고 유전손실은 증가하는 결과를 나타내었다.의 성장률이 둔화됨을 볼 수 있다. 또한 Silane 가스량이 적어지는 영역에서는 가스량의 감소에 의해 성장속도가 둔화됨을 볼 수 있다. 또한 Silane 가스량이 적어지는 영역에서는 가스량의 감소에 의해 성장속도가 줄어들어 성장률이 Silane가스량에 의해 지배됨을 볼 수 있다. UV-VIS spectrophotometer에 의한 비정질 SiC 박막의 투과도와 파장과의 관계에 있어 유리를 기판으로 사용했으므로 유리의투과도를 감안했으며, 유리에 대한 상대적인 비율 관계로 투과도를 나타냈었다. 또한 비저질 SiC 박막의 흡수계수는 Ellipsometry에 의해 측정된 Δ과 Ψ값을 이용하여 시뮬레이션한 결과로 비정질 SiC 박막의 두께를 이용하여 구하였다. 또한 Tauc Plot을 통해 박막의 optical band gap을 2.6~3.7eV로 조절할 수 있었다. 20$0^{\circ}C$이상으로 증가시켜도 광투과율은 큰 변화를 나타내지 않았다.부터 전분-지질복합제의 형성 촉진이 시사되었다.이것으로 인하여 호화억제에 의한 노화 방지효과가 기대되었지만 실제로 빵의 노화는 현저히 진행되었다

• Bulletin of the Korean Chemical Society
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• 제34권4호
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• pp.1081-1088
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• 2013

Two new metal-free organic dyes bridged by anthracene-mediated ${\pi}$-conjugated moieties were successfully synthesized for use in a dye-sensitized solar cell (DSSC). A N,N-diphenylthiophen-2-amine unit in these dyes acts as an electron donor, while a (E)-2-cyano-3-(thiophen-2-yl)acrylic acid group acts as an electron acceptor and an anchoring group to the $TiO_2$ electrode. The photovoltaic properties of (E)-2-cyano-3-(5-((10-(5-(diphenylamino)thiophen-2-yl)anthracen-9-yl)ethynyl)thiophen-2-yl)acrylic acid (DPATAT) and (E)-2-cyano-3-(5'-((10-(5-(diphenylamino)thiophen-2-yl)anthracen-9-yl)ethynyl)-2,2'-bithiophen-5-yl)acrylic acid (DPATABT) were investigated to identify the effect of conjugation length between electron donor and acceptor on the DSSC performance. By introducing an anthracene moiety into the dye structure, together with a triple bond and thiophene moieties for fine-tuning of molecular configurations and for broadening the absorption spectra, the short-circuit photocurrent densities ($J_{sc}$), and open-circuit photovoltages ($V_{oc}$) of DSSCs were improved. The improvement of $J_{sc}$ in DSSC made of DPATABT might be attributed to much broader absorption spectrum and higher molecular extinction coefficient (${\varepsilon}$) in the visible wavelength range. The DPATABT-based DSSC showed the highest power conversion efficiency (PCE) of 3.34% (${\eta}_{max}$ = 3.70%) under AM 1.5 illumination ($100mWcm^{-2}$) in a photoactive area of $0.41cm^2$, with the $J_{sc}$ of $7.89mAcm^{-2}$, the $V_{oc}$ of 0.59 V, and the fill factor (FF) of 72%. In brief, the solar cell performance with DPATABT was found to be better than that of DPATAT-based DSSC.

• 자원환경지질
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• 제8권3호
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• pp.147-164
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• 1975

소백산(小白山) 변성대내(變成帶內)의 옥방(玉房), 선산(善山), 지례(知禮) 및 단성(丹城)일대에 분포하는 각섬석질암(角閃石質岩) 중 옥방지역(玉房地域)의 것은 주변 변성암류(變成岩類)에 상합적(相合的)이며 엽이(葉理)가 잘 발달되어 있고 그외 지역의 것은 심한 화강암화작용(花岡岩化作用)의 영향을 받아 편마암(片磨岩)및 화강암질암내(岡岩質岩內)에 lense 상(狀)의 잔류체(殘留體)로 산출(産出)된다. 본 연구에서는 주로 소백산(小白山) 변성대내(變成帶內)의 각섬석질암(角閃石質岩)옥방중석광상((玉房重石鑛床) 포함)과 그의 경계부에 위치한 옥천지향사대내(沃川地向斜帶內)의 상동광상(上東鑛床)의 염기성변성암(鹽基性變成岩)의 시료를 대상으로 습식(濕式) 및 방출분광분석(方出分光分析)을 수행하여, 24개 주성분(主成分) 및 희유원소(稀有元素)의 정성(定性) 정량적(定量的)인 값을 variation trend와 discriminant function analysis 를 통하여 비교검토함으로써 이들의 성인(成因)을 밝혀보려 하였다. 주성분원소(主成分元素)의 Niggli value를 사용한 각종 도면에서는 화강암화작용(花岡岩化作用)으로 인한 alkali, alumina, 및 silica 등의 증가로 인하여 충분한 data를 얻지못했으나, 연구(硏究) 대상 시료(試料)의 희유원소(稀有元素)들은 alkli, alumina, silica의 증감(增減)에 영향을 받지않아 (도면 12, 13) 성인규명(成因規明)에 만족한 결과를 얻을 수 있었다. 옥방(玉房), 선산(善山), 지례(知禮) 및 단성지역(丹城地域)의 각섬석질암(角閃石質岩)은 각 도표에서 높은 비율의 Cr, Ni, Co, Ti, Sr 및 V의 값을 가지며 염기성(鹽基性) 화성암(火成岩)의 variation trend를 잘 보여주고, 상동지역(上東地域)의 염기성변성암(鹽基性變成岩)은 낮은 Cr, Ni, Co, Ti, Sr 및 V의 값과 낮은 Niggli mg 값을 가져서 화성(火成), 퇴적(堆積)의 두 특징을 동시에 나타내고 있으나 화성기원의 특징을 더욱 강조하여 준다. 한편 Discriminant function test ($X_1$, $X_2$, $X_3$)에서도 옥방(玉房), 선산(善山), 지체(知體), 단성(丹城)지역의 각섬석질암(角閃石質岩)은 한 개의 시료(試料)를 제외하고는 모두 $X_1$, $X_2$, $X_3$ 중 둘이상이 positive값을 가져 화성기원(火成起源)을 지시해주며 상동광상(上東鑛床)의 것은 하나의 시료는 둘이상의 positive 값 ($X_1$=7.08, $X_2$=0.43, $X_3$=-4.42) 을 나타내고 두 개의 시료는 둘 이상의 negative 값($X_1$=7.66, -8.60, $X_2$=-0.78, -2.13, $X_3$=4.62, -1.00) 을 나타낸다. 또한 기원암(起源岩)의 규명에서 본 연구의 대상이 된 모든 염기성(鹽基性) 변성암(變成岩)이 분출암(憤出岩)및 퇴적암(堆積岩)의 특징인 높은 oxidation ratio (2 $Fe_2O_3{\times}100/2$ $Fe_2O_3+FeO$, in mols)를 가지는 것으로 보아 주성분(主成分) 및 희유원소(稀有元素) 연구(硏究)결과와 비교하여 보면 분출암(憤出岩)에서 유래된 것으로 결론 될 수 있으나 소백산변성암(小白山變成帶)의 경우는 oxidation ratio의 증가가 심한 화강암화작용(花岡岩化作用)의 영향 일수도 있으며 야외산출상태와 현미경기재에서도 분출암(憤出岩)의 잔류증거를 찾지못하였다. 결론적으로 소백산변성대내의 옥방(玉房), 선산(善山), 지체(知體), 단성(丹城)일대의 각섬석질암(角閃石質岩)은 염기성(鹽基性) 관입암(慣入岩)으로부터 유래된 것으로 사료되고, 옥천지향사대내(沃川地向斜帶內)의 상동광상(上東鑛床)일대의 염기성변성암(鹽基性變成岩)은 Kamp (1968)와 Orville (1969)가 취급한 연구 결과에서와 같이 탄산염퇴적물(炭酸鹽堆積物)의 퇴적환경에서 침천한 염기성(鹽基性) tuff로부터 유래된 가능성이 많다.

• 전기학회논문지
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• 제57권7호
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• pp.1213-1217
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• 2008

Poling is an important process in fabricating PZT ceramic devices such as filters and resonators and activates piezoelectricity to sintered PZT ceramics. Tolerance of the operating frequency of these devices is tightly required in applications. And a factor to attribute the tolerance is the temperature dependence of the resonance frequency of PZT ceramics. In this paper the relationship of poling strength and temperature dependence of resonance frequency of PZT specimens was studied. The $Pb(Zr_{0.53}Ti_{0.47})O_3$ ceramics were fabricated and the poling strengths were chosen to be 0.5, 1.5, 2.5 and 3.5 [kV/mm]. The dielectric constant of the specimen poled in poling strength 0.5 [kV/mm] was less than that of unpoled specimen and the specimen poled in higher electric field had the higher dielectric constant. (002) peak in X-ray diffraction patterns of the specimens increased as poling strength increased. And the change of resonance frequency of the specimens according to the variation of temperature was measured. Resonance frequency of all specimens increased as the temperature increased. The specimen poled in higher electric field had the smaller positive temperature coefficient of resonance frequency. The effect that temperature coefficient of resonance frequency becomes smaller is obtained when Zr mole in PZT composition equation increase. Controlling the poling strength is believed to be a method to adjust the temperature stability of resonance frequency of the PZT ceramic devices.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.151-151
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• 2012

A new plasma process, i.e., the combination of PIII&D and HIPIMS, was developed to implant non-gaseous ions into materials surface. HIPIMS is a special mode of operation of pulsed-DC magnetron sputtering, in which high pulsed DC power exceeding ~1 kW/$cm^2$ of its peak power density is applied to the magnetron sputtering target while the average power density remains manageable to the cooling capacity of the equipment by using a very small duty ratio of operation. Due to the high peak power density applied to the sputtering target, a large fraction of sputtered atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed plasma of sputtered target material by HIPIMS operation, the implantation of non-gaseous ions can be successfully accomplished. The new process has great advantage that thin film deposition and non-gaseous ion implantation along with in-situ film modification can be achieved in a single plasma chamber. Even broader application areas of PIII&D technology are believed to be envisaged by this newly developed process. In one application of non-gaseous plasma immersion ion implantation, Ge ions were implanted into SiO2 thin film at 60 keV to form Ge quantum dots embedded in SiO2 dielectric material. The crystalline Ge quantum dots were shown to be 5~10 nm in size and well dispersed in SiO2 matrix. In another application, Ag ions were implanted into SS-304 substrate to endow the anti-microbial property of the surface. Yet another bio-application was Mg ion implantation into Ti to improve its osteointegration property for bone implants. Catalyst is another promising application field of nongaseous plasma immersion ion implantation because ion implantation results in atomically dispersed catalytic agents with high surface to volume ratio. Pt ions were implanted into the surface of Al2O3 catalytic supporter and its H2 generation property was measured for DME reforming catalyst. In this talk, a newly developed, non-gaseous plasma immersion ion implantation technique and its applications would be shown and discussed.

• 한국재료학회지
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• 제29권4호
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• pp.205-210
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• 2019

$Pb(Zr,Ti)O_3$ (PZT) is used for the various piezoelectric devices owing to its high piezoelectric properties. However, lead (Pb), which is contained in PZT, causes various environment contaminations. $(K,Na)NbO_3$ (NKN) is the most well-known candidate for a lead-free composition to replace PZT. A single crystal has excellent piezoelectric-properties and its properties can be changed by changing the orientation direction. It is hard to fabricate a NKN single crystal due to the sodium and potassium. Thus, $(Na,K)NbO_3-Ba(Cu,Nb)O_3$ (NKN-BCuN) is chosen to fabricate the single crystal with relative ease. NKN-BCuN pellets consist of two parts, yellow single crystals and gray poly-crystals that contain copper. The area that has a large amount of copper particles may melt at low temperature but not the other areas. The liquid phase may be responsible for the abnormal grain growth in NKN-BCuN ceramics. The dielectric constant and tan ${\delta}$ are measured to be 684 and 0.036 at 1 kHz in NKN-BCuN, respectively. The coercive field and remnant polarization are 14 kV/cm and $20{\mu}C/cm^2$.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2014년도 추계학술대회 논문집
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• pp.273-273
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• 2014

Quantum-dot sensitized solar cells (QDSCs) are an emerging class of solar cells owing to their easy fabrication, low cost and material diversity. Despite of the fact that the maximum conversion efficiency of QDSCs is still far less than that of Dye-Sensitized Solar Cells (>12 %), their unique characteristics like Multiple Exciton Generation (MEG), energy band tune-ability and tendency to incorporate multiple co-sensitizers concurrently has made QDs a suitable alternative to expensive dyes for solar cell application. Lead Sulfide (PbS) Quantum dot sensitized solar cells are theoretically proficient enough to have a photo-current density ($J_{sc}$) of $36mA/cm^2$, but practically there are very few reports on photocurrent enhancement in PbS QDSCs. Recently, $Hg^{2+}$ incorporated PbS quantumdots and Cadmium Sulfide (CdS) co-sensitized PbS solarcells are reported to show an improvement in photo-current density ($J_{sc}$). In this study, we explored the efficacy of $In_2S_3$ as an interfacial layer deposited through SILAR process for PbS QDSCs. $In_2S_3$ was chosen as the interfacial layer in order to avoid the usage of hazardous CdS or Mercury (Hg). Herein, the deposition of $In_2S_3$ interfacial layer on $TiO_2$ prior to PbS QDs exhibited a direct enhancement in the photo-current (Isc). Improved photo-absorption as well as interfacial recombination barrier caused by $In_2S_3$ deposition increased the photo-current density ($J_{sc}$) from $13mA/cm^2$ to $15.5mA/cm^2$ for single cycle of $In_2S_3$ deposition. Increase in the number of cycles of $In_2S_3$ deposition was found to deteriorate the photocurrent, however it increased $V_{oc}$ of the device which reached to an optimum value of 2.25% Photo-conversion Efficiency (PCE) for 2 cycles of $In_2S_3$ deposition. Effect of Heat Treatment, Normalized Current Stability, Open Circuit Voltage Decay and Dark IV Characteristics were further measured to reveal the characteristics of device.