• The Korean Journal of Physiology and Pharmacology
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• v.1 no.6
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• pp.741-748
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• 1997

In the present study, we have investigated the effect of metabolic inhibition on the inward rectifier K current ($I_{K1}$). Using whole cell patch clamp technique we applied voltage ramp from +80 mV to -140 mV at a holding potential of -30 mV and recorded the whole cell current in single ventricular myocytes isolated from the rabbit heart. The current-voltage relationship showed N-shape (a large inward current and little outward current with a negative slope) which is a characteristic of $I_{K1}$. Application of 0.2 mM dinitrophenol (DNP, an uncoupler of oxidative phosphorylation as a tool for chemical hypoxia) to the bathing solution with the pipette solution containing 5 mM ATP, produced a gradual increase of outward current followed by a gradual decrease of inward current with little change in the reversal potential (-80 mV). The increase of outward current was reversed by glibenclamide ($10\;{\mu}M$), suggesting that it is caused by the activation of $K_{ATP}$. When DNP and glibenclamide were applied at the same time or glibenclamide was pretreated, DNP produced same degree of reduction in the magnitude of the inward current. These results show that metabolic inhibition induces not only the increase of $K_{ATP}$ channel but also the decrease of $I_{K1}$. Perfusing the cell with ATP-free pipette solution induced the changes very similar to those observed using DNP. Long exposure of DNP (30 min) or ATP-free pipette solution produced a marked decrease of both inward and outward current with a significant change in the reversal potential. Above results suggest that the decrease of $I_{K1}$ may contribute to the depolarisation of membrane potential during metabolic inhibition.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.13 no.3
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• pp.73-81
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• 1999

Measurements of ultrasonic signals caused by partial discharges were perlonnrl by using an ultrasonic measurement technique to diagnose the electrical treeing deterioration in an epoxy mold-type power transformer. We also examined the characteristics of tree growth, partial discharge magnitude and ultrasonic pulse number with the increase of the deterioration time. From these results, it was found that the shape of the tree was a branch-type, and the rates of the tree growth were examined when ac voltages of 16[kV] and 20[kV] were applied Ultrasonic pulse number and discharge magnitude were rapidly increased as the length of the tree grows after the middle stage of the deterioration time, and it appeared that ultrasonic pulse number was proportional to discharge magnitude. Attenuation, time-delaying and directivity characteristics of ultrasonic signals propagated into epoxy resin by using ultrasonic oscillation and receiving systems are also re[prted as a basic data of ultrasonic mesasurements in mold-type power transformer.former.

• Journal of Radiation Protection and Research
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• v.18 no.1
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• pp.25-35
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• 1993

To develop a technique of theoretical alpha track density calculation for comparison with measured track density, an electrostatic ion spectrometer was specially designed and fabricated. The mobility spectrum of first radon daughter(Po-218) in the range of $0.07{\sim}5.0cm^2/V\;s$ from the radon chamber was measured using-the electrostatic ion spectrometer. Measurement was taken in a radon chamber operated using dry particle free air passed through silica gel, activated charcoal and molecular sieve filters. The mobility of a new-born Po-218 ion measured by the electrostatic ion spectrometer was determined to be $1.92cm^2/V\;s$. A comparison of the theoretical and measured alpha track densities was completed and uncertainties concerning the shape of the spectrum were analyzed. It was found that the discrepancies in track densities are primarily Que to the neglect of wall loss of ions in the theoretical track density calculation.

• Korean Chemical Engineering Research
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• v.53 no.6
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• pp.831-835
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• 2015

This study evaluated the influence of the zeta potential of silica-alumina on the behavior in terms of purity, yield, and precipitate shape and size of fractional precipitation in the fractional precipitation process for the purification of (+)-dihydromyricetin. The optimal silica-alumina amount (surface area per working volume of reacting solution) for zeta potential control was $100mm^{-1}$. As the zeta potential value of silica-alumina increased, (+)-dihydromyricetin yield and precipitate size were increased. The use of silica with the highest value of the zeta potential (+4.99 mV) as a zeta potential-controlling material increased the (+)-dihydromyricetin yield by 2-fold compared with that of the use of alumina with the lowest value of the zeta potential (-19.00 mV). In addition, the (+)-dihydromyricetin yield and precipitate size was inversely correlated with the absolute value of the zeta potential. On the other hand, the purity of (+)-dihydromyricetin had almost no effect on changes in the zeta potential of silica-alumina.

• Korean Journal of Materials Research
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• v.27 no.11
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• pp.624-630
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• 2017

In this study, we investigated the overpotential of precipitation related to the catalytic activity of electrodes on the initial process of electrodeposition of Co and Co-Ni alloys on polycrystalline Cu substrates. In the case of Co electrodeposition, the surface morphology and the magnetic property change depending on the film thickness, and the relationship with the electrode potential fluctuation was shown. Initially, the deposition potential(-170 mV) of the Cu electrode as a substrate was shown, the electrode potential($E_{dep}$) at the $T_{on}$ of electrodeposition and the deposition potential(-600 mV) of the surface of the electrodeposited Co film after $T_{off}$ and when the pulse current was completed were shown. No significant change in the electrode potential value was observed when the pulse current was energized. However, in a range of number of pulses up to 5, there was a small fluctuation in the values of $E_{dep}$ and $E_{imm}$. In addition, in the Co-Ni alloy electrodeposition, the deposition potential(-280 mV) of the Cu electrode as the substrate exhibited the deposition potential(-615 mV) of the electrodeposited Co-Ni alloy after pulsed current application, the $E_{dep}$ of electrodeposition at the $T_{on}$ of each pulse and the $E_{imm}$ at the $T_{off}$ varied greatly each time the pulse current was applied. From 20 % to less than 90 % of the Co content of the thin film was continuously changed, and the value was constant at a pulse number of 100 or more. In any case, it was found that the shape of the substrate had a great influence.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.2
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• pp.93-101
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• 2002

We have proposed and fabricated two lateral type field emission diodes, poly-Si emitter by utilizing the local oxidation of silicon (LOCOS) and GaN emitter using metal organic chemical vapor deposition (MOCVD) process. The fabricated poly-Si diode exhibited excellent electrical characteristics such as a very low turn-on voltage of 2 V and a high emission current of $300{\;}\bu\textrm{A}/tip$ at the anode-to-cathode voltage of 25 V. These superior field emission characteristics was speculated as a result of strong surface modification inducing a quasi-negative electron affinity and the increase of emitting sites due to local sharp protrusions by an appropriate activation treatment. In respect, two kinds of procedures were proposed for the fabrication of the lateral type GaN emitter: a selective etching method with electron cyclotron resonance-reactive ion etching (ECR-RIE) or a simple selective growth by utilizing $Si_3N_4$ film as a masking layer. The fabricated device using the ECR-RIE exhibited electrical characteristics such as a turn-on voltage of 35 V for $7\bu\textrm{m}$ gap and an emission current of~580 nA/l0tips at anode-to-cathode voltage of 100 V. These new field emission characteristics of GaN tips are believed to be due to a low electron affinity as well as the shorter inter-electrode distance. Compared to lateral type GaN field emission diode using ECR-RIE, re-grown GaN emitters shows sharper shape tips and shorter inter-electrode distance.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.21 no.12
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• pp.3277-3285
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• 1996

In this paper, w designed an opical power distribution device for application to an optical switching and an optical subscriber loop. We fabricated PSG thin film by LPCVD. Based on the measured index of fabricted thin film, rib-type waveguide was transformed to two-dimension by the effective index method and we simulated dispersion property to find asingle-mode condition. We found that the optimum design parameters of rib-type waveguide are:cladding layer of 3.mu.m, core layer of 3.mu.m, buffer layer of 10.mu.m, and core width of 4.mu.m. Each side of the guiding region was etched down to 4.mu.m to shape the core. We used these optimum parameters of the rib-type waveguide with branching angle of 0.5.deg. and simulted the Y-branch waveguide by the BPM simulation. Numerical loss in branching area was claculated to be 0.1581dB and equal to the total loss of the Y-branch. The loss of the fabricated Y-branch waveguide on PSG film ws 1.6dB at .lambda.=1.3.mu.m before annealing but was 1.2dB after annealing at 1000.deg. C for 10 minutes. Consequently, the loss of branching area from 3000.mu.m to 6000.mu.m in the z-direction was 0.8dB, and single-mode propagation was confirmed by measuring the near field pattern. For coupling the fabricated Y-branch waveguide with an optical fiber, we fabricated V-groove which was used as the upholder of optical fiber. An etching angle was 54.deg. and the width and depth of guiding groove was 150.mu.m, 70.mu.m, respectively. The optical fiber is inserted onto V-groove. Both the Y-branch and V-groove were connected through the index matching oil. Coupling loss after connecting Y-branch and the optical fiber on V-groove was 0.34dB and that after injecting index mateching oil was 0.14dB.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.281-281
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• 2014

The field emission properties of GaN are reported in the present study. To be a good field emitter, it requires a low work function, high aspect ratio, and strong mechanical stability. In the case of GaN, it has a quite low work function (4.1eV) and strong chemical/mechanical/thermal stabilities. However, so far, it was difficult to fabricate vertical GaN nanostructures with a high aspect ratio. In this study, we successfully achieved vertically well aligned GaN nanostructures with chemical vapor-phase etching methods [1] (Fig. 1). In this method, we chemically etched the GaN film using hydrogen chloride and ammonia gases at high temperature around $900^{\circ}C$. This process effectively forms vertical nanostructures without patterning procedure. This favorable shape of GaN nanostructures for electron emitting results in excellent field emission properties such as a low turn-on field and long term stability. In addition, we observed a uniform fluorescence image from a phosphor film attached at the anode part. The turn-on field for the GaN nanostructures is found to be about $0.8V/{\mu}m$ at current density of $20{\mu}A$/cm^2. This value is even lower than that of typical carbon nanotubes ($1V/{\mu}m$). Moreover, threshold field is $1.8V/{\mu}m$ at current density of $1mA$/cm^2. The GaN nanostructures achieved a high current density within a small applied field range. We believe that our chemically etched vertical nanostructures are the promising structures for various field emitting devices.

• Journal of the Korean Electrochemical Society
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• v.14 no.3
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• pp.145-151
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• 2011

ZnSe, as a II-VI compound semiconductor which has a wide band gap in the visible region is applicable to the various fields such as laser diode, display and solar cell. By using the electrochemical deposition method, ZnSe thin film was synthesized on the ITO glass substrate. The synthesis of ZnSe grains and their structure having zinc blende shape were verified through the analysis of XRD and SEM. UV spectrophotometric method determined the band gap as the value of 2.76 eV. Applying the DFT (Density Functional Theory) in the molecular dynamics, the band structure of ZnSe grains was analyzed. For ZnSe grains with zinc blende structure, the band structure and its density of state were simulated using LDA (Local Density Approximation), PBE (Perdew Burke Ernzerhof), and B3LYP (Becke, 3-parameter, Lee-Yang-Parr) functionals. Among the calculations of energy band gap upon each functional, the simulated one of 2.65 eV based on the B3LYP functional was mostly near by the experimental measurement.

• Archives of Plastic Surgery
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• v.39 no.3
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• pp.190-197
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• 2012

Background : This article presents long-term outcomes after correcting secondary bilateral cleft lip nasal deformities using a refined reverse-U incision and V-Y plasty or in combination with a composite graft in order to elongate the short columella. Methods : A total of forty-six patients underwent surgery between September 1996 and December 2008. The age of the patients ranged from 3 to 19 years of age. A bilateral reverse-U incision and V-Y plasty were used in 24 patients. A composite graft from the helical root was combined with a bilateral reverse-U incision in the 22 patients who possessed a severely shortened columella. The follow-up period ranged between 2 and 10 years. Results : A total of 32 patients out of 46 were evaluated postoperatively. The average columella length was significantly improved from an average of 3.7 mm preoperatively to 8.5 mm postoperatively. The average ratio of the columella height to the alar base width was 0.18 preoperatively and 0.29 postoperatively. The postoperative basal and lateral views revealed a better shape of the nostrils and columella. The elongated columella, combined with a composite graft, presented good maintenance of the corrected position with no growth disturbance. A composite graft showed color mismatching in several patients. Twenty-six patients demonstrated no alar-columella web deformity and satisfactory symmetry of the nostrils. Four patients experienced a drooping and overhanging of the corrected alar-columella web. Conclusions : A bilateral reverse-U incision with V-Y plasty or in combination with a composite graft was effective in correcting secondary bilateral cleft lip nasal deformity.