• Title/Summary/Keyword: V shape

Search Result 1,232, Processing Time 0.029 seconds

Development of Meander-shaped Metallic Magnetic Calorimeters

  • Yoon, W.S.;Jang, Y.S.;Kim, G.B.;Lee, H.J.;Lee, J.Y.;Lee, M.K.;Kim, Y.H.
    • Progress in Superconductivity
    • /
    • v.14 no.2
    • /
    • pp.102-105
    • /
    • 2012
  • We are developing meander-shaped metallic magnetic calorimeters using micro-fabrication methods. A planar Nb coil in a meander shape was fabricated on a Si substrate. The coil was designed to have a persistent current using a metal heater evaporated on a part of the coil. A paramagnetic sensor, $5{\mu}m$ thick Au:Er foil, was glued on top of the meander structure with epoxy. The magnetization and heat capacity were measured at different temperatures, and applied field currents matched well with expected values. The detector showed an energy resolution of 4 keV FWHM for the 5.5 MeV alpha particles.

Reinforcing Characteristics on Volume and Shape of Ductile Short-Fiber in Brittle Matrix Composites (취성기지 복합재료에서 연성 단섬유의 함유량 및 형상에 관한 보강특성)

  • Sin, Ik-Jae;Lee, Dong-Ju
    • Transactions of the Korean Society of Mechanical Engineers A
    • /
    • v.24 no.1 s.173
    • /
    • pp.250-258
    • /
    • 2000
  • The reinforcing effects of ductile short-fiber reinforced brittle matrix composites are studied by, measuring flexural strength, fracture toughness and impact energy as functions of fiber volume fraction and length. The parameters of fracture mechanics, K and J are applied to assess fracture toughness and bridging stress. It is found that fracture toughness is greatly, influenced by the bridging stress ill which fiber pull-out is occur. For the reinforcing effects as functions of fiber volume fraction($V_f$ = 1, 2, 3 %) and length(L = 3, 6. 10cm), the flexural strength is maximum at $V_f$ = 1% and both fracture toughness.

Mandibular Angle Management for Improving the Esthetic Result of Orthognathic Surgery (임상가를 위한 특집 3 - 악교정 수술과 함께하는 mandibular angle management)

  • Han, Se-Jin
    • The Journal of the Korean dental association
    • /
    • v.50 no.11
    • /
    • pp.677-681
    • /
    • 2012
  • Orthognathic surgery(2-jaw or 1-jaw surgery) is very famous one of cosmetic techniques. However, primary purpose of orthognathic surgery is to improve the occlusion of jaw and secondary purpose is to improve the esthetic result. Unfortunately, many patients don't only confuse often primary and secondary purpose of orthognathic surgery but they think the esthetic result is more important than the occlusion. Therefore, oral and maxillofacial surgeon has to fully understand cosmetic needs of patient and reflect that in the treatment plan. Patients with prominent mandibular angle want to have the narrower face of so called 'V-line' shape. Various techniques like the angle shaving, ostectomy of the lateral cortex around the mandibular angle and masseter musclectomy can be used for improving the mandibular angle hypertrophy. These techniques also can be applied in orthognathic surgery at the same time. We operated patients of orthognathic surgery, especially, with wide lower face and post-operative results were satisfactory in all cases. So, we propose mandibular angle management for improving the esthetic result of orthognathic surgery.

Crystal growth of yttrium vanadate by the EFG technique

  • Kochurikhin, V.V.;Ivanov, M.A.;Suh, S.J.;Yoon, D.H.
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.11 no.5
    • /
    • pp.203-206
    • /
    • 2001
  • The applicability of shaped growth of yttrium orthovanadate was approved by successful growth of rod-like single crystals with the rectangular shape. Nd-doped single crystals with content of $Nd^{3+}$ ions of 1,2,3,5 atomic % in the starting melt were grown by the EFG technique with the size up to $10^{*}10mm$ in section and up to 85 mm in length. For the testing of the multiple growth of the orthovanadates, two and three Nd-and Yb-doped $YVO_{4}$ single crystals were grown by the EFG technique simultaneously up to 110 mm in length.

  • PDF

Growth of GaN Thin-Film from Spin Coated GaOOH Precursor (GaOOH 선구체의 스핀코팅에 의한 GaN 박막의 성장)

  • Lee, Jae-Bum;Kim, Seon-Tai
    • Korean Journal of Materials Research
    • /
    • v.17 no.1
    • /
    • pp.1-5
    • /
    • 2007
  • GaN thin fan were grown by spin coated colloidal GaOOH precursor. Polycrystalline GaNs with crystalline size of $10{\sim}100nm$ were grown on $SiO_2$ substrate. The shape of crystallite above $900^{\circ}C$ had the hexagonal plate and column type. X-ray diffraction patterns for them correspond to those of the hexagonal wurtzite GaN. With increasing droplets. i.e, thickness of deposited layers, XRD intensity increased. PL (photoluminescence) spectrum consisted with an weak near band-edge emission at 3.45 eV and a broad donor-acceptor emission band at 3.32 eV. From the low temperature PL measurement on GaN grown at $800^{\circ}C$ that the shallow donor-acceptor recombination induced emission was more intense than the near band-edge excitonic emission.

The 3D Finite Element Analysis of PMLSM according to Skew shape of Permanent Magnet (영구 자석의 Skew 형태에 따른 선형 동기기의 특성에 관한 3D 유한 요소 해석)

  • Hwang, In-Cheol;Lee, Dong-Yeup;Kim, Gyu-Tak
    • Proceedings of the KIEE Conference
    • /
    • 2006.10d
    • /
    • pp.80-82
    • /
    • 2006
  • 본 논문에서는 영구자석의 스큐형상에 따른 영구자석형 선형 동기기(PMLSM: Permanent Magnet Linear Synchronous Motor)의 제반 특성을 해석하였다. 단방향 Skew의 경우 스큐 방향과 직각 방향으로 작용하는 Lateral Force가 존재한다. 이러한 Lateral Force는 가동자와 LM 가이드 사이에 마찰력으로 작용하여 PMLSM의 제반 특성을 저하시킨다. Lateral Force의 저감을 위하여 영구자석을 V형상으로 모델링하여 단방향 착자 시의 특성과 비교하였다. V-skew 모델의 lateral force가 단방항 skew 모델의 lateral force의 11.3[%]로 감소하는 양호한 결과를 얻었다.

  • PDF

Development of 60KV Pulsed Power Supply using IGBT Stacks (IGBT 직렬구동에 의한 60KV 펄스 전원장치 개발)

  • Ryoo, Hong-Je;Kim, Jong-Soo;Rim, Geun-Hie;Goussev, G.I.;Sytykh, D.
    • The Transactions of The Korean Institute of Electrical Engineers
    • /
    • v.56 no.1
    • /
    • pp.88-99
    • /
    • 2007
  • In this paper, a novel new pulse power generator based on IGBT stacks is proposed for pulse power application. Because it can generate up to 60kV pulse output voltage without any step- up transformer or pulse forming network, it has advantages of fast rising time, easiness of pulse width variation and rectangular pulse shape. Proposed scheme consists of series connected 9 power stages to generate maximum 60kV output pulse and one series resonant power inverter to charge DC capacitor voltage. Each power stages are configured as 8 series connected power cells and each power cell generates up to 850VDC pulse. Finally pulse output voltage is applied using total 72 series connected IGBTs. To reduce component for gate power supply, a simple and robust gate drive circuit is proposed. For gating signal synchronization, full bridge invertor and pulse transformer generates on-off signals of IGBT gating with gate power simultaneously and it has very good characteristics of short circuit protection.

The study on the electrical and optical characteristics of a new structure for color AC plasma display (AC-PDP의 새로운 셀구조와 그 전기 광학적 특성에 관한 연구)

  • Park, Jae-Moon;Kim, Young-Kee;Lee, Jae-Young;Shin, Joong-Hong;Cho, Jung-Soo;Park, Chung-Hoo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2000.05b
    • /
    • pp.128-130
    • /
    • 2000
  • A new type ac plasma display panels(PDPs) cells are designed and tested electrically and optically. One cells have the structure of sin discharge path shape and small electrode area. The other cells have the non-symmetric structure with a same electrode area. They show a higher luminous efficienccy and a lower power consumption about 30% improvement than the conventional standard ac PDP cells.

  • PDF

Performance and Design of Cable Termination for 154kV Class (154kV 케이블 콘넥터의 설계와 특성 평가 연구)

  • Cho, Han-Goo;Kim, Kyang-Young;Lee, Cheol-Ho;Lee, Yong-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2010.06a
    • /
    • pp.112-112
    • /
    • 2010
  • The purpose of development is to localize a connector for connection of cable and GIS for underground transmission system. The cable connector for GIS provides electrical insulation of GIS housing part and makes connection of ultra high voltage electrical apparatus and power cable by controlling electrical stress between electrodes of power cable termination. Generally Korean switchgear makers are using a connector for GIS made by foreign companies. We manufactured sample by best structure design of great capacity conductor connecting part and then modified the design by analysis of shape and section. We completed the suitable sample for current cycling test condition of conductor connecting part sample and ensured surge characteristics of line by short-time current test.

  • PDF

Nucleation Process of Indium on a Copper Electrode

  • Chung, Yonghwa;Lee, Chi-Woo
    • Journal of Electrochemical Science and Technology
    • /
    • v.4 no.3
    • /
    • pp.93-101
    • /
    • 2013
  • The electrodeposition of indium onto a copper electrode from an aqueous sulfate solution containing $In^{3+}$ was studied by means of cyclic voltammetry and chronoamperometry. Reduction and oxidation of indium on copper were investigated by using cyclic voltammograms at different negative limiting potentials and at different scan rates in cumulative cycles. Cyclic voltammograms indicated that reduction and oxidation processes of indium could involve various reactions. Chronoamperometry was carried out to analyze the nucleation mechanism of indium in the early stage of indium electrodeposition. The non-dimensional plot of the current transients at different potentials showed that the shape of the plot depended on the applied potential. The nucleation of indium at potential step of -0.6~-0.8 V was close to progressive nucleation limited by diffusion. However the non-dimensional plot of current transients for the indium nucleation showed different behaviors from theoretical curves at the potential step lower than -0.8 V.