• 제목/요약/키워드: V shape

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20~30대 남성의 셔츠 착용실태 및 선호도 연구 (Wearing Condition & Preference of Shirts for Males in Their Twenties and Thirties)

  • 성혜윤;이경화
    • 패션비즈니스
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    • 제20권5호
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    • pp.60-75
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    • 2016
  • This research was conducted to understand the different circumstances for wearing shirts by adult males aged 20-39, and to provide this basic information to the shirt industry prior to developing new functional men's shirts. A total of 345 respondents participated in the survey. Most of questionnaire, frequency, mean and standard deviation were calculated and the differences between the 20s and 30s were analyzed by t-test or ${\chi}^2$ test. The results of the survey are as follows. Grading the satisfaction degree of their body parts, the respondents were relatively unsatisfied with their height, weight, and waist, abdominal and hip circumferences. Majority preferred department stores, discount stores and outlets for purchasing shirts. Many have never owned tailored shirts - men in 20's had less experience with tailoring than men in 30's. The foremost selection criterion for purchasing shirts was fit -during purchase, men in their 20's considered fit more important than men in their 30's. The most preferred unbuttoning of the top button when wearing shirts. For favored collar shapes with one button unbuttoned, the most valued collar angle and style was V-neck shape when unbuttoned, low collar band, collar with unopened collar, and stiff collars. Most shirt designs and details included slim fit, no dart in the front and one dart on the back. Men in 20's more preferred the no dart in the front and one tuck on the back, as compared to men in 30's. On the other hand, men in their 30's preferred one dart shirts than men in 20's. Regarding shirt bands and cuffs, one button and regular collar and one button cuffs with round angle design, were the most preferred, respectively.

TiN/NiTi 2층형 박막의 두께 변화에 따른 물리적 특성 기초연구

  • 변인섭;양지훈;김성환;정재인
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2018년도 춘계학술대회 논문집
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    • pp.132-132
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    • 2018
  • NiTi 형상 기억 합금은 형상기억 효과 (Shape memory effect) 또는 초탄성 효과 (superelasticity effect)를 나타낸다고 알려져 있다. 대표적으로 Ni:Ti 조성비가 1:1을 갖는 NiTi(니티놀) 합금은 형상기억 및 초탄성 효과가 우수하여 기계 가공 공정뿐만 아니라 우수한 내마모성을 요구하는 공구에 사용하기 적합하다. 하지만 NiTi 박막은 합금과 같은 Damping capacity를 가지고 있지만 비교적 낮은 물리적 특성을 가지고 있다. 본 연구에서는 NiTi 박막의 낮은 물리적 특성을 향상시키기 위하여 TiN과 NiTi의 2층형 박막을 제조하고 각 층의 두께 변화를 조절하여 특성 향상에 대한 기초연구를 진행했다. 타겟은 NiTi (Ni:Ti=48.2:51.8 at.%) 합금 타겟과 Ti 타겟을 사용하였고, 시편과 타겟 간의 거리는 약 10cm 이며, 시편은 기초분석을 위한 SUS304, 물리적 특성 평가를 위한 초경 을 사용하였다. 초경은 실제 공구에서 사용하고 있는 Co함량이 10% 함유된 시편은 선정했다. 시편 전처리는 알코올과 아세톤으로 세척을 실시한 후 진공챔버에 장착하고 ${\sim}10^{-5}Torr$ 까지 진공배기를 실시하였다. 기판 정청은 글로우 방전 방식으로 약 800 V 전압에서 30분간 실시했다. 공정 가스는 Ar와 $N_2$ 혼합가스를 사용하였으며, UBM(Un-Balanced Magnetron) 스퍼터링 소스를 이용하여 2층형 박막을 제조했다. TiN과 NiTi 층의 두께 비율을 0.5, 1 그리고 2 로 변화시켜 코팅했으며, 박막의 총 두께는 약 ${\sim}3{\mu}m$ 이다. 기초분석은 FE-SEM을 통해 두께와 박막 비율을 확인 및 XRD 분석을 통해 박막 정성분성을 실시했다. 2층형 박막의 물리적 특성은 Nanoindentation test, AFM 및 ball on disc를 이용하여 평가했으며, 그 결과 두께 비율 변화에 따라 물리적 특성 변화가 나타남을 확인했다.

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산화막두께 및 도핑분포에 대한 DGMOSFET의 문턱전압이하 스윙분석 (Analysis of Subthreshold Swing for Oxide Thickness and Doping Distribution in DGMOSFET)

  • 정학기
    • 한국정보통신학회논문지
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    • 제15권10호
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    • pp.2217-2222
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    • 2011
  • 본 연구에서는 이중게이트(Double Gate; DG)MOSFET의 채널내 전위와 전하분포의 관계를 가우스 함수를 이용한 포아송방정식으로부터 유도하고자 한다. 즉, 도핑분포는 가우스 함수를 이용하였으며 변수인 이온주입범위 및 분포편차에 대하여 문턱전압이하 스윙과 산화막 두께의 관계를 관찰하고자 한다. 포아송방정식으로부터 해석학적 전위분포 모델을 구하였으며 이를 이용하여 산화막 두께에 대한 문턱전압이하 스윙값의 변화를 구하였다. 문턱전압이하 스윙은 게이트전압에 대한 드레인전류의 변화를 나타내고 이론적으론 최소값 60 mV/dec을 나타내며 디지털소자응용에 매우 중요한 요소이다. 본 연구의 모델이 타당하다는 것을 입증하기 위하여 포텐셜 분포값을 수치해석학적 값과 비교하였다. 결과적으로 본 연구에서 제시한 포텐셜모델이 수치해석학적 시뮬레이션모델과 매우 잘 일치하였으며 도핑분포에 따라 문턱전압이하 스윙과 산화막두께의 관계를 분석하였다.

스트레스 감도 향상을 위한 턴 온 직후의 조름 효과를 이용한 얇은 질화막 폴리실리콘 전계 효과 트랜지스터 압력센서 (A Polysilicon Field Effect Transistor Pressure Sensor of Thin Nitride Membrane Choking Effect of Right After Turn-on for Stress Sensitivity Improvement)

  • 정한영;이정훈
    • 센서학회지
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    • 제23권2호
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    • pp.114-121
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    • 2014
  • We report a polysilicon active area membrane field effect transistor (PSAFET) pressure sensor for low stress deflection of membrane. The PSAFET was produced in conventional FET semiconductor fabrication and backside wet etching. The PSAFET located at the front side measured pressure change using 300 nm thin-nitride membrane when a membrane was slightly strained by the small deflection of membrane shape from backside with any physical force. The PSAFET showed high sensitivity around threshold voltage, because threshold voltage variation was composed of fractional function form in sensitivity equation of current variation. When gate voltage was biased close to threshold voltage, a fractional function form had infinite value at $V_{tn}$, which increased the current variation of sensitivity. Threshold voltage effect was dominant right after the PSAFET was turned on. Narrow transistor channel established by small current flow was choked because electron could barely cross drain-source electrodes. When gate voltage was far from threshold voltage, threshold voltage effect converged to zero in fractional form of threshold voltage variations and drain current change was mostly determined by mobility changes. As the PSAFET fabrication was compatible with a polysilicon FET in CMOS fabrication, it could be adapted in low pressure sensor and bio molecular sensor.

Nimonic 80A의 PIII에 미치는 질소이온주입량의 영향 (The Effects of the Incident Nitrogen Ion Dose on the Plasma Immersion Ion Implantation of Nimonic 80A)

  • 유용주;천희곤;김대일;차병철;구경완
    • 열처리공학회지
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    • 제18권6호
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    • pp.369-374
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    • 2005
  • Nitrogen ion implantation in Nimonic 80A using plasma immersion ion implantation (PIII) was investigated at a pulse voltage of -60 kV and ion dose of $3{\times}10^{17}{\sharp}/cm^2$, $6{\times}10^{17}{\sharp}/cm^2$, $12{\times}10^{17}{\sharp}/cm^2$. PIII is an effective technology to improve the surface hardness and wear resistance of materials. And also this technology is not limited by the shape and size of materials. PIII would be a promising technique in the future. Surface hardness and wear resistance of the $N^+$ ion implanted Nimonic 80A were increased with the increase in the incident ion dose. The surface hardness of the untreated Nimonic 80A is 420 Hv, the hardness of implanted Nimonic 80A is 1050 Hv at $N^+$ ion dose of $12{\times}10^{17}{\sharp}/cm^2$. The wear loss of the untreated is 82.5 mg, the wear loss of the implanted is 0.004g at $N^+$ ion dose of $12{\times}10^{17}{\sharp}/cm^2$. The $Cr_2N$ is detected on the surface of the implanted Nimonic 80A by XRD analysis.

펄스형 Nd:YAG 레이저의 교번 충.방전 방식에 의한 고반복 동작특성 (The high repetition operating characteristics of pulsed Nd:YAG laser by alternating charge-discharge system)

  • 김휘영;박구렬;김병균;홍정환;강욱;김희제
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 하계학술대회 논문집 E
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    • pp.2204-2206
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    • 1999
  • Pulsed Nd:YAC laser is used widely for materials processing and instrumentation. It is very important to control the laser energy density in materials processing by a pulsed Nd:YAG laser. A pulse repetition rate and a pulse width are regarded as the most dominant factors to control the energy density of laser beam. In this study, the alternating charge-discharge system was designed to adjust a pulse repetition rate. This system is controlled by one chip microprocessor and allows to replace an expensive condenser for high frequency to a cheap condenser for low frequency. In addition. we have investigated the current pulse shape of flashlamp and the operating characteristics of a pulsed Nd:YAG laser. As a result, it is found that the laser output of the power supply using the alternating charge-discharge system is not less than that of typical power supply. As the pulse repetition rate rises from 30pps to 120pps by the step of 30pps at 1200V, it is found that the laser efficiency decreases but the laser output power increases about 6W at each step.

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DESIGN OPTIMIZATION OF RADIATION SHIELDING STRUCTURE FOR LEAD SLOWING-DOWN SPECTROMETER SYSTEM

  • KIM, JEONG DONG;AHN, SANGJOON;LEE, YONG DEOK;PARK, CHANG JE
    • Nuclear Engineering and Technology
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    • 제47권3호
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    • pp.380-387
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    • 2015
  • A lead slowing-down spectrometer (LSDS) system is a promising nondestructive assay technique that enables a quantitative measurement of the isotopic contents of major fissile isotopes in spent nuclear fuel and its pyroprocessing counterparts, such as $^{235}U$, $^{239}Pu$, $^{241}Pu$, and, potentially, minor actinides. The LSDS system currently under development at the Korea Atomic Energy Research Institute (Daejeon, Korea) is planned to utilize a high-flux ($>10^{12}n/cm^2{\cdot}s$) neutron source comprised of a high-energy (30 MeV)/high-current (~2 A) electron beam and a heavy metal target, which results in a very intense and complex radiation field for the facility, thus demanding structural shielding to guarantee the safety. Optimization of the structural shielding design was conducted using MCNPX for neutron dose rate evaluation of several representative hypothetical designs. In order to satisfy the construction cost and neutron attenuation capability of the facility, while simultaneously achieving the aimed dose rate limit (< $0.06{\mu}Sv/h$), a few shielding materials [high-density polyethylene (HDPE)eBorax, $B_4C$, and $Li_2CO_3$] were considered for the main neutron absorber layer, which is encapsulated within the double-sided concrete wall. The MCNP simulation indicated that HDPE-Borax is the most efficient among the aforementioned candidate materials, and the combined thickness of the shielding layers should exceed 100 cm to satisfy the dose limit on the outside surface of the shielding wall of the facility when limiting the thickness of the HDPE-Borax intermediate layer to below 5 cm. However, the shielding wall must include the instrumentation and installation holes for the LSDS system. The radiation leakage through the holes was substantially mitigated by adopting a zigzag-shape with concrete covers on both sides. The suggested optimized design of the shielding structure satisfies the dose rate limit and can be used for the construction of a facility in the near future.

White Electroluminescent Device by ZnS: Mn, Cu, Cl Phosphors

  • 김종수;박재홍;이성훈;김광철;권애경;박홍이
    • 반도체디스플레이기술학회지
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    • 제5권3호
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    • pp.1-4
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    • 2006
  • White-light-emitting ZnS:Mn, Cu, Cl phosphors with spherical shape and the size of $20\;{\mu}m$ are successfully synthesized. They have the double phases of cubic and hexagonal structures. They are applied to electroluminescent (EL) devices by silk screen method with the following structure: $electrode/BaTiO_3$ insulator layer ($50{\sim}60\;{\mu}m$)/ ZnS:Mn, Cu, Cl phosphor layer ($30{\sim}50\;{\mu}m$)/ITO glass. The EL devices are driven with the voltage of 100 V and the frequency of 400 Hz. The EL devices show the three emission peaks. The blue and green emission bands are originated from $CICu^{2+}$ transition and $ClCu^+$ transition, respectively. The yellow emission band results from $^4T^6A$ transition of $Mn^{2+}$ ion. As an increase of Cu concentrations, the blue and green emission intensities decrease whereas the yellow emission intensity increases; the quality becomes warm white. It is due to the energy transfer from the blue and green bands to the yellow band.

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잔대 종자 펠렛처리가 종자 발아에 미치는 영향 (Effect of Pelleting Treatment on Seed Germination in Adenophora triphylla)

  • 임동현;남주희;김종혁;이민주;노일래
    • 한국약용작물학회지
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    • 제28권2호
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    • pp.128-135
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    • 2020
  • Background: Sowing seeds of Adenophora triphylla is known to be difficult owing to their small size and irregular seed shape. Therefore, this study was conducted to develop a seed pelleting technique to save labor during sowing. Methods and Results: To identify the optimal germination temperature for A. triphylla seeds, the temperature range was set from 17℃ to 32℃. Germination surveys were conducted in plastic greenhouse conditions in March, April, and May to determine the appropriate sowing time. The optimal germination temperature for A. triphylla seeds was 29℃ and May was the optimal sowing time in plastic greenhouse conditions. Covering materials for seed pelleting used talc (T), kaolin (K), calcium carbonate (C), and vermiculite (V). The pellet binder used agar (A), pectin, xanthan gum, polyvinyl alcohol (PVA), and sodium alginate (S). The best suited treatment mixture were the best suited in kaolin / calcium carbonate / vermiculite (KCV), talc / calcium carbonate / vermiculite (TCV) mixture treatment for covering material, and sodium alginate (S), agar (A) as pellet binder, respectively. The germination rate was the best in TCV mixed with S. Conclusion: The mixture of TCV (2 : 1 : 3) + 1.5% S (TCVS), was found to be the best pelleting materials for A. triphylla seeds, and seed pelleting can be labor-saving during sowing.

Effect of Complexing/Buffering Agents on Morphological Properties of CuInSe2 Layers Prepared by Single-Bath Electrodeposition

  • Lee, Hana;Lee, Wonjoo;Seo, Kyungwon;Lee, Doh-Kwon;Kim, Honggon
    • Current Photovoltaic Research
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    • 제1권1호
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    • pp.44-51
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    • 2013
  • For preparing a device-quality $CuInSe_2$ (CISe) light-absorbing layer by single-bath electrodeposition for a superstrate-type CISe cell, morphological properties of the CISe layers were investigated by varying concentrations of sulfamic acid and potassium biphthalate, complexing/buffering agents. CISe films were grown on an $In_2Se_3$ film by applying a constant voltage of -0.5V versus Ag/AgCl for 90 min in a solution with precursors of $CuCl_2$, $InCl_3$, and $SeO_2$, and a KCl electrolyte. A dense and smooth layer of CISe could be obtained with a solution containing both sulfamic acid and potassium biphthalate in a narrow concentration range of combination. A CISe layer prepared on the $In_2Se_3$ film with proper concentrations of complexing/buffering agents exhibited thickness of $1.6{\sim}1.8{\mu}m$ with few undesirable secondary phases. On the other hand, when the bath solution did not contain either sulfamic acid or potassium biphthalate, a CISe film appeared to contain undesirable flake-shape $Cu_{2-x}Se$ phases or sparse pores in the upper part of film.