• Title/Summary/Keyword: V Band

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Cyclovoltametric Methods for the Ionization Potential and Electron Affinity of Iridium ppy Derivatives

  • Shin, Dong-Myung;Sohn, Byoung-Chung
    • Journal of the Korean Applied Science and Technology
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    • v.20 no.2
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    • pp.125-129
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    • 2003
  • The effects of molecular structure on the redox properties of the organic electroluminescent materials (Ir$(ppy)_3$ Ir$(m-ppy)_3$ Ir$(p-toly)_3$) were studied using cyclic voltammetry and spectroscopy. These iridium complexes show reversible oxidation and reduction on the electrode, which produce the symmetric cyclic voltammogram. It indicates that these materials are very stable under repetitive oxidation/reduction cycles. The electrochemically determined ionization potentia/electron affinity values are 5.4OeV/3.02eV for Ir$(ppy)_3$, 5.36eV/2.96eV for Ir$(m-ppy)_3$, and 5.35eV/2.97eV for Ir$(p-toly)_3$ from the SCE(Standard Calomel Electrode). The electrically determined band gaps are 2.38eV (521nm), Ir$(ppy)_3$, 2.4OeV (517nm), Ir$(m-ppy)_3$, and 2.38eV (521nm). Ir$(p-toly)_3$, which are similar with the optical band gaps. The position of methyl group on 2-phenylpyridine (ppy) effects do not influence much on the ionization potential, electron affinity, and band gap of Ir$(ppy)_3$ derivatives.

Development of Nested PCR Primer Set for the Specific and Highly Sensitive Detection of Human Parvovirus B19

  • Cho, Kyu-Bong
    • Biomedical Science Letters
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    • v.24 no.4
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    • pp.390-397
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    • 2018
  • For the specific detection of human Parvovirus B19 (HuPaV-B19), we designed ten specific PCR primers from 3,800~4,500 nucleotides of HuPaV-B19 complete genome (NC_000883.2). Seventeen candidate PCR primer sets for specific detecting HuPaV-B19 were constructed. In specific reaction of HuPaV-B19, seventeen PCR primer sets showed specific band, however five PCR primer sets were selected basis of band intensity, amplicon size and location. In non-specific reaction with seven reference viruses, four PCR primer sets showed non-specific band, however one PCR primer set is not. Detection sensitivity of final selective PCR primer set was $100fg/{\mu}L$ for 112 minute, and PCR amplicon is 539 base pairs (bp). In addition, nested PCR primer set was developed, for detection HuPaV-B19 from a low concentration of contaminated samples. Selection of nested PCR primer set was basis of sensitivity and groundwater sample tests. Detection sensitivity of final selective PCR and nested PCR primer sets for the detection of HuPaV-B19 were $100fg/{\mu}L$ and $100ag/{\mu}L$ basis of HuPaV-B19 plasmid, it was able to rapid and highly sensitive detection of HuPaV-B19 than previous reports. We expect developed PCR primer set in this study will used for detection of HuPaV-B19 in various samples.

MMIC Low Noise Amplifier Design for Millimeter-wave Application (밀리미터파 응용을 위한 MMIC 저잡음 증폭기 설계)

  • 장병준;염인복;이성팔
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.12 no.7
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    • pp.1191-1198
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    • 2001
  • MMIC low noise amplifiers for millimeter-wave application using 0.15 $\mu$m pHEMT have been presented in this paper. The design emphasis is on active device model and EM simulation. The deficiency of conventional device models is identified. A distributed device model has been adapted to circumvent the scaling problems and, thus, to predict small signal and noise parameters accurately. Two single-ended low noise amplifier are designed using distributed active device model for Q-band(40 ∼ 44 GHz) and V-band(58 ∼65 GHz) application. The Q-band amplifier achieved a average noise figure of 2.2 dB with 18.3 dB average gain. The V-band amplifier achieved a average noise figure of 2.9 dB with 14.7 dB average gain. The design technique and model employed provides good agreement between measured and predicted results. Compared with the published data, this work also represents state-of-the-art performance in terms of gain and noise figure.

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A study on CIGS thin film characteristic with composition ratio change (조성비 변화에 의한 CIGS박막 특성에 관한 연구)

  • Chu, Soon-Nam;Park, Jung-Cheul
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.16 no.10
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    • pp.2247-2252
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    • 2012
  • In this paper, we produced CIGS thin film by co-evaporation method. During the process, substrate temperature and Ga/(In+Ga) composition ratio was altered to observe the change of resistivity and absorbance spectra measurements. As substrate temperature increased, resistivity decreased and as Ga/(In+Ga) composition ratio increased from 0.30 to 0.72, band gap also increased with the range of 1.26eV, 1.30eV, 1.43eV, 1.47eV. With the constant condition of composition ratio, resistivity decreased with increased thickness of the thin film. On this experiment, we assumed that optical absorbance ratio and optical current will be increased with CIGS thin film fabrication.

Binding energy study from photocurrent signal in $CdIn_2Te_4$ crystal

  • Hong, Kwang-Joon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.376-376
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    • 2010
  • The single crystals of p-$CdIn_2Te_4$ were grown by the Bridgman method without the seed crystal. From photocurrent measurements, it was found that three peaks, A, B, and C, correspond to the intrinsic transition from the valence band states of $\Gamma_7$(A), $\Gamma_6$(B), and $\Gamma_7$(C) to the conduction band state of $\Gamma_6$, respectively. The crystal field splitting and the spin orbit splitting were found to be 0.2360 and 0.1119 eV, respectively, from the photocurrent spectroscopy. The temperature dependence of the $CdIn_2Te_4$ band gap energy was given by the equation of $E_g(T)=E_g(0)-(9.43{\times}10^{-3})T^2/(2676+T)$. $E_g$(0) was estimated to be 1.4750, 1.7110, and 1.8229 eV at the valence band states of A, B, and C, respectively. The band gap energy of p-$CdIn_2Te_4$ at room temperature was determined to be 1.2023 eV.

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A design of V-shape RE Equalizer using dielectric resonator (유전체 공진기를 이용한 대역 평탄도 개선용 V-shape RF Equalizer의 설계)

  • 신재완;정중성;황희용;김윤조;류재수;정승환;윤상원
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
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    • 2002.11a
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    • pp.132-135
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    • 2002
  • A RF amplitude equalizer is designed to improve in-band flatness of Rf filters and/or systems using two dielectric resonators and a 90$^{\circ}$ hybrid. The equalizer has good return loss characteristics and V shaped S$_{21}$ response in passband which is suitable to compensate the ripple degradation due to insufficient quality factors of used resonators or narrow band width of filters or systems. After being connected to the equalizer, a 5-pole BPF at 1957MHz, which has 10 MHz bandwidth and 6㏈ ripple, shows only 1.8㏈ in-band ripple and good in- and out- band matched responses within used hybrid bandwidth without additional matching networks.

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Optical properties of the $A1_{0.15}$$Ga_{0.85}$N/GaN thin film ($A1_{0.15}$$Ga_{0.85}$N/GaN 박막의 광학적 특성)

  • 정상조;차옥환;서은경;김영실;신현길;조금재;남승재
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.9 no.6
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    • pp.553-557
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    • 1999
  • In order to investigate the optical properties of the $Al_XGa_{1-X}N/GaN$ thin film grown by metalorganic chemical vapor deposition (MOCVD) method, the photoluminescene (PL), photocurrent (PC) and persistent photoconductivity (PPC) measurements were carried out at room temperature. The band gap of the $A1_x$$Ga_{1-x}$N/GaN was determined to 3.70 eV by the PL and PC measurements. The PC measurement on the light illumination from the top of the $A1_x$$Ga_{1-x}$N/GaN thin film provides peaks at 3.70, 3.43, and around 2.2 eV. The PC spectrum by the illumination passing through from the substrate of the sample can be shown at 3.43 eV together with a broad tail band from the GaN band edge to around 2.23 eV. The photocurrent quenching and anomalous PPC decay observed in PPC measurements indicate that metastable electron states are fomed in the band gap of GaN layer to trap electrons which can be tunneled the potential barrier for long recovery time.

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Experimental fabrication of tapped band pass filter of $BiNbO_{4}$ ceramics ($BiNbO_4$ 세라믹스를 이용한 태핑기법의 적층칩 대역 필터에 관한 연구)

  • 고상기;지기만;김경용
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.23 no.4
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    • pp.988-996
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    • 1998
  • BN ceramics with 0.07wt% $V_{2}O_{5}$ and 0.03wt% CuO(BNC3V7) sintered at $900^{\circ}C$ where it is possible for these to be co-fired with Ag electrode. Dielectricconstant of 44.3, TCF of 22 ppm$/^{\circ}C$ and $Qxf_{o}$ value of 22,000 GHz can be obtained from BNC3V7, multilayer type band pass filters using tapped method and conventional method were designed for PCS (Personal Communication System) applications. Tapped method by adopting input/output-tapping scheme the chip filter stucture becomes simpler and needs fewer layers than that using the conventional input/output-coupling scheme. A multilayer type band pass filter fabricated by screen-printing with silver electrode after tape casting. The simulated characteristics of the fabricated filters sintered at $900^{\circ}C$ were compared with the designed ones. Even though the centered frequencies of tapped and conventional band pass chaip filters were measured to shift about 90MHz downward, the band pass characteristics of both filters were similar that of designed ones. The spuriousresonance characteristic of tapped pass chip filter was better than that of conventional chip filer.

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Synthesis and Band Gap Analysis of Meso-Arylporphyrins Containing Exclusively Electron Donating or Withdrawing Groups

  • Min Su Kang;Kwang-Jin Hwang
    • Journal of the Korean Chemical Society
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    • v.67 no.3
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    • pp.175-180
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    • 2023
  • Tetra-aryl substituted A4-type porphyrins (TP, TD, TA) and trans-A2B2 porphyrins (DDP1, AAP1) with electron-donating or withdrawing groups were synthesized. The band gap energy of those porphyrins was calculated from their UV-Vis spectra and CV data. With an electron-withdrawing group, the band gap energy of porphyrin TA increased via the LUMO energy up. Meanwhile, the introduction of an electron-donating group decreased the band gap of porphyrin by HOMO level up as as in the case of porphyrin TD. The band gap (2.19-2.28 eV) of metalloporphyrin PP-Ni was greater than those (1.81-2.06 eV) of non-metalloporphyrins PP due to the LUMO level up.

Development of the Multi Band Transceiver for Multi-Channel SAR (다채널 영상레이다를 위한 다중대역 송수신기 개발)

  • Kim, Jae-Min;Lim, Jae-Hwan;Park, Ji-Woong;Jin, Hyeong-Seok;Lee, Hyeon-Cheol
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.28 no.2
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    • pp.97-104
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    • 2017
  • In this paper, we designed and fabricated the multi band Transceiver Assembly(TCA) for the Multi Channel Synthetic Aperture Radar(MCSAR) containing C-band, X-band, Ku-band and we researched to verify electrical performance of TCA. The transceiver consists of transmitters, receivers, signal selection modules for each band, and stability oscillator, frequency synthesizer, controller, power distributor. The transceiver has a receive path selection and bandwidth selection functions in accordance with the operating mode. And the transceiver can transmit and receive all three bands simultaneously, each band has a bandwidth of up to 300 MHz. Final transmission output of transceiver for each band is over 20 dBm to be suitable for driving the T/R module. Receiver bandwidth is selected according to the required function and receiver gain has approximately C-band 52 dB, X-band 50 dB, Ku-band 60 dB, the maximum noise figure of Ku-band V polarization is 4.28 dB in the whole band H, V polarization. As a result of the electrical performance test, a multi-band TCA is satisfied the property requirements of the MCSAR.