• Korean Journal of Materials Research
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• v.14 no.4
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• pp.235-238
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• 2004

The LT-MBE (low temperature molecular beam epitaxy) allows to dope GaAs with Mn over its solubility limit. A 75 urn thick GaMnAs layers are grown on a low temperature grown LT-GaAs buffer layer at a substrate temperature of $260^{\circ}C$ by varying Mn contents ranged from 0.03 to 0.05. The typical growth rate for GaMnAs layer is fixed at 0.97 $\mu\textrm{m}$/h and the V/III ratio is varied from 25 to 34. The electrical and magnetic properties are investigated by Hall effect and superconducting quantum interference device(SQUID) measurements, respectively. Double crystal X-ray diffraction(DCXRD) is also performed to investigate the crystallinity of GaMnAs layers. The $T_{c}$ of the $Ga_{l-x}$ /$Mn_{x}$ As films grown by LT-MBE are enhanced from 38 K to 65 K as x increases from 0.03 into 0.05 whereas the $T_{c}$ becomes lower to 45 K when the V/III ratio increases up to 34 at the same composition of x=0.05. This means that the ferromagnetic exchange coupling between Mn-ion and a hole is affected by the growth condition of the enhanced V/III ratio in which the excess-As and As-antisite defects may be easily incorporated into GaMnAs layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.263-266
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• 2001

In this paper, we investigated dielectric properies for BST thin films that was deposited on MgO/Si substrates using RF magnetron sputtering. In here, MgO film was used to perform that a diffusion b arrier between the BST film and Si substrate and a buffer layer to assist the BST film growth. A d eposition condition for MgO films was RF Power of 50W, substrate temperature of room temperature and the working gas ratio of Ar:O$_2$ were varied from 90:10 to 60:47. Finally we manufactured the cap acitor of Al/BST/MgO/Si/Al structure to know electrical properties of this capacitor through I-V, C-V measurement. In the results, C-V aha racteristic curves was shown a ferroelectric property so we measured P-E. A remanent poliazation and coerceive electric field was present 2$\mu$C/cm$^2$ and -27kV/cm respectively at Ar:O$_2$=90:10. And a va clue of dielectric constant was 86 at Ar:02=90:10.

• International Journal of Highway Engineering
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• v.12 no.4
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• pp.17-28
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• 2010

A climbing lane is installed to separate low-speed traffic from high-speed traffic if drastic traffic capacity reduction is expected due to a large number of vehicles that slow down in the upward section. Existing studies on climbing lanes have focused on the designation, location of starting and ending points, and installation method of climbing lane with regard to road design standards. However, in terms of traffic operation, it was known that the climbing lanes cause traffic congestion due to the increase of traffic volumes. In this regard, this study aims to establish traffic operational guidance as to how much effects temporary closure of climbing lanes can have on traffic improvement according to the volume-capacity ratio, grade, and composition of trucks. A test section of simulated climbing lane was selected in Nakdong JC bound for Masan(136.9K~133.3K, 3.6km, 3.7%) on Jungbunaeryuk expressway to conduct VISSIM analyses, microscopic traffic simulation based on such control variables as traffic volume(v/c), grade and the trucks ratio. As a result of the analyses, it has been found that v/c and the ratio of trucks are the key variables for efficient traffic management of climbing lanes in order to relieve traffic congestion via climbing lane. If ratio of trucks are more than 50% and when v/c would be 0.8, both climbing lane would be closed and non-operated regardless of grade and ratio of trucks when v/c is 1.0. With the increased traffic due to a five-day work week system, continued peak hours during the weekday, increased and various patterns of congestion on expressway, this study would be expected to contribute to facilitating researches on flexible operational standards for road facilities.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.30 no.3
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• pp.442-450
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• 1997

The chemical properties of water masses were investigated at 33 stations of the southeastern last Sea in February, 1995 on board R/V Tam-Yang. The water masses were not clearly distinguished due to the vortical mixing in winter. However, on the basis of the T-S and $T-O_2$ diagrams, water masses in the study area were divided into five groups (Type I, Type II, Type III, Type IV, Type V). (1) $>9.0^{\circ}C,\;>34.35\;psu,\;5.08\~5.60m\ell/\ell$ at Type I, (2) $6.0\~9.0^{\circ}C,\;34.15\~34.35\;psu,\;5.60\~5.90\;m\ell/\ell$ at Type II, (3) $4.0\~6.0^{\circ}C,\;34.00\~34.15\;psu,\;>5.90m\ell/\ell$ at Type III, (4) $1.5\~4.0^{\circ}C,\;34.00\~34.05\;psu,\;5.40\~5.90\;m\ell/\ell$ at Type IV, (5) $<1.5^{\circ}C,\;34.05\~34.07\;psu,\;4.80\~5.40\;m\ell/\ell$ at Type V. In the vertical profiles of nutrients, the concentrations were very low in the surface layer and increased rapidly with depth. The highest concentrations occurred in Type IV, while the concentrations in Type I were the lowest. The N/P ratios were less than Redfield ratio, indicating that nitrogenous nutrients were the limiting factor tor phytoplankton growth. The concentrations of POC and PON were in the range of $0.49\~20.03\;{\mu}g-at/\ell\;and\;0.09\~5.34\;{\mu}g-at/\ell$, respectively. The relatively high concentration occured in the surface layer of inner shore, showing that the concentration at each water mass followed the order Type I > Type II > Type III > Type IV > Type V, respectively. The C:N ratio in particulate organic matter was lower than the values reported in other region due to relatively high concentrations of PON in the study area. Relatively high ratios of POC to chlorophyll $\alpha$ during the study periods indicate that non-living detritus comparised most of the POC in the study area.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.6 s.348
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• pp.9-17
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• 2006

We proposed a new High-speed CMOS Level Up/Down Shifter circuits that can be used with Dynamic Voltage and Frequency Scaling(DVFS) algorithm, for low power system in the SoC(System-on-Chip). This circuit used to interface between the other voltage levels in each CMOS circuit boundary, or between multiple core voltage levels in a system bus. Proposed circuit have advantage that decrease speed attenuation and duty ratio distortion problems for interface. The level up/down shifter of the proposed circuit designed that operated from multi core voltages$(0.6\sim1.6V)$ to used voltage level for each IP at the 500MHz input frequency The proposed circuit supports level up shifting from the input voltage levels, that are standard I/O voltages 1.8V, 2.5V, 3.3V, to multiple core voltage levels in between of $0.6V\sim1.6V$, that are used internally in the system. And level down shifter reverse operated at 1Ghz input frequency for same condition. Simulations results are shown to verify the proposed function by Hspice simulation, with $0.6V\sim1.6V$ CMOS Process, $0.13{\mu}m$ IBM CMOS Process and $0.65{\mu}m$ CMOS model parameters. Moreover, it is researched delay time, power dissipation and duty ration distortion of the output voltage witch is proportional to the operating frequency for the proposed circuit.

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.242-247
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• 1998

Hydrogenated amorphous carbon nitride[a-C:H(N)] films were deposited on p-type Si(100) at room temperature with bias voltage of 200 V by DC saddle-field plasma-enhanced chemical vapor deposition. Effects of the ratio of $N_2$ to $CH_4$($N_2/CH_4$), in the range of 0 and 4 on such properties as optical properties, microstucture, relative fraction of nitrogen and carbon, etc. of the films have been investigated. The thickness of the a-C:H(N) film was abruptly decreased with the addition of nitrogen, but at $N_2/CH_4$>0.5, the thickness of the film gradually decreased with the increase of the $N_2/CH_4$. The ratio of N to C(N/C) of the films was saturated at 0.25 with the increase of $N_2CH_4$. N-H, C≡N bonds of the films increased but C-H bond decreased with the increase of $N_2CH_4$.Optical band gap energy of the film decreased from 2.53 eV at the ratio of $N_2CH_4$=4.

• Journal of the Korean Chemical Society
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• v.17 no.3
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• pp.169-173
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• 1973

The tridentate schiff base ligand, salicyliden amino-o-hydroxy benzene, has derived from salicylaldehyde and o-amino phenol. This ligand reacts with a series of Mo (VI), Mo (V), Mo (IV), and Mo (III) oxidated states and forms a new complexes; [Mo O$_2(H_2O)\;(C_{13}H_9O_2N)]$, [MoO Cl$(H_2O)\;(C_{13}H_9O_2N)]$, [Mo(SCN)$_2(H_2O)\;(C_{13}H_9O2_N)]$ 및 $[Mo(H_2O)_2\;(C_{13}H_9O_2N)]_2O$. The Mo (VI), Mo(V) and Mo(Ⅳ) ions in these complexes are octahedron, hexa coordinate, and the mole ratio of these ions to the ligand are 1 : 1, but Mo (III) Complex is a Mo-O-Mo oxygen bridge bond and polynuclear, and the mole ratio of Mo (III) to the ligand 1 : 1 above facts are identified from the data of Infrared spectra, visible spectra, and elemental analysis.

• Journal of the Korea institute for structural maintenance and inspection
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• v.5 no.3
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• pp.123-130
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• 2001

The purpose of this study is to suggest the non-destructive equation for the estimation of concrete strength by ultrasonic pulse velocity at the Age of 28day compressive strength of $600{\sim}1000kg/cm^2$. For this purpose, selected test variables were water-hinder ratio, replacement ratio of silica fume, binder content, maximum size of coarse aggregate and sand-aggregate ratio. From the results, the average increase or decrease of ultrasonic pulse velocity is 61m/sec for each 1% of moisture content. And the correlation equation between the ultrasonic pulse velocity and the compressive strength of concrete is as follows. $F_c=896.3V_p-3514$ ($R^2$ = 0.81) where, $F_c$ : compressive strength($kgf/cm^2$), $V_p$ : ultrasonic velocity(km/sec).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.3
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• pp.147-151
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• 2016

Graphene has a monolayer crystal structure formed with C-atoms and has been used as a base layer of HETs (hot electron transistors). Graphene HETs have exhibited the operation at THz frequencies and higher current on/off ratio than that of Graphene FETs. In this article, we report on the preliminary results of current characteristics from the HETs which are fabricated utilizing highly doped Si collector, graphene base, and 5 nm thin $Al_2O_3$ tunnel layers between the base and Ti emitter. We have observed E-B forward currents are inherited to tunneling through $Al_2O_3$ layers, but have not noticed the Schottky barrier blocking effect on B-C forward current at the base/collector interface. At the common-emitter configuration, under a constant $V_{BE}$ between 0~1.2V, $I_C$ has increased linearly with $V_{CE}$ for $V_{CE}$ < $V_{BE}$ indicating the saturation region. As the $V_{CE}$ increases further, a plateau of $I_C$ vs. $V_{CE}$ has appeared slightly at $V_{CE}{\simeq}V_{BE}$, denoting forward-active region. With further increase of $V_{CE}$, $I_C$ has kept increasing probably due to tunneling through thin Schottky barrier between B/C. Thus the current on/off ration has exhibited to be 50. To improve hot electron effects, we propose the usage of low doped Si substrate, insertion of barrier layer between B/C, or substrates with low electron affinity.

• Journal of Environmental Science International
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• v.13 no.6
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• pp.537-542
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• 2004

$V_{2}O_{5}/TiO_{2}$ catalysts promoted with Mn were prepared and tested for selective catalytic reduction of NOx in $NH_3.$ The effects of promoter content, degree of catalyst loading were investigated for NOx activity while changing temperatures, mole ratio, space velocity and $O_2$ concentration. Among the various $V-{2}O_{5}$ catalysts having different metal loadings, $V-{2}O_{5}$(1 wt.%) catalyst showed the highest activity(98%) under wide temperature range of $200-250^{\circ}C.$ When the $V-{2}O_{5}$ catalyst was further modified with 5 wt.% Mn as a promoter, the highest activity(90-47%) was obtained over the low temperature windows of $100-200^{\circ}C.$ From Mn-$V_{2}O_{5}/TiO_{2}$, it was found that by addition of 5 wt.% Mn on $V_{2}O_{5}/TiO_{2}$ catalyst, reduction activity of catalyst was improved, which resulted in the increase of catalytic activity and NOx reduction. According to the results, NOx removal decreased for 10%, but the reaction temperature down to $100^{\circ}C.$