• Title/Summary/Keyword: V/C ratio

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Properties and SPICE modeling for a Schottky diode fabricated on the cracked GaN epitaxial layers on (111) silicon

  • Lee, Heon-Bok;Baek, Kyong-Hum;Lee, Myung-Bok;Lee, Jung-Hee;Hahm, Sung-Ho
    • Journal of Sensor Science and Technology
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    • v.14 no.2
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    • pp.96-100
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    • 2005
  • The planar Schottky diodes were fabricated and modeled to probe the device applicability of the cracked GaN epitaxial layer on a (111) silicon substrate. On the unintentionally n-doped GaN grown on silicon, we deposited Ti/Al/Ni/Au as the ohmic metal and Pt as the Schottky metal. The ohmic contact achieved a minimum contact resistivity of $5.51{\times}10.5{\Omega}{\cdot}cm^{2}$ after annealing in an $N_{2}$ ambient at $700^{\circ}C$ for 30 sec. The fabricated Schottky diode exhibited the barrier height of 0.7 eV and the ideality factor was 2.4, which are significantly lower than those parameters of crack free one. But in photoresponse measurement, the diode showed the peak responsivity of 0.097 A/W at 300 nm, the cutoff at 360 nm, and UV/visible rejection ratio of about $10^{2}$. The SPICE(Simulation Program with Integrated Circuit Emphasis) simulation with a proposed model, which was composed with one Pt/GaN diode and three parasitic diodes, showed good agreement with the experiment.

Effect of Deposition Temperature on the Properties of Eu3+-doped MgMoO4 Phosphor Thin Films (증착 온도가 Eu3+ 이온이 도핑된 MgMoO4 형광체 박막의 특성에 미치는 영향)

  • Kang, Dongkyun;Cho, Shinho
    • Journal of the Korean institute of surface engineering
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    • v.49 no.1
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    • pp.81-86
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    • 2016
  • $Eu^{3+}$-doped $MgMoO_4$ phosphor thin films were deposited on quartz substrates by radio frequency magnetron sputtering with changing various growth temperatures. The effects of growth temperature on the structure, transmittance, optical band gap, and luminescence of the phosphor thin films were characterized. All the phosphor thin films, irrespective of growth temperature, showed a monoclinic structure with a main (220) diffraction peak. The thin film deposited at a growth temperature of $400^{\circ}C$ indicated an average transmittance of 90% in the wavelength range of 500 ~ 1100 nm and band gap energy of 4.81 eV. The excitation spectra of the phosphor thin films consisted of a broad charge transfer band peaked at 284 nm in the range of 230 ~ 330 nm and two weak peaks located at 368 and 461 nm, respectively. The emission spectra under ultraviolet excitation at 284 nm exhibited a sharp emission peak at 614 nm and several weak bands. All the phosphor thin films showed high asymmetry ratio values, indicating that $Eu^{3+}$ ions incorporated into the host lattice occupied at the non-inversion symmetry sites. The results suggest that the growth temperature plays an important role in growing high-quality phosphor thin films.

Diamond-Like Carbon Films Deposited by Pulsed Magnetron Sputtering System with Rotating Cathode

  • Chun, Hui-Gon;You, Yong-Zoo;Nikolay S. Sochugov;Sergey V. Rabotkin
    • Journal of the Korean institute of surface engineering
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    • v.36 no.4
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    • pp.296-300
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    • 2003
  • Extended cylindrical magnetron sputtering system with rotating 600-mm long and 90-mm diameter graphite cathode and pulsed power supply voltage generator were developed and fabricated. Time-dependent Langmuir probe characteristics as well as carbon films thickness were measured. It was shown that ratio of ions flux to carbon atoms flux for pulsed magnetron discharge mode was equal to $\Phi_{i}$ $\Phi$sub C/ = 0.2. It did not depend on the discharge current in the range of $I_{d}$ / = 10∼60 A since both the plasma density and the film deposition rate were found approximately proportional to the discharge current. In spite of this fact carbon film structure was found to be strongly dependent on the discharge current. Grain size increased from 100 nm at $I_{d}$ = 10∼20 A to 500 nm at $I_{d}$ = 40∼60 A. To deposit fine-grained hard nanocrystalline or amorphous carbon coating current regime with $I_{d}$ = 20 A was chosen. Pulsed negative bias voltage ($\tau$= 40 ${\mu}\textrm{s}$, $U_{b}$ = 0∼10 ㎸) synchronized with magnetron discharge pulses was applied to a substrate and voltage of $U_{b}$ = 3.4 ㎸ was shown to be optimum for a hard carbon film deposition. Lower voltages were not sufficient for amorphization of a growing graphite film, while higher voltages led to excessive ion bombardment and effects of recrystalization and graphitization.

Effects of process variables on aqueous-based AlOx insulators for high-performance solution-processed oxide thin-film transistors

  • Huh, Jae-Eun;Park, Jintaek;Lee, Junhee;Lee, Sung-Eun;Lee, Jinwon;Lim, Keon-Hee;Kim, Youn Sang
    • Journal of Industrial and Engineering Chemistry
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    • v.68
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    • pp.117-123
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    • 2018
  • Recently, aqueous method has attracted lots of attention because it enables the solution-processed metal oxide thin film with high electrical properties in low temperature fabrication condition to various flexible devices. Focusing the development of aqueous route, many researchers are only focused on metal oxide materials. However, for expansive application of the aqueous-based metal oxide films, the systematic study of performance change with process variables for the development of aqueous-based metal oxide insulator film is urgently required. Here, we propose importance of process variables to achieve high electrical-performance metal oxide insulator based on the aqueous method. We found that the significant process variables including precursor solution temperature and humidity during the spincoating process strongly affect chemical, physical, and electrical properties of $AlO_x$ insulators. Through the optimization of significant variables in process, an $AlO_x$ insulator with a leakage current value approximately $10^5$ times smaller and a breakdown voltage value approximately 2-3 times greater than un-optimized $AlO_x$ was realized. Finally, by introducing the optimized $AlO_x$ insulators to solutionprocessed $InO_x$ TFTs, we successfully achieved $InO_x/AlO_x$ TFTs with remarkably high average field-effect mobility of ${\sim}52cm^2V^{-1}\;s^{-1}$ and on/off current ratio of 106 at fabrication temperature of $250^{\circ}C$.

Applicability of Soil Washing with Neutral Phosphate for Remediation of Arsenic-contaminated Soil at the Former Janghang Smelter Site ((구)장항제련소 주변 부지 매입구역 비소 오염토양에 대한 중성 인산염 토양세척법의 적용가능성 평가)

  • Im, Jinwoo;Kim, Young-Jin;Yang, Kyung;Nam, Kyoungphile
    • Journal of Soil and Groundwater Environment
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    • v.19 no.4
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    • pp.45-51
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    • 2014
  • In accordance with the view on remediated soil as a resource, this study assessed the applicability of soil washing with the neutral phosphate for remediation of arsenic (As)-contaminated soil. Three soil samples of different land uses (i.e., rice paddy, upland field and forest land) were collected from the study site, and the aqua regia-extractable As concentrations were 59.2, 30.8 and 53.1 mg/kg, respectively. Among the neutral phosphate reagents, ammonium phosphate showed the highest As washing efficiency. The optimized washing condition was 2-hr washing with 0.5M ammonium phosphate solution (pH 6) and soil to liquid ratio of 1 : 5. The extraction efficiencies of As did not guarantee the residual soil As concentrations to satisfy the Korea soil regulatory level (i.e., Worrisome level) in the three soil samples. To enhance washing efficiency, the As-contaminated soil was submerged in washing solution (1 : 1, w/v) for 24 hr and 1-hr washing with 0.5M ammonium phosphate solution was tested. As extraction efficiencies of 36.1 (rice paddy), 21.4 (upland field) and 26.4% (forest land) were attained, which satisfied the Worrisome level for Region 1 (25 mg/kg of As) in rice paddy, but not in upland field and forest land.

Screen Content Coding Analysis to Improve Coding Efficiency for Immersive Video (몰입형 비디오 압축을 위한 스크린 콘텐츠 코딩 성능 분석)

  • Lee, Soonbin;Jeong, Jong-Beom;Kim, Inae;Lee, Sangsoon;Ryu, Eun-Seok
    • Journal of Broadcast Engineering
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    • v.25 no.6
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    • pp.911-921
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    • 2020
  • Recently, MPEG-I (Immersive) has been exploring compression performance through standardization projects for immersive video. The MPEG Immersion Video (MIV) standard technology is intended to provide limited 6DoF based on depth map-based image rendering (DIBR). MIV is a model that processes the Basic View and the residual information into an Additional View, which is a collection of patches. Atlases have the unique characteristics depending on the kind of the view they are included, requiring consideration of the compression efficiency. In this paper, the performance comparison analysis of screen content coding tools such as intra block copy (IBC) is conducted, based on the pattern of various views and patches repetition. It is demonstrated that the proposed method improves coding performance around -15.74% BD-rate reduction in the MIV.

Development and application analysis of high-energy neutron radiation shielding materials from tungsten boron polyethylene

  • Qiankun Shao;Qingjun Zhu;Yuling Wang;Shaobao Kuang;Jie Bao;Songlin Liu
    • Nuclear Engineering and Technology
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    • v.56 no.6
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    • pp.2153-2162
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    • 2024
  • The purpose of this study is to develop a high-energy neutron shielding material applied in proton therapy environment. Composite shielding material consisting of 10.00 wt% boron carbide particles (B4C), 13.64 wt% surface-modified cross-linked polyethylene (PE), and 76.36 wt% tungsten particles were fabricated by hot-pressure sintering method, where the optimal ratio of the composite is determined by the shielding effect under the neutron field generated in typical proton therapy environment. The results of Differential Scanning Calorimetry measurements (DSC) and tensile experiment show that the composite has good thermal and mechanical properties. In addition, the high energy-neutron shielding performance of the developed material was evaluated using cyclotron proton accelerator with 100 MeV proton. The simulation shows a 99.99% decrease in fast neutron injection after 44 cm shielding, and the experiment result show a 99.70% decrease. Finally, the shielding effect of replacing part of the shielding material of the proton therapy hall with the developed material was simulated, and the results showed that the total neutron injection decreased to 0.99‰ and the neutron dose reduced to 1.10‰ before the enhanced shielding. In summary, the developed material is expected to serve as a shielding enhancement material in the proton therapy environment.

Effect of HA Crystals Precipitated by Hydrothermal-Treatment on the Bioactivity of Ti-6Al-7Nb Alloy (열수처리에 의해 석출된 HA 결정이 Ti-6Al-7Nb 합금의 생체활성에 미치는 영향)

  • Kwon O. S.;Choi S. K.;Moon J. W.;Lee M. H.;Bae T. S.;Lee O. Y.
    • Korean Journal of Materials Research
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    • v.14 no.9
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    • pp.607-613
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    • 2004
  • This study was to investigate the surface properties of electrochemically oxidized Ti-6Al-7Nb alloy by anodic spark discharge technique. Anodizing was performed at current density 30 $mA/cm^2$ up to 300 V in electrolyte solutions containing $DL-{\alpha}$-glycerophosphate disodium salt hydrate($DL-{\alpha}$-GP) and calcium acetate (CA). Hydrothermal treatment was done at $300^{\circ}C$ for 2 hrs to produce a thin outermost layer of hydroxyapatite (HA). The bioactivity was evaluated from HA formation on the surfaces in a Hanks' solution with pH 7.4 at $36.5^{\circ}C$ for 30 days. The size of micropores and the thickness of oxide film increased and complicated multilayer by increasing the spark forming voltage. Needle-like HA crystals were observed on anodic oxide film after the hydrothermal treatment at $300^{\circ}C$ for 2 hrs. When increasing $DL-{\alpha}$-GP in electrolyte composition, the precipitated HA crystals showed the shape of thick and shorter rod. However, when increasing CA, the more fine needle shape HA crystals were appeared. The bioactivity in Hanks' solution was accelerated when the oxide films composed with strong anatase peak with presence of rutile peak. The increase of amount of Ca and P was observed in groups having bioactivity in Hanks' solution. The Ca/P ratio of the precipitated HA layer was equivalent to that of HA crystal and it was closer to 1.67 as increasing the immersion time in Hanks' solution.

Clinical Results of Surgical Treatment of an Isolated Complete Atrioventricular Septal Defect (완전방실중격결손증의 외과적 요법에 관한 임상적 고찰)

  • 이정상
    • Journal of Chest Surgery
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    • v.24 no.2
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    • pp.123-134
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    • 1991
  • Twenty eight patients had undergone repair of an isolated complete atrioventricular septal defect between April 1986 and September 1990 in Seoul National University Children`s Hospital. The group comprised 13 male and 15 female patients. They ranged in age from 2 months to 8 years[mean 18.6months] and in weight from 3. 4kg to 23kg[mean 9.0$\pm$4.6kg]. They were analysed as Rastelli type A in 17 patients, Rastelli type B in 2 patients, and Rastelli type C in 9 patients. Seven patients had concomitant Down`s syndrome. All patients had large left-to-right shunt[mean pulmonary to systemic flow ratio 3.5 $\pm$2.2 ranging from 0.68 to 10.0] and high pulmonary systolic pressure[mean 74$\pm$18.8mmHg, ranging from 35 to 110]. In 11 patients, one patch technique was used to close the atrial and ventricular septal defect and 16 patients were undergone by two patch technique. We urgently managed only one patient by pulmonary artery banding whose anatomy was Rastelli type C and severe mitral regurgitation was identified. Postoperative complete A - V block was noted in 3 patients, two of whom were dead in operating room due to combined LVOTO and myocardial failure, and one patient with Rastelli type C was undergone by VVI type permanent pacemaker insertion 1wk later after two patch technique, but we had to manage him by modified Konno operation and total correction due to LVOTO and VSD leakage and severe mitral regurgitation 3 years later. Another two reoperation cases due to severe mitral regurgitation after two patch technique were undergone, one of whom we managed by mitral annuloplasty 3 months later but aggravated mitral regurgitation made us to control him by MVR 3 months later. Another one case of VSD leakage and tricuspid regurgitation was managed by total correction but she died of respiratory insufficiency 14 days later. We experienced pulmonary hypertensive crisis in 3 patients, who were dead in two cases comparing with one control case. So operative mortality is 9/27[33.6%], in one patch group of 3/11[29.2%] comparing with two patch group of 6/16[37.5%]. In summary, causes of death were pump weaning failure, myocardial failure and low cardiac output syndrome and pulmonary hypertensive crisis, resp. failure, complete AV block. Mean follow up period is 15.8$\pm$10.7 months[ranging from 3months to 37 months]

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High Resolution TEM Observations in $Hg_{1-x}\;Tl_{x}\;Ba_{2}(Ca_{0.86}\;Sr_{0.14})_{2}\;Cu_{3}\;O_{8+\delta}$ Superconductors (고온 초전도체 $Hg_{1-x}\;Tl_{x}\;Ba_{2}(Ca_{0.86}\;Sr_{0.14})_{2}\;Cu_{3}\;O_{8+\delta}$의 고분해능 TEM에 의한 구조 관찰)

  • Lee, Hwack-Joo;Ryu, Hyun;Hur, Nam-H.;Park, Yong-K.
    • Applied Microscopy
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    • v.25 no.4
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    • pp.124-131
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    • 1995
  • High resolution transmission electron microscopic observations on the $Hg_{1-x}\;Tl_{x}\;Ba_{2}(Ca_{0.86}\;Sr_{0.14})_{2}\;Cu_{3}\;O_{8+\delta}$(x=0.00, 0.25, 0.50, 0.75) were carried out using side-entry type TEM working at 300 kV. The TEM samples are prepared by powder method. The pellets are crushed in agatar motar and suspended in $CCl_4$, solution and scooped in holely carbon microgrid. The 1223 structures are observed in all samples with [010] zone axis. Except x=0.25 sample, the lattice parameter a and c tend to decrease as the thallium contents are increased ranging from 0.3936 nm to 0.3713 nm for a, and from 1.6131 nm to 1.5138 nm for c parameter. Those of x=0.25 sample are reduced too much, 0.3785 nm for a, 1.5375 nm for c. The sample with x=0.25 shows the intergrowth of 1223 and 1234 structure with the ratio of 19 to 1. As the thallium content increases, the structures become more stable without having any defect. The samples are damaged by electron beam irradiation during the observation, however the structure can endure longer as the thallium contents are increased.

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