• Journal of architectural history
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• v.21 no.3
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• pp.45-54
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• 2012

This research work is to analyze architectural characteristics of Sungnyemun especially in King Yeongjo's reign in Joseon dynasty. The result of this research is summarized as following: 1. The architectural characteristics of Sungnyemun in King Yeongjo's reign are closely related with Confucian ceremonies such as Jeon-jwa and Heon-goek-rye. To perform these ceremonies, some lower walls of Sungnyemun's wooden pavilion were removed and used as ceremonial space. And after ceremony it was restored. 2. The floor type of center bay of the 1st story of wooden pavilion should have a type of floor using long and narrow fine tree plate, which is same type before the repair work of 1960's dismantlement. 3. The width of east stairway which is reached to east small gate, was changed just before Japanese's rule(1910~1945), should be broaden than present width, which is proven through the recent excavation. 4. The reason of asymmetric characteristic of locations of both east and west narrow-gate, and widths of east and west stairway, are related with order of King's ceremony. * Jeonjwa : a ceremony to see national affairs or receive royalty from officials in main hall or main gate of palace in Joseon dynasty (some times open to public) * Heon-goek-rye : a ceremony after win a war and offering to king enemy's ear or head in Joseon dynasty.

• Journal of the Korean Institute of Gas
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• v.3 no.3 s.8
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• pp.29-33
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• 1999

ln this study, a computerized prototype program was developed with frequency analysis system as a main system and data base as sub-items to utilize data. Through use of gate-by-gate analysis and minimal cut set using boolean algebra, the frequency analysis program peformed the qualitative approach for the accident development path and a quantitative risk analysis. In conclusion, it is thought that the resulting installation will be effective for lessening the probability of accidents through use of this lower cost software.

• Journal of architectural history
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• v.8 no.1 s.18
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• pp.41-52
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• 1999

This study aims to infer the plan and location of the government office building in Chongju Castle in the Late Yi-dynasty. The conclusion is as follows: 1. The Chongju Castle Map(淸州邑城圖, late in the 18th century, hereinafter referred to CCM) provides the detail arrangement and location of Government Office Building in Chongju Castle. And the road structure and plan of the CCM is almost same with the present time. 2. As compared with CCM and a Chongju-land Registration Map(淸州面地籍原圖, 1913, CRM) to infer the location of the traditional government office building in Chongju Castle, the building locations of Gaek-Sa(客舍) Donghun(東軒)'s region in CCM are almost accordance with today's. But those of Byungyoung(兵營) Group's region are represented by a little error. So the locations of Byungyoung(兵營) Group's region rearranged, moved down to be in accordance with the approach circulation of Main Gate(閉門樓) which is shown in CRM. 3. The records, on the plan of the traditional government office building in Chongju Castle, have proved that the plan of Gaek-Sa was a width of 11 bay and a depth of 2 bay. A width of 3 bay drawn in CCM, the present plan of Donghun is a width of 7 bay and a depth of 4 bay. The main building and especially the double-storied Main Gate($4{\times}3$) of Byungyoung Group are exactly in keeping with the present road structure.

• Journal of IKEEE
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• v.15 no.2
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• pp.143-148
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• 2011

MOS (Metal-Oxide Semconductor) devices among the most sensistive of all semiconductors to radiation, in particular ionizing radiation, showing much change even after a relatively low dose. The necessity of a radiation dosimeter robust enough for the working environment has increased in the fields of aerospace, radio-therapy, atomic power plant facilities, and other places where radiation exists. The power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) has been tested for use as a gamma radiation dosimeter by measuring the variation of threshold voltage based on the quantity of dose, and a maximum total dose of 30 krad exposed to a $^{60}Co$ ${\gamma}$-radiation source, which is sensitive to environment parameters such as temperature. The gate oxide structures give the main influence on the changes in the electrical characteristics affected by irradiation. The variation of threshold voltage on the operating temperature has caused errors, and needs calibration. These effects can be overcome by adjusting gate oxide thickness and implanting impurity at the surface of well region in MOSFET.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.682-687
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• 2014

We have performed reverse gate bias stress tests on AlGaN/GaN-on-Si Heterostructure FETs (HFETs). The shift of threshold voltage ($V_{th}$) and the reduction of on-current were observed from the stressed devices. These changes of the device parameters were not permanent. We investigated the temporary behavior of the stressed devices by analyzing the temperature dependence of the instabilities and TCAD simulation. As the baseline temperature of the electrical stress tests increased, the changes of the $V_{th}$ and the on-current were decreased. The on-current reduction was caused by the positive shift of the $V_{th}$ and the increased resistance of the gate-to-source and the gate-to-drain access region. Our experimental results suggest that electron-trapping effect into the shallow traps in devices is the main cause of observed instabilities.

• Transactions on Electrical and Electronic Materials
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• v.17 no.6
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• pp.329-334
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• 2016

In this work, the temperature dependence of electrical parameters of nanoscale SOI (silicon-on-insulator) TG (triple gate) n-FinFET (n-channel Fin field effect transistor) was investigated. Numerical device simulator $ATLAS^{TM}$ was used to construct, examine, and simulate the structure in three dimensions with different models. The drain current, transconductance, threshold voltage, subthreshold swing, leakage current, drain induced barrier lowering, and on/off current ratio were studied in various biasing configurations. The temperature dependence of the main electrical parameters of a SOI TG n-FinFET was analyzed and discussed. Increased temperature led to degraded performance of some basic parameters such as subthreshold swing, transconductance, on-current, and leakage current. These results might be useful for further development of devises to strongly down-scale the manufacturing process.

• Journal of architectural history
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• v.6 no.3 s.13
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• pp.23-44
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• 1997

There are two main halls in the Main Palace of the Koryo Dyansty in the 11th and 12th century. One, named Hoekyongjeon, was served only for special ceremony ; hundred Buddhist priests' sermons or receiption of Chinese emperor's letters. The other one, Kondukjeon, was used as ordinary throne hall. The ordinary throne hall was built when the palace was erected at the beginning era of the Koryo Danasty, while the special ceremony hall built after the reconstruction in the 11th century. The throne hall was located at northwest side of the special ceremony hall. Audience chamber and King's bedroom were located at west and northwest side of the throne hall. The basic layout of the Palace showed unsymmetrical shape. It seemed mainly effected by its undulating terraine. The acess road from main gate to the throne hall showed zigzag way, by following a stream penetrating the site obliquely, It could be said that the Main Palace of the Koryo Danasty achieved its originality on the aspect of unsymmetrical layout and zigzag acess road, which was not found in the former palaces.

• The Journal of Korean Medicine
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• v.17 no.2 s.32
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• pp.88-99
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• 1996

Impotence is defined as a consistent inability to achieve or maintain penile erection that is adequate for completion of sexual intercourse. In oriental midicine, the chief cause of impotence is the decline of the fire from the gate of life, and in western medicine that is psycogenic and organic. Because of the increase aging people and psycologic stress that modern people get, impotence became common. This bibliographic study on impotence in the oriental and western medicine books has come to the following conclusions. 1. The main cause of impotence in the oriental medicine is the decline of the fire from the gate of life(命門火衰), followed by the deficiency of both heart and spleen(心脾兩虛), the depression of Liver energy(肝氣鬱結), and attack of blended wetness and heat to the lower wanner(濕熱下注). 2. The theraphics of impotence in oriental medicine are warming and strenghthening Kidney. softness of Liver energy, tonifying the Kidney to relieve mental strain, clear away the wetness-heat, and infairment of Heart and Spleen. 3. The prescriptions of impotence are Yugyeyum, Gyibitang, Soyosan, Sunjitang, and Yongdamsagantang. 4. In the western medicine, psycotherapy, medical therapy and surgical therapy are the major way to treat impotence.

• Journal of Power Electronics
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• v.14 no.2
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• pp.217-225
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• 2014

This paper deals with the optimization of the driving techniques for the ZVT synchronous buck converter proposed in [1]. Two new gate drive circuits are proposed to allow this converter to operate by only one control signal as a 12V voltage regulator module (VRM). Voltage-driven method is applied for the synchronous rectifier. In addition, the control signal drives the main and auxiliary switches by one driving circuit. Both of the circuits are supplied by the input voltage. As a result, no supply voltage is required. This approach decreases both the complexity and cost in converter hardware implementation and is suitable for practical applications. In addition, the proposed SR driving scheme can also be used for many high frequency resonant converters and some high frequency discontinuous current mode PWM circuits. The ZVT synchronous buck converter with new gate drive circuits is analyzed and the presented experimental results confirm the theoretical analysis.

• ETRI Journal
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• v.43 no.4
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• pp.728-745
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• 2021

Carbon nanotube field-effect transistors (CNTFETs) have been widely studied as a promising technology to be included in post-complementary metal-oxide-semiconductor integrated circuits. Despite significant advantages in terms of delay and power dissipation, the fabrication process for CNTFETs is plagued by fault occurrences. Therefore, developing a fast and accurate method for estimating the reliability of CNTFET-based digital circuits was the main goal of this study. In the proposed method, effects related to faults that occur in a gate's transistors are first represented as a probability transfer matrix. Next, the target circuit's graph is traversed in topological order and the reliabilities of the circuit's gates are computed. The accuracy of this method (less than 3% reliability estimation error) was verified through various simulations on the ISCAS 85 benchmark circuits. The proposed method outperforms previous methods in terms of both accuracy and computational complexity.