• 전자공학회논문지A
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• 제30A권7호
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• pp.60-74
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• 1993

Experiments of RIE of tungsten films using SF$_{6}$ plasma were conducted to investigate the effect of process parameters on etch rate, uniformity, anisotropy, and selectivity. As power increased, the etch rate increased. Maximum etch rate was obtained at 200mtorr As interelectrode spacing increased the etch rate increased for P < 200mtorr while it decreased for P> 200mtorr. Etch rate was maximum at 20 sccm gas flow rate. As substrate temperature increased, the etch rate increased and activation energy was 0.046 eV. In addition, maximum etch rate was acquired at 20% $O_{2}$ addition. The etch rate slightly increased when Ar was added up to 20% while it continuously decreased when N$_{2}$ was added. Uniformity got improved as pressure decreased and was less than 4% for P <100mtorr. Mass spectrometer was utilized to analyze gas composition and S and F peaks were observed from XPS analysis with increasing power. The anisotropy was better for smaller power and spacing, and lower pressure and temperature. It improved when CH$_{4}$ was added and anisotropic etch profile was obtained when about 10% $O_{2}$ was added. The selectjvity was better for smaller power larger pressure and spacing, and lower temperature. Especially. low temperature processing was proposed as a novel method to improve the anisotropy and selectivity.

• 한국표면공학회지
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• 제32권4호
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• pp.513-520
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• 1999

In this study, we investigated the effects of variously configured magnets on the characteristics of the plasmas to enhance plasma uniformity and density of an inductively coupled plasma source. As the magnets, Helmholtz type axial electromagnets and various multi-dipole magnets types around the chamber wall were used. To characterize the plasma as a function of the combination of the magnets and magnetic field strengths, ion density, electron temperature, and plasma potential were measured using an electrostatic probe along the chamber diameter for Ar plasmas. The measured maximum ion densities were $8$\times$10^{ 11}$$cm^{-3}$ with 600W inductive power and at 5mTorr of operational pressure and the uniformity of ion density was less than 5.9% at 2mTorr of operational pressure. The combination of an optimized multi-dipole magnet type and an axial electromagnet showed the lowest electron temperature (3eV) and plasma potential ($34V{p}$ )

• 설비공학논문집
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• 제23권3호
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• pp.216-222
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• 2011

Recently, hybrid air-conditioning system has been proposed and applied to achieve building energy saving. One example is a system combining radiation panel with natural wind-induced cross-ventilation. However, few research works have been conducted on the non-uniformity of thermal comfort in such hybrid air-conditioning system. In this paper, both thermal environment and non-uniform thermal comfort of human thermal model under various air-conditioning system, including hybrid system, were evaluated in a typical office room using coupled simulation of computation fluid dynamics, radiation model and a human thermal model. The non-uniformity of thermal comfort was evaluated from the deviation of surface temperature of human thermal model. Flow fields and temperature distribution in each case were represented.

• 한국표면공학회지
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• 제47권1호
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• pp.20-24
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• 2014

Joule heat is generated by applying an electric filed to a conductive layer located beneath or above the amorphous silicon film, and is used to raise the temperature of the silicon film to crystallization temperature. An electric field was applied to an indium tin oxide (ITO) conductive layer to induce Joule heating in order to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced within the range of a millisecond. To investigate the kinetics of Joule-heating induced crystallization (JIC) solid phase crystallization was conducted using amorphous silicon films deposited by plasma enhanced chemical vapor deposition and using tube furnace in nitrogen ambient. Microscopic and macroscopic uniformity of crystallinity of JIC poly-Si was measured to have better uniformity compared to that of poly-Si produced by other methods such as metal induced crystallization and Excimer laser crystallization.

• 전기학회논문지
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• 제60권4호
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• pp.753-758
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• 2011

Magnetic field and Electric field of High Temperature Superconducting magnet are very important to analysis of superconducting magnet. The maximum perpendicular magnetic field was applied to the outermost pancake windings. The critical current of all the magnet windings is limited by the critical current of the outermost pancake windings. The E-J relation was used to determine the critical current, and an evolution s trategy was adopted for the optimization of gap length between each pancake windins. The results of calculations show that the critical current and the central magnetic field and uniformity increased by 82.6% and 31.6% and 50.8%, respectively, for a magnet consisting of ten pancake windings. This paper did an analysis the cause of increase the critical current and central magnetic field and uniformity in no gap and optimal gap model.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 1997년도 한국자동제어학술회의논문집; 한국전력공사 서울연수원; 17-18 Oct. 1997
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• pp.434-437
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• 1997

In this paper, we present an $H^{\infty}$ controller design of RTP system satisfying robust stability and performance using weighted mixed sensitivity minimization. In industrial fields, RTP system is widely used for improving the oxidation and the annealing in semiconductor manufacturing process. The main control factors are temperature control of wafer and uniformity in the wafer. The control of temperature and uniformity has been solved by PI control method. We improve robust stability and performance of RTP system by the design of $H^{\infty}$ controller using the weighted mixed sensivity function. An example is proposed to show the validity of proposed method.d.

• 전기학회논문지
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• 제59권1호
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• pp.134-137
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• 2010

An LED sensor luminaire for visual function improvement necessitates the control algorithm for light level adjustment and the appropriate lens design. The control algorithm adapts to surround lighting condition, and thus has the advantages of energy saving and glare reduction. The multi-cell lens design improves color temperature uniformity and spatial light distribution of the luminaire. Experimental and simulated results show that this approach contributes noticeably to energy saving and color temperature uniformity of the LED sensor luminaire.

• 반도체디스플레이기술학회지
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• 제15권4호
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• pp.33-35
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• 2016

In this study, a new plasma source was used in the ALD process. Line type plasma sources were analyzed by electric and magnetic field simulation. And the results were compared with plasma density and electron temperature measurement results. As a result, the results of the computer simulation and the diagnosis results of plasma density and electron temperature showed similar tendency. At this time, the plasma uniformity is 95.6 %. $Al_2O_3$ thin film was coated on 6 inch Si-wafer, using this plasma source. The uniformity of the thin film was more than 98% and the thin film growth rate was 0.13 nm/cycle.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2001년도 춘계학술대회 논문집
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• pp.566-569
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• 2001

Hot Plate is the major unit that it used to remove damp of wafer surface, to strength adhesion of photoresist(PR) and to bake coated PR in FAB process of semiconductor. It is necessary to guarantee the performance of Hot Plate(HP). Therefore, in this study designed and developed the reliability system of HP to measure and estimated thermal uniformity and flatness in temperature setting amplitude $0~250^{\circ}C$. We developed the techniques that measures and analyzes thermal uniformity using infrared thermal vision, and compensates measuring error of flatness using laser displacement sensor. For measuring flatness, we specially makes the measurement stage of 3 axes which adopts the precision encoder. The allowable error of measuring technique is less than thermal uniformity, $\pm 0.1^{\circ}C$ and flatness, $\pm 1mm$. It is expected that the developed system can measure from $\Phi$210(wafer 8") to $\Phi$356(wafer 12") and also can be used in performance test of the Cool Plate and industrial heater, etc.

• 한국정밀공학회지
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• 제19권10호
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• pp.156-162
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• 2002

There are many factors affecting the results of CMP (Chemical Mechanical Polishing). Among them, the temperature is related to the removal rate and WIWNU (Within Wafer Non-Uniformity). In other words, the removal rate is proportional to the temperature and the variation of temperature distribution on a pad affects the non-uniformity within a wafer. In the former case, the active chemistry improves the rate of chemical reaction and the removal rate becomes better. But, there are not many advanced studies. In the latter case, a kinematical analysis between work-piece and pad can be obtained. And such result analysed from the mechanical aspect can be directly related to the temperature distribution on a pad affecting WIWNU. Meanwhile, the temperature change affects the quantities of both slurry and pad. The change of a pH value of the slurry chemistry due to a temperature variation affects the surface state of an abrasive particle and hence the agglomeration of abrasives happens above the certain temperature. And the pH alteration also affects the zeta potential of a pad surface and therefore the electrical force between pad and abrasive changes. Such results could affect the removal rate and etc. Moreover, the temperature changes the 1st and 2nd elastic moduli of a pad which are closely related to the removal rate and the WIWNU.