We prepared a new a SOS(silicon-on-silicide) wafer pair which is consisted of Si(100)/1000$\AA$-NiSi Si (100) layers. SOS can be employed in MEMS(micro- electronic-mechanical system) application due to low resistance of the NiSi layer. A thermally evaporated $1000\AA$-thick Ni/Si wafer and a clean Si wafer were pre-mated in the class 100 clean room, then annealed at $300~900^{\circ}C$ for 15hrs to induce silicidation reaction. SOS wafer pairs were investigated by a IR camera to measure bonded area and probed by a SEM(scanning electron microscope) and TEM(transmission electron microscope) to observe cross-sectional view of Si/NiSi. IR camera observation showed that the annealed SOS wafer pairs have over 52% bonded area in all temperature region except silicidation phase transition temperature. By probing cross-sectional view with SEM of magnification of 30,000, we found that $1000\AA$-thick uniform NiSi layer was formed at the center area of bonded wafers without void defects. However we observed debonded area at the edge area of wafers. Through TEM observation, we found that $10-20\AA$ thick amourphous layer formed between Si surface and NiSix near the counter part of SOS. This layer may be an oxide layer and lead to degradation of bonding. At the edge area of wafers, that amorphous layer was formed even to thickness of $1500\AA$ during annealing. Therefore, to increase bonding area of Si NiSi ∥ Si wafer pairs, we may lessen the amorphous layers.
Characteristics of particle holdup and heat transfer were investigated in a liquid-particle swirling fluidized bed whose diameter was 0.102 m and 2.5 m in height. Effects of liquid velocity, particle size and swirling liquid ratio($R_s$) on the particle holdup and immersed heater-to-bed overall heat transfer coefficient were examined. The particle holdup increased with increasing particle size and swirling liquid ratio but decreased with increasing liquid velocity.The local particle holdup was relatively high in the region near the heater when the $R_s$ value was 0.1~0.3, but the radial particle holdup was almost uniform when the $R_s$ value was 0.5, whereas, when the $R_s$ value was 0.7, the local particle holdup was relatively low in the region near the heater. The heat transfer characteristics between the immersed heater and the bed was well analyzed by means of phase space portraits and Kolmogorov entropy(K) of the time series of temperature difference fluctuations. The phase space portraits of temperature difference fluctuations became stable and periodic and the value of Kolmogorov entropy tended to decrease with increasing the value of $R_s$ from 0.1 to 0.5. The Kolmogorov entropy exhibited its maximum value with increasing liquid velocity. The value of overall heat transfer coefficient(h) showed its maximum value with the variation of liquid velocity, bed porosity or swirling liquid ratio, but it increased with increasing particle size. The value of K exhibited its maximum at the liquid velocity at which the h value attained its maximum. The particle holdup and overall heat transfer coefficient were well correlated in terms of dimensionless groups of operating variables.
Journal of the Korean Crystal Growth and Crystal Technology
/
v.25
no.2
/
pp.51-55
/
2015
The present research is focused on the effect of porous graphite what is influenced on the 4H-SiC crystal growth by PVT method. We expect that it produces more C-rich and a change of temperature gradient for polytype stability of 4H-SiC crystal as adding the porous graphite in the growth cell. The SiC seeds and high purity SiC source materials were placed on opposite side in a sealed graphite crucible which was surrounded by graphite insulator. The growth temperature was around $2100{\sim}2300^{\circ}C$ and the growth pressure was 10~30 Torr of an argon pressure with 5~15 % nitrogen. 2 inch $4^{\circ}$ off-axis 4H-SiC with C-face (000-1) was used as a seed material. The porous graphite plate was inserted on SiC powder source to produce a more C-rich for polytype stability of 4H-SiC crystal and uniform radial temperature gradient. While in case of the conventional crucible, various polytypes such as 6H-, 15R-SiC were observed on SiC wafers, only 4H-SiC polytype was observed on SiC wafers prepared in porous graphite inserted crucible. The defect level such as MP and EP density of SiC crystal grown in the conventional crucible was observed to be higher than that of porous graphite inserted crucible. The better crystal quality of SiC grown using porous graphite plate was also confirmed by rocking curve measurement and Raman spectra analysis.
Journal of the Korean Institute of Landscape Architecture
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v.52
no.2
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pp.79-95
/
2024
The purpose of this study was to find the changes in the habitat of wild birds caused by climate change in urban rivers and protected areas that greatly require ecological functions. In the future, this study can be used as a management index to protect the urban river ecosystem and maintain the health of sustainable urban rivers, thereby ensuring biodiversity. The Tancheon Ecological and Landscape Conservation Area, selected as a target site, has been affected by climate change. The four seasons of Korea have a distinct temperate climate, but the average annual temperature in Seoul has risen by 2.4-2.8℃ over the last 40 years. Winter temperatures tended to gradually increase. Precipitation, which was concentrated from June to August, is now changing into localized torrential rain and a uniform precipitation pattern of several months. Climate change causes irregular and unforeseen features. Climate change has been shown to have various effects on urban river ecosystems. The decrease in the area of water surface and sedimentary land impacted river shape change and has led to large-scale terrestrialization. Plants showed disturbance, and the vegetation was simplified. The emergence of national climate change indicator species, the development of foreign herbaceous plants, the change of dry land native herbaceous species, and wet intelligence vegetation were developed. Wild birds appeared in the territory of winter-summer migratory. In addition, species change and the populations of migratory birds also occurred. It was judged that fluctuations in temperature and precipitation and non-predictive characteristics affect the hydrological environment, plant ecology, and wild birds connecting with the river ecosystem. The results of this study were to analyze how climate change affects the habitat of wild birds and to develop a management index for river ecological and landscape conservation areas where environmental and ecological functions in cities operate. This study can serve as a basic study at the level of ecosystem services to improve the health of urban rivers and create a foundation for biodiversity.
Volatile organic compounds (VOCs) have been recognized as major contributor to air pollution. The catalytic oxidationis is one of the most important processes for VOCs destruction due to the possibility getting high efficiency at low temperature. In this study, monometallic Pt, Ir and bimetallic Pt-Ir were supported to $TiO_2$. In order to distribute metals uniformly, $H_2O-H_2$ treatment method was used. Xylene, toluene and MEK were used as reactants. The monometallic or bimetallic catalysts were prepared by the excess wetness impregnation method and characterized by XRD, XPS, and TEM analysis. Pt catalyst showed higher conversion than Ir catalyst and Pt-Ir bimetallic catalyst showed the highest conversion. The catalysts prepared by $H_2O-H_2$ treatment had better VOC's conversion than that of nothing treatment. In the VOCs oxidation, Pt-Ir bimetallic catalysts had multipoint active sites, so it improved the range of Pt metal state. Therefore, bimetallic catalysts showed higher conversion of VOCs than monometallic ones. $H_2O-H_2$ treatment effected an uniform distribution of Pt particles. In VOCs oxidation was found to follow first order reaetion kinetics. The activation energy of $H_2O-H_2$ treatment catalysts was lower than that of untreated ones. In this study, the a small amount of Ir was used with Pt to promote the oxidation conversion of VOCs.
Kim, J.O.;Shin, H.W.;Choe, J.W.;Lee, S.J.;Kim, C.S.;Noh, S.K.
Journal of the Korean Vacuum Society
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v.18
no.2
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pp.108-115
/
2009
The superlattice infrared photodetector (SLIP) with an active layer of 8/8-ML InAs/GaSb type-II strained-layer superlattice (SLS) of 150 periods was grown by MBE technique, and the proto-type discrete device was defined with an aperture of $200-{\mu}m$ diameter. The contrast profile of the transmission electron microscope (TEM) image and the satellite peak in the x-ray diffraction (XRD) rocking curve show that the SLS active layer keeps abrupt interfaces with a uniform thickness and a periodic strain. The wavelength and the bias-voltage dependences of responsivity (R) and detectivity ($D^*$) measured by a blackbody radiation source give that the cutoff wavelength is ${\sim}5{\mu}m$, and the maximum Rand $D^*$ ($\lambda=3.25{\mu}m$) are ${\sim}10^3mA/W$ (-0.6 V/13 K) and ${\sim}10^9cm.Hz^{1/2}/W$ (0 V/13 K), respectively. The activation energy of 275 meV analyzed from the temperature dependent responsivity is in good agreement with the energy difference between two SLS subblevels of conduction and valence bands (HH1-C) involving in the photoresponse process.
'Gonji-2ho' a new variety of oyster mushroom, fitting for the bag culture, was bred by mating between monokaryons isolated from GMPO35338 and Jangpug. In the major characteristics of fruit body, the pilei were thick and dark-gray and the stipes were thick and long with softness. It was great in elasticity and cohesivness of tissue as compared to Suhan-1ho. The optimum temperature for the mycelial growth was around $26{\sim}29^{\circ}C$ and for the pinheading and growth of fruit body was around $14{\sim}18^{\circ}C$. In the bag culture, it was required around 20 days at incubation period and 5 days at primordia formation. The fruit body was grown vital and uniform. The yields were 323.3g/kg bag. This variety has high yielding capacity, cultivation stability and the resistance to the bacterial brown blotch disease.
Kim, Byeong-Seong;Lee, Jong-Un;Son, Gi-Seok;Choe, Min-Su;Lee, Dong-Jin;Heo, Geun;Nam, In-Cheol;Hwang, Seong-U;Hwang, Dong-Mok
Proceedings of the Korean Vacuum Society Conference
/
2012.08a
/
pp.375-375
/
2012
Graphene is a sp2-hybridized carbon sheet with an atomic-level thickness and a wide range of graphene applications has been intensely investigated due to its unique electrical, optical, and mechanical properties. In particular, hybrid graphene structures combined with various nanomaterials have been studied in energy- and sensor-based applications due to the high conductivity, large surface area and enhanced reactivity of the nanostructures. Conventional metal-catalytic growth method, however, makes useful applications difficult since a transfer process, used to separate graphene from the metal substrate, should be required. Recently several papers have been published on direct graphene growth on the two dimensional planar substrates, but it is necessary to explore a direct growth of hierarchical nanostructures for the future graphene applications. In this study, uniform graphene layers were successfully synthesized on highly dense dielectric nanowires (NWs) without any external catalysts. We also demonstrated that the graphene morphology on NWs can be controlled by the growth parameters, such as temperature or partial pressure in chemical vapor deposition (CVD) system. This direct growth method can be readily applied to the fabrication of nanoscale graphene electrode with designed structures because a wide range of nanostructured template is available. In addition, we believe that the direct growth growth approach and morphological control of graphene are promising for the advanced graphene applications such as super capacitors or bio-sensors.
Kim, Jae-Young;Kim, Tae-Seung;Hwang, Hye-Won;Oh, Shin-Young;Choi, Joon-Weon
Journal of the Korean Wood Science and Technology
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v.40
no.3
/
pp.194-203
/
2012
1-Ethyl-3-methylimidazolium acetate known as efficient biomass pretreatment reagent was used for the extraction of lignin from rigida pine wood (pitch pine), which was called to ionic liquid lignin (ILL), and chemical structural features of ILL were compared with the corresponding milled wood lignin (MWL). The amounts of phenolic hydroxyl groups (Phe-OH) was determined to 10.0% for ILL and 7.2% for MWL, respectively, where those of methoxyl groups (OMe) were 4.9% for ILL and 11.0% for MWL, respectively. The weight average molecular weight (Mw) of ILL (3,995) were determined to ca. 1/2 of that of MWL (8,438) and polydispersity index (PDI: Mw/Mn) suggested that the lignin fragments were more uniform in the ILL (PDI 1.36) than in the MWL (PDI 2.64). The temperature (Tm) corresponding to maximum decomposition rate (Vm) of ILL ($306.6^{\circ}C$) was ca. $35^{\circ}C$ lower than that of MWL ($341.9^{\circ}C$), suggesting that ILL was thermally unstable than MWL, as evidence from the lower Tm for ILL. Moreover, the structural characteristics of ILL and MWL were confirmed by spectroscopic analyses (FT-IR and $^{13}C$-NMR), and these results indicated ionic liquid (1-ethyl-3-methylimidazolium acetate) was chemically or physically bound to ILL.
U, Chang-Ho;Kim, Yeong-Lee;An, Cheol-Hyeon;Kim, Dong-Chan;Gong, Bo-Hyeon;Bae, Yeong-Suk;Seo, Dong-Gyu;Jo, Hyeong-Gyun
Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
/
2009.11a
/
pp.5-5
/
2009
Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.
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