• Title/Summary/Keyword: Uniform Temperature

Search Result 1,827, Processing Time 0.032 seconds

Fabrication of SmBCO superconducting coated conductor using 100m class batch-type co-evaporation method (100m 급 batch-type co-evaporation 증착장치를 이용한 SmBCO 초전도테이프 제조)

  • Kim, H.S.;Oh, S.S.;Ha, H.S.;Yang, J.S.;Kim, T.H.;Lee, N.J.;Jeong, Y.H.;Ko, R.K.;Song, K.J.;Ha, D.W.;Youm, D.J.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2006.11a
    • /
    • pp.24-25
    • /
    • 2006
  • SmBCO coated conductors were successfully fabricated using EDDC (Evaporation using Drum in Dual Chambers) deposition system that is a bath type co-evaporation system for fabrication of superconducting tape and divided into two chambers named evaporation chamber and reaction chamber. To obtain long and high quality superconducting coated conductor, it is very important to secure the uniformity of all the deposition parameters m the deposition system such as deposition temperature, oxygen partial pressure, compositional ratios and so on. Therefore, we investigated the distribution of the parameters along the axis of the drum m EDDC on which tapes were wound helically. When the temperature on the middle point of deposition zone was $700^{\circ}C$, that on the edge of deposition zone was $675^{\circ}C$. When the thickness of SmBCO layer on the middle point of deposition zone was 1063 nm, that on the edge of deposition zone was 899 nm. The partial pressure of oxygen was 5 mTorr in the reaction chamber while that was $7{\times}10^{-5}$Torr in the evaporation chamber. The composition ratio of Sm:Ba:Cu, that was measured by EDX, was very uniform along the axis of the drum. Under these deposition conditions, critical current distribution along the drum axis was 175 A/cm, 190A/cm, 217.5 A/cm, 182.5 A/cm, 175 A/cm with the interval of 9 cm between samples. It means that the EDDC system has the potential of fabricating (100m, 200A) class coated conductor.

  • PDF

BCTZ Addition on the Microstructure, Piezoelectric/Dielectric Properties and Phase Transition of NKLN-AS Piezoelectric Ceramics (BCTZ첨가가 NKLN-AS계 압전세라믹스의 미세구조와 압전/유전특성 및 상전이현상에 미치는 효과)

  • Lee, Woong-Jae;Ur, Soon-Chul;Lee, Young-Geun;Yoon, Man-Soon
    • Korean Journal of Materials Research
    • /
    • v.22 no.1
    • /
    • pp.35-41
    • /
    • 2012
  • Presently, the most promising family of lead-free piezoelectric ceramics is based on $K_{0.5}Na_{0.5}NbO_3$(KNN). Lithium, silver and antimony co-doped KNN ceramics show high piezoelectric properties at room temperature, but often suffer from abnormal grain growth. In the present work, the $(Ba_{0.85}Ca_{0.15})(Ti_{0.88}Zr_{0.12})O_3$ component, which has relaxor ferroelectric characteristics, was doped to suppress the abnormal grain growth. To investigate this effect, Lead-Free $0.95(K_{0.5}Na_{0.5})_{0.95}Li_{0.05}NbO_3-(0.05-x)AgSbO_3-x(Ba_{0.85}Ca_{0.15})(Ti_{0.88}Zr_{0.12})O_3$[KNLN-AS-xBCTZ] piezoelectric ceramics were synthesized by ball mill and nanosized-milling processes in lead-Free $0.95(K_{0.5}Na_{0.5})_{0.95}Li_{0.05}NbO_3-(0.05-x)AgSbO_3$ in order to suppress the abnormal grain growth. The nanosized milling process of calcined powders enhanced the sintering density. The phase structure, microstructure, and ferroelectric and piezoelectric properties of the KNLN-AS ceramics were systematically investigated. XRD patterns for the doped and undoped samples showed perovskite phase while tetragonality was increased with increasing BCZT content, which increase was closely related to the decrease of TO-T. Dense and uniform microstructures were observed for all of the doped BCZT ceramics. After the addition of BCTZ, the tetragonal-cubic and orthorhombic-tetragonal phase transitions shifted to lower temperatures compared to those for the pure KNNL-AS. A coexistence of the orthorhombic and tetragonal phases was hence formed in the ceramics with x = 0.02 mol at room temperature, leading to a significant enhancement of the piezoelectric properties. For the composition with x = 0.02 mol, the piezoelectric properties showed optimum values of: $d_{33}$ = 185 pC/N, $k_P$ = 41%, $T_C=325^{\circ}C$, $T_{O-T}=-4^{\circ}C$.

Numerical Study on Freezing and Thawing Process in Modular Road System (모듈러 도로시스템의 동결-융해에 대한 수치해석적 연구)

  • Shin, Hosung;Kim, Jinwook;Lee, Jangguen;Kim, Dong-Gyou
    • Journal of the Korean Geotechnical Society
    • /
    • v.33 no.3
    • /
    • pp.49-62
    • /
    • 2017
  • In order to understand response of geo-structures to the freezing-thawing process in the ground, it is necessary to consider phase change of the pore water of the ground and also to understand soil interaction with structures. In this study, numerical analysis was carried out for freezing and thawing effect on the modular road system. Neumann's theoretical equation for freezing-thawing processes in porous media can be used to estimate frozen depth and heaving from basic soil properties and ground and surface temperature, but its application is limited to the case for the sediment with fully saturated condition and zero unfrozen water content. Numerical analysis of the modular road system was performed on various soil types and different ground water table as the varying freezing index. The amount of heaving in the silty soil was much larger than those in granite weathered soil or sandy soil, and lowering groundwater level reduced ground heaving induced by freezing. Numerical analysis for temperature history of the ground surface predicted residual heaving near the surface by the freeze-thaw process in silty soil. It ought to reduce stiffness and bearing capacity of the ground so that it will impair stability and serviceability of new road system. However, the amount of residual heaving was insignificant for the road system installed in weathered soil granite and sandy soil. Since modular road system is a pavement structure mounted on the supporting substructure unlike the prevalent road pavement system, strict criteria should be applied for uniform and differential settlement of the pavement system.

Laser crystallization in active-matrix display backplane manufacturing

  • Turk, Brandon A.;Herbst, Ludolf;Simon, Frank;Fechner, Burkhard;Paetzel, Rainer
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2008.10a
    • /
    • pp.1261-1262
    • /
    • 2008
  • Laser-based crystallization techniques are ideally-suited for forming high-quality crystalline Si films on active-matrix display backplanes, because the highly-localized energy deposition allows for transformation of the as-deposited a-Si without damaging high-temperature-intolerant glass and plastic substrates. However, certain significant and non-trivial attributes must be satisfied for a particular method and implementation to be considered manufacturing-worthy. The crystallization process step must yield a Si microstructure that permits fabrication of thin-film transistors with sufficient uniformity and performance for the intended application and, the realization and implementation of the method must meet specific requirements of viability, robustness and economy in order to be accepted in mass production environments. In recent years, Low Temperature Polycrystalline Silicon (LTPS) has demonstrated its advantages through successful implementation in the application spaces that include highly-integrated active-matrix liquid-crystal displays (AMLCDs), cost competitive AMLCDs, and most recently, active-matrix organic light-emitting diode displays (AMOLEDs). In the mobile display market segment, LTPS continues to gain market share, as consumers demand mobile devices with higher display performance, longer battery life and reduced form factor. LTPS-based mobile displays have clearly demonstrated significant advantages in this regard. While the benefits of LTPS for mobile phones are well recognized, other mobile electronic applications such as portable multimedia players, tablet computers, ultra-mobile personal computers and notebook computers also stand to benefit from the performance and potential cost advantages offered by LTPS. Recently, significant efforts have been made to enable robust and cost-effective LTPS backplane manufacturing for AMOLED displays. The majority of the technical focus has been placed on ensuring the formation of extremely uniform poly-Si films. Although current commercially available AMOLED displays are aimed primarily at mobile applications, it is expected that continued development of the technology will soon lead to larger display sizes. Since LTPS backplanes are essentially required for AMOLED displays, LTPS manufacturing technology must be ready to scale the high degree of uniformity beyond the small and medium displays sizes. It is imperative for the manufacturers of LTPS crystallization equipment to ensure that the widespread adoption of the technology is not hindered by limitations of performance, uniformity or display size. In our presentation, we plan to present the state of the art in light sources and beam delivery systems used in high-volume manufacturing laser crystallization equipment. We will show that excimer-laser-based crystallization technologies are currently meeting the stringent requirements of AMOLED display fabrication, and are well positioned to meet the future demands for manufacturing these displays as well.

  • PDF

The effects of the microstructure of the feed rod of $SrTiO_{3}$ on the melting stability ($SrTiO_{3}$ 원료봉의 미세구조가 용융대 안정에 미치는 영향)

  • Cho, Hyun;Shim, Kwang-Bo;Auh, Keun-Ho
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.6 no.2
    • /
    • pp.247-253
    • /
    • 1996
  • Microscopic analysis has been performed in order to investigate effects of the microstructure of the starting feed rods on the morphology of the S-L interface and the stability of the molten zone during single crystal growth of $SrTiO_{3}$ using a floating zone method. Undoped and $Fe_{2}O_{3}$ doped $SrTiO_{3}$ doped $SrTiO_{3}$ specimens, sintered at the different temperatures have been used. In the case of the feed rods sintered at the lower temperature($1400^{\circ}C$), the poor densification made the stability of the molten zone difficult to maintain. The feed rods sintered at the higher temperature ($1600^{\circ}C$) exhibited the higher density but their molten zone was difficult to maintain due to the presence of the abnormally grown grains. It is concluded that the uniform grain size distribution of the feed rod is the critical factor to maintain the stable molten zone and therefore to give optimum growth condition during FZ single crystal growth.

  • PDF

Hydropriming Seed Treatment Improve Germinability of Cucumber (오이종자의 발아성 증진을 위한 Hydropriming 효과)

  • Kang, Jum-Soon
    • Journal of Bio-Environment Control
    • /
    • v.12 no.4
    • /
    • pp.228-234
    • /
    • 2003
  • Various hydration treatments have been devised to improve the rate and univormity of seed germination as well as seed viability. Hydropriming and priming, the imbibitaion of seeds in distilled water and osmotic solutions, respectively, are useful techniques for early establishment of uniform seedlings. In this study, the optimum conditions were determined for hysropriming of cucumber seeds. Effects of hydropriming were also compared to those of osmotic priming. Seeds, hydroprimed with distilled water and primed with 50 mM $NaNO_3$at 20 for 24 hour, showd shorter number of days required to reach 50% of the final germination percentage ($T_{50}$), and mean number of days to germinate (MDG) that those untreated seeds. Hydroprimed with 10 mL distilled water showed better results in improving the rate of germination thatn other treatments tested. Hydropriming of the aged seeds improved germination percentage at 15$^{\circ}C$ and 25$^{\circ}C$. The $T_{50}$ and MDG values were reduced significantly by hydropriming of the aged seeds regardless of germination temperature. In addition to being simple and inexpensive, the hydropriming resulted in early germination at low temperature. he hydropriming was also effective in increase of germination percentage and normal seedlings.

Application of CFD Simulation to Cooling System Design of Agricultural Products Processing Center Workplace (농산물산지유통센터 작업장의 냉방 설계를 위한 CFD 시뮬레이션 적용)

  • Kwon, Jin-Kyung;Lee, Sung-Hyun;Moon, Jong-Pil;Lee, Su-Jang;Kim, Keyong-Won
    • Journal of Bio-Environment Control
    • /
    • v.19 no.4
    • /
    • pp.195-202
    • /
    • 2010
  • Cooling air-conditioning of APC (Agricultural Products processing Center) workplace is important to improve the working environment in the summer season. As existing cooling systems for air-conditioning of whole workplace are inefficient because of their high equipment operating costs, relatively inexpensive cooling system is required. The objectives of this study were to simulate the thermal flow fields in APC workplace having the positive and negative pressure type fan and pad systems and spot cooling system by using CFD software (FLUENT, 6.2) and estimate the cooling effectiveness of respective cooling systems. The results showed that the negative pressure type fan and pad system was inappropriate for the present APC workplace because of excessive outside air influx from open gateway and the positive pressure type fan and pad system created relatively low temperature field but non-uniform velocity field at worker positions. The spot cooling system could supply cool air to worker positions with relatively constant air velocity and temperature.

Electrical Characteristic of IGZO Oxide TFTs with 3 Layer Gate Insulator

  • Lim, Sang Chul;Koo, Jae Bon;Park, Chan Woo;Jung, Soon-Won;Na, Bock Soon;Lee, Sang Seok;Cho, Kyoung Ik;Chu, Hye Yong
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2014.02a
    • /
    • pp.344-344
    • /
    • 2014
  • Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

  • PDF

Indepth Study of Numerical Heat Transfer and Fluid Flow for Energy Saving of Greenhouse (시설하우스 에너지 절감을 위한 열유동 수치 해석 심층 연구)

  • Shin, Mi-Soo;Kim, Hey-Suk;Choi, Jun-Ho;Jang, Dong-Soon
    • Journal of Korean Society of Environmental Engineers
    • /
    • v.29 no.4
    • /
    • pp.466-471
    • /
    • 2007
  • The purpose of study is to obtain basic but important information for the operation of the greenhouse facility located in the suburb of town. Special emphasis is given on the aspect of energy saving method, which can be easilyapplicable in a practical sense. For this end numerical calculation has been made systematically in order to increase the energy efficiency by the evaluation of the temperature distribution in greenhouse. Major parameters considered are primarily the overall shape of greenhouse together with the various conditions of baffle installion inside greenhouse. Further, the performance of heating system is also carefully compared each other for a number of typical arrangements of heating duct. The performance of the computer program developed in this study is evaluated by the observation of the famous fluid trapping phenomenon occurred in staggered baffle condition in the enclosure of greenhouse. Based on the this study, a number of useful conclusions can be drawn, that is, the installation of baffles are quite effective in energy saving method with a minor modification of facility. Also, it is found that the change of the heating duct system can contribute significantly to the uniform temperature distribution in greenhouse. Further other findings obtained by numerical calculation were not only physically consistent and meaningful but also useful for the determination of optimum condition of practical operation of greenhouse.

The Analysis of Elasto-Plastic Thermal Stresses for Welding Part in Double Capstan Drum (더블 캡스턴 드럼의 용접부에 대한 탄소성 열응력해석)

  • 김옥삼
    • Journal of the Korean Society of Fisheries and Ocean Technology
    • /
    • v.36 no.4
    • /
    • pp.329-336
    • /
    • 2000
  • Welding is a important technological method in mechanical engineering. $CO_2$MAG(metal active gas) welding means that metal part in double capstan drum for the inshore and costal vessels are joined by melting(with or without a filler material) or that new material is added to a metal part by melting. The thermal stresses appear due to a non-uniform temperature field, inhomogeneous material properties, external restraint and volume changes during phase transformations. In this study analysis the elasto-plastic thermal stresses distribution of welding part in double capstan drum for the inshore and costal vessels using finite element method (FBM). Therefore it calculates the numerical value that can be applied to the optimum design of welding parts and the shapes. The significant results obtained in this study are summarized as fellows. At early stage of the cooling after welding process, the abrupt thermal stresses gradient has been shown in the vicinity of welding part. In the thermal stresses analysis due to temperature gradient and heat shocking maximum stress was occurred of welding part and stresses were distributed from 54MPa~48MPa.

  • PDF