• Title/Summary/Keyword: Uniform Temperature

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Silicon Nitride Layer Deposited at Low Temperature for Multicrystalline Solar Cell Application

  • Karunagaran, B.;Yoo, J.S.;Kim, D.Y.;Kim, Kyung-Hae;Dhungel, S.K.;Mangalaraj, D.;Yi, Jun-Sin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.11a
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    • pp.276-279
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    • 2004
  • Plasma enhanced chemical vapor deposition (PECVD) of silicon nitride (SiN) is a proven technique for obtaining layers that meet the needs of surface passivation and anti-reflection coating. In addition, the deposition process appears to provoke bulk passivation as well due to diffusion of atomic hydrogen. This bulk passivation is an important advantage of PECVD deposition when compared to the conventional CVD techniques. A further advantage of PECVD is that the process takes place at a relatively low temperature of 300t, keeping the total thermal budget of the cell processing to a minimum. In this work SiN deposition was performed using a horizontal PECVD reactor system consisting of a long horizontal quartz tube that was radiantly heated. Special and long rectangular graphite plates served as both the electrodes to establish the plasma and holders of the wafers. The electrode configuration was designed to provide a uniform plasma environment for each wafer and to ensure the film uniformity. These horizontally oriented graphite electrodes were stacked parallel to one another, side by side, with alternating plates serving as power and ground electrodes for the RF power supply. The plasma was formed in the space between each pair of plates. Also this paper deals with the fabrication of multicrystalline silicon solar cells with PECVD SiN layers combined with high-throughput screen printing and RTP firing. Using this sequence we were able to obtain solar cells with an efficiency of 14% for polished multi crystalline Si wafers of size 125 m square.

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Effects of Manganese Precursors on MnOx/TiO2 for Low-Temperature SCR of NOx (NOx제거용 MnOx-TiO2 계 저온형SCR 촉매의 Mn전구체에 따른 영향)

  • Kim, Janghoon;Shin, Byeong kil;Yoon, Sang hyeon;Lee, Hee soo;Lim, Hyung mi;Jeong, Yongkeun
    • Korean Journal of Metals and Materials
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    • v.50 no.3
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    • pp.201-205
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    • 2012
  • The effects of various manganese precursors for the low-temperature selective catalytic reduction (SCR) of $NO_x$ were investigated in terms of structural, morphological, and physico-chemical analyses. $MnO_x/TiO_2$ catalysts were prepared from three different precursors, manganese nitrate, manganese acetate(II), and manganese acetate(III), by the sol-gel method. The manganese acetate(III)-$MnO_x/TiO_2$ catalyst tended to suppress the phase transition from the anatase structure to the rutile or the brookite after calcination at $500^{\circ}C$ for 2 h. It also had a high specific surface area, which was caused by a smaller particle size and more uniform distribution than the others. The change of catalytic acid sites was confirmed by Raman and FT-IR spectroscopy and the manganese acetate(III)-$MnO_x/TiO_2$ had the strongest Lewis acid sites among them. The highest de-NOx efficiency and structural stability were achieved by using the manganese cetate(III) as a precursor, because of its high specific surface area, a large amount of anatase $TiO_2$, and the strong catalytic acidity.

A Study of Thin Film deposition using of RF Magnetron Sputtering (RF 마그네트론 스퍼터링을 이용한 박막 증착에 관한 연구)

  • Lee, Woo Sik
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.11 no.6
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    • pp.772-777
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    • 2018
  • This paper used RF Magnetron Sputtering to deposition n-type and p-type to ITO glass. The N-type ohmic contact worked well under all conditions. Sheet resistance has been shown to increase sheet resistance as RF Power increases. After analyzing the surface of the deposited thin film, in the condition that RF Power was 250W and substrate temperature was $250^{\circ}C$, particles were measured to have a uniform and consistent thin film. P-type has good ohmic contact under all conditions and sheet resistance has been shown to increase as RF Power increases. As the RF Power grew, thickness increased and stabilized. PN junction thin film and NP junction thin film showed increased thickness and stabilized as sputtering time increased. As a result of thin film, conversion efficiency was at 0.2 when sputtering time was 10 minutes.

Evaluation of Thermal Conductivity of Porous TiO2-SiO2-Base Thermal Insulation (다공성 TiO2-SiO2 복합 단열재의 열전도율 평가)

  • Choi, Byugchul;Kim, Jon-Ho;Kim, Jon Beom;Jung, Woonam;Lee, Sang-Hyun
    • Journal of Institute of Convergence Technology
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    • v.8 no.1
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    • pp.21-25
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    • 2018
  • We developed nano-porous $TiO_2-SiO_2$ composites (commercial name : PTI, porous titania insulator) with low thermal conductivity as thermal insulating material as well as function of photocatalyst. The objectives of this paper are, firstly, to evaluate of the thermal conductivity of the PTI powder in the temperature range from -160 to $250^{\circ}C$, secondly to evaluate of thermal conductivities of insulation materials that is applied PTI powder. The structure of the PTI powder that has the pores size of 20-30 nm and the particle diameter of 2-10 nm. The PTI had a high surface area of $400m^2/g$ and a mean pore size of $45{\AA}$, which was fairly uniform. The thermal conductivity was measured by GHP(guarded hot plate) method and HFM(heat flux method). The PTI structure is a three-dimensional network nano-structures composed by a pearl-necklace that involved a precious stone in the center of the necklace. The thermal conductivities of PTI-PX powder by the GHP and HFM were 0.0366 W/m.K, 0.0314 W/m.K at $20^{\circ}C$, respectively. This is similar to values that are proportional to the square of the absolute temperature of the thermal conductivity of static air. The thermal conductivities of insulating sheets coated with PTI powder were similar results with that of the PTI powder.

Thermo-mechanical vibration analysis of curved imperfect nano-beams based on nonlocal strain gradient theory

  • Ebrahimi, Farzad;Daman, Mohsen;Mahesh, Vinyas
    • Advances in nano research
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    • v.7 no.4
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    • pp.249-263
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    • 2019
  • In the current paper, an exact solution method is carried out for analyzing the thermo-mechanical vibration of curved FG nano-beams subjected to uniform thermal environmental conditions, by considering porosity distribution via nonlocal strain gradient beam theory for the first time. Nonlocal strain gradient elasticity theory is adopted to consider the size effects in which the stress for not only the nonlocal stress field but also the strain gradients stress field is considered. It is perceived that during manufacturing of functionally graded materials (FGMs) porosities and micro-voids can be occurred inside the material. Material properties of curved porous FG nanobeam are assumed to be temperature-dependent and are supposed to vary through the thickness direction of beam which modeled via modified power-law rule. Since variation of pores along the thickness direction influences the mechanical and physical properties, porosity play a key role in the mechanical response of curved FG nano-structures. The governing equations and related boundary condition of curved porous FG nanobeam under temperature field are derived via the energy method based on Timoshenko beam theory. An analytical Navier solution procedure is utilized to achieve the natural frequencies of porous FG curved nanobeam supposed to thermal loading. The results for simpler states are confirmed with known data in the literature. The effects of various parameters such as nonlocality parameter, porosity volume fractions, thermal effect, gradient index, opening angle and aspect ratio on the natural frequency of curved FG porous nanobeam are successfully discussed. It is concluded that these parameters play key roles on the dynamic behavior of porous FG curved nanobeam. Presented numerical results can serve as benchmarks for future analyses of curve FG nanobeam with porosity phases.

Fast liquid crystal switching performance on indium zinc oxide films with low curing temperature via ion-beam irradiation (이온빔 조사된 저온 소성 인듐 아연 산화막을 이용한 액정의 고속 스위칭 특성 연구)

  • Oh, Byeong-Yun
    • Journal of IKEEE
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    • v.23 no.3
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    • pp.904-909
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    • 2019
  • Using the ion-beam irradiated indium zinc oxide (IZO) films which was cured at $100^{\circ}C$, uniform LC and homogeneous alignment of liquid crystal (LC) molecules was achieved. The IZO film was deposited on the glass substrate at the curing temperature of $100^{\circ}C$ and irradiated by the ion-beam which is an LC alignment method. To verify the LC alignment characteristics, polarizing optical microscope and the crystal rotation method were used. Additionally, it was confirmed that the LC cell with the IZO films had an enough thermal budget for high-quality LC applications. Field emission scanning electron microscope was conducted as a surface analysis to evaluate the effect of the ion-beam irradiation on the IZO films. Through this, it was revealed that the ion-beam irradiation induced rough surface with anisotropic characteristics. Finally, electro-optical (EO) performances of the twisted-nematic cells with the IZO films were collected and it was confirmed that this cell had better EO performances than the conventional rubbed polyimide. Furthermore, the polar anchoring energy was measured and a suitable value for stable LC device operation was achieved.

Nanostructuring the Polyimide Alignment Layer and Uniform Liquid Crystal Alignment by Solvent Assisted Micromolding (Solvent Assisted Micromolding을 이용한 Polyimide 나노구조 형성 및 이를 통한 균일 액정 배향)

  • Kim, Jongbok
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.12 no.1
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    • pp.72-77
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    • 2019
  • The display that provides information to us through the visual sense is a very important information transmission means by intuitively transmitting information, and the liquid crystal display (LCD) is the most widely used information transmission display. In this paper, we studied solvent assisted micromolding as an alternative for the rubbing that is essential to align the liquid crystals in LCD and successfully aligned the liquid crystal molecules by constructing the nanostructures on conventional polyimide alignment layer. When generating the nanostructures on the polyimide film, there was a competitive correlation between the dissolution effect of the polymer by the solvent and the capillary effect of the polyimide molecules into the nanostructures of the mold depending on the process temperature. It was possible to form nanostructures with high step by deriving the optimum temperature. These nanostructures were able to align the liquid crystal molecules uniformly and demonstrated that they could form a desirable pretilt angle.

Influences of heating processes on properties and microstructure of porous CeO2 beads as a surrogate for nuclear fuels fabricated by a microfluidic sol-gel process

  • Song, Tong;Guo, Lin;Chen, Ming;Chang, Zhen-Qi
    • Nuclear Engineering and Technology
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    • v.51 no.1
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    • pp.257-262
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    • 2019
  • The control of microstructure is critical for the porous fuel particles used for infiltrating actinide nuclides. This study concerns the effect of heating processes on properties and microstructure of the fuel particles. The uniform gel precursor beads were synthesized by a microfluidic sol-gel process and then the porous $CeO_2$ microspheres, as a surrogate for the ceramic nuclear fuel particles, were obtained by heating treatment of the gel precursors. The fabricated $CeO_2$ microspheres have a narrow size distribution and good sphericity due to the feature of microfluidics. The effects of heating processes parameters, such as heating mode and peak temperatures on the properties of microspheres were studied in detail. An optimized heating mode and the peak temperature of $650^{\circ}C$ were selected to produce porous $CeO_2$ microspheres. The optimized heating mode can avoid the appearance of broken or crack microspheres in the heating process, and as-prepared porous microspheres were of suitable pore size distribution and pore volume for loading minor actinide (MA) solution by an infiltration method that is used for fabrication of MA-bearing nuclear fuel beads. After the infiltration process, $1000^{\circ}C$ was selected as the final temperature to improve the compressive strength of microspheres.

Low-dimensional modelling of n-type doped silicene and its carrier transport properties for nanoelectronic applications

  • Chuan, M.W.;Lau, J.Y.;Wong, K.L.;Hamzah, A.;Alias, N.E.;Lim, C.S.;Tan, M.L.P
    • Advances in nano research
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    • v.10 no.5
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    • pp.415-422
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    • 2021
  • Silicene, a 2D allotrope of silicon, is predicted to be a potential material for future transistor that might be compatible with present silicon fabrication technology. Similar to graphene, silicene exhibits the honeycomb lattice structure. Consequently, silicene is a semimetallic material, preventing its application as a field-effect transistor. Therefore, this work proposes the uniform doping bandgap engineering technique to obtain the n-type silicene nanosheet. By applying nearest neighbour tight-binding approach and parabolic band assumption, the analytical modelling equations for band structure, density of states, electrons and holes concentrations, intrinsic electrons velocity, and ideal ballistic current transport characteristics are computed. All simulations are done by using MATLAB. The results show that a bandgap of 0.66 eV has been induced in uniformly doped silicene with phosphorus (PSi3NW) in the zigzag direction. Moreover, the relationships between intrinsic velocity to different temperatures and carrier concentration are further studied in this paper. The results show that the ballistic carrier velocity of PSi3NW is independent on temperature within the degenerate regime. In addition, an ideal room temperature subthreshold swing of 60 mV/dec is extracted from ballistic current-voltage transfer characteristics. In conclusion, the PSi3NW is a potential nanomaterial for future electronics applications, particularly in the digital switching applications.

Property and Microstructure Evaluation of Pd-inserted Nickel Monosilicides (Pd 삽입 니켈모노실리사이드의 물성과 미세구조 변화)

  • Yoon, Kijeong;Song, Ohsung
    • Korean Journal of Metals and Materials
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    • v.46 no.2
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    • pp.69-79
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    • 2008
  • A composition consisting of 10 nm-Ni/1 nm-Pd/(30 nm or 70 nm-poly)Si was thermally annealed using rapid thermal for 40 seconds at $300{\sim}1100^{\circ}C$ to improve the thermal stability of conventional nickel monosilicide. The annealed bilayer structure developed into $Ni(Pd)Si_x$, and the resulting changes in sheet resistance, microstructure, phase, chemical composition, and surface roughness were investigated. The silicide, which formed on single crystal silicon, could defer the transformation of $NiSi_2$, and was stable at temperatures up to $1100^{\circ}C$. It remained unchanged on polysilicon substrate compared with the sheet resistance of conventional nickel silicide. The silicides annealed at $700^{\circ}C$, formed on single crystal silicon and 30 nm polysilicon substrates exhibited 30 nm-thick uniform silicide layers. However, silicide annealed at $1,000^{\circ}C$ showed preferred and agglomerated phase. The high resistance was due to the agglomerated and mixed microstructures. Through X-ray diffraction analysis, the silicide formed on single crystal silicon and 30 nm polysilicon substrate, showed NiSi phase on the entire temperature range and mixed phases of NiSi and $NiSi_2$ on 70 nm polysilicon substrate. Through scanning probe microscope (SPM) analysis, we confirmed that the surface roughness increased abruptly until 36 nm on 30 nm polysilicon substrate while not changed on single crystal and 70 nm polysilicon substrates. The Pd-inserted nickel monosilicide could maintain low resistance in a wide temperature range and is considered suitable for nano-thick silicide processing.