• Title/Summary/Keyword: Uniform Film

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On the Surface Defect Analysis of an Aluminum Tube for an OPC Drum using n SEM and EDX (SEM/EDX를 이용한 OPC 드럼용 Al 튜브의 표면결함 분석에 관한 연구)

  • Kim, Chung-Kyun
    • Tribology and Lubricants
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    • v.23 no.4
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    • pp.143-148
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    • 2007
  • The surface defects of an aluminum tube for an OPC drum have been analyzed using a scanning microscopy(SEM) and an energy dispersive X-ray analyze.(EDX). The SEM/EDX system, which may provide good information on the surface defects and their distributions, provides an optical diameter of an impurity and a chemical composition. These are strongly related on the coated film thickness and quality of an OPC drum, which is a key element of a toner cartridge for a laser printer. The experimental results show that the local deformations, scratch wear, and flaws are produce the non-uniform coating layers, which may be removed by a manufacturing process of an aluminum tube. The major parameters on the coating quality of an OPC drum are the impurities of an aluminum tube such as silicon, oxygen, calcium, carbon, sulphur, chlorine, and others. These impurities may be removed by an ingot molding, extrusion and drawing, quality control, and packing processes with a strict manufacturing technology.

Surface characteristics of Molybdenum Oxide Films Prepared by Oxidation Thermal Treatment Method (산화 열처리법에 의해 제작된 산화 몰리브데늄 박막의 표면특성 고찰)

  • Kim, Sang-Gon;Sung, Youl-Moon
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.28 no.3
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    • pp.57-62
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    • 2014
  • In this work, molybdenum oxide films were fabricated by heat-treatment method. Fundamental surface characteristics of molybdenum oxide films were investigated using XRD and Raman spectroscopy. From the results, the optimum MoOx films could be obtained under the conditions of thermal treatment temperature of $550^{\circ}C$, oxidation time of 30 minutes and oxygen flow rate of 250sccm. The thermal treatment method offers a simple and effective route for the synthesis of uniform $MoO_3$ films.

Characteristics of pentacene transistor using Organic Flow Deposition (OFD) equipment

  • Jung, Ki-Taek;An, Young-Ung;Ji, Jong-Yeoul;Choi, Jun-Young;Lee, Young-Jong;Han, Seung-Hoon;Jang, Jin
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08b
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    • pp.1611-1614
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    • 2007
  • This paper is concerned on design of organic flow deposition system and development of the deposition process for pentacene thin film by OFD and on electrical characteristics of pentacene films deposited by it. OFD will overcome vacuum thermal evaporator's limits and it will provide a large-scale mass, uniform and good electrical performance.

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Glass Film and Glass/Silicon Interface Properties by Firing Profiles (소성공정에 의한 유리막과 Glass/Silicon 계면특성)

  • Yoon, Se-Wook;Huh, Chang-Su
    • Proceedings of the KIEE Conference
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    • 1998.11c
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    • pp.729-731
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    • 1998
  • Surface passivation using glass powders results in good reliability for high voltage silicon power devices. In this paper, Zinc borosilicate glass was prepared for the purpose of passivating, and a deposition technique of glass films on the silicon surface by electrophoresis in which acetone is used as a suspension medium and a measurement technique of C-V curve has been investigated. Properties were compared using SEM, XRD, C-V Curve as a function of firing condition, temperature and atmosphere were investigated. Under 100V applied, 1 minute, $700^{\circ}C$ firing temperature, and $O_2$ atmosphere, I can get the fine films $5.8{\mu}m$ thickness with Zinc borosilicate glass. As a result of investigation of glass films, it has been found that pre-firing and annealing play an important role to achieve uniform, fine, reliable glass deposition films and Glass/Silicon interlace.

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알루미나 나노 다공성 박막공정용 전기화학 양극산화 장치의 제작

  • Choe, Jae-Ho;Baek, Ha-Bong;Kim, Geun-Ju
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2007.06a
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    • pp.230-233
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    • 2007
  • A system of anodic process of aluminum thin film has implemented for nanofabrication. The manufactured equipment consists of three main parts: chiller, reaction bath and power supply. The chiller module consists of refrigeration compressor, copper tube and coolant with a thermostat. The reaction bath has kept in same temperature as a thermodynamic canonical ensemble system during the anodic reaction process. The magnetic bar has stirred oxalic acid in bath for uniform reaction. The DC power supply has applied into two electrodes, aluminum for anode and platinum for cathode in the oxalic acid. The anodization process results in the formation of nanoporous thin films.

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Ferroelectric P(VDF/TrFE) Copolymers in Low-Cost Non-Volatile Data Storage Applications

  • Prabu A. Anand;Lee, Jong-Soon;Chang You-Min;Kim, Kap-Jin
    • Proceedings of the Polymer Society of Korea Conference
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    • 2006.10a
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    • pp.237-237
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    • 2006
  • P(VDF/TrFE(72/28) ultrathin films were used in the fabrication of Metal-Ferroelectric polymer-Metal (MFM) single bit device with special emphasis on uniform film surface, faster dipole switching time under applied external field and longer memory retention time. AFM and FTIR-GIRAS were complementary in analyzing surface crystalline morphology and the resultant change in chain orientation with varying thermal history. DC-EFM technique was used to 'write-read-erase' the data on the memory bit in a much faster time than P-E studies. The results obtained from this study will enable us to have a good understanding of the ferroelectric and piezoelectric behavior of P(VDF/TrFE)(72/28) thin films suitable for high density data storage applications.

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Fabrication of Polymer TFT Arrays on Plastic Substrates Using a Low Temperature Manufacturing Process

  • Kao, Chi-Jen;Wang, Yi-Kai;Peng, Yu-Rung;Yang, Tsung-Hua;Hu, Tarng-Shiang;Hou, Jack
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.1568-1570
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    • 2008
  • In this paper, fabrication of a $60{\times}48$ polymer TFT array with a top-gate structure on plastic substrates using a low temperature printing process will be presented and the device structure and manufacturing processes will be discussed. The polymer TFT array showed excellent air stability and uniform electrical characteristics over a large area. Finally, a 1.5 inch EPD display with 50 dpi resolution using the polymer TFT array will be demonstrated for e-film device applications.

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Generation of high field emission current from carbon nanotubes

  • Lim, Seong-Chu;Heong, Hee-Jin;Choi, Ha-Kyu;Song, Young-Il;Kim, Gil-Yong;Lee, Young-Hee
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1020-1022
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    • 2005
  • We have fabricated a high electron source from carbon nanotubes (CNTs) using hot-press method. Using hot-press method, we are able to control the tube density and the morphology of CNT films. We propose that the high emission current is due to the solid adhesion between the CNTs and substrates and uniform morphology of CNT film.

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Aligning Capabilities for Vatical-Alignment (VA) Liquid Crystal Display using AZO Film

  • Oh, Yong-Cheul
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.12
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    • pp.1144-1148
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    • 2006
  • We have investigated liquid crystal (LC) aligning capabilities and electro-optical (EO) characteristics of transparent electrodes as Al-doped ZnO (AZO) substituting indium tin oxide (ITO). The experiment results show that a uniform vertical LC alignment on AZO electrodes based on a rubbed polyimide (PI) surface were achieved. A high pretilt angle of about $88^{\circ}$ was obtained. EO performances of the VA cell on rubbed PI surfaces with AZO electrodes are almost the same as that of the VA cell with ITO electrodes. These results appeared that AZO electrodes as transparent electrodes of LCDs could substitute ITO electrodes.

Structural and Dielectric Properties of Sol-gel Derived BiFeO3/Pb(Zr,T)O3 Heterolayered Thin Films

  • Nam, Sung-Pill;Lee, Sung-Gap;Lee, Young-Hie
    • Transactions on Electrical and Electronic Materials
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    • v.11 no.5
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    • pp.212-215
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    • 2010
  • $BiFeO_3/Pb(Zr_{0.95}Ti_{0.05})O_3$ (BFO/PZT) heterolayered thin films were fabricated by the spin coating method on a Pt/Ti/$SiO_2$/Si substrate using metal alkoxide solutions. The coating and heating procedure was repeated 6 times to form the heterolayered films. The thickness of the BFO/PZT films after one cycle of drying/sintering is about 30-40 nm. All BFO/PZT films show a void free uniform grain structure without the presence of rosette structures. It can be assumed that the crystal growth of the upper BFO layers can be influenced by the lower PZT layers. As the number of coatings increased, the dielectric constant increased, so that the value for the 6-layer film was 1360 at 1 KHz.