• Journal of the Korean Ceramic Society
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• v.50 no.3
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• pp.226-230
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• 2013

We performed high pressure high temperature (HPHT) sintering for the 20 nm MgO powders at the temperatures from $600^{\circ}C$ to $1200^{\circ}C$ for only 5 min under 7 GPa pressure condition. To investigate the microstructure evolution and physical property change of the HPHT sintered MgO samples, we employed a scanning electron microscopy (SEM), density and Vickers hardness measurements. The SEM results showed that the grain size of the sintered MgO increased from 200 nm to $1.9{\mu}m$ as the sintering temperature increased. The density results showed that the sintered MgO achieved a more than 95% of the theoretical density in overall sintering temperature range. Based on Vickers hardness test, we confirmed that hardness increased as temperature increased. Our results implied that we might obtain the dense sintered MgO samples with an extremely short time and low temperature HPHT process compared to conventional electrical furnace sintering process.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.305-308
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• 2004

We present a novel process for the ultra low temperature (<150$^{\circ}C$) polycrystalline silicon (ULTPS) TFT for the flexible display applications on the plastic substrate. The sequential lateral solidification (SLS) was used for the crystallization of the amorphous silicon film deposited by rf magnetron sputtering, resulting in high mobility polycrystalline silicon (poly-Si) film. The gate dielectric was composed of thin $SiO_2$ formed by plasma oxidation and $Al_2O_3$ deposited by plasma enhanced atomic layer deposition. The breakdown field of gate dielectric on poly-Si film showed above 6.3 MV/cm. Laser activation reduced the source/drain resistance below 200 ${\Omega}$/ㅁ for n layer and 400 ${\Omega}$/ㅁ for p layer. The fabricated ULTPS TFT shows excellent performance with mobilities of 114 $cm^2$/Vs (nMOS) and 42 $cm^2$/Vs (pMOS), on/off current ratios of 4.20${\times}10^6$ (nMOS) and 5.7${\times}10^5$ (PMOS).

• Journal of electromagnetic engineering and science
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• v.10 no.3
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• pp.92-98
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• 2010

A new wideband bandstop filter(BSF) with a sharp roll-off characteristic is introduced in a stripline structure in this paper. The BSF consists of two sections: the first is two capacitively coupled $\lambda/4$ short-circuited lines with opposite ground positions, while the second is a capacitively coupled $\lambda/4$ short-circuited line. The BSF provides three transmission zeros within the stopband and better than 22 dB rejection over the whole wireless local area network (WLAN) band from 5.15 to 5.825 GHz. The BSF, cascaded to an U.S. ultra-wideband(UWB: 3.1~10.6 GHz) band-pass filter(BPF), is simulated with HFSS and realized with low-temperature co-fired ceramic(LTCC) green tape with a dielectric constant of 7.8. The measurement results agree well with the HFSS simulation results. The size of the UWB BPF including the BSF is $3{\times}6.3\times0.45\;mm^3$.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.1
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• pp.45-51
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• 2001

The effects of wettability and surface oxidation on the low temperature and ultra-fine solder bump formation have been studied. Difference sequences of near eutectic In-Ag and eutectic Bi-Sn solders were evaporated on Au/Cu/Cr or Au/Ni/Ti Under Bump Metallurgy (UBM) pads. Solder bumps were formed using lift-off method and were reflowed in Rapid Thermal Annealing (RTA) system. The solder bumps in which In was in contact with UBM in In-Ag solder and the solder bumps in which Sn was in contact with UBM in Bi-Sn solder showed better bump formability during reflow than other solder bumps. The ability to form spherical solder bumps was affected mainly by the wettability of solders to UBM pads.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.796-799
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• 2002

BSCCO thin films are fabricated via a co-deposition process at an ultra-low growth rate using ion beam sputtering. The sticking coefficient of Bi element exhibits a characteristic temperature dependence. This temperature dependence of the sticking coefficient was explained consistently on the basis of the evaporation and sublimation processes of Bi$_2$O$_3$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.1
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• pp.1-7
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• 2007

In this paper, two kinds of initial oxidation methods i.e., SLTO(Slow Low Temperature Oxidation: $700^{\circ}C$) and RTO(Rapid Thermal Oxidation: $850^{\circ}C$) are applied prior to the plasma nitridation for ultra thin oxide of RPNO (Remote Plasma Nitrided Oxide). It is observed that SLTO has superior characteristics to RTO such as lower SS(Sub-threshold Slope) and improved Ion-Ioff characteristics. Low frequency noise characteristics of SLTO also showed better than RTO both in linear and saturation regime. It is shown that flicker noise is dominated by carrier number fluctuation in the channel region. Therefore, SLTO is promising for nano-scale CMOS technology with ultra thin gate oxide.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1116-1118
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• 2005

We studied laser crystallization of amorphous silicon films prepared at ultra low temperatures ($<150^{\circ}C$). Amorphous silicon films having a low content of hydrogen were deposited by using catalytic chemical vapor deposition method. Influence of process parameters on the hydrogen content was investigated. Laser crystallization was performed dispensing with the preliminary dehydrogenation process. Crystallization took place at a laser energy density value as low as $70\;mJ/cm^2$, and the grain size increased with increasing the laser energy. The ELA crystallization of Catalytic CVD a-Si film is a promising candidate for Poly-Si TFT in active-matrix flexible display on plastic substrates.

• International Journal of Industrial Entomology and Biomaterials
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• v.47 no.2
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• pp.126-133
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• 2023

Genetic resources of mulberry trees are commonly preserved as trophosomes, which are vulnerable to environmental factors, such as natural disasters, diseases, and pests. This study establishes a basic protocol for ultra-low temperature cryopreservation of mulberry trees using a two-step freezing process. The procedure was established using the "Daeshim" variety and then tested on genetic resources from 24 other mulberry varieties. Samples were first dried to a moisture content of 33-43% in a low-temperature forced-air chamber at -5 ℃, then slowly frozen from -5 ℃ to -20 ℃, and preserved in liquid nitrogen (-196 ℃). To determine the regeneration rate, isolated dormant buds were inoculated into MS basal medium, and grown shoots were grafted onto 1-year-old rootstock via chip budding and then cultured. After freezing in liquid nitrogen, the "Daeshim" variety exhibited a survival and regeneration rate of more than 70% and 50%, respectively. Applying the two-step freezing process to genetic resources from 24 mulberry species yielded average survival and regeneration rates of 85.3% and 75.5%, respectively. Morus alba showed survival and regeneration rates of 100%, confirming the efficacy of the two-step freezing method. These results indicate the high feasibility of ultra-low-temperature cryopreservation through two-step freezing of dormant buds from mulberry genetic resources. Additional research is required into the variations in regeneration rates with freezing period in liquid nitrogen.

• Transactions of the Korean hydrogen and new energy society
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• v.24 no.2
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• pp.136-141
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• 2013

In order to achieve simultaneously the ultra-low NOx, the high power and the high efficiency in a hydrogen-fueled engine with SI and the external mixture, the effects of low temperature combustion, performance and exhaust are compared and analyzed by the application of the lean boosting. As the results, the decrease rate of the high temperature in the hydrogen is less decreased than the other fuels by high constant-volume specific heat. However, when the conditions of 1.7bar and ${\Phi}=0.33$ are reached by the lean boosting, the maximum gas temperature of hydrogen is decreased under the temperature of NOx formation and it is possible to stabilize combustion below 2% of COVimep. Also, at that condition, it is feasible to achieve simultaneously NOx-free and the power of gasoline level. Therefore, it is found that the lean boosting is useful in the hydrogen-fueled engine.

• Proceedings of the Korean Nuclear Society Conference
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• 1996.11b
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• pp.669-674
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• 1996

The theory of quantum mechanics states that for any system there are a set of discrete physical states, quantum states, which corresponds a particular energy level of the system. The lowest energy the system can have, corresponding to its ground state, is not necessarily zero, but depends only on the precise microscopic nature of the system under consideration. At the absolute zero of temperature all systems will be in their lowest energy state (zero point energy) and as the system is warmed from OK, the higher energy states become occupied. The probability of occupancy of the excited states relative to that of the ground state is proportional to the absolute temperature. Therefore we can obtain nuclear dipole and quadrupole moment very accurately at ultra low temperature (<15mk) by NMR and from the destruction of anisotropy. The former is called LTNO/NMR and the latter is called LTNO (Low Temperature Nuclear Orientation). In this paper we discuss and introduce only an experimental apparatus with results of cooling power test, a helium dilution refrigerator, which can reache 8mK, and an actual technique for the experiment, a theory and results will be presented in another papers.