• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.9
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• pp.600-605
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• 2014

The interest in development on luminaires which are available up to $-52^{\circ}C$ is surging as demands in vessels navigating a north pole route increase. A conventional incandescent lamp used in vessels is operated stably at $-52^{\circ}C$, but many countries including Korea have eliminated the use of incandescent lamps gradually because of its low luminous efficacy. In this paper, therefore, to develop the LED luminaires with high-efficiency, long lifetime that enables to substitute for incandescent lamp, it has studied about cryogenic characteristics of LED packages, bulbs, driving circuit and power supply. This experiments were carried out according to standards IEC 60945-8.4.1. Temperature range is from $-60^{\circ}C$ to $25^{\circ}C$, and the light output depending on ambient temperature. It showed that, based on $25^{\circ}C$, light output of a CFL decreased by 80% of CFL at $-20^{\circ}C$ while each increased 12% of LED bulbs and 16~19% of LED packages at $-60^{\circ}C$.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.2-6
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• 2000

We have developed an extremely sensitive radio frequency amplifier based on the dc superconducting quantum interference device (dc SQUID). Unlike a conventional semiconductor amplifier, a SQUID can be cooled to ultra-low temperatures (100 mK or less) and thus potentially achieve a much lower noise temperature. In a conventional SQUID amplifier, where the integrated input coil is operated as a lumped element, parasitic capacitance between the coil and the SQUID washer limits the frequency up to which a substantial gain can be achieved to a few hundred MHz. This problem can be circumvented by operating the input coil of the SQUID as a microstrip resonator: instead of connecting the input signal open. Such amplifiers have gains of 15 dB or more at frequencies up to 3 GHz. If required, the resonant frequency of the microstrip can be tuned by means of a varactor diode connected across the otherwise open end of the resonator. The noise temperature of microstrip SQUID amplifiers was measured to be between $0.5\;K\;{\pm}\;0.3\;K$ at a frequency of 80 MHz and $1.5\;K\;{\pm}\;1.2\;K$ at 1.7 GHz, when the SQUID was cooled to 4.2 K. An even lower noise temperature can be achieved by cooling the SQUID to about 0.4 K. In this case, a noise temperature of $100\;mK\;{\pm}\;20\;mK$ was achieved at 90 MHz, and of about $120\;{\pm}\;100\;mK$ at 440 MHz.

• Progress in Superconductivity
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• v.2 no.1
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• pp.1-5
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• 2000

We have developed an extremely sensitive radio frequency amplifier based on the dc superconducting quantum interference device (dc SQUID). Unlike a conventional semiconductor amplifier, a SQUID can be cooled to ultra-low temperatures (100 mK or less) and thus potentially achieve a much lower noise temperature. In a conventional SQUID amplifier, where the integrated input coil is operated as a lumped element, parasitic capacitance between the coil and the SQUID washer limits the frequency up to which a substantial gain can be achieved to a few hundred MHz. This problem can be circumvented. by operating the input coil of the SQUID as a microstrip resonator: instead of connecting the input signal between the two ends of the coil, it is connected between the SQUID washer and one end of the coil; the other end is left open. Such amplifiers have gains of 15 dB or more at frequencies up to 3 GHz. If required, the resonant frequency of the microstrip can be tuned by means of a varactor diode connected across the otherwise open end of the resonator. The noise temperature of microstrip SQUID amplifiers was measured to be between 0.5 K $\pm$ 0.3 K at a frequency of 80 MHz and 1.5 K $\pm$: 1.2 K at 1.7 GHz, when the SQUID was cooled to 4.2 K. An even lower noise temperature can be achieved by cooling the SQUID to about 0.4 K. In this case, a noise temperature of 100 mK $\pm$ 20 mK was achieved at 90 MHz, and of about 120 $\pm$ 100 mK at 440 MHz.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.05a
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• pp.721-722
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• 2010

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.05a
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• pp.559-560
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• 2010

• Journal of the Korean Society of Safety
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• v.14 no.4
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• pp.78-84
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• 1999

A compact air-preheating type heat exchanger was developed and tested for the ultra-high temperature heat recovery applications. For the direct use of exhaust gases up to $1200^{\circ}C$, the heat exchanger adopted a ceramic core with high strength and low thermal expansion coefficient less than $1{\times}10^{-6}^{\circ}C^{-1}$. The ceramic core was fabricated by special extrusion and bonding techniques. To minimize thermal stresses in the core, spring-loaded sealing mechanism was designed and successfully installed. 1-pass air flow scheme was adopted for the compactness and cost-savings. The pressure test for the ceramic core showed no failure under 35 kPa and less than 3% leak under 7 kPa. Flue gas simulation system was developed to investigate the performance of the heat exchanger. The test results showed normal operations of the heat exchanger up to $1200^{\circ}C$ of exhaust gases and relatively high heat recovery efficiencies of 31～39% depending upon exhaust gas temperatures..

• Journal of the Korean Applied Science and Technology
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• v.23 no.3
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• pp.238-242
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• 2006

Polyimide is a well-known organic dielectric material, which has not only high chemical and thermal stability but also good electrical insulating and mechanical properties. In this research, the electric conduction mechanism of PI Ultra-Thin Films was investigated at room temperature. At low electric field, ohmic conduction $(I{\propto}V)$ was observed and the calculated electrical conductivity was about $4.23{\times}10^{-15}{\sim}9.81{\times}10^{-15}\;S/cm$. At high electric field, nonohmic conduction $(I{\propto}V^2)$ was observed and the conduction mechanism was explained by space charge limited region effect. The dielectric constant of PI Ultra-Thin Films was about 7.0.

• Macromolecular Research
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• v.12 no.1
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• pp.112-118
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• 2004

With the goal of enhancing the creep resistance of ultra-high molecular weight polyethylene (UHMWPE), we performed gamma irradiation and post-irradiation annealing at a low temperature, and investigated the crystalline structures and mechanical properties of the samples. Electron spin resonance spectra reveal that most of the residual radicals are stabilized by annealing at 100$^{\circ}C$ for 72 h under vacuum. Both the melting temperature and crystallinity increase after increasing the dose and by post-irradiation annealing. When irradiated with the same dose, the quenched sample having a higher amorphous fraction exhibits a lower swell ratio than does the slow-cooled sample. The measured tensile properties correlate well to the crystalline structure of the irradiated and annealed samples. For enhancing creep resistance, high crystallinity appears to be more critical than a high degree of crosslinking.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.53-53
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• 2008

Piezoelectric transformers have been widely used such as DC-DC convertor, invertor, Ballast, etc. Because, the y have some merits compared with electro-magnetic transformers such as step-up ratio, high efficiency, small size and lg hit weight, etc. Piezoelectric transformer require high electromechanical coupling factor kp in order to induce a large out put power in proportional to applied electric field. And also, high mechanical quality factor Qm is required to prevent mechanical loss and heat generation. In general, PZT system ceramics should be sintered at high temperatures between 1200 and $1300^{\circ}C$ in order to obtain complete densification. Accordingly, environmental pollution due to its PbO evaporation. Hence, to reduce its sintering temperature, various kinds of material processing methods such as hot pressing, high energy mill, liquid phase sintering, and using ultra fine powder have been performed. Among these methods, liquid phase sintering is basically an effective method for aiding densification at low temperature. In this study, In order to comparis on low temperature sintering and solid state sintering piezoelectric transformers, rosen type transformers were fabricated u sing two PZT ceramics compositions and their electrical properties were investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.385-386
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• 2008

This paper reports the design of the ultra low power consumption microhotplates for high temperatures. The microhotplates consisting of a platinum-based heating element on AlN/poly 3C-SiC layers were designed. The microhotplate is a $600\times600{\mu}m^2$ square shaped membrane made of $1{\mu}m$ thick ploy 3C-SiC suspended by four legs. The microhotplate was compared with $Si_3N_4/SiO_2/Si_3N_4$(NON) structure microhotplate by COMSOL simulation system. Thermal uniformity, power consumption and thermal characterizations of microhotplates based on 3C-SiC thin film are better than microhotplates with NON structure.