• ETRI Journal
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• 제31권3호
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• pp.254-262
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• 2009

This paper presents a novel simple filter design method based on a parallel short-ended coupled-line structure with capacitive loading for size reduction and ultra-broad rejection of spurious passbands. In addition, the introduction of a cross-coupling capacitor into the miniaturized coupled-line can create a transmission zero at the second harmonic frequency for better frequency selectivity and attenuation level. The aperture compensation technique is also applied to achieve a strong coupling in the coupled-line section. The influence of using the connecting transmission line to cascade two identical one-stage filters is studied for the first time. Specifically, such a two-stage bandpass filter operating at 2.3 GHz with a fractional bandwidth of 10% was designed and realized with low-temperature co-fired ceramic technology for application in base stations that need high power handling capability. It achieved attenuation in excess of -40 dB up to $4f_0$ and low insertion loss of -1.2 dB with the size of 10 mm ${\times}$ 7 mm ${\times}$ 2.2 mm. The measured and simulated results showed good agreement.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1416-1418
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• 1998

In this paper, the physical and electrical conduction properties due to the electron beam irradiation for low density polyethylene using insulating materials of the distribution cable and ultra-high voltage cable are studied. In FTIR spectrum for physical properties, the strong absorptions by methyl groups in wavenumbers 720[$cm^{-l}$] and 1463[$cm^{-l}$] are observed, and the effect by residual carbonyl groups (C = 0) is hardly appeared. So, as a result of the electrical conduction properties, it is confirmed that the conduction current is increased nearly to 50[$^{\circ}C$], and is not changed until the crystalline melting point from the temperature over 60[$^{\circ}C$] because of the defects of morphology and the formation of many trap centers by means of electron beam irradiation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.306-306
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• 2010

A high density (> $10^{11}\;cm^{-3}$) and low electron temperature (< 2 eV) plasma is produced by using a conventional HF (13.56 MHz) plasma enhanced chemical vapor deposition (PECVD) with an additional ultra high frequency (UHF, 314 MHz) plasma source utilizing two parallel antenna assembly. It is applied for the high rate synthesis of high quality nanocrystalline silicon (nc-Si) films. A high deposition rate of 1.8 nm/s is achieved with a high crystallinity (< 70%), a low spin density (< $3{\times}10^{16}\;cm^{-3}$) and a high light soaking stability (< 1.5). Optical emission spectroscopy measurements reveal emission intensity of $Si^*$ and $SiH^*$, intensity ratio of $H{\alpha}/Si^*$ and $H{\alpha}/SiH^*$ which are closely related to film deposition rate and film crystallinity, respectively. A high flux of precursor and atomic hydrogen which are produced by an additional high excitation frequency is effective for the fast deposition of highly crystallized nc-Si films without additional defects.

• 한국세라믹학회지
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• 제44권11호
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• pp.597-606
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• 2007

With the advent of ubiquitous age, the high quality dielectric materials have been required for the wireless communications available to the millimeterwave as well as microwave frequencies. The utilizable region for the frequency has been expanding to the millimeter-wave region because of the shortage of radio frequency (RF) resources. These high frequencies would be expected for ultra high speed LAN, ETS and car anti-collision system on the intelligent transport system (ITS) and so on. Silicates are good candidates for microwave/millimeterwave dielectrics, because of their low dielectric constant ${\epsilon}_r$ and high quality factor (High Q). Forsterite ($Mg_2SiO_4$) is one of the silicates with low ${\epsilon}_r$ of 6.8 and Q f of 240000 GHz. In this paper, we reviewed following three categories for synthesis of forsterite: (1) Synthesis of high Q forsterite (2) Adjust the temperature coefficient of resonant frequency $TC_f$ (3) Diffusion of $SiO_{4^-}$ and Mg-ions on the formation of forsterite.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.77-77
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• 2016

Thin films synthesized by plasma processes have been widely applied in a variety of industrial sectors. The structure control of thin film is one of prime factor in most of these applications. It is well known that the structure of this film is closely associated with plasma parameters and species of plasma which are electrons, ions, radical and neutrals in plasma processes. However the precise control of structure by plasma process is still limited due to inherent complexity, reproducibility and control problems in practical implementation of plasma processing. Therefore the study on the fundamental physical properties that govern the plasmas becomes more crucial for molecular scale control of film structure and corresponding properties for new generation nano scale film materials development and application. The thin films are formed through nucleation and growth stages during thin film depostion. Such stages involve adsorption, surface diffusion, chemical binding and other atomic processes at surfaces. This requires identification, determination and quantification of the surface activity of the species in the plasma. Specifically, the ions and neutrals have kinetic energies ranging from ~ thermal up to tens of eV, which are generated by electron impact of the polyatomic precursor, gas phase reaction, and interactions with the substrate and reactor walls. The present work highlights these aspects for the controlled and low-temperature plasma enhanced chemical vapour disposition (PECVD) of Si-based films like crystalline Si (c-Si), Si-quantum dot, and sputtered crystalline C by the design and control of radicals, plasmas and the deposition energy. Additionally, there is growing demand on the low-temperature deposition process with low hydrogen content by PECVD. The deposition temperature can be reduced significantly by utilizing alternative plasma concepts to lower the reaction activation energy. Evolution in this area continues and has recently produced solutions by increasing the plasma excitation frequency from radio frequency to ultra high frequency (UHF) and in the range of microwave. In this sense, the necessity of dedicated experimental studies, diagnostics and computer modelling of process plasmas to quantify the effect of the unique chemistry and structure of the growing film by radical and plasma control is realized. Different low-temperature PECVD processes using RF, UHF, and RF/UHF hybrid plasmas along with magnetron sputtering plasmas are investigated using numerous diagnostics and film analysis tools. The broad outlook of this work also outlines some of the 'Grand Scientific Challenges' to which significant contributions from plasma nanoscience-related research can be foreseen.

• 한국화재소방학회논문지
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• 제24권6호
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• pp.61-68
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• 2010

이 논문에서는 주택화재 예방을 위해 10년 이상 전지의 교체 없이 지속적으로 유지가 되도록 회로 설계된 저소비 전력의 단독경보형 정온식감지기의 연구.개발 경험을 기술하고자 한다. 구현된 감지기는 우선하여 일본에 적용되도록 개발한 것이다. 국내에서는 주택용 화재감지기를 위한 별도의 규정이 적용되지 않고 단독경보형감지기의 규정으로 적용되고 있어서 별도의 규정을 두고 있는 일본의 사례가 인용되어 있다. 이를 위해 먼저 국내의 법적 현황, KFI 규격과 JFEII에 대한 시험 규격 비교 검토가 수행되었다. 감지기의 경보는 버저와 표시 LED를 통해 표현된다. 감지기 구현 시에 소비전류를 줄이기 위해 대기전력이 극히 적은 MCU를 적용하고, MCU의 슬립상태와 감시상태의 동작을 적절히 제어하여 평균적인 소비 전류를 최소화하도록 하였다. 정온식감지기에서 온도 검출을 위해 응답성이 빠른 서미스터를 적용하고, 감지기의 자동시험기능과 경보정지 기능도 설계에 반영하였다. 전류소비를 줄이기 위해 고려해야 할 부분에 대해서 언급이 되어 있으며, 주요한 부분에 대한 전자회로를 나타내었다. 구현 사례로서 감지기의 서미스터 동작 특성 분석 결과가 나타나 있고, 구현된 감지기의 소비 전류 측정값과 상용 전지 방전특성의 분석을 통해 10년 이상 동안 전지의 교환 없이 적용 가능함을 보여주고 있다.

• 한국포장학회지
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• 제21권2호
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• pp.79-84
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• 2015

본 연구에서는 기존에 관행적으로 상온에서 방치되어오던 단감의 예건 조건을 온도와 시간을 달리하면서 단감의 중량 감소율, 경도 및 저온저장고에서 장시간 저장 후 경도 감소율을 비교하였다. 상온에서의 예건은 처리시간이 일주일씩 되기 때문에 수확 시기에 공간적인 문제와 함께 농가에서 어려움이 있어 예건 온도를 높이면서 처리시간을 단축하여 단감의 품질변화가 유지되거나 향상되는 예건 조건을 찾았다. 예건 처리 조건 중에서 고온($30{\sim}40^{\circ}C$) 6시간 처리 시 단감의 중량 감소율은 $1.28{\pm}0.22%$로 대조군의 $1.62{\pm}0.02%$보다도 약 20% 억제하는 경향을 보였고, 과육의 경도는 $22.2{\pm}2.64N$으로 매우 단단한 경도를 보였으며, 저온저장고에서 100일간 저장 후 경도 감소율에서도 $12.9{\pm}3.8%$의 감소율을 보여 대조군에 비해 약 50% 향상되는 결과를 얻었다.

• 한국세라믹학회지
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• 제47권6호
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• pp.578-582
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• 2010

$ZrB_2$ has a melting point of $3245^{\circ}C$ and a relatively low density of $6.1\;g/cm^3$, which makes this a candidate for application to ultrahigh temperature environments over $2000^{\circ}C$. Beside these properties, $ZrB_2$ is known to have excellent resistance to thermal shock and oxidation compared with other non-oxide engineering ceramics. In order to enhance such oxidation resistance, SiC was frequently added to $ZrB_2$-based systems. Due to nonsinterability of $ZrB_2$-based ceramics, research on the sintering aids such as $B_4C$ or $MoSi_2$ becomes popular recently. In this study, densification and high-temperature properties of $ZrB_2$-SiC ceramics especially with $B_4C$ are investigated. $ZrB_2$-20 vol% SiC system was selected as a basic composition and $B_4C$ or C was added to this system in some extents. Mixed powders were sintered using hot pressing (HP). With sintered bodies, densification behavior and high-temperature (up to $1400^{\circ}C$) properties such as flexural strength, hardness, and so on were examined.

• 센서학회지
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• 제13권2호
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• pp.128-132
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• 2004

Short wave infrared (SWIR) photovoltaic devices have been fabricated from metal organic vapour phase epitaxy (MOVPE) grown n- on p- HgCdTe films on GaAs substrates. The MOVPE grown films were processed into mesa type discrete devices with wet chemical etching employed for meas delineation and ZnS surface passivatlon. ZnS was thermally evaporated from effusion cell in an ultra high vacuum (UHV) chamber. The main features of the ZnS deposited from effusion cell in UHV chamber are low fixed surface charge density, and small hysteresis. It was found that a negative flat band voltage with -0.6 V has been obtained for Metal Insulator Semiconductor (MIS) capacitor which was evaporated at $910^{\circ}C$ for 90 min. Current-Voltage (I-V) and temperature dependence of the I-V characteristics were measured in the temperature range 80 - 300 K. The Zero bias dynamic resistance-area product ($R_{0}A$) was about $7500{\Omega}-cm^{2}$ at room temperature. The physical mechanisms that dominate dark current properties in the HgCdTe photodiodes are examined by the dependence of the $R_{0}A$ product upon reciprocal temperature. From theoretical considerations and known current expressions for thermal and tunnelling process, the device is shown to be diffusion limited up to 180 K and g-r limited at temperature below this.

• 콘크리트학회논문집
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• 제22권3호
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• pp.389-397
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• 2010

콘크리트는 역학적 성능, 내구성능, 경제성이 우수한 재료이지만 장경간 교량에 적용하기는 쉽지 않은데, 이는 콘크리트의 중량 대비 강도가 낮기 때문이다. 초고성능 콘크리트는 높은 압축강도를 가지며 굵은 골재를 사용하지 않으므로 단면의 크기를 줄일 수 있어, 장경간 교량 바닥판으로 활용이 기대된다. 그러나 초고성능 콘크리트는 재료 특성상 단위결합재량이 많으므로 바닥판 양생과정에서 수화열에 의한 균열이 발생할 수 있다. 이 연구에서는 UHPC 바닥판의 초기재령 균열 위험성을 평가하기 위한 기초 작업을 수행하였다. 먼저 단열온도 상승시험 결과를 바탕으로 2변수 모델과 S자형 함수의 중첩으로 단열온도 상승곡선을 모델링하고, 등가재령의 개념을 도입하여 UHPC의 아레니우스 상수를 결정하였다. 이상의 결과를 실물크기 시험체에 대한 수화발열 측정시험으로 검증하였다. 다음으로 초음파 속도 측정 결과와 하중 재하에 의하여 탄성계수, 인장강도, 압축강도와 같은 UHPC의 역학적 특성을 구하였다.