• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 제2회 학술대회 논문집 일렉트렛트 및 응용기술전문연구회
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• pp.59-63
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• 2000

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below $730^{\circ}C$ and decreases linearly with temperature over $730^{\circ}C$ This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_2O_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.300-303
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• 2001

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below $730^{\circ}C$ and decreases linearly with temperature over $730^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_{2}O_{3}$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi 2212 phase formation in the co-deposition process.

• 한국전기전자재료학회논문지
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• 제13권1호
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• pp.80-84
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• 2000

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coeffi-cient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below 73$0^{\circ}C$ and decreases linearly with temperature over 73$0^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi\ulcornerO\ulcorner, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.242-245
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• 1997

Co single layer and Co/Ti used to form a CoSi$_2$ contact. We fabricated the n+/p diodes with this CoSi$_2$ contact as diffusion source of As. The diodes wish CoSi$_2$ formed by Co/ri bilayer had more Bo7d electrical characteristics than CoSi$_2$ formed by Co single layer. This shows that the flatness of interface which is a parameters to affect the diodes\` electrical characteristics. And the electrical characteristics of diodes are more good when the second thermal activation processing temperature was low as much as 50$0^{\circ}C$ than the temperature high over than 80$0^{\circ}C$, it was thought as that the silicide was degradated at high temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.300-303
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• 2001

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below 730$^{\circ}C$ and decreases linearly with temperature over 730$^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi$_2$O$_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi 2212 phase formation in the co-deposition process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.213-216
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• 1999

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristics temperature dependence : almost a constant value of 0.49 below 730$^{\circ}C$ and decreases linearly with temperature over 730$^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi$_2$O$_3$ from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.193-197
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• 2000

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below 73$0^{\circ}C$ and decreases linearly with temperature over 73$0^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi$_2$O$_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• 한국식품조리과학회지
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• 제30권3호
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• pp.262-270
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• 2014

This study was conducted in order to investigate the properties of bread making and quality improvement when wheat flour is replaced with whole waxy sorghum flour. Sorghum flour, which was prepared with two types of milling methods of pin mill and ultra fine pulverization, was used at different levels ranging from 10, 20 and 30%, respectively. The pasting properties of peak viscosity, setback viscosity and pasting temperature of the composite flour containing pin-milled sorghum flour were higher than those of ultra fine pulverized sorghum flour. The volumes of sorghum bread were lower than that of wheat bread; moreover, they gradually decreased with increasing amounts of sorghum flour, which has inferior dough properties and therefore collapses in the oven. The use of vital gluten (12% based on sorghum flour weight) and emulsifier (SSL; sodium stearoyl lactylate) increased the extensibility and resistance to the extension of the dough, thereby improving its rheological properties. Thus, the oven spring of bread containing sorghum was improved, demonstrating as loaf volume increase up to 15%. However, in the case of breads containing 30% sorghum flour, the loaf volumes were still unacceptably low. Therefore, the formula and the bread making process were further modified as follows: An increase of vital gluten ($12%{\rightarrow}18%$) and shortening ($3%{\rightarrow}6%$), a decrease of mixing time and dough fermentation temperature, and the addition of sorghum flour after gluten development during mixing. The above modifications resulted in the improvement of sorghum bread quality. Therefore, we suggest that pin-milled sorghum flour is more appropriate than ultra fine pulverized sorghum flour for making bread.

• IEIE Transactions on Smart Processing and Computing
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• 제4권5호
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• pp.354-365
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• 2015

This work presents an Internet of Things (IoT) system for home energy management based on a custom-designed Impulse Radio Ultra-Wideband (IR-UWB) transceiver that targets a generic and multi-standard control system. This control system enables the interoperability of heterogeneous devices: it integrates various sensor nodes based on ZigBee, EnOcean and UWB in the same middleware by utilizing an ad-hoc layer as an interface between the hardware and software. The paper presents as a first the design of the IR-UWB transceiver for a portable sensor node integrated with the middleware layer, and also describes the receiver connected to the control system. The custom-designed low-power transmitter on the sensor node is fabricated with 130 nm CMOS technology. It generates a signal with a 1.1 ns pulse width while consuming $39{\mu}W$ at 1 Mbps. The UWB sensor node with a temperature measurement capability consumes 5.31 mW, which is lower than the power level of state-of-the-art solutions for smart-home applications. The UWB hardware and software layers necessary to interface with the control system are verified in over-the-air measurements in an actual office environment. With the implementation of the presented sensor node and its integration in the energy management system, we demonstrate achievement of the broad flexibility demanded for IoT.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.111-111
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• 2007

Further scaling the semiconductor devices down to low dozens of nanometer needs the extremely shallow depth in junction and the intentional counter-doping in the silicon gate. Conventional ion beam ion implantation has some disadvantages and limitations for the future applications. In order to solve them, therefore, plasma source ion implantation technique has been considered as a promising new method for the high throughputs at low energy and the fabrication of the ultra-shallow junctions. In this paper, we study about the effects of DC bias and base pressure as a process parameter. The diluted mixture gas (5% $PH_3/H_2$) was used as a precursor source and chamber is used for vacuum pressure conditions. After ion doping into the Si wafer(100), the samples were annealed via rapid thermal annealing, of which annealed temperature ranges above the $950^{\circ}C$. The junction depth, calculated at dose level of $1{\times}10^{18}/cm^3$, was measured by secondary ion mass spectroscopy(SIMS) and sheet resistance by contact and non-contact mode. Surface morphology of samples was analyzed by scanning electron microscopy. As a result, we could accomplish the process conditions better than in advance.