• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.364.1-364.1
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• 2016

We report the characteristics of individual ultra-long SnO2 nanowires(NWs) grown on sapphire(0001) substrates by vapor transport method. NWs, with typical lengths of >$400{\mu}m$, grew in the form of NW bundles under a hydrogen reducing atmosphere, without metal catalysts. The individual NWs were examined using high-resolution X-ray diffraction, transmission electron microscopy, and micro-Raman spectroscopy. The results revealed that the SnO2 NWs grew as high-quality, tetragonal-rutile-phase single crystals with mosaic distributions of $0.02^{\circ}$ and $0.026^{\circ}$ in the (101) and (110) planes, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.360-360
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• 2012

Graphene shows diverse novel physical properties arising from its peculiar electronic states, so called Dirac electrons. Especially, effect of magnetic field is very unique, exhibiting exotic Landau level (LL) splitting. LLs are substantially modified by spins of Dirac electrons and pseudo-spins. The degeneracy of LLs is lifted to show splitting by electron-electron interaction and by the Zeeman effect. We investigated the magneto-optical absorption of graphene subjected to ultra-high magnetic field. Samples were prepared by the CVD method deposited on GaAs and Quart substrate. We have confirmed existence of graphene on each substrate by the micro-Raman spectroscopy. Next, we conducted magneto-absorption measurements in magnetic field up to 120 T by the single-turn coil (STC) method. We could observe absorption peak at 65 T and 100 T, respectively, probably arising from the LL inter-band transitions.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.465-468
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• 1999

Electrical properties of metal-ferroelectric-semiconductor field effect transistor(MFSFET) using $BaMgF_4$ thin films grown on p-Si(100) substrates have been investigated. $BaMgF_4$ thin films have been directly deposited on the p-Si(100) wafers at a low temperature of $300^{\circ}C$ in an ultra high vacuum(UHV) system. First an in-situ post-deposition annealing was conducted for 20s at $650^{\circ}C$ and second an in-situ post-annealing was conducted for 10s at $950^{\circ}C$. The electrical properties of MFSFET compared with using A1 and Pt electrodes.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.59-62
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• 1998

Thermal treatment dependences of MFS devices in $BaMgF_4$ on Si structures have been investigated. $BaMgF_4$ thin films have been directly deposited on the p-Si(100) wafers at a low temperature of $300^{\circ}$ in an ultra high vacuum(UHV) system. After in-situ post-deposition annealing was conducted for 20 s at $650^{\circ}$, bias and temperature were applied to $BaMgF_4/Si$ structures. Although X-ray diffraction analysis showed that the films were polycrystalline in nature before and after bias temperature, the C-V properties were some different between with and without bias-temperature treatment.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.108-111
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• 2003

Currently, molecular devices are reported utilizing active self-assembled monolayers containing the nitro group as the active component, which has active redox centers[1]. We confirm the electrical properties of 4,4-di(ethynylphenyl)-2'-nitro-1-benzenethiolate. To deposit the SAM layer onto gold electrode, we transfer the prefabricated Au(111) substrates into a 1mM self-assembly molecules in THF solution. Au(111) substrates were prepared by ion beam sputtering method of gold onto the silicon wafer. As a result, we measured current-voltage curve using ultra high vacuum scanning tunneling microscopy (UHV STM), I-V curve also clearly shows several current peaks between the negative bias region (-0.3958V) and the positive bias region (0.4658V), respectively.

• 한국진공학회지
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• 제1권3호
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• pp.332-335
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• 1992

초고진공 시스템에 있어서 시스템을 대기압으로 바람을 넣은 후 정상상태로의 신 속한 원상회복을 위하여 건조질소 통풍(venting) 장치를 고안 제작하였다. 이 장치는 액체 질소 저장통, 증발기 및 여과기로 구성되어 있다. 이 장치에 의한 통풍효과와 다른 방법에 의한 통풍효과를 가스 방출률 측정을 통하여 정성적으로 비교 분석하였을 때, 본 장치가 가 장 낮은 가스 방출률과 가장 빠른 진공회복을 보여주었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제37회 하계학술대회 초록집
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• pp.78-78
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• 2009

• 한국진공학회지
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• 제3권4호
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• pp.377-381
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• 1994

초고진공(UHV) Scanning Tummeling Microscopy(STM)을 제작하였다. 8인치 프란지에 부착한 STM은 초고진공에서 시료의 통전가열이 가능하며 다른 표면 측정방법의 적용과시료처리가 용이하다. 외부로부터 초고진공을 깨지 않고 시료와 tip의 도입이 가능하며 tip을 가열할 수 있다. 완성된 장치로 Si(111)-7$\times$7 구조의 STM상을 얻었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1992년도 제2회 학술발표회 논문개요집
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• pp.51-51
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• 1992

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.70.1-70.1
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• 2015

The facility for RAON superconducting heavy-ion accelerator at a beam power of up to 400 kW will be produced rare isotopes with two electron cyclotron resonance (ECR) ion sources. Highly charged ions generated by the ECR ion source will be injected to a superconducting LINAC to accelerate them up to 200 MeV/u. During the acceleration of the heavy ions, a good vacuum system is required to avoid beam loss due to interaction with residual gases. Therefore ultra-high vacuum (UHV) is required to (i) limit beam losses, (ii) keep the radiation induced within safe levels, and (iii) prevent contamination of superconducting cavities by residual gas. In this work, a RAON vacuum design for all the accelerator system will be presented along with Monte Carlo simulation of vacuum levels in order to validate the vacuum hardware configuration, which is needed to meet the baseline requirements.