• Title/Summary/Keyword: Ultra-dense D2D

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Fast Channel Allocation for Ultra-dense D2D-enabled Cellular Network with Interference Constraint in Underlaying Mode

  • Dun, Hui;Ye, Fang;Jiao, Shuhong
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.15 no.6
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    • pp.2240-2254
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    • 2021
  • We investigate the channel allocation problem in an ultra-dense device-to-device (D2D) enabled cellular network in underlaying mode where multiple D2D users are forced to share the same channel. Two kinds of low complexity solutions, which just require partial channel state information (CSI) exchange, are devised to resolve the combinatorial optimization problem with the quality of service (QoS) guaranteeing. We begin by sorting the cellular users equipment (CUEs) links in sequence in a matric of interference tolerance for ensuring the SINR requirement. Moreover, the interference quota of CUEs is regarded as one kind of communication resource. Multiple D2D candidates compete for the interference quota to establish spectrum sharing links. Then base station calculates the occupation of interference quota by D2D users with partial CSI such as the interference channel gain of D2D users and the channel gain of D2D themselves, and carries out the channel allocation by setting different access priorities distribution. In this paper, we proposed two novel fast matching algorithms utilize partial information rather than global CSI exchanging, which reduce the computation complexity. Numerical results reveal that, our proposed algorithms achieve outstanding performance than the contrast algorithms including Hungarian algorithm in terms of throughput, fairness and access rate. Specifically, the performance of our proposed channel allocation algorithm is more superior in ultra-dense D2D scenarios.

Property of molecular beam epitaxy-grown ZnSe/GaAs (분자선 에피성장법으로 성장된 ZnSe/GaAs의 특성)

  • Kim, Eun-Do;Son, Young-Ho;Cho, Seong-Jin;Hwang, Do-Weon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.17 no.2
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    • pp.52-56
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    • 2007
  • We have installed an ultra high vacuum (UHV) molecular beam epitaxy (MBE) system and investigated into the characteristics of MBE-grown ZnSe/GaAs [001] using scanning electron microscopy (SEM), atomic force microscopy (AFM), we confirmed that layer's surface was dense and uniform of molecular layer. We used x-ray diffractometer (XRD) and confirmed two peaks correspond to GaAs [001] substrate and ZnSe epilayer, respectively. We observed photoluminescence (PL) peak approximately at 437 nm and measured PL mapping of 2 inch ZnSe epilayer.

Rapid Sintering Process of Ultra Fine WC-Co Hard Materials by High-Frequency Induction Heating

  • Kim, H.C;Oh, D.Y.;Jeong, J.W.;Shon, I.J.
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2003.10a
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    • pp.39-40
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    • 2003
  • 1) Using a developed high-frequency induction heated sintering method, the rapid densification of WC-Co hard materials was accomplished using ultra fine powders with 260 nm size within 1 minute. 2) The relative density of the composite was 99.5% for the applide pressure of 60MPa and the induced current for 90% output of total capacity. 3) The grain size of WC-Co hard materials is about 260nm and the average thickness of the binder phase determined is about 11nm. The fracture toughness and the hardness of this work 12 $MPa{\cdot}nm^2$, respectively. 4) Using pressureless sintering, we produced dense WC-Co hard materials with a relative density of 97% without applying pressure.

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Effect of cover depth and rebar diameter on shrinkage behavior of ultra-high-performance fiber-reinforced concrete slabs

  • Yoo, Doo-Yeol;Kwon, Ki-Yeon;Yang, Jun-Mo;Yoon, Young-Soo
    • Structural Engineering and Mechanics
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    • v.61 no.6
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    • pp.711-719
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    • 2017
  • This study investigates the effects of reinforcing bar diameter and cover depth on the shrinkage behavior of restrained ultra-high-performance fiber-reinforced concrete (UHPFRC) slabs. For this, twelve large-sized UHPFRC slabs with three different rebar diameters ($d_b=9.5$, 15.9, and 22.2 mm) and four different cover depths (h=5, 10, 20, and 30 mm) were fabricated. In addition, a large-sized UHPFRC slab without steel rebar was fabricated for evaluating degree of restraint. Test results revealed that the uses of steel rebar with a large diameter, leading to a larger reinforcement ratio, and a low cover depth are unfavorable regarding the restrained shrinkage performance of UHPFRC slabs, since a larger rebar diameter and a lower cover depth result in a higher degree of restraint. The shrinkage strain near the exposed surface was high because of water evaporation. However, below a depth of 18 mm, the shrinkage strain was seldom influenced by the cover depth; this was because of the very dense microstructure of UHPFRC. Finally, owing to their superior tensile strength, all UHPFRC slabs with steel rebars tested in this study showed no shrinkage cracks until 30 days.

Fully parallel low-density parity-check code-based polar decoder architecture for 5G wireless communications

  • Dinesh Kumar Devadoss;Shantha Selvakumari Ramapackiam
    • ETRI Journal
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    • v.46 no.3
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    • pp.485-500
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    • 2024
  • A hardware architecture is presented to decode (N, K) polar codes based on a low-density parity-check code-like decoding method. By applying suitable pruning techniques to the dense graph of the polar code, the decoder architectures are optimized using fewer check nodes (CN) and variable nodes (VN). Pipelining is introduced in the CN and VN architectures, reducing the critical path delay. Latency is reduced further by a fully parallelized, single-stage architecture compared with the log N stages in the conventional belief propagation (BP) decoder. The designed decoder for short-to-intermediate code lengths was implemented using the Virtex-7 field-programmable gate array (FPGA). It achieved a throughput of 2.44 Gbps, which is four times and 1.4 times higher than those of the fast-simplified successive cancellation and combinational decoders, respectively. The proposed decoder for the (1024, 512) polar code yielded a negligible bit error rate of 10-4 at 2.7 Eb/No (dB). It converged faster than the BP decoding scheme on a dense parity-check matrix. Moreover, the proposed decoder is also implemented using the Xilinx ultra-scale FPGA and verified with the fifth generation new radio physical downlink control channel specification. The superior error-correcting performance and better hardware efficiency makes our decoder a suitable alternative to the successive cancellation list decoders used in 5G wireless communication.

Thermodynamic Prediction of TaC CVD Process in TaCl5-C3-H6-H2 System (TaCl5-C3-H6-H2 계에서 TaC CVD 공정의 열역학 해석)

  • Kim, Hyun-Mi;Choi, Kyoon;Shim, Kwang-Bo;Cho, Nam-Choon;Park, Jong-Kyoo
    • Korean Journal of Materials Research
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    • v.28 no.2
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    • pp.75-81
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    • 2018
  • An ultra-high temperature ceramic, tantalum carbide, has received much attention for its favorable characteristics: a superior melting point and chemical compatibility with carbon and other carbides. One drawback is the high temperature erosion of carbon/carbon (C/C) composites. To address this drawback, we deposited TaC on C/C with silicon carbide as an intermediate layer. Prior to the TaC deposition, the $TaCl_5-C_3H_6-H_2$ system was thermodynamically analyzed with FactSage 6.2 and compared with the $TaCl_5-CH_4-H_2$ system. The results confirmed that the $TaCl_5-C_3H_6-H_2$ system had a more realistic cost and deposition efficiency than $TaCl_5-CH_4-H_2$. A dense and uniform TaC layer was successfully deposited under conditions of Ta/C = 0.5, $1200^{\circ}C$ and 100 torr. This study verified that the thermodynamic analysis is appropriate as a guide and prerequisite for carbide deposition.

Development of Semiconductor Packaging Technology using Dicing Die Attach Film

  • Keunhoi, Kim;Kyoung Min, Kim;Tae Hyun, Kim;Yeeun, Na
    • Journal of Sensor Science and Technology
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    • v.31 no.6
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    • pp.361-365
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    • 2022
  • Advanced packaging demands are driven by the need for dense integration systems. Consequently, stacked packaging technology has been proposed instead of reducing the ultra-fine patterns to secure economic feasibility. This study proposed an effective packaging process technology for semiconductor devices using a 9-inch dicing die attach film (DDAF), wherein the die attach and dicing films were combined. The process involved three steps: tape lamination, dicing, and bonding. Following the grinding of a silicon wafer, the tape lamination process was conducted, and the DDAF was arranged. Subsequently, a silicon wafer attached to the DDAF was separated into dies employing a blade dicing process with a two-step cut. Thereafter, one separated die was bonded with the other die as a substrate at 130 ℃ for 2 s under a pressure of 2 kgf and the chip was hardened at 120 ℃ for 30 min under a pressure of 10 kPa to remove air bubbles within the DAF. Finally, a curing process was conducted at 175 ℃ for 2 h at atmospheric pressure. Upon completing the manufacturing processes, external inspections, cross-sectional analyses, and thermal stability evaluations were conducted to confirm the optimality of the proposed technology for application of the DDAF. In particular, the shear strength test was evaluated to obtain an average of 9,905 Pa from 17 samples. Consequently, a 3D integration packaging process using DDAF is expected to be utilized as an advanced packaging technology with high reliability.