• Journal of Sensor Science and Technology
• /
• v.18 no.4
• /
• pp.307-310
• /
• 2009

This paper describes the formation of porous 3C-SiC by anodization. 3C-SiC thin films were deposited on p-type Si(100) substrates by APCVD using HMDS(Hexamethyildisilane: $Si_2(CH_3)_6$). UV-LED(380 nm) was used as a light source. The surface morphology was observed by SEM and the pore size was increased with increase of current density. Pore diameter of 70 $\sim$ 90 nm was achieved at 7.1 mA/cm$^2$ current density and 90 sec anodization time. FT-IR was conducted for chemical bonding of thin film and porous 3C-SiC. The Si-H bonding was observed in porous 3C-SiC around wavenumber 2100 cm$^{-1}$. PL shows the band gap enegry of thin film(2.5 eV) and porous 3C-SiC(2.7 eV).

• Bulletin of the Korean Chemical Society
• /
• v.28 no.4
• /
• pp.533-537
• /
• 2007

This paper describes the heteroepitaxial growth of single-crystalline 3C-SiC (cubic silicon carbide) thin films on Si (100) wafers by atmospheric pressure chemical vapor deposition (APCVD) at 1350 oC for micro/nanoelectromechanical system (M/NEMS) applications, in which hexamethyldisilane (HMDS, Si2(CH3)6) was used as a safe organosilane single-source precursor. The HMDS flow rate was 0.5 sccm and the H2 carrier gas flow rate was 2.5 slm. The HMDS flow rate was important in obtaing a mirror-like crystalline surface. The growth rate of the 3C-SiC film in this work was 4.3 μm/h. A 3C-SiC epitaxial film grown on the Si (100) substrate was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and Raman scattering, respectively. These results show that the main chemical components of the grown film were single-crystalline 3C-SiC layers. The 3C-SiC film had a very good crystal quality without twins, defects or dislocations, and a very low residual stress.

• Journal of The Geomorphological Association of Korea
• /
• v.23 no.2
• /
• pp.1-13
• /
• 2016

This study analyzed pollen compositions in archaeological site on alluvial plain of Taehwa River, Taehwa-dong, Ulsan-si vegetational and environmental change during 6,200~3,000 yr BP. The results consist upward of Pollen Zone I (Inner Bay environment), Pollen Zone II (Quercus-Alnus stage) and Pollen Zone III (Alnus stage). The pollen grains of Fagopyrum and reddish gray silty horizon including artifacts of the Bronze Age suggest that there was cultivation on dry-field around the study site, although it is not sure that there was paddy-field cultivation.

• Korean Journal of Materials Research
• /
• v.9 no.12
• /
• pp.1155-1159
• /
• 1999

Thin film solar cells on a glass/$SnO_2$ substrate with p-SiC/i-Si/n-Si heterojunction structures were fabricated using a plasma-enhanced chemical-vapor deposition system. The photovoltaic properties of the solar cells were examined with varying the gas phase composition, x=$CH_4/\;(SiH_4+CH_4)$, during the deposition of the p-SiC layer. In the range of x=0~0.4, the efficiency of solar cell increased because of the increased band gap of the p-SiC window layer. Further increase in the gas phase composition, however, led to a decrease in the cell efficiency probably due to in the increased composition mismatch at the p-SiC/i-Si layers. As a result, the efficiency of a glass/$SnO_2$/p-SiC/i-SiC/i-Si/n-Si/Ag thin film solar cell with $1cm^2$ area was 8.6% ($V_{oc}$=0.85V, $J_{sc}$=16.42mA/$cm^2$, FF=0.615) under 100mW/$cm^2$ light intensity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.195-196
• /
• 2009

This paper describes the fabrication and characteristics of polycrystalline 3C-SiC thin film diodes for extreme environment applications, in which the this thin film was deposited onto oxidized Si wafers by APCVD using HMDS In this work, the optimized growth temperature and HMDS flow rate were $1,100^{\circ}C$ and 8sccm, respectively. A Schottky diode with a Au, Al/poly 3C-SiC/$SiO_2$/Si(n-type) structure was fabricated and its threshold voltage ($V_d$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_D$) values were measured as 0.84V, over 140V, 61nm, and $2.7{\times}10^{19}cm^2$, respectively. To produce good ohmic contact, Al/3C-SiC were annealed at 300, 400, and $500^{\circ}C$ for 30min under a vacuum of $5.0{\times}10^{-6}$Torr. The obtained p-n junction diode fabricated by poly 3C-SiC had similar characteristics to a single 3C-SiC p-n junction diode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.273-273
• /
• 2008

This paper describes the frequency response of two-port surface acoustic wave (SAW) resonator made of 002-polycrystalline aluminum nitride (AlN) thin film on 111-poly 3C-SiC buffer layer. In there, Polycrystalline AlN thin films were deposited on polycrystalline 3C-SiC buffer layer by pulsed reactive magnetron sputtering system, the polycrystalline 3C-SiC was grown on $SiO_2$/Si sample by CVD. The obtained results such as the temperature coefficient of frequency (TCF) of the device is about from 15.9 to 18.5 ppm/$^{\circ}C$, the change in resonance frequency is approximately linear (30-$150^{\circ}C$), which resonance frequency of AlN/3C-SiC structure has high temperature stability. The characteristics of AlN thin films grown on 3C-SiC buffer layer are also evaluated by using the XRD, and AFM images.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.04b
• /
• pp.3-6
• /
• 2009

Aluminum nitride (AIN) thin films were deposited on a polycrystalline 3C-SiC intermediate layer by a pulsed reactive magnetron sputtering system. Characteristics of the AIN/SiC heterostructures were investigated by field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), and Fourier transform infrared spectroscopy (FT-IR). The columnar structure of AIN thin films was observed by FE-SEM. The surface roughness of AlN films on the 3C-SiC buffer layer was measured using AFM. The XRD pattern of AlN films on SiC buffer layers was highly oriented at (002). Full width at half maximum (FWHM) of the rocking curve near (002) reflections was $1.3^{\circ}$. The infrared absorbance spectrum indicated that the residual stress of AIN thin films grown on SiC buffer layers was nearly negligible. The 3C-SiC intermediate layers are promising for the realization of nitride based electronic and mechanical devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.113-113
• /
• 2009

This paper describes the characteristics of a poly 3C-SiC micro heater which was fabricated on $AlN(0.1{\mu}m)/3C-SiC(1.0{\mu}m)$ suspended membranes by surface micro- machining technology. The 3C-SiC and AlN thin films which have wide energy bandgap and very low lattice mismatch were used sensors for high temperature and voltage environments. The 3C-SiC thin film was used as micro heaters and temperature sensor materials simultaneously. The implemented 3C-SiC RTD (resistance of temperature detector) and the power consumption of micro heaters were measured and calculated. The TCR (thermal coefficient of the resistance) of 3C-SiC RTD is about -5200 $ppm/^{\circ}C$ within a temperature range from $25^{\circ}C$ to $50^{\circ}C$ and -1040 $ppm/^{\circ}C$ at $500^{\circ}C$. The micro heater generates the heat about $500^{\circ}C$ at 10.3 mW. Moreover, durability of 3C-SiC micro heaters in high voltages is better than pt micro heaters. A thermal distribution measured and simulated by IR thermovision and COMSOL is uniform on the membrane surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.387-388
• /
• 2008

High temperature micro pressure sensors were fabricated by polycrystalline (poly) 3C-SiC piezoresistors formed by oxidized SOI substrates with APCVD. These have been designed by bulk micromachining below $1{\times}1mm^2$ diaphragm and Si membrane $20{\mu}m$ thick. The pressure sensitivity of fabricated pressure sensor was 0.1 mV/Vbar. The non-linearity of sensor was ${\pm}0.44%$ FS and the hysteresis was 0.61% FS.TCS of pressure sensor was -1867 ppm/$^{\circ}C$, its TCR was -792 ppm/$^{\circ}C$, and TCGF to 5 bar was -1042 ppm/$^{\circ}C$ from 25 to $400^{\circ}C$.

• Proceedings of the KIEE Conference
• /
• 2006.07c
• /
• pp.1311-1312
• /
• 2006

This paper describes the ohmic contact formation between a TiW film as a contact material deposied by RF magnetron sputter and polycrystalline 3C-SiC films deposied on thermally grown Si wafers. The specific contact resistance (${\rho}_c$) of the TiW contact was measured by using 4he C-TLM. The contact phase and interfacial reaction between TiW and 3C-SiC at high-temperature were also analyzed by XRD and SEM. All of the samples didn't show cracks of the TiW film and any interfacial reaction after annealing. Especially, when the sample was annealed at $800^{\circ}$ for 30min., the lowest contact resistivity of $2.90{\times}10^{-5}{\Omega}{\cdot}cm^2$ of was obtained due to the improved interfacial adhesion.