• Journal of Magnetics
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• v.15 no.2
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• pp.56-60
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• 2010

In this study, we investigated the optical, magnetic, and electrical transport properties of $Si_{1-x}Mn_x$ (0.1 < x < 0.9) single crystals grown by the vertical Bridgman method. The alloys with a Mn concentration of up to 64% demonstrated weak ferromagnetic ordering around $T_C=30\;K$. The $Si_{0.25}Mn_{0.75}$ and $Si_{0.18}Mn_{0.82}$ alloys showed weak ferromagnetic ordering at 70 K and antiferromagnetic ordering at 104 K, as confirmed by magnetization, neutron diffraction, and transport studies.

• Proceedings of the KIPE Conference
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• 2016.11a
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• pp.147-148
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• 2016

토템폴 구조는 브리지리스 부스트 역률보상회로 중에서도 저손실, 고효율, 저비용 그리고 낮은 전도 EMI의 특징으로 인해 많이 사용된다. 토템폴 구조의 역률보상 회로는 내부 다이오드의 역회복 문제로 인해 Si MOSFET을 이용한 전류연속모드 구동할 수 없어 전류 불연속 모드 혹은 임계 도통 모드로 동작시키는 것이 통상적이다. 본 논문에서는 역회복 문제를 해결해 전류연속모드 구동하기 위해 기존 Si MOSFET보다 낮은 역회복 전하(Qrr)와 역회복 시간(Trr)를 가지는 SiC MOSFET을 이용하여 토템폴 역률 보상 회로를 구현하고 이를 시뮬레이션과 실험을 통해 검증했다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.45-45
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• 2009

This paper describes the formation of porous 3C-SiC by anodization. 3C-SiC thin films were deposited on p-type Si(100) substrates by APCVD using HMDS (Hexamethyildisilane: $Si_2(CH_3)_6$). UV-LED(380 nm) was used as a light source. The surface morphology was observed by SEM and the pore size was increased with increase of current density. Pore diameter of 70 ~ 90 nm was achieved at 7.1 $mA/cm^2$ current density and 90 sec anodization time. FT-IR was conducted for chemical bonding of thin film and porous 3C-SiC. The Si-H bonding was observed in porous 3C-SiC around wavenumber 2100 $cm^{-1}$. PL shows the band gap enegry of thin film (2.5 eV) and porous 3C-SiC (2.7 eV).

• Journal of Sensor Science and Technology
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• v.16 no.4
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• pp.319-323
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• 2007

This paper describes the mechanical characteristics of poly 3C-SiC thin films grown on Si wafers with thermal oxide. In this work, the poly 3C-SiC thin film was deposited by APCVD method using only Ar carrier gas and single precursor HMDS at $1100^{\circ}C$. The elastic modulus and hardness of poly 3C-SiC thin films were measured using nanoindentation. Also, the roughness of surface was investigated by AFM. The resulting values of elastic modulus E, hardness H and the roughness of the poly 3C-SiC film are 305 GPa, 26 GPa and 49.35 nm respectively. The mechanical properties of the grown poly 3C-SiC film are better than bulk Si wafers. Therefore, the poly 3C-SiC thin film is suitable for abrasion, high frequency and MEMS applications.

• Journal of Electrochemical Science and Technology
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• v.6 no.2
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• pp.35-49
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• 2015

Advanced polymeric binders with unique functions such as improvements in the electronic conduction network, mechanical adhesion, and mechanical durability during cycling have recently gained an increasing amount of attention as a promising means of creating high-performance silicon (Si) anodes in lithium-ion batteries with high energy density levels. In this review, we describe the key challenges of Si anodes, particularly highlighting the recent progress in the area of polymeric binders for Si anodes in cells.

• Korean Journal of Materials Research
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• v.25 no.5
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• pp.258-263
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• 2015

To fabricate porous SiC-Si composites for heating element applications, both SiC powders and Si powders were mixed and sintered together. The properties of the sintered SiC-Si body were investigated as a function of SiC particle size and/or Si particle contents from 10 wt% to 40 wt%, respectively. Porous SiC-Si composites were fabricated by Si bonded reaction at a sintering temperature of $1650^{\circ}C$ for 80 min. The microstructure and phase analysis of SiC-Si composites that depend on Si particle contents were characterized using scanning electron microscope and X-ray diffraction. The electrical resistivity of SiC-Si composites was also evaluated using a 4-point probe resistivity method. The electrical resistivity of the sintered SiC-Si body sharply decreased as the amount of Si addition increased. We found that the electrical resistivity of porous SiC-Si composites is closely related to the amount of Si added and at least 20 wt% Si are needed in order to apply the SiCSi composites to the heating element.

• Journal of the Korean Vacuum Society
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• v.19 no.2
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• pp.141-147
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• 2010

In this study, high-k oxide films like $Al_2O_3$, $TiO_2$, $HfO_2$ were deposited on Si, $SiO_2$/Si, GaAs wafers, and then the thermal conductivity was measured by using thermo-reflectance method which utilizes the reflectance variation of the film surface produced by the periodic temperature variation. The result shows that high-k oxide films with 50 nm thickness have high thermal conductivity of 0.80~1.29 W/(mK). Therefore, effectively dissipate the heat generated in the electric circuit such as CMOS memory device, and the heat transfer changes according to the micro grain size.

• Transactions of the Korean hydrogen and new energy society
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• v.24 no.6
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• pp.472-479
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• 2013

A free piston linear engine could be operated under HCCI combustion due to its variable compression ratios. To obtain HCCI combustion, the free piston linear engine needs a high compression ratio to achieve auto-ignition of the fuel/air mixture. In this study, an idea for obtaining a high compression ratio using the transition from SI combustion to HCCI combustion was proposed. The fuel used in this study is hydrogen, which is considered to be an environmentally friendly fuel. Besides, the effects of key parameters such as equivalence ratio (${\phi}$), load resistance ($R_L$) and intake temperature ($T_{in}$) on the SI-HCCI transition were numerically investigated. The simulation results show that the SI-HCCI transition is successful without any significant reduction of in-cylinder pressure as the intake temperature is increased from $T_{in}$=300K (SI mode) to $T_{in}$=450K (HCCI mode), while the load resistance and equivalence ratio are retained respectively at $R_L=120{\Omega}$ and ${\phi}$=0.6 in both SI mode and HCCI mode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.89-90
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• 2007

This paper presents the mechanical properties of 3C-SiC thin film according to 0, 7, and 10% carrier gas $(H_2)$ concentrations using Nano Indentation. When carrier gas $(H_2)$ concentration was 10%, it has been proved that the mechanical properties, elastic modulus and hardness, of 3C-SiC are the best of them. In the case of 10% carrier gas concentration, Young's modulus and Hardness were obtained as 367 GPa and 36 GPa, respectively. When the surface roughness according to $H_2$ concentrations was investigated by AFM (atomic force microscope), when $H_2$ concentration was 10%, the roughness of 3C-SiC thin was 9.92 nm, which is also the best of them. Therefore, in order to apply poly 3C-SiC thin film to MEMS applications, $H_2$ concentration's rate should increase to obtain better mechanical properties and surface roughness.

• Transactions on Electrical and Electronic Materials
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• v.9 no.5
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• pp.193-197
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• 2008

On the purpose of increasing resonant frequency without sacrificing quality factor as well as much decreasing dimensions, corrugated micro beam resonator based on polycrystalline 3C-SiC films is the applicable solution. In this work, appropriate corrugated structure is suggested to increase resonant frequency of resonators. Micro beam resonators based on 3C-SiC films which have a two-side corrugation along the length of beams were simulated by finite element method and compared to a same-size flat rectangular. With the dimension of 36x12x0.5 ${\mu}m^{3}$, the flat cantilever has resonant frequency of 746 kHz. Meanwhile, with this size but corrugation width of 6 ${\mu}m$ and depth of 0.4 ${\mu}m$, the corrugated cantilever reaches the resonant frequency at 1.252 MHz.