• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.7-9
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• 2007

Thin films of CrAlSiN were deposited on SKD11 tool steel substrate using Cr and AlSi cathodes by a cathodic arc plasma deposition system. The influence of process parameters on the deposited film properties were investigated. The oxidation characteristics of the films were studied at temperatures ranging from 800 and 1000+C up to 50 h in air. The films showed superhardness and good oxidation resistance..

• Journal of Sensor Science and Technology
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• v.22 no.3
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• pp.175-180
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• 2013

This paper describes the characteristics of cubic silicon carbide (3C-SiC) films grown on a carbonized Si(100) substrate, using hexamethyldisilane (HMDS, $Si_2(CH_3)_6$) as a safe organosilane single precursor in a nonflammable $H_2$/Ar ($H_2$ in Ar) mixture carrier gas by atmospheric pressure chemical vapor deposition (APCVD) at $1280^{\circ}C$. The growth process was performed under various conditions to determine the optimized growth and carbonization condition. Under the optimized condition, grown film has a single crystalline 3C-SiC with well crystallinity, small voids, low residual stress, low carrier concentration, and low RMS. Therefore, the 3C-SiC film on the carbonized Si (100) substrate is suitable to power device and MEMS fields.

• Journal of dental hygiene science
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• v.6 no.1
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• pp.19-22
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• 2006

To prepare basic data for oral health promotion of high school students through the survey of the recognition of oral health, a questionnaire survey was conducted for 369 students. Statistical analysis was conducted using the SPSS 11.5 with $x^2$-test, fisher's exact test, t-test. The obtained results were as follows 1. The average of the high school student's DMF rate, DMFT index and SiC Index was 87.53%, 3.36, 6.50. 2. The average of the high school student's oral health knowledge was more than 3, 70% of highschool did right toothbrushing. But toothbrushing frequency of student of more than 60% was less than 2 a day. 3. In SiC Index, Only 30% of high school students received oral health education and 80% of them recognized oral health manpower's education needs.

• Proceedings of the KIPE Conference
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• 2014.11a
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• pp.3-4
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• 2014

무선전력전송 회로는 부하의 변동에 따라 출력값을 알맞게 제어해 줄 필요가 있는데 송신부와 수신부 회로는 분리되어 있으므로 제어루프 또한 분리되어야 한다. 기존에는 주로 통신방식이나 부하측 변조를 이용한 1차측 제어를 사용하였다. 하지만 통신을 이용하는 경우 가격이 비싸고 시스템이 복잡하며, 부하측 변조 방식은 제어회로의 반응이 느리다는 단점이 있다. 본 논문은 2.5W급 전계결합형 무선전력회로에 대하여 LED 광학링크를 이용해 송신부의 스위칭 주파수를 제어하는 회로를 제안한다. 이 회로는 수신부에 포토다이오드와 연산증폭기를 내장하여 부하에 추가적인 배터리전원 없이 저가로 우수한 성능의 제어기를 구성할 수 있으며, 그 성능을 하드웨어로 검증하였다.

• Journal of Sensor Science and Technology
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• v.21 no.6
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• pp.425-428
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• 2012

This paper presents the fabrication and characterization of graphene based hydrogen sensors. Graphene was synthesized by annealing process of Ni/3C-SiC thin films. Graphene was transferred onto oxidized Si substrates for fabrication of chemiresistive type hydrogen sensors. Au electrode on the graphene shows ohmic contact and the resistance is changed with hydrogen concentration. Nanoparticle catalysts of Pd and Pt were decorated. Response factor and response (recovery) time of hydrogen sensors based on the graphene are improved with catalysts. The response factors of pure graphene, Pt and Pd doped graphenes are 0.28, 0.6 and 1.26, respectively, at 50 ppm hydrogen concentration.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.135.1-135.1
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• 2014

Silicon nanoparticles can be synthesized in a standard radio-frequency glow discharge system at low temperature (${\sim}200^{\circ}C$). Plasma synthesis of silicon nanoparticles, initially a side effect of powder formation, has become over the years an exciting field of research which has opened the way to new opportunities in the field of materials deposition and their application to optoelectronic devices. Hydrogenated polymorphous silicon (pm-Si:H) has a peculiar microstructure, namely a small volume fraction of plasma synthesized silicon nanoparticles embedded in an amorphous matrix, which originates from the unique deposition mechanism. Detailed discussion on plasma synthesis of silicon nanoparticles, growth mechanism and photovoltaic application of pm-Si:H will be presented.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.71-72
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• 2008

In this paper, the effect of thermal annealing on surface acoustic wave (SAW) properties of aluminum nitride (AlN) films were described. The films were fabricated on Si substrates by using Pulsed Reactive Magnetron Sputtering System. The SAW properties of $600^{\circ}C$-annealed AlN films were better than those of both $900^{\circ}C$-annealed AlN films and as-deposited ones. Their SAW velocities (Raleigh mode) and insertion losses were about 5212 m/s and 16.19 dB at $600^{\circ}C$ with the wavelength of $40{\mu}m$. The dependence of characteristics of AlN films on annealing conditions were also evaluated by using Fourier Transform-Infrared Spectroscopy (FT-IR) Spectrums and Atomic Force Microscopy (AFM).

• Journal of Sensor Science and Technology
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• v.19 no.5
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• pp.337-341
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• 2010

In this work, the nanocrystalline ZnO/polycrystalline(poly) aluminum nitride(AlN)/ Si-layered structure was fabricated for humidity sensor applications based on surface acoustic wave(SAW). The ZnO film was used as a sensitive material layer. The ZnO and AlN(0002) were deposited by a sol-gel process and a pulse reactive magnetron sputtering, respectively. The ZnO sensitive films coated on AlN have a hexagonal wurtzite structure after the thin films annealed at $400^{\circ}C$, $500^{\circ}C$ and $600^{\circ}C$. The surface of the film exhibits sponginess and a nanometer particle size(below 50 nm). The largest shift in the frequency response was at approximately 200 kHz(the relative humidity: 10 %~90 %) for the structure annealed at $400^{\circ}C$. The effect of the change in the environmental temperature on the frequency response of the SAW humidity sensor was also investigated.

• Journal of the Korean Society for Heat Treatment
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• v.25 no.5
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• pp.239-243
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• 2012

$SnO_2$ thin films were prepared on the Si substrate by radio frequency (RF) magnetron sputtering and then post deposition vacuum annealed to investigate the effect of annealing temperature on the structural properties and hydrogen gas sensitivity of the films. The films that annealed at $300^{\circ}C$ show the higher sensitivity than the other films annealed at $150^{\circ}C$. From atomic force microscope observation, it is supposed that post deposition annealing promotes the rough surface and also, increase gas sensitivity of $SnO_2$ films for hydrogen gas. These results suggest that the vacuum annealed $SnO_2$ thin films at optimized temperatures are promising for practical high-performance hydrogen gas sensors.

• Journal of Environmental Science International
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• v.14 no.6
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• pp.605-611
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• 2005

The aim of this study was to analyze the local distribution of the heavy metal concentration in Daegu and Ulsan which were divided into the residual areas, the traffic dense areas and the industrial areas. The Inductively Coupled Plasma(ICP) was used to analyze heavy metals, such as As, Cr, Hg, Zn, Cd, Pb, Cu and minor metals, such as Fe, Si, Mg, Ca, AI, Na, K. The results of this analysis showed that the content of heavy metals which was classified by districts in Daegu and Ulsan was the highest in the industrial areas followed by the traffic dense areas and the residual areas. Compared to the level of heavy metals of national and local soil survey network in 2003, contamination of heavy metals in Daegu was lower than national average. However, the content of Cd, As, Zn in Ulsan was respectively 13.38 times, 472 times and 2.65 times higher than national average contamination. In addition, compared to the soil pollution level of the environmental protection law, contamination of all areas in Daegu was lower. But the content of As at the industrial areas in Ulsan was 10.71 times higher than standard of soil pollution and 4.28 times higher than standard of measures against soil contamination.