• Applied Microscopy
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• v.44 no.2
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• pp.74-78
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• 2014

Dislocation density and distribution in epitaxial GaAs layer on Si are evaluated quantitatively and effectively using image processing of transmission electron microscopy image. In order to evaluate dislocation density and distribution, three methods are introduced based on line-intercept, line-length measurement and our coding with line-scanning method. Our coding method based on line-scanning is used to detect the dislocations line-by-line effectively by sweeping a thin line with the width of one pixel. The proposed method has advances in the evaluation of dislocation density and distribution. Dislocations can be detected automatically and continuously by a sweeping line in the code. Variation of dislocation density in epitaxial GaAs films can be precisely analyzed along the growth direction on the film.

• Journal of Korea Foundry Society
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• v.15 no.4
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• pp.377-387
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• 1995

Partial squeeze die casting is a special die casting process which combines squeeze technique to conventional die casting. The influence of squeeze pressure $(1500-3000kg/cm^2)$ and time-lags(0.5-2.0sec) on defect control, density and microstructure of ADC12 alloy die casts has been studied by appling partial squeeze die casting to air compressure front housing production. Defect free, maximum density of $2.736kg/cm^3$ with sound microstructure of ADC12 alloy die cast has been obtained by partial squeeze die casting technique at the pressure of $2000-2500kg/cm^2$ and time-lags of 1.0-2.0sec.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.576-580
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• 2013

We investigate the enhanced effects of asymmetry ratio variations of the source and drain area in silicon (Si) field-effect transistor (FET). Photoresponse according to the variation of asymmetry difference between the width of source and drain are obtained by using the plasmonic terahertz (THz) wave detector simulation based on technology computer-aided design (TCAD) with the quasi-plasma 2DEG model. The simulation results demonstrate the potential of Si FETs with asymmetric source and drain structures as the promising plasmonic THz detectors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.235-235
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• 2009

This paper describes the influence of a polycrystalline (poly) 3C-SiC buffer layer on the surface acoustic wave (SAW) properties of poly aluminum nitride (AlN) thin films by comparing the center frequency, insertion loss, the electromechanical coupling coefficient ($k^2$), andthetemperaturecoefficientoffrequency(TCF) of an IDT/AlN/3C-SiC structure with those of an IDT/AlN/Si structure, The poly-AlN thin films with an (0002)-preferred orientation were deposited on a silicon (Si) substrate using a pulsed reactive magnetron sputtering system. Results show that the insertion loss (21.92 dB) and TCF (-18 ppm/$^{\circ}C$) of the IDT/AlN/3C-SiC structure were improved by a closely matched coefficient of thermal expansion (CTE) and small lattice mismatch (1 %) between the AlN and 3C-SiC. However, a drawback is that the $k^2(0.79%)$ and SAW velocity(5020m/s) of the AlN/3C-SiC SAW device were reduced by appearing in some non-(0002)AlN planes such as the (10 $\bar{1}$ 2) and (10 $\bar{1}$ 3) AlN planes in the AlN/SiC film. Although disadvantages were shown to exist, the use of the AlN/3C-SiC structure for SAW applications at high temperatures is possible. The characteristics of the AlN thin films were also evaluated using FT-IR spectra, XRD, and AFM images.

• Journal of The Geomorphological Association of Korea
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• v.23 no.1
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• pp.61-75
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• 2016

This study aims to reconstruct sea level change and paleogeomorphology since the middle Holocene by diatom analysis and 14C-dating from the sedimentary facies of three trenches on alluvial plain of Taehwa River, Taehwa-dong, Ulsan-si, South Korea. The Taewha-dong area was a narrow bay located between Bangeojin and eatuary of Taehwa River was a narrow bay which has been detached from the open sea during middle Holocene. Taewa-dong area at bay area was developed into alluvial plain by the sediments had been come from the Taewa river basin. The sea level change during the middle Holocene effected on the development of Taewha-dong alluvial plain and its information is included in the sediment facies.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.8
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• pp.651-654
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• 2010

This paper describes the thermal and mechanical properties of doped thin film 3C-SiC and porous 3C-SiC. In this work, the in-situ doped thin film 3C-SiC was deposited by using atmospheric pressure chemical vapor deposition (APCVD) method at $120^{\circ}C$ using single-precursor hexamethyildisilane: $Si_2(CH_3)_6$ (HMDS) as Si and C precursors. 0~40 sccm $N_2$ gas was used as doping source. After growing of doped thin film 3C-SiC, porous structure was achieved by anodization process with 380 nm UV-LED. Anodization time and current density were fixed at 60 sec and 7.1 mA/$cm^2$, respectively. The thermal and mechanical properties of the $N_2$ doped porous 3C-SiC was measured by temperature coefficient of resistance (TCR) and nano-indentation, respectively. In the case of 0 sccm, the variations of TCR of thin film and porous 3C-SiC are similar, but TCR conversely changed with increase of $N_2$ flow rate. Maximum young's modulus and hardness of porous 3C-SiC films were measured to be 276 GPa and 32 Gpa at 0 sccm $N_2$, respectively.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.12a
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• pp.320-320
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• 2003

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.354.1-354.1
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• 2016

Nanoporous gold (NPG) is a very promising material in various fields such as sensor, actuator, and catalysis because of its high surface to volume ratio and conducting nature. In this study, we fabricated a NPG based amperometric sensor on a glass substrate by means of co-sputtering of Au and Si. During the sputtering process, we found the optimum conditions for heat treatment to reduce the residual stress and to improve adhesion between NPG films and the glass substrate. Subsequently, Si was selectively etched from Au-Si alloy by KOH solution, which forms nanoporous structures. Scanning electron microscopy (SEM) and auger electron spectroscopy (AES) were used to estimate the structure of NPG films and their composition. By employing appropriate heat treatments, we could make very stable NPG films. We tested the performance of NPG sensor with aniline molecules, which shows high sensitivity for sensing low concentration of aniline.

• Journal of the Korean Electrochemical Society
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• v.21 no.1
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• pp.12-20
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• 2018

To solve low cycle efficiency of the zinc anode in Zn-air batteries by corrosion, this study examined the effects of Al as a cathodic protection additive to Zn. The Al-mixed Zn anodes were produced by mixing Zn and Al powder (1, 2, and 3 wt. %). To compare the effects of the Al additive, Si was selected under the same conditions. The morphology and elemental composition of the additives in the Zn were characterized by scanning electron microscopy, energy dispersive X-ray spectroscopy, and inductively coupled plasma - mass spectrometry. The anti-corrosion effects of the Al and Si-mixed Zn anodes were examined by linear polarization. Cyclic voltammetry and charge-discharge tests were conducted to evaluate the electrochemical performance of the Al and Si-mixed Zn anodes. As a result, the Al-mixed Zn anodes showed highest corrosion resistance and cycling performance. Among these, the 2 wt.% Al-mixed Zn anodes exhibited best electrochemical performance.

• Journal of the Korean Magnetic Resonance Society
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• v.8 no.1
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• pp.47-54
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• 2004

We have measured the linewidth and g-factor of EPR signals of the single crystal Mn$_{x}$Si$_{1-x}$ as a function of Mn-composition (0.4$\leq$x$\leq$0.9). We have investigated the linewidth of Mn$_{0.49}$Si$_{0.51}$ as a function of temperature (100 $\leq$ T $\leq$ 300 K). From these results EPR linewidth equation could be fitted for experimental data of EPR linewidth. This type of equation is similar to the shape of EPR linewidth of DMS (dulite magnetic semiconductor).or).r).