• Title/Summary/Keyword: UXGA

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Design of a Motion Adaptive LCD controller for image enlargement (영상 확대를 위한 움직임 적응형 LCD 제어기 설계)

  • 이승준;권병헌;최명렬
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.40 no.3
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    • pp.109-116
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    • 2003
  • In this paper. we Propose an UXGA class LCD controller for controlling the LCD panel. The proposed controller supports the full screen display using GCD between input and output resolutions. The proposed LCD controller includes the motion detector based on median filter which can detect the motion of input image for the enhancement of a image quality. Also, it divides the motion into 3 stages such as still, semi-moving and moving, and uses the different interpolation algorithms according to the degree of motion. In order to evaluate the performance of the proposed interpolation algorithm, we use PSNR method and compare the conventional algorithm by using computer simulation. For the proposed motion detection algorithm, we use a visual verification and the estimation of pixel changes. The proposed LCD controller has been designed and verified by VHDL. It has been synthesized using Xilinx VirtexE FPGA.

Development of Fast Response Time (16msec) in IPS Mode

  • Lim, C.S.;Lee, J.H.;Oh, C.H.;Choi, H.C.;Lee, Seung-Eun;Jin, Min-Ok;Klasen-Memmer, M.;Tarumi, K.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.68-71
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    • 2003
  • To be able to show moving images without visual problems like blurring and tailing, the response time of liquid crystal display (LCDs) must be improved. In this paper we will discuss our progress in improving the response time by optimizing the cell configuration and the use of new liquid crystal mixtures. A 20.1inch diagonal UXGA IPS TFT-LCD has been developed having a response time as fast as l-frame time (16msec) for white-black operation and less than 16msec in all gray levels without applying ODC (Over Driving Circuit). This is very important because one of the technology to reduce motion blurring, the use of scanning backlight is conditioned by 16msec for all grays. The excellent gray-to-gray response can be explained by virtue of fundamental characteristics of S-IPS mode and makes a good contrast with the results of VA mode.

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A Novel Air-Bridge Type Gate-Data Line Inter-Crossing to Reduce Signal Delay for Large Size AMLCD (대면적 AMLCD의 신호 지연 감소를 위해 Air-gap을 갖는 게이트-데이터 라인 교차 구조)

  • Park, Jin-Woo;Kang, Ji-Hoon;Lee, Min-Cheol;Han, Min-Koo
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.48 no.12
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    • pp.768-772
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    • 1999
  • A new TFT-LCD panel with air-bridge type gate to data line inter-crossing has been proposed and its characteristics have been measured. The proposed structure has air-gap between gate and data line inter-crossing. This air-bridge TFT-LCD panel has very small capacitance between gate and data line. The new panes structure achieves 9 times fast signal propagation compared with conventional panel, which enables to have enough design margin for 20-inch diagonal and larger size UXGA panel. We have examined thermal and mechanical durability of new panel to verify applicability for commercial AMLCD production. After TEOS and polyimide passivation, this panel withstood a thermal stress at $250^{\circ}C$ and a mechanical stress during the rubbing process.

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Electrochemical Characteristics of AIZr Thin Film for TFT-LCD Bus Line (TFT-LCD 버스선을 위한 AIZr 합금 박막의 전기 .화학적 특성에 관한 연구)

  • 김장권;김동식;이종호;정관수
    • Proceedings of the IEEK Conference
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    • 2001.06b
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    • pp.49-52
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    • 2001
  • The electrochemical characteristics of Alalloy thin film with low impurity concentrations AIZr deposited by using do magnetron co-sputtering deposition are investigated for the applications as gate bus line in the TFT-LCD panel. AlZr thin films were deposited various atomic percent of Zr. For increasing Zr atomic percent the hillock density was decreased and the resistivity was increased. The deposited thin films show the decrease of resistivity and the increase of grain size after the RTA at 300 $^{\circ}C$for 20 min.. Moreover, the resistivity of AIZr does not show appreciable grain size dependence after RTA. It is concluded that the decrease of resistivity after RTA is due to the increase of grain size. The annealed AIZr(at.0.9%) is found to be hillock free. The electrode potentials of AIZr were less than ITO's (-1.4V) and the etching rate of AIZr(at.0.9%) was 3.8587ng/sec. in KOH(10%) solution. Caculation results reveal that the AIZr(at.0.9%) thin film can be applicable to gate line of 25" UXGA class TFT-LCD panels and can not be applicable to data line.line.

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