• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.5
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• pp.294-300
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• 2017

$TeO_x$ thin films were deposited at various $O_2$/Ar gas-flow ratios by a reactive RFmagneton sputtering technique from $TeO_2$ and Te targets. X-ray diffraction (XRD) results revealed that the $TeO_x$ thin films were amorphous. The structure and chemical composition of the $TeO_x$ thin films were investigated by fourier transform infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS). The optical characteristics of the $TeO_x$ thin films were investigated by an Ellipsometer and a UV-VIS-NIR spectrophotometer. According to the $O_2$/Ar gas-flow ratios, the atomic composition ratio of $TeO_x$ thin films was divided into two regions(x=1-2, 2-3). Different optical characteristics were shown in each region. With an increasing $O_2$/Ar gas-flow ratio, the refractive index of the $TeO_x$ thin films decreased and the optical bandgap of the films increased.

• Journal of Surface Science and Engineering
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• v.51 no.2
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• pp.126-132
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• 2018

SnS thin films with different substrate temperatures ($150 {\sim}300^{\circ}C$) as process parameters were grown on soda-lime glass substrates by RF magnetron sputtering. The effects of substrate temperature on the structural and optical properties of SnS thin films were investigated by X-ray diffraction (XRD), Raman spectroscopy (Raman), field-emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS), and Ultraviolet-visible-near infrared spectrophotometer (UV-Vis-NIR). All of the SnS thin films prepared at various substrate temperatures were polycrystalline orthorhombic structures with (111) planes preferentially oriented. The diffraction intensity of the (111) plane and the crystallite size were improved with increasing substrate temperature. The three major peaks (189, 222, $289cm^{-1}$) identified in Raman were exactly the same as the Raman spectra of monocrystalline SnS. From the XRD and Raman results, it was confirmed that all of the SnS thin films were formed into a single SnS phase without impurity phases such as $SnS_2$ and $Sn_2S_3$. In the optical transmittance spectrum, the critical wavelength of the absorption edge shifted to the long wavelength region as the substrate temperature increased. The optical bandgap was 1.67 eV at the substrate temperature of $150^{\circ}C$, 1.57 eV at $200^{\circ}C$, 1.50 eV at $250^{\circ}C$, and 1.44 eV at $300^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.566-566
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• 2012

그래핀(Graphene)은 모든 탄소 동소체의 기본구성 요소로 2 차원 결정구조를 가지며, 양자홀 효과(quantum Hall effect), 뛰어난 열 전도도, 고 탄성, 광학적 투과성 등과 같은 탁월한 물리적 성질을 보이는 물질이다. 이러한 그래핀의 우수한 특성은 전계 효과 트랜지스터(field effect transistor), 화학/바이오 센서, 투명 전극(transparent electrode) 등의 다양한 전자소자를 개발하는 응용 가능하다. 그 중, 그래핀 투명전극의 제조는 가장 응용가능성이 높은 분야이다. 현재 투명전극 물질로는 인듐-주석 산화물(indium tin oxide; ITO)가 널리 이용되고 있으나, 인듐의 고갈로 인한 공급부족 문제 및 고 생산비용, 휘어지지 않는 취성 등의 단점을 지니고 있다. 따라서, 우수한 광학적 투과성과 전기전도성을 지닌 그래핀이 ITO의 대체 물질로서 각광받고 있다.[1-5] 본 연구에서는 그래핀의 투명전도필름의 응용을 위해 면저항을 낮추기 위한 방법으로 화학적 도핑(doping)을 이용하였다. 그래핀은 구리(copper; Cu) 호일을 촉매로 사용하여 열 화학증착법(Thermal Chemical Vapor Deposition)을 이용하여 합성하였다. 합성된 그래핀은 PMMA(Poly(methyl methacrylate)) 전사법을 이용하여 산화실리콘(SiO2) 기판에 전사 후, 염화은(AgCl)과 클로로벤젠(C6H5Cl)으로 만든 콜로이드(colloid) 용액에 디핑(dipping)하여 그래핀에 은 입자를 도핑 하였다. 그 결과, 은 입자 도핑 농도에 따라 면저항이 감소하는 양상을 보였다. 제작된 그래핀 투명전도성 필름의 투과도는 자외선-가시광선-근적외선 분광법(UV-Vis-NIR spectroscopy)를 이용하여 측정하였고, 라만 분광법(Raman spectroscopy)을 통해 그래핀 필름의 질적 우수성과 성장 균일도를 조사하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.56-56
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• 2010

Single-walled carbon nanotubes (SWCNTs) have attracted much attention as a promising material for transparent conducting films (TCFs), due to their superior electrical conductivity, high mechanical strength, and complete flexibility as well as their one-dimensional morphological features of extremely high length-to-diameter ratios. This study investigated three kinds of SWCNTs with different purities: as-produced SWCNTs (AP-SWCNTs), thermally purified SWCNTs (TH-SWCNTs), thermally and acid purified SWCNTs (TA-SWCNTs). The purity of each SWCNT sample was assessed by considering absorption peaks in the semiconducting ($S_{22}$) and metallic ($M_{11}$) tubes with UV-Vis NIR spectroscopy and a metal content with thermogravimetric analysis (TGA). The purity increased as proceeding the purification stages from the AP-SWCNTs through the thermal purification to the acid purification. The samples containing different contents of SWCNTs were dispersed in water using sodium dodecyl benzensulfate (SDBS). Aqueous suspensions of different purities of SWCNTs were prepared to have similar absorbances in UV-Vis absorption measurements so that one can make the TCFs possess similar optical transmittances irrespective of the SWCNT purity. Transparent conductive SWCNT networks were formed by spraying an SWCNT suspension onto a poly(ethyleneterephthalate) (PET) substrate. As expected, the TCFs fabricated with AP-SWCNTs showed very high sheet resistances. Interestingly, the TH-SWCNTs gave lower sheet resistances to the TFCs than the TA-SWCNTs although the latter was of higher purity in the SWCNT content than the former. The TA-SWCNTs would be shortened in length and be more bundled by the acid purification, relative to the TH-SWCNTs. For both purified (TH, TA) samples, the subsequent nitric acid ($HNO_3$) treatment greatly lowered the sheet resistances of the TCFs, but almost eliminated the difference of sheet resistances between them. This seems to be because the electrical conductivity increased not only due to further removal of surfactants but also due to p-type doping upon the acid treatment. The doping effect was likely to overwhelm the effect of surfactant removal. Although the nitric acid treatment resulted in the similar. electrical properties to the two samples, the TCFs of TH-SWCNTs showed much lower sheet resistances than those of the TA-SWCNTs prior to the acid treatment.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.393-393
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• 2012

Optically active nanostructures such as subwavelength moth-eye antireflective structures or surface enhanced Raman spectroscopy (SERS) active structures have been demonstrated to provide the effective suppression of unwanted reflections as in subwavelength structure (SWS) or effective enhancement of selective signals as in SERS. While various nanopatterning techniques such as photolithography, electron-beam lithography, wafer level nanoimprinting lithography, and interference lithography can be employed to fabricate these nanostructures, roll-to-roll (R2R) nanoimprinting is gaining interests due to its low cost, continuous, and scalable process. R2R nanoimprinting requires a master to produce a stamp that can be wrapped around a quartz roller for repeated nanoimprinting process. Among many possibilities, two different types of mask can be employed to fabricate optically active nanostructures. One is self-assembled Au nanoparticles on Si substrate by depositing Au film with sputtering followed by annealing process. The other is monolayer silica particles dissolved in ethanol spread on the wafer by spin-coating method. The process is optimized by considering the density of Au and silica nano particles, depth and shape of the patterns. The depth of the pattern can be controlled with dry etch process using reactive ion etching (RIE) with the mixture of SF6 and CHF3. The resultant nanostructures are characterized for their reflectance using UV-Vis-NIR spectrophotometer (Agilent technology, Cary 5000) and for surface morphology using scanning electron microscope (SEM, JEOL JSM-7100F). Once optimized, these optically active nanostructures can be used to replicate with roll-to-roll process or soft lithography for various applications including displays, solar cells, and biosensors.

• Current Photovoltaic Research
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• v.8 no.1
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• pp.33-38
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• 2020

Single-phased SnS thin films have been prepared by RF magnetron sputtering at various deposition pressures. The effect of deposition pressure on the structural and optical properties of polycrystalline SnS thin films was studied using X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS) and ultraviolet-visible-near infrared (UV-Vis-NIR) spectrophotometer. The XRD analysis revealed the orthorhombic structure of the SnS thin films oriented along the (111) plane direction. As the deposition pressure was increased from 5 mTorr to 15 mTorr, the intensity of the peak on the (111) plane increased, and the intensity decreased under the condition of 20 mTorr. The binding energy difference at the Sn 3d_5/2 and S 2p_3/2 core levels was about 324.5 eV, indicating that the SnS thin film was prepared as a pure Sn-S phase. The optical properties of the SnS thin films indicate the presence of direct allowed transitions with corresponding energy band gap in the rang 1.47-1.57 eV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.316-316
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• 2008

Using an evaporation method, $SiO_2$ was deposited as a buffer layer between a flexible PET substrate and a ITO film deposited by DC magnetron sputtering and electro-optical properties were investigated with thickness variance of $SiO_2$ layers. After coating a $SiO_2$ layer and a ITO film, the ITO/$SiO_2$/PET was heated up to $200^{\circ}C$ and the resistivity and the transmittance were measured by hall effect measurement system and UV/VIS/NIR spectroscopy. As a result of depositing a $SiO_2$ buffer layer, the resistivity increased and the transmittance and adhesion property were enhanced than ITO films with no buffer layers and the resistivity was lowered as $SiO_2$ thickness increased from 50 $\AA$ to 100 $\AA$. It was found that the transmittance was independent of annealing temperature variance in $150^{\circ}C{\sim}200^{\circ}C$ and the resistivity decreased as the temperature increased and especially decreasing rate of the resistivity was higher as the buffer layer thickness was thinner. So under optimized depositing of $SiO_2$ buffer layers and post-annealing of ITO/$SiO_2$/PET, ITO films with enhanced adhesion, electro-optical properties can obtained.

• Journal of Electrochemical Science and Technology
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• v.3 no.2
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• pp.57-62
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• 2012

In this report, we demonstrate that the longitudinal localized surface plasmon resonance mode can be suppressed when the nanorods were in dumbbell shape. The seed nanorods were synthesized by electrochemical deposition of metals into the pores of anodic aluminum oxide templates. The dumbbell-like nanorods were grown from seed Au-Ni-Au nanorods by a rate-controlled seed-mediated growth strategy. The selective deposition of Au atoms onto Au blocks of Au-Ni-Au nanorods produced larger diameter of Au nanorods with bumpy surface resulting in dumbbell-like nanorods. The morphology of nanorods depended on the reduction rate of $AuCl_4^-$, slow rate producing smooth surface of Au nanorods, but high reduction rate producing bumpy surface morphology. Through systematic investigation into the UV-Vis-NIR spectroscopy, we found that the multiple localized surface plasmon resonance (LSPR) modes were available from single-component Au nanorods. And, their LSPR modes of Au NRs with bumpy surface, compared to the smooth seed Au NRs, were red-shifted, which was obviously attributed to the increased electron oscillation pathways. While the longitudinal LSPR modes of smoothly grown Au NRs were blue-shifted except for a dipole transverse LSPR mode, which can be interpreted by decreased aspect ratio. In addition, dumbbell-like nanorods showed an almost disappeared longitudinal LSPR mode. It reflects that the plasmonic properties can be engineered using complex nanorods structure.

• Korean Journal of Materials Research
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• v.25 no.2
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• pp.90-94
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• 2015

We prepared 8 samples of non-silver and silver-added master alloys containing silicon to confirm the existence of nickel-silicides. We then prepared products made of 14K and 18K white gold by using the prepared master alloys containing 0.25, 0.35, and 0.50 wt% silicon to check for nickel release. We then employed the EN 1811 testing standard to investigate the nickel release of the white gold products, and we also confirmed the color of the white gold products with an UV-VIS-NIR-color meter. We observed $NiSi_x$ residue in all master alloys containing more than 0.50 wt% Si with EDS-nitric acid etching. For the white gold products, we could not confirm the existence of $NiSi_x$ through XRD after aqua-regia etching. In the EN 1811 test, only the white gold products with 0.25 wt% silicon master alloys successfully passed the nickel release regulations. Moreover, we confirmed that our white gold products showed excellent Lab indices as compared to those of commercial white gold ones, and the silver-added master alloys offered a larger L index. Our results indicate that employing 0.25 wt% silicon master alloys might be suitable for white gold products without nickel-silicide defects and nickel release problems.

• Korean Journal of Materials Research
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• v.20 no.5
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• pp.278-288
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• 2010

High Pressure High Temperature (HPHT) treatment can significantly change the color of diamonds. We studied the variation of the optical properties according to the nitrogen arrangement in natural brown diamonds of various types (type IaAB, type IaB, type IaA > B, type IaA < B, IaA = B) after HPHT treatment. The diamonds with different arrangements of nitrogen were annealed at temperatures in the range $1700-1800^{\circ}C$ under a stabilizing pressure of 5 GPa. HPHT treated samples were analyzed using UV-Vis-NIR, FT-IR, and PL spectroscopy. The absorption and luminescence spectra were measured to compare the variations of nitrogen arrangement in the natural brown diamonds before and after HPHT treatment. After HPHT treatment, the brown coloration in all types of diamonds was reduced and a decrease in the peaks related to the A-aggregate of nitrogen was more predominant than the B-aggregate. Furthermore, the peaks related to N3 (415.4 nm), H4 (496.4 nm), and platelet decreased and the peaks related to H3 (503.2 nm) and G-band increased after HPHT treatment. In conclusion, spectroscopic analysis of natural brown diamonds after HPHT treatment showed that a yellow color was produced by absorption in the H3 centers and a green color was generated by interaction between absorptions of the H3 and H2 centers.