• 한국전기전자재료학회논문지
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• 제22권5호
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• pp.419-424
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• 2009

ZnO films doped with different contents of indium ($0.1{\sim}10$ at.%) were deposited on Si (111) substrate by Pulsed Laser Deposition (PLD). The structural, electrical and optical properties of the films were investigated using XRD, AFM, Hall and PL measurement. Results showed that un-doped ZnO film had (002) plane as the c-axis orientated growth, whereas indium doped ZnO films exhibited the peak of (002) and the weak (101) plane. In addition, in the indium doped ZnO films, the electron concentration is ten times higher than that of un-doped ZnO film, while the resistivity is ten times lower than that of un-doped ZnO film. The indium doped ZnO films have UV emission about 380 nm and show a red shift with increasing contents of indium. The I-V curve of the fabricated diode show the typical diode characteristics and have the turn on voltage of about 2 V.

• 해양환경안전학회지
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• 제3권2호
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• pp.23-31
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• 1997

The results of high speed photography, acoustic emission detection and plasma UV radiation intensity measurement during CO2 laser welding of stainless steel 304 are presented. Video images with high spatial and temporal resolution allowed to observe the melt dynamics and keyhole evolution. The existence of a high speed melt flow which originated from the part of weld pool and flowed along the sides wall of keyhole was confirmed by the slag motion on the weld pool. the characteristic frequencies of flow instability and keyhole fluctuations at different welding speed were measured and compared with the results of Fourier analyses of temporal acoustic emission (AE) and light emission (LE) spectra. The experimental results were compared with the newly developed numerical model of keyhole dynamics. (The model is based on the assumption that the propagation of front part of keyhole into material is due to the melt ejection driven by laser induced surface evaporation.) The calculations predict that a high speed melt flow is induced at the front part of keyhole when the sample travel speed exceeds several 10mm/s. The numerical analysis also shows the hump formation on the front keyhole wall surface. Experimentally observed melt behavior and transformation of the AE and LE spectra with variation of welding speed are qualitatively in good agreement with the model predictions.

• Bulletin of the Korean Chemical Society
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• 제21권6호
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• pp.583-587
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• 2000

Depletion kinetics of ground state FeO molecules by $0_2$, $N_2O$ and $N_2$ has been studied at room temperature. The ground state FeO molecules were generated by photolysis of a $Fe$(CO)_5$/M(O_2$, $N_2O)/He$ mixture using an unfocused weak UV laser beam. The formation of ground state FeO molecules was identified by a laser-induced fluorescence (LIF) method. The intensity distribution of those undisturbed rotational lines suggests that the rotational temperature of the ground state FeO molecules is lower than room temperature. The LIF intensities of FeO molecules at different partial pressures of $0_2$, $N_2O$ and $N_2$ were monitored as a function of the time delay between the photolysis and probe laser pulses to obtain the depletion rate constants for the ground state FeO. They were 1.7+ 0.2x $10^{-12}$, 4.8 $\pm0.4$ x $10^{-12}$, and $1.4\pm$ 0.2x $10^{-12}cm^3$molecule^{-1}s^{-1}$$ by $0_2$, $N_20$, and $N_2$, respectively.

• Bulletin of the Korean Chemical Society
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• 제33권2호
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• pp.625-628
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• 2012

We investigated the interaction between polyynes (linear carbon chains) and various metal nanoparticles (Ag, Au, and Cu) to provide insight into the optical properties of metal-polyynes systems prepared by different experimental techniques. Polyynes were produced by laser ablation in deionized water, metal nanoparticles solutions, and copper chloride solution. Metal nanoparticles complexes with polyynes were analyzed by Raman, surface-enhanced Raman scattering, and UV-vis spectroscopy.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.462-487
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• 1996

We report on the fourth and fifth harmonics generations of Nd:YAG laser radiation realized in CsLiB6O10(CLBO). The values of 500 mJ and 230 mJ at 266 nm and 213 nm were obtained from 2200 mJ of fundamental energy. Doping of CLBO has been carried out and the Al doping was found to give rise to an enhancement of mechanical and chemical properties.

• 한국광학회:학술대회논문집
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• 한국광학회 1991년도 제6회 파동 및 레이저 학술발표회 Prodeedings of 6th Conference on Waves and Lasers
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• pp.81-87
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• 1991

A design of a four-mirror optical system for submicron lithography using KrF excimer laser beam(λ=248nm) is presented. By using the third order aberration theory, analytic solutions for a telecentric, flat-field, and anastigmatic four-spherical-mirror system (reduction magnification 5$\times$) are found. Aspherization is carried out to the spherical mirror surfaces in order to reduce the residual higher order aberrations and vignetting effect. Finally we obtain a reflection system useful in submicron lithographic application.

• 소성∙가공
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• 제13권3호
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• pp.205-210
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• 2004

The waveguide Bragg gratings have been fabricated by the phase-mask method. An excimer laser with maximum 600mJ output pulse energy and uniform phase masks have been used. Hydrogen loading is often used for enhancing the uv photosensitivity of the core, however, the resultant gratings show significant aging effect. In the present study, high temperature thermal annealing process has been investigated to obtain thermal gratings and process parameters are deduced.

• 한국광학회:학술대회논문집
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• 한국광학회 2000년도 하계학술발표회
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• pp.108-109
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• 2000

현재 많은 종류의 레이저가 학술적으로나 산업계에서 다양하게 사용되고 있다. 그리고 그 중에서도 자외선 레이저의 필요성이 한층 강조되고 있는 시점이다. 사용되고 있는 자외선 레이저는 Eximer 레이저, Nd:YAG의 제3고조파, 다른 레이저로 펌핑한 색소 레이저등이 그 주류를 이루고 있다. 하지만 이들 레이저들은 값이 아주 고가이거나 그 출력이 매우 낮아 새로운 방식의 레이저를 요구하고 있다. 그래서 본 실험실에서는 여러 용도로 사용 가능한 펄스형 고출력 색소 레이저를 개발하고 있다. (중략)

• 대한기계학회논문집B
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• 제38권10호
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• pp.831-835
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• 2014

온도를 달리하여 수열합성 시킨 두 ZnO nanostructure 의 자외선 검출 소자에 대해 표면 결함과 기판과의 계면 결함의 상대적인 영향을 분석했다. 실험은 laser 가 인가된 상태에서 bias voltage sweep rate을 조절하여, 그에 따른 전류-전압 곡선을 통해 이루어졌다. 수열 성장이 적게 된 ZnO nanostructure의 경우 405, 355 nm laser 인가시, bias voltage sweep rate 을 느리게 할 수록, 전류-전압 기울기가 낮아졌으며, 대조적으로 성장이 크게 된 시료의 경우 기울기가 높아졌다. 이에 대한 이유는 계면과 표면 결함 영향의 차이로 발생됨이 고려됐다. 이와 같이 laser 가 인가된 상태에서 bias voltage sweep rate 에 따른 전류-전압 곡선 분석 실험은 M-S-M (Metal-Semiconductor-Metal) 구조를 갖는 수열 성장된 ZnO 의 표면 및 계면 결함을 관찰하는데 도움을 줄 것으로 생각된다.

• Design & Manufacturing
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• 제15권4호
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• pp.65-71
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• 2021

In the early days of laser invention, it was simply used as a measuring tool, but as lasers became more common, they became an indispensable processing tool in the industry. Short-wavelength lasers are used to make patterns on wafers used in semiconductors depending on the wavelength, such as CO2 laser, YAG laser, green laser, and UV laser. At first, the hole of the PCB board mainly used for electronic parts was not thin and the hole size was large, so a mechanical drill was used. However, in order to realize product miniaturization and high integration, small hole processing lasers have become essential, and pattern exposure for small hole sizes has become essential. This paper intends to analyze the characteristics through patterns by exposing the PCB substrate through DMD and polygon scanner, which are different optical systems. Since the optical systems are different, the size of the patterns was made the same, and exposure was performed under the optimal conditions for each system. Pattern characteristics were analyzed through a 3D profiler. As a result of the analysis, there was no significant difference in line width between the two systems. However, it was confirmed that dmd had better pattern precision and polygon scanner had better productivity.