• 센서학회지
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• 제15권4호
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• pp.231-236
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• 2006

Single-mode planar waveguide type UV sensor was fabricated using SU-8 and photochromic dye. Polymer waveguide was fabricated $10{\mu}m$ width and $2{\mu}m$ thickness for single-mode operation. The UV sensor had an absorbance with $0.0396{\sim}0.114$ absorbance/mW respectively when the 5 mm sensing area was irradiated with UV for 3 sec. And sensor had a linear properties by sensing area variation. Proposed single-mode sensor had more excellent properties of UV sensitivity than other UV sensors.

• 정보저장시스템학회논문집
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• 제2권2호
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• pp.91-95
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• 2006

High-density image sensors rave microlens array to improve photosensitivity. It is conventionally fabricated by reflow process. The reflow process has some weak points. UV imprinting process can be proposed as an alternative process to integrate microlens array on photodiodes. In this study, the UV imprionting process to integrate microlens array on image sensor was developed using UV transparent flexible mold and simulated image sensor substrate. The UV transparent flexible mold was fabricated by replicating master pattern using siliconacrylate photopolymer. The releasing property and shape accuacy of siliconacrylate mold was analysed. After UV imprinting process, replication quality and align accuracy was analysed.

• Bulletin of the Korean Chemical Society
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• 제34권6호
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• pp.1632-1636
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• 2013

$Ga_2O_3$ one-dimensional (1D) nanostructures were synthesized by using a thermal evaporation technique. The morphology, crystal structure, and sensing properties of the $Ga_2O_3$ nanostructures functionalized with Pt to $NO_2$ gas at room temperature under UV irradiation were examined. The diameters of the 1D nanostructures ranged from a few tens to a few hundreds of nanometers and the lengths ranged up to a few hundreds of micrometers. Pt nanoparticles with diameters of a few tens of nanometers were distributed around a $Ga_2O_3$ nanorod. The responses of the nanorods gas sensors fabricated from multiple networked $Ga_2O_3$ nanorods were improved 3-4 fold at $NO_2$ concentrations ranging from 1 to 5 ppm by Pt functionalization. The Pt-functionalized $Ga_2O_3$ nanorod gas sensors showed a remarkably enhanced response at room temperature under ultraviolet (UV) light illumination. In addition, the mechanisms via which the gas sensing properties of $Ga_2O_3$ nanorods are enhanced by Pt functionalization and UV irradiation are discussed.

• 정보저장시스템학회:학술대회논문집
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• 정보저장시스템학회 2005년도 추계학술대회 논문집
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• pp.17-21
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• 2005

High-density image sensors have microlens array to improve photosensitivity. It is conventionally fabricated by reflow process. The reflow process has some weak points. UV imprinting process can be proposed as an alternative process to integrate microlens array on photodiodes. In this study, the UV imprionting process to integrate microlens array on image sensor was developed using W transparent flexible mold and simulated image sensor substrate. The UV transparent flexible mold was fabricated by replicating master pattern using siliconacrylate photopolymer. The releasing property and shape accuacy of siliconacrylate mold was analysed. After UV imprinting process, replication quality and align accuracy was analysed.

• 한국산학기술학회논문지
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• 제14권12호
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• pp.6434-6440
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• 2013

본 논문에서는 관로형 UV 소독기의 자동 세척 제어 및 원격 모니터링이 가능한 통합 제어 시스템을 제안한다. 제안한 시스템은 소독기 내 UV 램프 세척 와이퍼의 다양한 세척 동작 제어가 가능하고 UV 센서를 통해 오염도를 주기적 점검할 수 있어 관로형 소독기를 보다 효율적으로 유지, 보수할 수 있다. 또한, 관로형 소독기의 제어기는 개방형 프로세서를 기반으로 하고 있어 외부의 스마트기기와 블루투스 통신을 통해 제어명령 및 센서 정보 등을 주고받을 수 있다. 그 뿐만 아니라 스마트기기를 통해 무선으로 제어기의 펌웨어 업그레이드가 가능하기 때문에 세척 동작 변화 및 각종 센서 장 탈착에 유연하게 대처할 수 있다. 이러한 장점들을 통해 제안한 시스템으로 소규모 마을 등의 스마트 하수 처리 시스템 구축이 가능하다.

• 센서학회지
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• 제17권5호
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• pp.346-349
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• 2008

A metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) is proposed as an effective UV sensing device for integration with a GaN n-channel MISFET on auto-doped p-type GaN grown on a silicon substrate. Due to the high hole barrier of the metal-p-GaN contact, the dark current density of the fabricated MSM PD was less than $3\;nA/cm^2$ at a bias of up to 5 V. Meanwhile, the UV/visible rejection ratio was 400 and the cutoff wavelength of the spectral responsivity was 365 nm. However, the UV/visible ratio was limited by the sub-bandgap response, which was attributed to defectrelated deep traps in the p-GaN layer of the MSM PD. In conclusion, an MSM PD has a high process compatibility with the n-channel GaN Schottky barrier MISFET fabrication process and epitaxy on a silicon substrate.

• Smart Structures and Systems
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• 제8권5호
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• pp.471-486
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• 2011

Various types of strain sensors have been developed and widely used in the field for monitoring the mechanical deformation of structures. However, conventional strain sensors are not suited for measuring large strains associated with impact damage and local crack propagation. In addition, strain sensors are resistive-type transducers, which mean that the sensors require an external electrical or power source. In this study, a gold nanoparticle (GNP)-based polymer composite is proposed for large strain sensing. Fabrication of the composites relies on a novel and simple in situ GNP reduction technique that is performed directly within the elastomeric poly(dimethyl siloxane) (PDMS) matrix. First, the reducing and stabilizing capacities of PDMS constituents and mixtures are evaluated via visual observation, ultraviolet-visible (UV-Vis) spectroscopy, and transmission electron microscopy. The large strain sensing capacity of the GNP-PDMS thin film is then validated by correlating changes in thin film optical properties (e.g., maximum UV-Vis light absorption) with applied tensile strains. Also, the composite's strain sensing performance (e.g., sensitivity and sensing range) is also characterized with respect to gold chloride concentrations within the PDMS mixture.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권9호
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• pp.676-680
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• 1999

To do breath alcohol measurement, a sensor is necessary that it can detect low alcohol gas concentration of 0.01% at least. In this work, a capacitance-type alcohol gas sensor using porous silicon layer is developed to measure low alcohol gas concentration. The sensor using porous silicon layer has some sensitivity at room temperature by very large effective surface area, but there is still much room for improvement. In this experiment, we measured the capacitance of the sensor under 254 nm UV light on the porous silicon layer, in which alcohol solution was kept in a flask at 25, 35, and $45^{\circ}C$ by a heater. As the result, the improvement of sensitivity by illuminating UV light was observed. The increasing rate of the capacitance was shown to be double more than those measured under UV-off state. It is supposed that UV light activates response of the oriental and interfacial polarizations which have slow relaxation time for AC field.

• 센서학회지
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• 제16권1호
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• pp.7-10
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• 2007

A thick film catalytic gas sensors which can be operated at $142^{\circ}C$ in presence of ultra violet-light emitting diode has been developed to measure hydrogen concentration in 0-5 % range. The sensing material as a combustion catalyst consists of $TiO_{2}$ (5 wt%) and Pd/Pt (20 wt%) supported on $Al_{2}O_{3}$ powder and the reference material to compensate the heat capacity of it in a bridge circuit was an catalyst free $Al_{2}O_{3}$ powder. Platinum heater and sensor materials were formed on the alumina plate by screen printing method and heat treatment. The effect of UV radiation in the presence of photo catalyst $TiO_{2}$ on the sensor sensitivity, response and recovery time has been investigated. The reduction of operating temperature from $192^{\circ}C$ to $142^{\circ}C$ for hydrogen gas sensing property in presence of UV radiation is attributed to the hydroxy radical and superoxide which was formed at the surface of $TiO_{2}$ under UV radiation.

• 센서학회지
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• 제20권3호
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• pp.156-161
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• 2011

We fabricated a schottky barrier metal oxide semiconductor field effect transistor(SB-MOSFET) by applying indium-tin-oxide(ITO) to the source/drain on a highly resistive GaN layer grown on a silicon substrate. The MOSFET, with 10 ${\mu}M$ gate length and 100 ${\mu}M$ gate width, exhibits a threshold gate voltage of 2.7 V, and has a sub-threshold slope of 240 mV/dec taken from the $I_{DS}-V_{GS}$ characteristics at a low drain voltage of 0.05 V. The maximum drain current is 18 mA/mm and the maximum transconductance is 6 mS/mm at $V_{DS}$=3 V. We observed that the spectral photo-response characterization exhibits that the cutoff wavelength was 365 nm, and the UV/visible rejection ratio was about 130 at $V_{DS}$ = 5 V. The MOSFET-type UV detector using ITO, has a high UV photo-responsivity and so is highly applicable to the UV image sensors.