• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.408-411
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• 2003

최근 활발하게 연구가 진행되고 있는 마이크로 인덕터는 자기 데이터 저장을 위한 헤드, 자기장 센서, 마이크로 변압기와 휴대폰의 수동 소자와 같은 다양한 분야에 이용되고 있다. 마이크로 인덕터를 제작하기 위해 UV-LIGA 공정을 개발하였다. 도금 공정을 이용하여 마이크로 인덕터의 철심과 구리선 제작하였다. 도금 공정을 위해 필요한 마이크로 몰드는 여러 종류의 thick photoresist를 이용하여 저응력 공정으로 제작하였다. 도금 공정을 이용하여 toroid형 마이크로 인덕터를 제작하였다. 도금 공정에서 발생 할 수 있는 응력을 최소화할 수 있는 공정을 개발하였다.

• Journal of the Semiconductor & Display Technology
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• v.10 no.4
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• pp.53-59
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• 2011

Recently there have been considerable attentions on nanoimprint lithography (NIL) by the display device and semiconductor industry due to its potential abilities that enable cost-effective and high-throughput nanofabrication. Although one of the current major research trends of NIL is large-area patterning, the technical difficulties to keep the uniformity of the residual layer become severer as the imprinting area increases more and more. In this paper we focused on the deformation of the $2^{nd}$ generation TFT-LCD sized ($370{\times}470mm^2$) large-area soft mold in the UV imprinting process. A mold was fabricated with PDMS(Poly-dimethyl Siloxane) layered glass back plate(t0.5). Besides, the mold includes large surrounding wall type protrusions of 1.9 mm width and the via-hole(7 ${\mu}m$ diameter) patterend area. The large surrounding wall type protrusions cause the proximity effect which severely degrades the uniformity of residual layer in the via-hole patterend area. Therefore the deformation of the mold was calculated by finite element analysis to assess the effect of large surrounding wall type protrusions and the flexiblity of the mold. The deformation of soft mold was verified by the measurements qualitatively.

• Korean Journal of Optics and Photonics
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• v.23 no.1
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• pp.12-16
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• 2012

In the paper, we fabricated a Ni master with $45^{\circ}$-mirror structures for flexible waveguide fabrication. The flexible waveguide films with embedded $45^{\circ}$-angled mirrors at the waveguide ends were successfully fabricated using a UV-imprint process. Next, in order to enhance the reflectivity of the mirrors, Ni(3 nm)-Au(200 nm) bilayers were evaporated on the $45^{\circ}$-angled facets through a locally opened thin mask using an electron beam evaporator. We measured propagation loss, bending loss, mirror loss and bending reliability of the fabricated waveguide.

• Korean Journal of Optics and Photonics
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• v.24 no.4
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• pp.184-188
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• 2013

Two types of polymer-based optical splitters with $200{\mu}m$ large core are presented for optical multimode networks, such as smart home networks, intelligent automotive networks, etc. Optical splitters that have 1:1 symmetric and 9:1 asymmetric structure were fabricated by a ultra violet(UV)-imprint technology using a deep etched Si(silicon) master by the Bosch process. In this paper, we successfully fabricated the symmetric and asymmetric optical splitters with suitable optical network applications.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.12
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• pp.10-15
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• 2020

Ultraviolet rays, which have wavelengths smaller than 400 nm, are very harmful to the eyes. Recently, high-energy visible light was also revealed to be harmful to retinal cells. Therefore, polymer eyeglass lenses that can block UV and high-energy visible light are needed for eye health. In this study, high-refractive-index polymer eyeglass lens, n=1.67, were manufactured using the injection-mold method with the m-xylene diisocyanate monomer, 2,3-bis((2-mercaptoethyl)thio)-1-propanethiol monomer, benzotriazole UV absorber, release of alkyl phosphoric ester, dye mixture of CI solvent violet 13, and catalyst of dibutyltin dichloride mixture. A multi-layer anti-reflection coating was applied to manufactured polymer eyeglass lenses for both sides using an E-beam evaporation system. The optical properties of the manufactured lenses with the UV and high-energy visible light-blocking function were analyzed by UV-visible spectrophotometry. As a result, the polymer eyeglass lens with a UV absorber of 0.5 wt. % blocked 99% of UV and high-energy visible light shorter than 411 nm. The average transmittance of the polymer eyeglass lens with a UV absorber of 0.5wt.% was 97.9% in the range of 460 ~ 660 nm for photopic eye sensitivity higher than 10%. Therefore, clear image acquisition in photopic vision is possible.

• Polymer(Korea)
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• v.30 no.5
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• pp.407-411
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• 2006

The SiC-based ceramic nanopatterns were prepared by placing polydimethylsiloxane (PDMS) mold from DVD master on the spincoated polyvinylsilaeane (PVS) or allylhydridopolycaybosilane (AHPCS) as ceramic precursors to fabricate line pattern via UV-nanoimprint lithography (UV-NIL), and subsequent pyrolysis at $800^{\circ}C$ in nitrogen atmosphere. As the dimensional change of polymeric and ceramic patterns was comparatively investigated by AFM and SEM, the shrinkage in height was 38.5% for PVS derived pattern and 24.1% for AHPCS derived pattern while the shrinkage in width was 18.8% for PVS and 16.7% for AHPCS. It indicates that higher ceramic yield of the ceramic precursor resulted in less shrinkage, and the strong adhesion between the substrate and the pattern caused anisotropic shrinkage. This preliminary work suggests that NIL is a promissing route for fabricating ceramic MEMS devices, with the development on the shrinkage control.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.1
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• pp.55-59
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• 2022

In this paper, we compared the electric field and absorptance of nano particles in nanostructures by amplifying the electric field around the nanoparticles through plasmon resonance and comparing the structure that can increase the absorptance with the nanostructure by using the Finite Different Time Domain (FDTD) simulation. In addition, the width of the nanostructure was adjusted to 240 nm ~ 300 nm, and the light absorptance rate was higher as the gap between the particles was short. In addition, a study was conducted on the formation of nanoparticles and nanostructures on the surface through UV imprint. In order to form particles in the structure, the nano particles were first arranged in the mold used for the fabrication of the structure using spray coating, and then fabricated through UV imprinting. The nanostructure and particles were formed together by scanning electron microscopy.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.143-144
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• 2006

In this paper, we proposed XP KMPR-1050 negative tone resist to replace SU-8 resist for multi-layer micro-structures and thick plating mold fabrication using UV-LIGA process. XP KMPR resist proposed in this paper can be easily striped using a common stripping solution such as NMP without damage of micro-structure. The conditions for the fabrication of XP KMPR micro-structure were optimized by adjustment of exposure and post-exposure bake(PEB). The $140{\mu}m$ -thick and an aspect ratio at least 10 micro-structure and multi-layer structures were successfully fabricated through the process conditions. Through-mold electroplating and PR striping of XP KMPR has been successfully demonstrated.

• Journal of the Semiconductor & Display Technology
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• v.14 no.3
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• pp.61-66
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• 2015

Recently, the major trends of NIL are high throughput and large area patterning. For UV NIL, if it can be proceeded in the non-vacuum environment, which greatly simplifies tool construction and greatly shorten process times. However, one key issue in non-vacuum environment is air bubble formation problem. In this paper, numerical analysis of bubble defect of UV NIL is performed. Fluent, flow analysis focused program was utilized and VOF (Volume of Fluid) skill was applied. For various resist-substrate and resist-mold angles, effects of velocity inlet and residual layer thickness of resist on bubble defect formation were investigated. The numerical analyses show that the increases of velocity inlet and residual layer thickness can cause the bubble defect formation, however the decreases of velocity inlet and residual layer thickness take no difference in the bubble defect formation.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.50.2-50.2
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• 2009

사파이어는 질화물계 광전자소자 제작 시 박막 성장 기판으로 주로 사용되어 최근 그 중요성이 부각되고 있다. 특히 미세 패턴이 형성된 사파이어 기판을 이용하여 질화물계 발광다이오드 소자를 제작하면 빛의 난반사가 증가하여 광추출효율에 큰 개선이 나타난다. 또한 사파이어는 화학적 안정성이 뛰어나고, 높은 강도를 지녀 나노임프린트 등 여러 가지 패터닝 공정에서 패턴 형성 몰드로도 응용될 수 있다. 그러나 이와 같은 사파이어의 화학적 안정성으로 인하여 sub-micron 크기의 미세 패턴을 형성하기 힘들며, 현재 사파이어의 패턴은 micron 크기로 제한되어 사용되고 있다. 본 연구에서는 나노임프린트 리소그라피(NIL)를 사용하여 사파이어 웨이퍼의 c-plane위에 sub-micron 크기의 hole 패턴 및 pillar 패턴을 형성하였다. 우선 Hole 패턴을 형성하기 위해 사파이어 기판 위에 금속 hard mask 패턴을 UV 임프린트 공정과 etch 공정을 통해 형성하였다. 그리고 이 금속 패턴을 mask로 사파이어를 ICP 식각을 하여 hole 패턴을 형성하였다. 또한 Pillar 패턴을 형성하기 위해 lift-off 공정을 이용하여 금속 마스크 패턴을 형성하였고 이를 ICP 식각을 통해 사파이어 기판 위에 pillar 패턴을 형성하였다.