• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.10a
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• pp.54-54
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• 2003

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.324-326
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• 2004

We have obtained ultra-short pulses with a wavelength of 616 nm from a Distributed Feedback Dye Laser pumped by excimer laser. Using the second harmonic generation, we obtained ultra-short pulse at 308nm in ultraviolet region and also performed amplification in 3 stages of XeCl amplifiers.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.12
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• pp.2310-2316
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• 2016

We studied the effect of $Co^{60}$ gamma-radiation on the fiber Bragg gratings (FBGs) by irradiation time of UV Krypton fluoride (KrF) excimer laser among grating processing parameters. The FBGs were fabricated in a different UV laser irradiation time at 30, 60, 90, and 120 seconds using the same commercial Ge-doped silica core fiber (SMF-28e). It was exposed to gamma-radiation up to a high dose of 34.3 kGy at the dose rate of 106 Gy/min, and then it was analyzed radiation effects by measuring the radiation-induced change in the temperature sensitivity coefficient and Bragg wavelength shift. According to the experimental results, We confirmed that the UV laser irradiation period for grating inscription has a highly effect on the radiation sensitivity of the FBGs. The radiation-induced Bragg wavelength shift by the change of laser irradiation conditions showed a difference more than about 50 %.

• Laser Solutions
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• v.15 no.4
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• pp.16-19
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• 2012

Due to the fact that the dimensions of circuit lines of IC substrates have been forecast to reduce rapidly, engraving the circuit line patterns with laser has emerged as a promising alternative. To engrave circuit line patterns in an IC substrate, we used a projection ablation technique in which a metal (INVAR) mask and a DPSS UV laser instead of an excimer laser are used. Results showed that the circuit line patterns engraved in the IC substrate have a width of about 15um and a depth of $13{\mu}m$. This indicates that the projection ablation with a metal mask and a DPSS UV laser could feasibly replace the semi-additive process (SAP).

• Proceedings of the Korean Society of Laser Processing Conference
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• 2002.05a
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• pp.61-64
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• 2002

• Proceedings of the Korean Society of Laser Processing Conference
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• 2001.05a
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• pp.78-80
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• 2001

• Laser Solutions
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• v.14 no.1
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• pp.14-18
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• 2011

Semiconductor industry demands decrease in line/space dimensions of IC substrates. Particularly for IC substrates for CPU, line/space dimensions below $10{\mu}m/10{\mu}m$ are expected to be used in production since 2014. Conventional production technologies (SAP, etc.) based on photolithography are widely agreed to be reaching capability limits. To address this limitation, the embedded circuit fabrication technology using laser ablation has been recently developed. In this paper, we used a nanosecond UV laser and a picosecond UV laser to fabricate embedded circuit patterns into a buildup film with $SiO_2$ powders for IC substrate. We conducted SEM and EDS analysis to investigate surface quality of the embedded circuit patterns. Experimental results showed that due to higher recoil pressure, picosecond UV laser ablation of the buildup film generated a better surface roughness.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.10a
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• pp.517-518
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• 2006

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.05a
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• pp.245-245
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• 2004

최근 급속히 성장하는 제약산업 분야에서 신약개발, 약물 투여, 유전자 분석에 필요한 비용과 시간을 줄이기 위하여 랩온어칩(Lab-on-a-chip) 기술이 부상하고 있다. 이러한 랩온어칩에서는 원하는 소량의 시료를 정밀하게 이송시켜 혼합, 반응, 분리, 검출 등이 하나의 칩 위에서 일련의 과정으로 수행 가능하게 하여 고속, 고효율, 저비용의 자동화를 시킬 수 있는 장점이 있다. 즉, 이는 하나의 칩 위에 분석에 필요한 여러 가지 장치들을 마이크로 머시닝 기술로 초소형 집적화 시킨 마이크로 프로세서이다.(중략)

• Proceedings of the Optical Society of Korea Conference
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• 2006.07a
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• pp.507-508
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• 2006

Sol-gel 및 MCVD 공정을 사용하여 Ag 가 함유된 광섬유를 제조하였다. KrF 엑시머 레이저에서 출력된 248 nm 의 UV 빔을 광섬유에 조사한 경우 450 nm 를 중심으로 광흡수가 6 dB/cm 로 급격히 증가하는 것을 확인할 수 있었으며, 이는 UV 레이저 조사에 의한 Ag 나노입자 형성에 따른 것으로 추측된다.