• Membrane and Water Treatment
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• 제4권4호
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• pp.237-249
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• 2013

Ultra-pure water (UPW), a highly treated water free of colloidal material and of a conductivity less than 0.06 ${\mu}S$, is an essential component required by modern industry. One of the methods for UPW production is the electrodialysis-ion exchange (ED/IE) system, in which the electrodialysis (ED) process is used as a preliminary demineralization step. The IE step can be replaced with electrodeionization (EDI) to decrease the volume of post-regeneration lyes. In this paper, the electrodialysis process carried out to relatively low diluate conductivity was investigated and the costs of UPW production were calculated. The optimal value of desalination degree by ED in the ED/IE and ED/EDI systems was estimated. UPW unit costs for integrated ED/IE and ED/EDI systems were compared to simple ion exchange and other methods for UPW production (RO-IE, RO-EDI). The minimal UPW unit costs in ED/EDI integrated system were estimated as $0.37/$m^3$ for feed TDS 600 mg/L and $0.36/$m^3$ for feed TDS 400 mg/L at 64 $m^3/h$ capacity, which was lower than in the comparable ED/IE integrated system ($0.42-0.44/$m^3$). The presented results suggest that an ED/EDI integrated system may be economically viable.

• 반도체디스플레이기술학회지
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• 제9권1호
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• pp.55-59
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• 2010

In this study, we developed nonvolatile residue (NVR) real-time monitoring system to measure the nonvolatile residue particle in ultra pure water (UPW). This device has a capability of measuring 4 different channels, i.e., 10 nm, 30 nm, 50 nm, and 100 nm. Until now, the light scattering method to detect RAE(residue after evaporation) was the only choice. However, this method can detect RAE larger than ca. 50 nm. In ultra pure water, RAE particles are usually very small and hard to detect with conventional laser scattering devices. To detect very small RAEs, a new system is developed and tested. The system consists of an atomizer that generates RAE particles and a four channel condensation particle counter (CPC). During the several months' operation in manufacturing line, the system was successfully tested and showed reliable results.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.617-620
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• 1999

To reduce the consumption of chemicals and ultra pure water(UPW) in cleaning process used in device manufacturing, we proposed wet processes that use electrolytic ionized water(EIW), which is generated by electrolysis of a diluted electrolyte solution or UPW and systemically investicate the EIW\`s characteristics. EIW\`s pH values are increased in cathode chamber and decreased in anode chamber according to the electrolysis time and its varied ratio is reduced with time increasement. The variation of pH and ORP is increased accordin to the applied voltage until critical voltage. But more than that voltage, the variation is decreased because of ion\`s scattering effect. When electrolyte is added, the effects of electrolysis is increased because electrolyte acts as catalyst. But when the density of electrolyte is increased more than critical value, ion\`s flowage is obstructed and the effects of electrolysis is decreased.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 The 6th International Symposium of East Asian Resources Recycling Technology
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• pp.415-420
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• 2001

Water usage in the semiconductor industries is dramatically increased by not only using bigger wafer from 8 inches to 12 inches but also by adapting new process such as Chemical Mechanical Planarization (CMP) process invented by IBM in late '80. However, The document published by International Semiconductor Association suggests the decreasing ultra pure water (UPW) use from 22 gallon/in$^2$in 1997 to 5 gallon/in$^2$ in 2012. The criteria will possibly used as exporting obstacle in the future. Generally, Solid content of CMP slurry is about 15wt%. The slurry is diluted with UPW before fed to a CMP process. When the slurry is discharged from the process as waste, it contains 0.1~0.6wt% of solid content and 9~10 at pH. The CMP waste slurry is discharged to stream with minimum treatment. In this study, to find optimum condition of coagulation for water recovery from the waste CMP slurry various condition of coagulation were examined. After coagulation far 0.1 wt% solid content of waste CMP slurry, the sludge volume was 10~15% after 30 min of sedimentation time. For the 0.5 wt%, sludge volume was 50~55% after one hour of sedimentation time. For more than 80% of water recycling, the solid content should be in the range of 0.1 to 0.2wr%. Based on the result of the turbidity removal, the Zeta Potential and the analysis of heavy metals, the optimum condition for 0.1 wr% of waste CMP slurry was with 20 mg/L of PACI at 4 to 5 of pH. The result showed that the optimum conditions fer the 0.1 wt% waste CMP slurry were 100mg/L of Alum at 4~5 of pH, 100 mg/L of MgCI$_2$at pH 10 to 11 and 100 mg/L of Ca(OH)$_2$at pH 9 to 11, respectively.

• 반도체디스플레이기술학회지
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• 제2권3호
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• pp.1-6
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• 2003

In the rapid changes of the semiconductor manufacturing technologies for early 21st century, it may be safely said that a kernel of terms is the size increase of Si wafer and the size decrease of semiconductor devices. As the size of Si wafers increases and semiconductor device is miniaturized, the units of cleaning processes increase. A present cleaning technology is based upon RCA cleaning which consumes vast chemicals and ultra pure water (UPW) and is the high temperature process. Therefore, this technology gives rise to environmental issue. To resolve this matter, candidates of advanced cleaning processes have been studied. One of them is to apply the electrolyzed water. In this work, electrolyzed water cleaning was compared with various chemical cleaning, using Si wafer surfaces by changing cleaning temperature and cleaning time, and especially, concentrating upon the contact angle. It was observed that contact angle on surface treated with Electrolyzed water cleaning was $4.4^{\circ}$ without RCA cleaning. Amine series additive of high pKa (negative logarithm of the acidity constant) was used to observe the property changes of cathode water.

• Membrane and Water Treatment
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• 제5권2호
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• pp.87-108
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• 2014

Electrodeionization (EDI), which combines electrodialysis (ED) and conventional ion-exchange (IX), is a mature process which has been applied since more than twenty years on commercial use for the production of ultrapure water (UPW). Eliminating chemical regeneration is the main reason for its commercial success. The increase in acceptance of EDI technology has led to an installation of very large plant as the commercial state of the art that produces $1,500m^3/h$ of water for high pressure steam boiler. More recently, EDI system has found a number of new interesting applications in wastewater treatment, biotechnology industry, and other potential field. Along with further growth and wider applications, the development of stack construction and configuration are also become a concern. In this paper, the principle of EDI process is described and its recent developments, commercial scale, and various applications are pointed out.

• 청정기술
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• 제7권3호
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• pp.215-223
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• 2001

A present semiconductor cleaning technology is based upon RCA cleaning technology which consumes vast amounts of chemicals and ultra pure water(UPW) and is the high temperature process. Therefore, this technology gives rise to the many environmental issues, and some alternatives such as electrolyzed water(EW) are being studied. In this work, intentionally contaminated Si wafers were cleaned using the electrolyzed water. The electrolyzed water was generated by an electrolysis system which consists of three anode, cathode, and middle chambers. Oxidative water and reductive water were obtained in anode and cathode chambers, respectively. In case of NH4Cl electrolyte, the oxidation-reduction potential and pH for anode water(AW) and cathode water(CW) were measured to be +1050mV and 4.8, and -750mV and 10.0, respectively. AW and CW were deteriorated after electrolyzed, but maintained their characteristics for more than 40 minutes sufficiently enough for cleaning. Their deterioration was correlated with CO2 concentration changes dissolved from air. Contact angles of UPW, AW, and CW on DHF treated Si wafer surfaces were measured to be $65.9^{\circ}$, $66.5^{\circ}$ and $56.8^{\circ}$, respectively, which characterizes clearly the eletrolyzed water. To analyze the amount of metallic impurities on Si wafer surface, ICP-MS was introduced. It was known that AW was effective for Cu removal, while CW was more effective for Fe removal. To analyze the number of particles on Si wafer surfaces, Tencor 6220 were introduced. The particle distributions after various particle removal processes maintained the same pattern. In this work, RCA consumed about $9{\ell}$ chemicals, while EW did only $400m{\ell}$ HCl electrolyte or $600m{\ell}$ NH4Cl electrolyte. It was hence concluded that EW cleaning technology would be very effective for promoting environment, safety, and health(ESH) issues in the next generation semiconductor manufacturing.

• 청정기술
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• 제6권1호
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• pp.79-84
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• 2000

반도체 세정공정에서 사용되는 화학약품의 소모량을 줄이기 위하여 소량의 전해질 혹은 초순수만을 전기분해 시켜 생성되는 전리수를 이용하여 금속 불순물들이 오염된 실리콘 웨이퍼를 습식세정을 하였다. 전리수는 다양한 범위의 pH 및 산화환원전위(oxidation-reduction potential, ORP)를 형성할 수 있으며, 전리수의 양극수는 pH 및 산화환원전위를 각각 4.7 및 +1000mV의 산화성 수용액을, 전리수의 음극수는 pH 및 산화환원전위가 각각 6.3 및 -550mV를 40분 이상 유지하고 있었다. 실리콘 웨이퍼 세정 전과 후의 금속 불순물 측정은 ICP-MS(Inductively coupled plasma spectroscopy)를 사용하였다. 전리수 가운데 양극수는 구리 불순물 제거에, 음극수는 철 불순물 제거에 효과적임을 확인하였다.

• 한국산학기술학회:학술대회논문집
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• 한국산학기술학회 2001년도 춘계학술대회 발표논문집
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• pp.124-128
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• 2001

A present semiconductor cleaning technology is based upon RCA cleaning technology which consumes vast amounts of chemicals and ultra pure water(UPW) and is the high temperature Process. Therefore, this technology gives rise to the many environmental issues, and some alternatives such as functional water cleaning are being studied. The electrolyzed water was generated by an electrolysis system which consists of anode, cathode, and middle chambers. Oxidative water and reductive water were obtained in anode and cathode chambers, respectively. In case of NH$_4$Cl electrolyte, the oxidation-reduction potential and pH for anode water(AW) and cathode water(CW) were measured to be +1050mV and 4.8, and -750mV and 10.0, respectively. AW and CW were deteriorated after electrolyzed, but maintained their characteristics for more than 40 minutes sufficiently enough for cleaning. Their deterioration was correlated with CO$_2$ concentration changes dissolved from air. It was known that AW was effective for Cu removal, while CW was more effective for Fe removal. The particle distributions after various particle removal processes maintained the same pattern. In this work, RCA consumed about 9$\ell$chemicals, while EW did only 400$m\ell$ HCI electrolyte or 600$m\ell$ NH$_4$Cl electrolyte. It was hence concluded that EW cleaning technology would be very effective for eliminating environment, safety, and health(ESH) issues in the next generation semiconductor manufacturing.

• 한국정밀공학회지
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• 제31권12호
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• pp.1107-1113
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• 2014

In this article, the megasonic cleaning system for cleaning micro/nano particles from flat panel display (FPD) surfaces was developed. A piezoelectric actuator and a waveguide were designed by finite element method (FEM) analysis. The calculated peak frequency value of the quartz waveguide was 1002 kHz, which agreed well with the measured value of 1003 kHz. The average acoustic pressure of the megasonic cleaning system was 43.1 kPa, which is three times greater than that of the conventional type of 13.9 kPa. Particle removal efficiency (PRE) tests were performed, and the cleaning efficiency of the developed system was proven to be 99%. The power consumption of the developed system was 64% lower than that of the commercial system. These results show that the developed megasonic cleaning system can be an effective solution in particle removing from FPD substrate with higher energy efficiency and lower chemical and ultra pure water (UPW) consumption.