• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.7
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• pp.458-461
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• 2014

TiC thin films were deposited on Si wafer by unbalanced magnetron sputtering (UBMS) system with two targets of graphite and titanium. During the TiC sputtering, the RF power was varied from 100 W to 175 W and the physical and electrical properties of TiC films were investigated. The hardness and rms surface roughness of TiC films were improved with increasing RF power and the maximum hardness about 24 GPa and the minimum rms surface roughness about 1.2 nm were obtained. The resistivity of TiC films was decreased with increasing RF power. Consequently, the physical and electrical properties of TiC film wewe improved with increasing RF power.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.68-71
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• 2003

The reaction of ultra-small eutectic 58Bl-42Sn solder bump with Au/Ni/Ti and Au/Cu/Ti UBMs during reflow was studied. The eutectic Bi-Sn solder bumps of $46{\mu}m$ diameter were fabricated by using the evaporation method and were reflowed using the rapid thermal annealing system. The intermetallic compound was characterized using a SEM, an EDS, and an XRD. The $(Cu_xAu_{1-x})_6Sn_5$ compounds formed at the interface between Bi-Sn solder and Au/Cu/Ti UBM. On the other hand, in the Bi-Sn solder bump on Au/Ni/Ti UBM, the faceted and rectangular intermetallic compounds were observed on the solder bump surface and inside the solder bump as well as at the UBM interface. These intermetallic compounds were Identified as $(Au_{l-x-y}Bi_xNi_y)Sn_2$ phase.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.1096-1098
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• 1999

The performance of as plasma display panels (PDP) is influenced strongly by the surface glow discharge characteristics on the MgO thin films. This paper deals with the optimum preparation conditions of MgO Protecting layer by RF unbalanced magnetron sputtering(UBMS) in surface discharge type AC PDP. The samples prepared with the do bias voltage of -10V showed lower discharge voltage, lower erosion rate as a consequence of ion bombardment, higher optic transparency and higher crack resistance in annealing process than those samples prepared by conventional magnetron sputtering or E-beam eraporation.

• Journal of the Korean institute of surface engineering
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• v.40 no.5
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• pp.203-208
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• 2007

Preliminary studies were conducted to develop a dimensionally stable anode (DSA)electrode prepared by reactive sputtering method. The microstructure, surface morphology and electrochemical properties of iridium oxide $(IrO_2)$ coatings synthesized by unbalanced magnetron sputtering (UBMS) and conventional DSA electrode were compared. In addition, the possibilities of $IrO_2$ films synthesized by UMB on a real DSA electrode were investigated by electro-chemical application test. The degree of non-stoichiometry and surface area were closely related to the electro-chemical activity of the $IrO_2$ electrode. The feasibility of making a DSA electrode prepared by PVD technique was demonstrated through the present work.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.24 no.1
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• pp.117-123
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• 2015

The need for drop simulations for board-leveled flip chips in micro-system packaging has been increasing. There have been many studies on flip chips with various solder ball compositions. However, studies on flip chips with Sn-1.0Ag-0.5Cu and Sn-3.0Ag-0.5Cu have rarely been attempted because of the unknown material properties. According to recent studies, drop simulations with these solder ball compositions have proven feasible. In this study, predictions of the impact lifetime by drop simulations are performed considering Cu and Cu/Ni UBMs using LS-DYNA to alter the design parameters of the flip chips, such as thickness of the flip chip and size of the solder ball. It was found that a smaller chip thickness, larger solder ball diameter, and using the Cu/Ni UBM can improve the drop lifetime of solder balls.

• Bulletin of the Korean Chemical Society
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• v.32 no.3
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• pp.939-942
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• 2011

Conductive carbon films were prepared at room temperature by unbalanced magnetron sputtering (UBMS) on silicon substrates using argon (Ar) gas, and the effects of post-annealing temperature on the structural, tribological, and electrical properties of carbon films were investigated. Films were annealed at temperatures ranging from $400^{\circ}C$ to $700^{\circ}C$ in increments of $100^{\circ}C$ using a rapid thermal annealing method by vacuum furnace in vacuum ambient. The increase of annealing temperature contributed to the increase of the ordering and formation of aromatic rings in the carbon film. Consequently, with increasing annealing temperature the tribological properties of sputtered carbon films are deteriorated while the resistivity of carbon films significantly decreased from $4.5{\times}10^{-3}$ to $1.0{\times}10^{-6}\;{\Omega}-cm$ and carrier concentration as well as mobility increased, respectively. This behavior can be explained by the increase of sp2 bonding fraction and ordering $sp^2$ clusters in the carbon networks caused by increasing annealing temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.7
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• pp.475-480
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• 2018

We investigated the tribological properties of amorphous carbon (a-C) films deposited with CrC interlayers of various thicknesses as the adhesive layer. A-C and CrC thin films were deposited using the unbalanced magnetron (UBM) sputtering method with graphite and chromium as the targets. CrC films as the interlayer were fabricated under a-C films, and various structural, surface, and tribological properties of a-C films deposited with various CrC interlayer thicknesses were investigated. With various CrC interlayer thicknesses under a-C films, the tribological properties of CrC/a-C films were improved; the increased film thickness exhibited a maximum high hardness of over 27.5 GPa, high elastic modulus of over 242 GPa, critical load of 31 N, residual stress of 1.85 GPa, and a smooth surface below 0.09 nm at the condition of 30-nm CrC thickness.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.465-474
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• 2001

Type 304SS coatings were performed at 200$\square$ onto AISI 1045 carbon steel substrate using unbalanced magnetron sputtering (UBMS) with an austenitic AISI 304 stainless steel (SS) target of 100mm diameter. The total deposition pressure in the active Ar gas was 2$\times$10$^{-3}$ Torr. Coatings were done at various target power densities and bias voltages. Chemical compositions of metallic elements of the coatings were measured by energy dispersive X-rays spectroscopy (EDS). The structure and the morphology of Type 304SS coatings were investigated by means of X-ray diffraction (XRD) and scanning electron microscopy (SEM). Corrosion properties of the coated specimens were examined using electrochemical polarization measurements and electrochemical impedance spectroscopy in a deaerated 3.5% NaCl solution. The porosity rate was obtained from a comparison of the dc polarization resistance of the uncoated and coated substrates. Scratch adhesion testing was used to compare the critical loads for different coatings. XRD results showed that the sputtered films exhibit a ferritic b.c.c. $\alpha$-phase. Potentiodynamic polarization curves indicated that all samples had much higher corrosion potential and better corrosion resistance than the bare steel substrate. The corrosion performance increased with increasing power density and the adhesion was enhanced at the bias voltage of -50V. An improvement in the corrosion resistance can be obtained with a better coating adhesion. Finally, an optimized deposition condition for corrosion protection was found as $40W/cm^2$ and -50V.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.703-703
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• 2013

다이아몬드상 탄소 박막(Diamond-like carbon, DLC) 박막은 낮은 마찰 계수, 높은 내마모성, 화학적 안정성, 적외선 영역에서의 높은 투과율 등의 장점을 바탕으로 MEMS (Micro-Electro Mechanical System) 소자와 MMAs (Moving Mechanical Assemblies)의 고체윤활코팅, 마그네틱 미디어와 하드디스크의 슬라이딩 표면 등 다양한 분야에 코팅소재로써 응용되어왔다 [1,2]. 현재 전기철도용 집전판은 마찰이 적고 전도성을 지니는 카본 소재로 구성되어 있다. 그러나 그 마모 비율이 너무 심하여 이를 개선할 수 있는 방안으로 고경도 저마찰력을 지니는 DLC 박막을 코팅 소재로써 제안하고자 한다. 그러나 기존에 DLC 박막은 절연특성이 매우 우수하기 때문에 기존에 전도성을 지니는 카본 집전판에 적용하기에는 어려움이 따른다. 따라서 DLC 박막 내에 실리콘(Si) 또는 금속(Metal)을 첨가시키거나, 금속 중간층을 포함시켜 전기적으로 전도특성을 향상시키는 방안이 제시되고 있으며, 본 연구에서는 DLC 박막과 유사하게 우수한 경도특성을 지니고, 낮은 마찰계수등을 지니는 비정질 탄소박막을 연구하여 카본 집전판에 코팅하고자하며, 특히 비정질 탄소박막에 금속 Ti를 도핑하여 집전판과의 접착력과 전기적 전도 특성을 향상시키고자 한다. Ti가 도핑된 탄소박막(TiC) 박막은 비대칭 마그네트론 스퍼터링(unbalanced magnetron sputtering; UBMS) 시스템을 이용하여 제작하였으며, 스퍼터링 조건 중 기판에 인가되어지는 기판온도에 따라 변화되어지는 TiC 박막의 트라이볼로지(Tribology) 특성을 고찰하고자 하였다. 증착시 기판온도의 증가는 TiC 박막의 경도, 마찰계수 특성등 트라이볼로지 특성을 향상시켰으며, 전기적 전도 특성을 향상시켰다. 이러한 결과는 스퍼터링 방법에 의해 증착되어진 TiC 박막내에 존재하는 sp2 결합과 관계가 있음을 확인할 수 있으며, 트라이 볼로지 특성은 TiC 박막내에 sp2 탄소결합의 비율 증가와 관련되어졌다. 특히 sp2 탄소결합은 TiC 박막 증착시 증가된 기판온도와 밀접한 관계가 있으며 기판온도의 증가에 따라 나노결정 클러스터의 크기와 수의 변화와 밀접한 관계가 있음을 확인하였다. 결국 기판온도는 TiC 박막의 트라이볼로지 특성을 향상시켰으며, 전기적 특성 또한 향상시켜 전기철도 집전판에 응용을 위한 소재로 평가할 수 있다.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.3
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• pp.43-49
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• 2007

Thickness of intermetallic compounds and consumption rates of under bump metallurgies (UBMs) were investigated in wafer-level solder bumping with variations of UBM materials and reflow times. In the case of Cu UBM, $0.6\;{\mu}m-thick$ intermetallic compound layer was formed before reflow of Sn solder, and the average thickness of the intermetallic compound layer increased to $4\;{\mu}m$ by reflowing at $250^{\circ}C$ for 450 sec. On the contrary, the intermetallic layer had a thickness of $0.2\;{\mu}m$ on Ni UBM before reflow and it grew to $1.7\;{\mu}m$ thickness with reflowing for 450 sec. While the consumption rates of Cu UBM were 100nm/sec fur 15-sec reflow and 4.50-sec for 450-sec reflow, those of Ni UBM decreased to 28.7 nm/sec for 15-sec reflow and 1.82 nm/sec for 450-sec reflow.