• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.7 no.1
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• pp.63-72
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• 1995

Convective heat transfer in a two-dimensional horizontal and vertical channel with isothermal rectangular beams attached to one adiabatic wall is investigated from the numerical solution of Navier-Stokes and energy equations. The solutions have been obtained for dimensionless beam spacings, S/L=1~4, aspect ratios of beam, H/B=0.25~4, Reynolds numbers, Re=50~1000 and Grashof numbers, $Gr=0{\sim}5{\times}10^4$. The total mean Nusselt number, Nu_T for horizontal and vertical channels shows same value at Gr=0. As Gr increases, Nu_T for horizontal channel increases, but Nu_T for vertical channel shows similar value at S/L=2, H/B=0.25, Re=100. The total mean Nusselt number for horizontal channel is higher than that for vertical channel. As H/B increases, $Nu_T$ for both channel decrease at $Gr=10^4$, Re=100.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.1
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• pp.25-32
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• 2005

In this paper, it is attempted to provide a unified explanation for typical short channel GaAs MESFET’s and SOI-structured Si JFET's behaviors such as: i) drain voltage-induced threshold voltage roll-off, ii) finite output ac resistance beyond the saturation, and iii) weak dependence of the drain saturation current on the channel length. Replacing the conventional GCA with a new assumption that is suggested in order to include the longitudinal field variation, and taking into account the channel current continuity and the field-dependent mobility, we can derive the two-dimensional potential in both depletion region and undepleted conducting channel. Obtained expressions for the threshold voltage and the drain current will be considerably accurate over the entire operating region. Moreover, in comparison with the conventional channel length shortening models, our model seems to be more reasonable in explaining the Early effect.

• Journal of Magnetics
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• v.4 no.4
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• pp.111-114
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• 1999

Numerical calculation for temperature dependence of galvanomagnetic properties of thin bismuth films is pursued. The quasi-two dimensional system is treated in the perturbation formalism of previous study, where realistic screened potential due to impurity is assumed to be the only scattering channel. The potential is separated into pure two dimensional part and the remaining presumed perturbation part. Relaxation time and mobilities for both electron and hole are evaluated, then temperature dependence of the Hall coefficient and magnetoresistance is obtained. The broad minimum of magnetoresistnace is manifested, and the interpretation under the kinetic theory is made. Thickness dependence of the quantities are also shown, which are in good agreement with the expected quantum size effect.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.35 no.12C
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• pp.971-976
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• 2010

We introduce an error correcting 4/6 modulation codes for holographic data storage, and simulate under adding mis-alignment noise. The holographic data storage has two-dimensional intersymbol interference. To increase the channel performance, it is necessary to use modulation code. Furthermore, if the modulation code has trellis structure, error correcting capability is added. The error correcting 4/6 modulation code shows better performance than conventional modulation codes with and without mis-alignment noise.

• Journal of computational fluids engineering
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• v.16 no.1
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• pp.1-6
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• 2011

Flow instability is investigated in a two-dimensional channel with thin baffles placed symmetrically in the vertical direction and periodically in the streamwise dircetion. At low Reynolds numbers, the flow is steady and symmetric. Above a critical Reynolds number, the steady flow undergoes a Hopf bifurcation leading to unsteady periodic flow. As Reynolds number further increases, we observe the onset of secondary instability. At high Reynolds numbers, the two-dimensional periodic flow becomes three dimmensional. To identify the onset of secondary instability, we carry out Floquet stability analysis. We obseved the transition to 3D flow at a Reynolds number of about 125. Also, we computed dominant spanwise wavenumbers near the critical Reynolds number, and visualized vortical structures associated with the most unstable spanwise wave.

• Bulletin of the Korean Mathematical Society
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• v.47 no.1
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• pp.29-37
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• 2010

We establish the existence of weak solutions in an infinite subsonic channel in the self-similar plane to the two-dimensional Burgers system. We consider a boundary value problem in a fixed domain such that a part of the domain is degenerate, and the system becomes a second order elliptic equation in the channel. The problem is motivated by the study of the weak shock reflection problem and 2-D Riemann problems. The two-dimensional Burgers system is obtained through an asymptotic reduction of the 2-D full Euler equations to study weak shock reflection by a ramp.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.29-34
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• 1993

In this paper, we used one-dimensional process simulator, SUPREM-II, and two-dimensional device simulator, MINIMOS 4.0 to extract optimal process parameter that can minimize degradation of device characteristics caused by process parameter variation in the case of short channel nMOSFET and pMOSFET device. From this simulation, we have derieved the relationship between process parameter and device characteristics. Here we have presented a method to extract process parameters from design trend curve(DTC) obtained by process and device simulations. We parameters to verify the validity of the DTC method. The experimental result of 0.8 $\mu\textrm{m}$ channel length devices that have been fabricated with optimal that reduces short channel effects, that is, good drain current-voltage characteristics, low body effects and threshold voltage of 1.0 V, high punchthrough and breakdown voltage of 12 V, low subthreshold swing(S.S) values of 105 mV/decade.

• Transactions on Electrical and Electronic Materials
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• v.17 no.5
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• pp.270-274
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• 2016

This article investigates the use of the Gaussian-channel doping profile for the control of the short-channel effects in the double-gate MOSFET whereby a two-dimensional (2D) quantum simulation was used. The simulations were completed through a self-consistent solving of the 2D Poisson equation and the Schrodinger equation within the non-equilibrium Green’s function (NEGF) formalism. The impacts of the p-type-channel Gaussian-doping profile parameters such as the peak doping concentration and the straggle parameter were studied in terms of the drain current, on-current, off-current, sub-threshold swing (SS), and drain-induced barrier lowering (DIBL). The simulation results show that the short-channel effects were improved in correspondence with incremental changes of the straggle parameter and the peak doping concentration.

• Proceedings of the IEEK Conference
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• 2003.07a
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• pp.234-237
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• 2003

The accuracy of channel estimation significantly affects the performance of coherent OFDM receiver. It is desirable to employ a good channel estimator while requiring low implementation complexity. In this paper, we propose a channel estimator that employs a simple two-dimensional (2-D) moving average (MA) filter as the channel estimation filter. The optimum tap size of the 2-D MA FIR filter is analytically designed in the time and frequency domain in association with the channel condition and pilot signal to interference power ratio. The analytic results can be applied to the design of adaptive channel estimator. Finally, the performance of the proposed channel estimator is verified by computer simulation.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.6
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• pp.38-47
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• 1989

A purely analytical model for HEMT's based on a two dimensional charge control simul-ation[4] is proposed. In this model proper treatment of diffusion effect of electron transport along a 2-DEG (two dimensional electron gas) channel is perfoemed. This diffusion effect is shown to effectively increase the bulk mibility and threshold voltage of the I-V curves compared to the existing models. The channel thickness and gate capacitance are expressed as functions of gate voltages covering subthreshold characteristics of HEMT's analytically. By introducing the finite channel opening and an effiective channel-length modulation, the solpe of the saturation region of the I-V curves ws modeled. The smooth transition of the I-V curves at linear-to-saturation regions of the I-V curves was possible using the continuous Troffimenkoff-type of field dependent mobility. Furthermore, a correction factor f was introduced to account for the finite transition section forming between a GCA and a saturated section. This factor removes large discrepancies in the saturation region of the I-V curve predicted by existing l-dimensional models.