• KSII Transactions on Internet and Information Systems (TIIS)
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• v.13 no.7
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• pp.3447-3469
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• 2019

It is well-known that the cooperative communication and error control technology can improve the network performance, but most existing cooperative MAC protocols have not focused on how to cope with the contention process caused by cooperation and how to reduce the bad influence of channel packet error rate on the system performance. Inspired by this, this paper first modifies and improves the basic rules of the IEEE 802.11 Medium Access Control (MAC) protocol to optimize the contention among the multi-relay in a cooperative ARQ scheme. Secondly, a hybrid ARQ protocol with soft combining is adopted to make full use of the effective information in the error data packet and hence improve the ability of the receiver to decode the data packet correctly. The closed expressions of network performance including throughput and average packet transmission delay in a saturated network are then analyzed and derived by establishing a dedicated two-dimensional Markov model and solving its steady-state distribution. Finally, the performance evaluation and superiority of the proposed protocol are validated in different representative study cases through MATLAB simulations.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.35 no.11A
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• pp.1073-1077
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• 2010

This paper proposes a new 4-dimensional(4D) constellation-rotation(CR) method which obtains diversity gain of 4 under Rayleigh fading channels. The proposed scheme uses two consecutive CR operations for the constellation of QAM signals unlike a conventional 2-dimensional(2D) CR method using only one CR operation. The computer simulation results show that the new method outperforms the conventional one even more as both the channel code rate and the erasure ratio increase. In a point of system flexibility, the proposed scheme has a great advantage since the conventional 2D CR scheme can be simply implemented by only changing rotation angle values used in the proposed scheme.

• Ocean and Polar Research
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• v.23 no.2
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• pp.195-203
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• 2001

A fine-grid (3 km ${\times}$ 3 km), three-dimensional nowcast system of sea levels, currents, temperature, and salinity is being developed for the Taiwan Strait. The project takes a balanced approach relying equally on models and observations, will have the capacity of real-time data assimilation, and is aimed at both practical and scientific applications. To determine boundary conditions and verify model results, eight coastal tide-gauge stations were first established along both sides of the strait. Strait-wide hydrographic surveys were conducted by research vessels. Currents are being measured using bottom-mounted ADCP moorings in a meridional deep channel off southwest Taiwan and along a traverse section in the central part of the strait. In addition to a fine-resolution three-dimensional model of the Taiwan Strait, an adjoint model and a larger-domain two-dimensional model were used to better determine boundary conditions in the northern and southern boundaries of the strait. In the first stage of model development, barotropic tides were successfully simulated in a hindcast mode. The protocol product has been released to general public, including government agencies, universities and general users.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.31 no.3C
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• pp.237-244
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• 2006

I/Q phase unbalance caused by non-ideal circuit components is inevitable physical phenomenons and leads to performance degradation when we implement a practical coherent M-ary phase shift keying(M-PSK) demodulator. In this paper, we present an exact and general expression involving two-dimensional Gaussian Q-functions for the bit error rate(BER) of uniform M-PSK with I/Q phase unbalance over an additive white Gaussian noise(AWGN) channel. First we derive a BER expression for the k-th bit of 8, 16-PSK signal constellations when Gray code bit mapping is employed. Then, from the derived k-th bit BER expression, we present the exact and general average BER expression for M-PSK with I/Q phase unbalance. This result can readily be applied to numerical evaluation for various cases of practical interest in an I/Q unbalanced M-PSK system, because the one- and two-dimensional Gaussian Q-functions can be easily and directly computed using commonly available mathematical software tools.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.6 no.1
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• pp.87-94
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• 1986

Under natural condition, many rivers had shallow and gently curved shape in plane. A two dimensional mathematical model of the flow was a very attractive one. The flow characteristics in bended open channels were analyzed. The mathematical model based on the mass and the momentum equation of the two-dimensional unsteady flow was developed by introducing finite difference method and the double sweep algorithm. For the purpose of the verification of this model, the modeling results were applied to the L.F.M flume and the I.I.H.R flume. The results had a good agreement with the experimental data of the flumes. The results could be more close to the experimental data by controlling Chezy Coefficients in order to reduce the effect of friction around side wall, and be studied the importance of the convective term. The water surface profile, the direction and scale of depth average mean velocity and the path of the thread of maximum velocity in bended open channels could be computed.

• Design & Manufacturing
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• v.15 no.2
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• pp.11-16
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• 2021

Recently, three-dimensional (3D) cell culture systems, which are superior to conventional two-dimensional (2D) vascular systems that mimic the in vivo environment, are being actively studied to reproduce drug responses and cell differentiation in organisms. Conventional two-dimensional cell culture methods (scaffold-based and non-scaffold-based) have a limited cell growth rate because the culture cannot supply the culture medium as consistently as microvessels. To solve this problem, we would like to propose a 3D culture system with an environment similar to living cells by continuously supplying the culture medium to the bottom of the 3D cell support. The 3D culture system is a structure in which microvascular structures are combined under a scaffold (agar, collagen, etc.) where cells can settle and grow. First, we have manufactured molds for the formation of four types of microvessel-mimicking chips: width / height ①100 ㎛ / 100 ㎛, ②100 ㎛ / 50 ㎛, ③ 150 ㎛ / 100 ㎛, and ④ 200 ㎛ / 100 ㎛. By injection molding, four types of microfluidic chips were made with GPPS (general purpose polystyrene), and a 100㎛-thick PDMS (polydimethylsiloxane) film was attached to the top of each microfluidic chip. As a result of observing the flow of the culture medium in the microchannel, it was confirmed that when the aspect ratio (height/width) of the microchannel is 1.5 or more, the fluid flows from the inlet to the outlet without a backflow phenomenon. In addition, the culture efficiency experiments of colorectal cancer cells (SW490) were performed in a 3D culture system in which PDMS films with different pore diameters (1/25/45 ㎛) were combined on a microfluidic chip. As a result, it was found that the cell growth rate increased up to 1.3 times and the cell death rate decreased by 71% as a result of the 3D culture system having a hole membrane with a diameter of 10 ㎛ or more compared to the conventional commercial. Based on the results of this study, it is possible to expand and build various 3D cell culture systems that can maximize cell culture efficiency by cell type by adjusting the shape of the microchannel, the size of the film hole, and the flow rate of the inlet.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.12
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• pp.103-112
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• 2005

In this paper, in order to derive the current-voltage characteristics of n-AlGaN/GaN HEMTs with the piezoelectric and spontaneous polarizations, we suggested analytical solutions for the two-dimensional Poisson equation in the AlGaN and GaN regions by taking into account the longitudinal field variation, field-dependent mobility, and the continuity condition of the channel current flowing in the quantum well. Obtained expressions for long and short channel devices would be applicable to the entire operating regions in a unified manner. Simulation results show that the drain saturation current increases and the cutoff voltage decreases as drain voltage increases. Compared with the conventional models, the present model seems to provide more reasonable explanation for the drain-induced threshold voltage roll-off and the channel length modulation effect.

• Transactions of the Korean Society of Mechanical Engineers
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• v.15 no.1
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• pp.308-322
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• 1991

A set of experiments of Counter-Current Flow Limit(CCFL or Flooding) was performed to improve the drawbacks of Wallis' Correlation which neglects the effects of channel size, channel length, injection method and the boundary conditions at the inlet of liquid and gas phase. In these experiments using water and air, the followings were found ; (i) The effects of channel size and length were quite significant. In large tubes(D>20mm), the flooding front occurred at the bottom of the channel and when the gas flow increased the front moved upward ; however, in small tubes(D<20mm), there were no upward movement of flooding front and the flooding just occurred at the liquid inlet. (ii) The effect of water inlet device was not as significant as that of channel length though the inlet boundary conditions could affect the flow development and flooding afterward. (iii) Once the flooding front reached the inlet of water injection device, an newly reduced flow condition was set up and resulted in another flooding corresponding to the new condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.131-131
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• 2009

Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility ($\sim900cm^2/Vs$). These electronic properties allow high breakdown voltage, high-speed switching capability, and high temperature operation compared to Si devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances, the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. This paper studies different channel dimensons ($L_{CH}$ : $0.5{\mu}m$, $1\;{\mu}m$, $1.5\;{\mu}m$) and their effect on the the device transient characteristics. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship. with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. We observe an increase in the turn-on and turn-off time with increasing the channel length. The switching time in 4H-SiC DMOSFETs have been found to be seriously affected by the various intrinsic parasitic components, such as gate-source capacitance and channel resistance. The intrinsic parasitic components relate to the delay time required for the carrier transit from source to drain. Therefore, improvement of switching speed in 4H-SiC DMOSFETs is essential to reduce the gate-source capacitance and channel resistance.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.4
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• pp.789-794
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• 2017

Subthreshold current model is presented using analytical potential distribution of junctionless cylindrical surrounding-gate (CSG) MOSFET and threshold voltage shift is analyzed by this model. Junctionless CSG MOSFET is significantly outstanding for controllability of gate to carrier flow due to channel surrounded by gate. Poisson's equation is solved using parabolic potential distribution, and subthreshold current model is suggested by center potential distribution derived. Threshold voltage is defined as gate voltage corresponding to subthreshold current of $0.1{\mu}A$, and compared with result of two dimensional simulation. Since results between this model and 2D simulation are good agreement, threshold voltage shift is investigated for channel dimension and doping concentration of junctionless CSG MOSFET. As a result, threshold voltage shift increases for large channel radius and oxide thickness. It is resultingly shown that threshold voltage increases for the large difference of doping concentrations between source/drain and channel.