• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.10 no.6
• /
• pp.243-249
• /
• 2010

In this thesis, in order to a equivalent circuit-analytical study for a symmetric double gate type MOSFET, we slove analytically the 2D Poisson's equation in a a silicon body. To solve the threshold voltage in a symmetric double gate type MOSFET from the derived expression for the surface potential which the two-dimensional potential distribution of a symmetric double gate type MOSFET is assumed approximately. This thesis can use short and long channel in a silicon body we introduce a new the threshold voltage model in a symmetric double gate type MOSFET and measure it the distance about the range of channel length up to 0.1 [${\mu}m$].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.9
• /
• pp.671-676
• /
• 2012

In this paper, TCAD assessment of 30-V class n-channel EDMOS (extended drain metal-oxide-semiconductor) transistors with DWFG (dual work function gate) structure are described. Gate of the DWFG EDMOS transistor is composed of both p- and n-type doped region on source and drain side. Additionally, lengths of p- and n-type doped gate region are varied while keeping physical channel length. Two-dimensional device structures are generated trough TSUPREM-4 and their electrical characteristics are investigated with MEDICI. The DWFG EDMOS transistor shows improved electrical characteristics than conventional device - i.e. higher transconductance ($g_m$), better drain output current ($I_{ON}$), reduced specific on-resistances ($R_{ON}$) and higher breakdown characteristics ($BV_{DSS}$).

• Journal of Electrical Engineering and Technology
• /
• v.10 no.3
• /
• pp.1131-1137
• /
• 2015

Gallium nitride (GaN) is a promising material for next-generation high-power applications due to its wide bandgap, high breakdown field, high electron mobility, and good thermal conductivity. From a structure point of view, the vertical device is more suitable to high-power applications than planar devices because of its area effectiveness. However, it is challenging to obtain a completely upright vertical structure due to inevitable sidewall slope in anisotropic etching of GaN. In this letter, we design and analyze the enhancement-mode n-channel vertical GaN MOSFET with variation of sidewall gate angle by two-dimensional (2D) technology computer-aided design (TCAD) simulations. As the sidewall slope gets closer to right angle, the device performances are improved since a gradual slope provides a leakage current path through the bulk region.

• Journal of computational fluids engineering
• /
• v.22 no.1
• /
• pp.67-80
• /
• 2017

The high-speed bypass effect on the heat exchanger performance has been investigated numerically. The plate-fin type heat exchanger was modeled using two-dimensional porous approximation for the fin region. Governing equations of mass, momentum, and energy equations for compressible turbulent flow were solved using ideal-gas assumption for the air flow. Various bypass-channel height were considered for Mach numbers ranging 0.25-0.65. Due to the existence of the fin in the bypass channel, the main flow tends to turn into the core region of the channel, which results in the distorted velocity profile downstream of the fin region. The boundary layer thickness, displacement thickness, and the momentum thickness showed the variation of mass flow through the fin region. The mass flow variation along the fin region was also shown for various bypass heights and Mach numbers. The volumetric entropy generation was used to assess the loss mechanism inside the bypass duct and the fin region. Finally, the correlations of the friction factor and the Colburn j-factor are summarized.

• Journal of computational fluids engineering
• /
• v.10 no.2
• /
• pp.30-37
• /
• 2005

To evaluate LBM we performed the simulation of the unsteady two dimensional flow over a square cylinder in a channel in moderate Reynolds number range, $100\~500$ by using LBM and Fractional-Step method. Frist of all we compared LBM solution of Poiseuille flow applied Farout and periodic boundary conditions with the analytical solution to verify the applicability of the boundary conditions. For LBM simulation the calculation domain was formed by structured 500x100 grids. Prescribed maximum velocity and density inlet and Farout boundary conditions were imposed on the in-out boundaries. Bounceback boundary condition was applied to the channel and the cylinder waifs. The flow patterns and vortex shedding strouhal numbers were compared with previous research results. The flow patterns by LBM were in agreement with the flow pattern by fractional step method. Furthermore the strouhal number computed by LBM simulation result was more accurate than that of fractional step method through the comparison of the previous research results.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.287-287
• /
• 2010

We report a new direct patterning method, called liquid bridge-mediated nanotransfer molding (LB-nTM), for the formation of two- or three-dimensional structures with feature sizes between tens of nanometers and tens of micron over large areas. LB-nTM is based on the direct transfer of various materials from a mold to a substrate via a liquid bridge between them. This procedure can be adopted for automated direct printing machines that generate patterns of functional materials with a wide range of feature sizes on diverse substrates. Arrays of TIPS-PEN TFTs were fabricated on 4" polyethersulfone (PES) substrates by LB-nTM using PDMS molds. An inverted staggered structure was employed in the TFT device fabrication. A 150 nm-thick indium-tin oxide (ITO) gate electrode and a 200 nm-thick SiO2dielectric layer were formed on a PES substrate by sputter deposition. An array of TIPS-PEN patterns (thickness: 60 nm) as active channel layers was fabricated on the substrate by LB-nTM. The nominal channel length of the TIPS-PEN TFT was 10 mm, while the channel width was 135 mm. Finally, the source and drain electrodes of 200 nm-thick Ag were defined on the substrate by LB-nTM. The TIPS-PEN TFTs can endure strenuous bending and are also transparent in the visible range, and therefore potentially useful for flexible and invisible electronics.

• Journal of the Korean Society of Hazard Mitigation
• /
• v.9 no.2
• /
• pp.53-57
• /
• 2009

The dividing flow in an open channel has a number of distinctive characteristics. One of these is that the separation zone interacts with a secondary motion along the inner wall of a branch channel, generating sediment accumulation. To investigate this phenomenon, a two-dimensional numerical model based on the shallow-water equations, RMA2, which calculates water surface elevations and horizontal-velocity components, was used to analyze the dividing flow. The obtained numerical results fully coincide with the laboratory measurements reported by Hsu et al.(2002). For the analysis of the numerical results, a separation zone-discharge rate relationship was proposed. To reduce the size of a separation zone, the topographies of diagonal and curved edges were proposed, smoothly connecting the upstream corner to branch channel.

• Geophysics and Geophysical Exploration
• /
• v.7 no.1
• /
• pp.7-13
• /
• 2004

In this paper, we demonstrate that Common Mid-Point (CMP) cross-correlation gathers of multi-channel and multi-shot surface waves give accurate phase-velocity curves, and enable us to reconstruct two-dimensional (2D) velocity structures with high resolution. Data acquisition for CMP cross-correlation analysis is similar to acquisition for a 2D seismic reflection survey. Data processing seems similar to Common Depth-Point (CDP) analysis of 2D seismic reflection survey data, but differs in that the cross-correlation of the original waveform is calculated before making CMP gathers. Data processing in CMP cross-correlation analysis consists of the following four steps: First, cross-correlations are calculated for every pair of traces in each shot gather. Second, correlation traces having a common mid-point are gathered, and those traces that have equal spacing are stacked in the time domain. The resultant cross-correlation gathers resemble shot gathers and are referred to as CMP cross-correlation gathers. Third, a multi-channel analysis is applied to the CMP cross-correlation gathers for calculating phase velocities of surface waves. Finally, a 2D S-wave velocity profile is reconstructed through non-linear least squares inversion. Analyses of waveform data from numerical modelling and field observations indicate that the new method could greatly improve the accuracy and resolution of subsurface S-velocity structure, compared with conventional surface-wave methods.

• Korean Journal of Fisheries and Aquatic Sciences
• /
• v.27 no.5
• /
• pp.572-582
• /
• 1994

To investigate water mass structure and DO(Dissolved Oxygen) distribution in Chinhae Bay, temperature, salinity and DO were observed in the bay in summer and winter from 1990 to 1993, and two-dimensional tidal current and parameter log($H/U^3$) were computed. Shallow water fronts in the bay were formed in summer in Kaduk channel and the central part of the bay having log($H/U^3$) values of $2.0{\sim}2.5$. Oxygen deficiency at the bottom layer in summer occurred in the western and northern part of the bay with weak tidal current, where the value of log($H/U^3$) was more than about 3.5 and $M_2$ tidal current was less than about 20 cm/s. DO concentration at the bottom layer of Kaduk channel and the central channel of the bay having the strong tidal current was more than about 3.5 mg/l. The isolines of DO concentration were nearly parallel to the isovelocity, and the concentrations correlated with the frontal location. The frontal location and DO distribution were influenced by tidal range, river inflow and meteorological conditions, and also correlated with bottom slope characteristics.

• Journal of Electrical Engineering and Technology
• /
• v.7 no.2
• /
• pp.236-239
• /
• 2012

In this paper, we study the transient characteristics of 4H-SiC DMOSFETs with different interface charges to improve the turn-on rising time. A physics-based two-dimensional mixed device and circuit simulator was used to understand the relationship between the switching characteristics and the physical device structures. As the $SiO_2$/SiC interface charge increases, the current density is reduced and the switching time is increased, which is due primarily to the lowered channel mobility. The result of the switching performance is shown as a function of the gate-to-source capacitance and the channel resistance. The results show that the switching performance of the 4H-SiC DMOSFET is sensitive to the channel resistance that is affected by the interface charge variations, which suggests that it is essential to reduce the interface charge densities in order to improve the switching speed in 4H-SiC DMOSFETs.