• Title/Summary/Keyword: Turn-on and Turn-off

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New ZVZCT Bidirectional DC-DC Converter Using Coupled Inductors

  • Qian, Wei;Zhang, Xi;Li, Zhe;Jin, Wenqiang;Wiedemann, Jochen
    • Journal of Power Electronics
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    • v.19 no.1
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    • pp.11-23
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    • 2019
  • In this study, a novel zero voltage zero current transition (ZVZCT) bidirectional DC-DC converter is proposed by employing coupled inductors. This converter can turn the main switch on at ZVZCT and it can turn it off with zero voltage switching (ZVS) for both the boost and buck modes. These characteristics are obtained by using a simple auxiliary sub-circuit regardless of the power flow direction. In the boost mode, the auxiliary switch achieves zero current switching (ZCS) turn-on and ZVS turn off. Due to the coupling inductors, this converter can make further efficiency improvements because the resonant energy in the capacitor or inductor can be transferred to the load. The main diode operates with ZVT turn-on and ZCS turn-off in the boost mode. For the buck mode, there is a releasing circuit to conduct the currents generated by the magnetic flux leakage to the output. The auxiliary switch turns on with ZCS and it turns off with ZVT. The main diode also turns on with ZVT and turns off with ZCS. The design method and operation principles of the converter are discussed. A 500 W experimental prototype has been built and verified by experimental results.

The Switching Characteristics of Series-Connected Power Transistors (전력용 트랜지스터의 직렬연결시 스윗칭 특성)

  • 서범석;이택기;현동석
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.41 no.6
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    • pp.600-606
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    • 1992
  • The series connection of power switching semiconductor elements is essential when a high voltage converter is made, so researches are being conducted to further develop this technology. In the series connection of power switching semiconductor elements, the main problem is that simultaneous conduction at turn-on and simultaneous blocking at turn-off together with voltage balancing are unattainable because of the difference of their switching characteristics. In this paper a novel series connection algorithm is proposed, which can implement not only the synchronization of the points of turn-on and turn-off time but the dynamic voltage balancing in spite of the difference of each switching characteristics. The proposed method is that the compensated control signal is attained from the voltage feedback signal and applied to the series-connected power transistors independently. Computer simulation and experimental results verify its validity.

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Static and Transient Simulation of High Power IGCT Devices (대용량 IGCT 소자의 정상상태 및 과도상태 특성 해석)

  • Kim, Sang-Cheol;Kim, Hyung-Woo;Kim, Eun-Dong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05c
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    • pp.213-216
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    • 2003
  • Recently a new high power device GCT (Gate Commutated Turn-off) thyristor has been successfully introduced to high power converting application areas. GCT thyristor has a quite different turn-off mechanism to the GTO thyristor. All main current during turn-off operation is commutated to the gate. Therefore, IGCT thyristor has many superior characteristics compared with GTO thyristor; especially, snubberless tum-off capacibility and higher turn-on capacibility. The basic structure of the GeT thyristor is same as that of the GTO thyristor. This makes the blocking voltage higher and controllable on-state current higher. The turn-off characteristic of the GCT thyristor is influenced by the minority carrier lifetime and the performance of the gate drive unit. In this paper, we present turn-off characteristics of the 2.5kV PT(Punch-Through) type GCT as a function of the minority carrier lifetime and variation of the doping profile shape of p-base region.

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An Improved Gate Control Scheme for Overvoltage Clamping Under High Power IGBTs Switching (대용량 IGBT 스위칭 시 과전압 제한을 위한 향상된 게이트 구동기법)

  • 김완중;최창호;이요한;현동석
    • The Transactions of the Korean Institute of Power Electronics
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    • v.3 no.3
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    • pp.222-230
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    • 1998
  • This paper proposes a new gate drive circuit for high power IGBTs which can reduce the harmful effect of reverse recovery current at turn-on and actively suppress the overvoltage across the driven IGBT at turn-off without a snubber circuit. The turn-on scheme decreases the rising rate of the collector current by inereasing the input capacitance at turn-on transient when the gate-emitter voltage goes above threshold voltage. It results in soft transient of the reverse recovery current with no variation in turn-on delay time. The turn-off driving scheme has adaptive feature to the amplitude of collector current, so that the overvoltage can be limited much effectively at the fault collector current. Experimental results under various normal and fault conditions prove the effectiveness of the proposed circuit.

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The Maximum Torque/Efficiency of SRM Driving for Self-Tuning Control (자기동조 제어에 의한 SRM의 최대 토크/효율 운전)

  • Seo J.Y.;Cha H.R.;Kim K.H.;Lim Y.C.;Jong D.H.
    • Proceedings of the KIPE Conference
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    • 2003.07b
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    • pp.677-680
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    • 2003
  • The control of the SRM(Switched Reluctance Motor) is usually based on the non-linear inductance profiles with positions. So determination of optimal switching angle is very different. we present self-tuning control of SRM for maximum torque and efficiency with phase current and shaft position sensor During the sample time, micro-controller checks the number of pre-checked pulse. After micro-controller calculates between two data, it move forward or backward turn-off angle. When the turn-off angle is fixed optimal turn-off angle, turn-on angle moves forward or backward by a step using self-tuning control method. And then, optimal turn-off angle is searched once again. As such a repeating process, turn-on/off angle is moves automatically to obtain the maximum torque and efficiency. The experimental results are presented to validate the self-tuning algorithm.

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Design Consideration for Structure of 2500-4500V RC-GCT

  • Kim E. D.;Kim S. C.;Zhang C. L.;Kim N. K.;Bai J. B.;Li J. H.;Lu J. Q.
    • Proceedings of the KIPE Conference
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    • 2001.10a
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    • pp.36-38
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    • 2001
  • A basic structure of 2500V-4500V reverse-conducting GCT (RC-GCT) is given in this paper. The punch-through type (PT) is adopted for narrow N-base with high resistivity so that the fast turn-off and low on-state voltage can be achieved. The photo mask design was made upon the both turn-off performance and solution of separation between GCT and integrated freewheeling diode (FWD) part. The turn-on and turn-off characteristics for reserve-conducting gate commutated thyristors (RC-GCTs) were investigated by ISE simulation. Additionally, the local carrier lifetime control by proton irradiation was adopted so as not only to obtain the reduction of turn-off losses of GCT but also to reach a soft reverse recovering characteristics of FWD

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A Sensorless Switched Reluctance Drive System Based on the Improved Simplified Flux Method

  • Li, Zhenguo;Song, Andong;Ahn, Jin-Woo
    • Journal of international Conference on Electrical Machines and Systems
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    • v.1 no.4
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    • pp.477-482
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    • 2012
  • This paper describes a new rotor position sensorless control method for SRM drives based on an improved simplified flux linkage method. In the traditional simplified flux linkage method, every phases take turns conduction and current chopping control method is used. Every phases take turns conduction means turning on the incoming working phase while turning off the working phase. This conduction mode causes coupling between turn-on and turn-off angles, which goes against optimal efficiency or torque ripple minimization with sensorless speed control. In the improved simplified flux linkage method, turn-off angle is calculated by flux loop, the turn-on angle can be given arbitrarily and has no relations with the turn-off angle, and the current chopping control method is used. The speed and rotor position can be estimated then. Finally, a sensorless SRM speed control system and an experiment platform with DSP are built and validity of this method is confirmed.

Study on changes in electrical and switching characteristics of NPT-IGBT devices by fast neutron irradiation

  • Hani Baek;Byung Gun Park;Chaeho Shin;Gwang Min Sun
    • Nuclear Engineering and Technology
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    • v.55 no.9
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    • pp.3334-3341
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    • 2023
  • We studied the irradiation effects of fast neutron generated by a 30 MeV cyclotron on the electrical and switching characteristics of NPT-IGBT devices. Fast neutron fluence ranges from 2.7 × 109 to 1.82 × 1013 n/cm2. Electrical characteristics of the IGBT device such as I-V, forward voltage drop and additionally switching characteristics of turn-on and -off were measured. As the neutron fluence increased, the device's threshold voltage decreased, the forward voltage drop increased significantly, and the turn-on and turn-off time became faster. In particular, the delay time of turn-on switching was improved by about 35% to a maximum of about 39.68 ns, and that of turn-off switching was also reduced by about 40%-84.89 ns, showing a faster switching.

Characteristics Analysis According to Switching of Switched Reluctance Generator (스위치드 릴럭턴스 발전기의 스위칭에 따른 특성)

  • Oh, Jae-Seok;Oh, Ju-Hwan;Kwon, Byung-Il
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.57 no.8
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    • pp.1356-1361
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    • 2008
  • A switched reluctance generator(SRG) has simple magnetic structure, and needs simple power electronic driving circuit. But, a SRG are no windings or permanent magnets on the rotor, and there are concentrated windings placed around each salient pole on the stator. Because of the characteristics of time-sharing excitation, the control of SRG is very flexible. And there are several parameters for controlling SRG, such as switch turn-on angle, switch turn-off angle, and exciting voltage and controlling mode, all these will affect the generation greatly. A SRG has positive torque at increasing inductance region and negative torque at decreasing inductance region. In this paper, we studied characteristics about the switch turn-on and off angles according to switch method for constant output voltage of the fixed speed SRG. It is the acoustic noise and torque ripple characteristics. Characteristics for a switch angle and method are presented by experiment using a 50W SRG with 12/8 poles.

Zero-Current-Switching in Full-Bridge DC-DC Converters Based on Activity Auxiliary Circuit

  • Chu, Enhui;Lu, Ping;Xu, Chang;Bao, Jianqun
    • Journal of Power Electronics
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    • v.19 no.2
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    • pp.353-362
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    • 2019
  • To address the problem of circulating current loss in the traditional zero-current switching (ZCS) full-bridge (FB) DC/DC converter, a ZCS FB DC/DC converter topology and modulation strategy is proposed in this paper. The strategy can achieve ZCS turn on and zero-voltage and zero-current switching (ZVZCS) turn off for the primary switches and realize ZVZCS turn on and zero-voltage switching (ZVS) turn off for the auxiliary switches. Moreover, its resonant circuit power is small. Compared with the traditional phase shift full-bridge converter, the new converter decreases circulating current loss and does not increase the current stress of the primary switches and the voltage stress of the rectifier diodes. The diodes turn off naturally when the current decreases to zero. Thus, neither reverse recovery current nor loss on diodes occurs. In this paper, we analyzed the operating principle, steady-state characteristics and soft-switching conditions and range of the converter in detail. A 740 V/1 kW, 100 kHz experimental prototype was established, verifying the effectiveness of the converter through experimental results.