• Asia Marketing Journal
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• v.16 no.3
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• pp.77-100
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• 2014

Many researchers have analyzed the relationship between the financial success patterns of a motion picture and many other factors, such as the production cost, marketing, stars, awards, reviews, genre, and rating. Through these studies, many researchers and investors concluded that big budgets to make a blockbuster movie can serve as an insurance policy to meet their ROI; thus the box office is dominated by blockbuster movies. High-budget blockbuster movies are more likely to receive attention because these movies are more recognizable given their high expenses for production and casting. Therefore, audiences choose blockbusters in an effort to reduce the searching cost and to mitigate the possibility of a regrettable choice. This behavior of consumers, in turn, causes distributors to allocate screens for blockbusters, resulting in "concentration of blockbuster consumption." As such, low-budget films cannot easily become popular due to the lack of distribution. Indeed, low-budget films released on a small number of screens often end up becoming dismal failures. However, there are exceptional examples which are contrary to the general idea in the movie industry that a big budget and showings on a large number of screens can guarantee the success of a movie. Although researchers have attempted to analyze the performances of movies with small budgets, such movies are likely to be regarded as outliers and then be entirely discarded, as they are far from the 'three-sigma' range, especially given that previous research methodologies could not explain the financial success of such unique examples. This study attempts to explain the financial success at the box office of low-budget movies by applying the concept of the tunnel effect in quantum mechanics, as the phenomenon found in the movie industry is similar to a particle's movement in quantum physics. The tunneling effect is a phenomenon by which a particle without enough energy to pass over a potential barrier tunnels through it. Adopting the analogy, this study draws a tunneling probability function and cultural constant to forecast other outliers using the Schrödinger equation. Moreover, the study finds that word-of-mouth creates in the movie industry this phenomenon of finding outliers.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.764-767
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• 2007

We investigated the field emission of single carbon nanotube including the anode effect by calculating the tunneling probability of an electron. The experimental results from this study were in agreement with our theoretical calculations. The constant enhancement factor was calculated using an approximation of the potential barrier.

• Journal of information and communication convergence engineering
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• v.16 no.1
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• pp.43-47
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• 2018

The existing modeling of avalanche dominated breakdown in double gate MOSFETs (DGMOSFETs) is not relevant for 10 nm gate lengths, because the avalanche mechanism does not occur when the channel length approaches the carrier scattering length. This paper focuses on the punch through mechanism to analyze the breakdown characteristics in 10 nm DGMOSFETs. The analysis is based on an analytical model for the thermionic-emission and tunneling currents, which is based on two-dimensional distributions of the electric potential, obtained from the Poisson equation, and the Wentzel-Kramers-Brillouin (WKB) approximation for the tunneling probability. The analysis shows that corresponding flat-band-voltage for fixed threshold voltage has a significant impact on the breakdown voltage. To investigate ambiguousness of number of dopants in channel, we compared breakdown voltages of high doping and undoped DGMOSFET and show undoped DGMOSFET is more realistic due to simple flat-band-voltage shift. Given that the flat-band-voltage is a process dependent parameter, the new model can be used to quantify the impact of process-parameter fluctuations on the breakdown voltage.

• ETRI Journal
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• v.21 no.4
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• pp.23-28
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• 1999

In this paper, we analyze the performance benefits of broadband ATM networks when the call control and management flows are separated from user data flows. The virtual path tunneling concept for control and management flows are applied to the same physical ATM networks. The behaviors of channel throughput and transfer delay are analyzed. It results that the proposed virtual short-cut paths can maintain the network being stable with acceptable bandwidth. They are very useful to provide the stable control and management capabilities for Internet and mobile applications in the broadband ATM networks. In our numerical results, the effective throughputs of the proposed virtual shout-ut channel are about three times than those of end-to-end user data channels with hop distances of 10, and about two times than those with hop distance of 5 when the link blocking probability increases to 0.1. It concludes that the effective channel bandwidth are greatly reduced down while physical links are not stable and user traffic flows are occasionally overflowed.

• Geotechnical Engineering
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• v.13 no.6
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• pp.107-122
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• 1997

This paper presents a ground surface settlement prediction method for shield tunneling in cohesive soils. In order to develop the method, a parametric study on shield tunneling was performed by using a threetimensional elasto-plastic finite element analysis, which can simulate the construction procedure. By using the results of the finite element analysis, the ground movement mechanism was investigated and a base which relates the ground surface settlement and iuluencing factors was formed. The data base was then used to formulate semi -empirical equations for both surface settlement ratio above tunnel face and imflection point by means of a regression analysis. Furthermore, a prediction method for transverse and longitudinal surface settlement profiles was suggested by using the leveloped equations in conjunction with the normal probability curve. Effectiveness of the developed method was illustrated by comparing settlement profiles obtained by using the developed method with the results of finite element analysis and measured data. Based on the comparison, it was concluded that the developed method can be effectively rosed for practical applications at least within the conditions investigated.

• Journal of Korean Tunnelling and Underground Space Association
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• v.18 no.3
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• pp.305-318
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• 2016

This study is to evaluate the uncertainty of the soil parameters associated with the Gap parameter during shield TBM tunnel excavation of ${\bigcirc}{\bigcirc}$ International Airport Terminal 2 connecting railway construction basic design. And This study is to evaluate the adequacy of the shield TBM design by performing a reliability analysis of the Surface settlement. In addition, By analyzing the reliability indices of the design constants and Sensitivity probability of failure to be used in designing an integer parameter Gap, and By evaluating the design constants of a great influence on the surface subsidence, it was to provide a basis for carrying out an optimum design.

• Journal of the Korean Magnetics Society
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• v.14 no.3
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• pp.99-104
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• 2004

We have studied to understand the barrier and interface qualities and structural changes through measuring temperature dependent spin-polarization as functions of plasma oxidation time and annealing time. Magnetic tunnel junctions consisting of SiO2$_2$/Ta 5/CoFe 17/IrMn 7.5/CoFe 5/Al 1.6-Ox/CoFe 5/Ta 5 (numbers in nm) were deposited and annealed when necessary. A 30 s,40 s oxidized sample showed the lowest spin-polarization values. It is presumed that tunneling electrons were depolarized and scattered by residual paramagnetic Al due to under-oxidation. On the contrary, a 60s, 70 s oxidized sample might have experienced over-oxidation, where partially oxidized magnetic dead layer was formed on top of the bottom CoFe electrode. The magnetic dead layer is known to increase the probability of spin-flip scattering. Therefore it showed a higher temperature dependence than that of the optimum sample (50 s oxidation). temperature dependence of 450 K annealed samples was improved when the as-deposited one compared. But the sample underwent 475 K and 500 K annealing exhibits inferior temperature dependence of spin-polarization, indicating that the over-annealed sample became microstucturally degraded.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.3
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• pp.458-464
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• 2017

A magnetic tunnel junction (MTJ) based ternary content addressable memory (TCAM) is proposed which provides non-volatility. A unit cell of the TCAM has two MTJ's and 4.875 transistors, which allows the realization of TCAM in a small area. The equivalent resistance of parallel connected multiple unit cells is compared with the equivalent resistance of parallel connected multiple reference resistance, which provides the averaging effect of the variations of device characteristics. This averaging effect renders the proposed TCAM to be variation-tolerant. Using 65-nm CMOS model parameters, the operation of the proposed TCAM has been evaluated including the Monte-Carlo simulated variations of the device characteristics, the supply voltage variation, and the temperature variation. With the tunneling magnetoresistance ratio (TMR) of 1.5 and all the variations being included, the error probability of the search operation is found to be smaller than 0.033-%.

• Journal of Applied Reliability
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• v.10 no.1
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• pp.65-71
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• 2010

NAND-type SONOS with a separated double-gate FinFET structure (SDF-Fin SONOS) flash memory devices are proposed to reduce the unit cell size of the memory device and increase the memory density in comparison with conventional non volatile memory devices. The proposed memory device consists of a pair of control gates separated along the direction of the Fin width. There are two unique alternative technologies in this study. One is a channel doping method and the other is an oxide thickness variation method, which are used to operate the SDF-Fin SONOS memory device as two-bit. The fabrication processes and the device characteristics are simulated by using technology comuter-adided(TCAD). The simulation results indicate that the charge trap probability depends on the different channel doping concentration and the tunneling oxide thickness. The proposed SDG-Fin SONOS memory devices hold promise for potential application.

• Geomechanics and Engineering
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• v.29 no.3
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• pp.331-338
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• 2022

Face stability analyses provides the most probable failure mechanisms and the understanding about parameters that need to be considered for the evaluation of ground movements caused by tunneling. After the Upper Bound Method (UBM) solution which can consider the influence of seepage forces and depth-dependent effective cohesion is verified with the numerical experiments, the probabilistic model is proposed to calculate the unbiased limiting tunnel collapse pressure. A reliability analysis of a shallow circular tunnel driven by a pressurized shield in a frictional and cohesive soil is presented to consider the inherent uncertainty in the input parameters and the proposed model. The probability of failure that exceeding a specified applied pressure at the tunnel face is estimated. Sensitivity and importance measures are computed to identify the key parameters and random variables in the model.