• Title/Summary/Keyword: Tunnel current effect

Search Result 105, Processing Time 0.02 seconds

Research on Silicon Nanowire Transistors for Future Wearable Electronic Systems (차세대 웨어러블 전자시스템용 실리콘 나노선 트랜지스터 연구)

  • Im, Kyeungmin;Kim, Minsuk;Kim, Yoonjoong;Lim, Doohyeok;Kim, Sangsig
    • Vacuum Magazine
    • /
    • v.3 no.3
    • /
    • pp.15-18
    • /
    • 2016
  • In future wearable electronic systems, 3-dimensional (3D) devices have attracted much attention due to their high density integration and low-power functionality. Among 3D devices, gate-all-around (GAA) nanowire transistor provides superior gate controllability, resulting in suppressing short channel effect and other drawbacks in 2D metal-oxide-semiconductor field-effect transistor (MOSFET). Silicon nanowires (SiNWs) are the most promising building block for GAA structure device due to their compatibility with the current Si-based ultra large scale integration (ULSI) technology. Moreover, the theoretical limit for subthreshold swing (SS) of MOSFET is 60 mV/dec at room temperature, which causes the increase in Ioff current. To overcome theoretical limit for the SS, it is crucial that research into new types of device concepts should be performed. In our present studies, we have experimentally demonstrated feedback FET (FBFET) and tunnel FET (TFET) with sub-60 mV/dec based on SiNWs. Also, we fabricated SiNW based complementary TFET (c-TFET) and SiNW complementary metal-oxide-semiconductor (CMOS) inverter. Our research demonstrates the promising potential of SiNW electronic devices for future wearable electronic systems.

A Study on Determination for Location of Localizer Antenna under Area Restrictive Conditions at Domestic P-Airport (국내 P공항의 부지 제한조건을 고려한 로컬라이저의 최적위치 선정에 관한 연구)

  • Cho, Hwan-Kee;Kim, Jong-Bum;Song, Byung-Heum
    • Journal of the Korean Society for Aviation and Aeronautics
    • /
    • v.23 no.2
    • /
    • pp.7-14
    • /
    • 2015
  • This paper deals with an optimal determination process for the built-in location of localizer under restrictive siting area conditions of a domestic P-airport. Aerodynamic forces and moments acting on the localizer structure can be used a reference to find the safe distance from jet blast and the position at which the reasonable structural loading is applied. Wind tunnel experiment is conducted to measure aerodynamic loadings. The finite element analysis for structural deformation is employed to get the information of structural failure. A new localizer's position is determined by considering aerodynamic loading, structural strength and thermal loading due to jet blast. Deflector effect was also investigated in this study. In conclusion, the location of localizer can be placed at shorter than the current position and greatly decreased if the deflector is applied at the front of localizer.

The Study on Countermeasures of Electromagnetic Force by Three Phase Short-Circuit Test of Underground Transmission Cable (송전케이블 삼상단락 실증시험을 통한 전자력 대책방안 연구)

  • Kang, Ji-Won;Park, Hung-Sok;Yoon, Jong-Keon;Kim, Yang-Sang;Hong, Dong-Suk;Chang, Woo-Seog
    • The Transactions of The Korean Institute of Electrical Engineers
    • /
    • v.58 no.12
    • /
    • pp.2342-2348
    • /
    • 2009
  • Even though underground transmission cable is an essential transmission method to supply stable power for downtown and population center, the interaction of electromagnetic force by fault current is very large comparing to overhead transmission line due to restricted installation space such as tunnel, and close consideration is required for it. This paper presents countermeasures to reduce and release the effect of electromagnetic force with rope binding and installation of spacer and describes its efficacy through three phase short-circuit test, which will be utilized as basic materials for improvement and development of cleat, hanger, etc. to reduce and release effect of electromagnetic force in the future.

Numerical simulation of wind loading on roadside noise mitigation structures

  • TSE, K.T.;Yang, Yi;Shum, K.M.;Xie, Zhuangning
    • Wind and Structures
    • /
    • v.17 no.3
    • /
    • pp.299-315
    • /
    • 2013
  • Numerical research on four typical configurations of noise mitigation structures and their characteristics of wind loads are reported in this paper. The turbulence model as well the model parameters, the modeling of the equilibrium atmospheric boundary layer, the mesh discretization etc., were carefully considered in the numerical model to improve the numerical accuracy. Also a numerical validation of one configuration with the wind tunnel test data was made. Through detailed analyses of the wind load characteristics with the inclined part and the wind incidence angle, it was found that the addition of an inclined part to a noise mitigation structure at-grade would affect the mean nett pressure coefficients on the vertical part, and that the extent of this effect depends on the length of the inclined part itself. The magnitudes of the mean nett pressure coefficients for both the vertical part and the inclined part of noise mitigation structure at-grade tended to increase with length of inclined part. Finally, a comparison with the wind load code British/European Standard BS EN 1991-1-4:2005 was made and the envelope of the mean nett pressure coefficients of the noise mitigation structures was given for design purposes. The current research should be helpful to improve current wind codes by providing more reasonable wind pressure coefficients for different configurations of noise mitigation structures.

2D Tunneling Effect of Pocket Tunnel Field Effect Transistor (포켓 구조 터널링 전계효과 트랜지스터의 2D 터널링 효과)

  • Ahn, Tae-Jun;Yu, Yun Seop
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
    • /
    • 2017.10a
    • /
    • pp.243-244
    • /
    • 2017
  • This paper introduces about the difference between the tunneling currents in the 1D and 2D directions for the calculation of the band-to-band tunneling currents of the tunneling field effect transistors. In the two-dimensional tunneling, diagonal tunneling is not calculated in the one-dimensional tunneling so that more accurate tunneling current can be calculated. Simulation results show that the tunneling in the two - dimensional direction has no effect on the voltage above the threshold voltage, but it affects the subthreshold swing below the threshold voltage.

  • PDF

Wind Load Analysis of 61ton-class Container Crane using the Computation Fluid Dynamics (61ton 컨테이너 크레인의 전산유동해석을 통한 풍하중 분석)

  • Lee, Su-Hong;Lee, Seong-Wook;Han, Dong-Seop;Kim, Tae-Hyung;Han, Geun-Jo
    • Journal of Navigation and Port Research
    • /
    • v.32 no.3
    • /
    • pp.251-255
    • /
    • 2008
  • Container cranes are vulnerable structure about difficult weather conditions bemuse there is no shielding facility to protect them from the strong wind. This study was carried out to analyze the wind load which have an effect on container crane according to the various wind direction. The container crane is a model of a 61-ton class that used broadly in the current ports. The external fluid field was figured as a cylinder which was set up $500m{\times}200m$. In this study, we applied mean wind load conformed to 'Design Criteria of Wind Load' in 'Load Criteria of Building Structures' and an external fluid field was divided as interval of 10 degrees to analyze effect according to a wind direction In this conditions, we carried out the computation fluid dynamic analysis using the CFX-10. As we compared computation fluid dynamic analysis with wind tunnel test, we analyzed the wind load which was needed to design the container crane.

Effect of Plasma Oxidation lime on TMR Devices of CoFe/AlO/CoFe/NiFe Structure (절연막층의 플라즈마 산화시간에 따른 CoFe/AlO/CoFe/NiFe 구조의 터널자기저항 효과 연구)

  • 이영민;송오성
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.15 no.4
    • /
    • pp.373-379
    • /
    • 2002
  • We investigated the evolution of magnetoresistance and magnetic property of tunneling magnetoresistive(TMR) device with microstructure and plasma oxidation time. TMR devices have potential applications for non volatile MRAM and high density HDD reading head. We prepared the tunnel magnetoresistance(TMR) devices of Ta($50{\AA}$)/NiFe($50{\AA}$)/IrMn($150{\AA}$)/CoFe($50{\AA}$)/Al($13{\AA}$)-O/CoFe($40{\AA}$)/FiFe($400{\AA}$)/Ta(($50{\AA}$) structure which have $100{\times}100\mu\textrm{m}^2$ junction area on $2.5{\times}2.5\textrm{cm}^2$ Si/$SiO_2$(($1000{\AA}$) substrates by an inductively coupled plasma(ICP) magnetron sputter. We fabricated the insulating layer using an ICP plasma oxidation method by with various oxidation time from 30 sec to 360 sec, and measured resistances and magnetoresistance(MR) ratios of TMR devices. We found that the oxidized sample for oxidation time of 80 sec showed the highest MR radio of 30.31 %, while the calculated value regarding inhomogeneous current effect indicated 25.18 %. We used transmission electron microscope(TEM) to investigate microstructural evolution of insulating layer. Comparing the cross-sectional TEM images at oxidation time of 150 sec and 360 sec, we found that the thickness and thickness variation of 360 sec-oxidized insulating layer became 30% and 40% larger than those of 150 sec-oxidized layer, repectively. Therefore, our results imply that increase of thickness variation with oxidation time may be one of the major treasons of the MR decrease.

A numerical study on effects of drag coefficient of vehicle on jet fans in case of fire in road tunnels (도로터널 화재시 차량의 항력계수가 제연용 제연팬에 미치는 영향에 대한 해석적 연구)

  • Yoo, Yong-Ho;Yoo, Ji-Oh;Kim, Hyo Gyu
    • Journal of Korean Tunnelling and Underground Space Association
    • /
    • v.16 no.6
    • /
    • pp.553-560
    • /
    • 2014
  • The road tunnel install a vent for the purpose of ventilation and smoke control. Ventilation equipment capacity(number of jet fans) depends on from the condition that of the pressure and ventilation resistance. Pressure and the resistance under operating vehicle have affected on the drag coefficient. The drag coefficient of the tunnel have affected by the blockage effect and slipstream effects. However, when calculating the ventilation fan, are not properly consider taking into account such effects. Therefore, ventilation force may have been slightly overestimated. This paper describes the drag coefficient through a numerical analysis to calculate the equivalent resistance area that reflects the vehicle distance, and examined the equivalent resistance area. The ventilation coefficient corresponding to the result heavy vehicle mixing ratio of the present study was not clear. Equivalent resistance area had reduced by about 86% compared to the road design handbook current standards. Also it had analyzed and reduced to 62.2% compared to Korea Highway Corporation ventilation design criteria ratio, which is the old standard.

The Effect of Transcranial Direct Current Stimulation on Smartphone Addiction and Stress: a randomized controlled study

  • Lee, Eunsang
    • Physical Therapy Rehabilitation Science
    • /
    • v.10 no.1
    • /
    • pp.76-81
    • /
    • 2021
  • Objective: Smartphone addiction can cause forward head posture, carpal tunnel syndrome and depression, and anxiety. Various interventions have been proposed to resolve Smartphone addiction. However, research regarding the efficacy of these interventions remains lacking. This study was conducted to investigate the effect of tDCS (Transcranial Direct Current Stimulation) on smartphone addiction solution and stress reduction. Design: A randomized controlled trial. Methods: The participants were divided randomly into two group (tDCS vs. Control). tDCS was applied to 41 adults (22.95±2.76 years). The tDCS group was applied 2 mA, for 13 minutes twice over a 26 minute period (n1 = 21). The control (n2 = 20) was not applied after padding and was applied twice for 13 minutes over a 26 minute period. This study was conducted four times a week for a total of four weeks. Results: Smartphone addiction for tDCS showed significant improvement in the results in the S-score (p<0.05, 95% CI: 0.702, 4.922), and the result of heart rate (HR) and skin conductivity (SC) to stress. The tDCS group and control group showed no significant decrese in the results in the HR (p>0.05, 95% CI: -3.390, 8.332), but tDCS group showed significant decrese in the results in the SC (p<0.05, 95% CI: 0.060, 1.343) Conclusions: This study suggected that smartphone addiction treatment and decreses of stress. The use of tDCS will reduce the addiction rate of adults and reduce stress, so that possible side effects in society can be solved.

Magnetic Tunneling Effects in $Permalloy/Al_{2}O_{3}/Co$ Junction ($Permalloy/Al_{2}O_{3}/Co$ 접합의 자기터널 효과)

  • 이민숙;송현주;장현숙;김미양;이장로;이용호
    • Journal of the Korean Magnetics Society
    • /
    • v.3 no.1
    • /
    • pp.29-33
    • /
    • 1993
  • Magnetoresistance was studied for the ferromagnetic tunneling junction in $Permalloy/Al_{2}O_{3}/Co$ prepared by evaporation in a vacuum of $1{\times}10^{-6}$Torr. We measured voltage-current characteristic and magnetic valve effect of prepared ferromagnetic tunneling junction sample. We investigated field-dependency of tunnel resistance by Wheat-stone bridge method and measured magnetic hysteresis curve by vibrating sample magnetometer. The tunneling is confirmed by measuring voltage-current characteristic. The hysteresis curve of magnetoresistance corresponds well with that of magnetization. The magnetoresistance ratio ${\Delta}R/R$ is 0.6% at room temperature.

  • PDF