• 산업기술연구
• /
• 제24권B호
• /
• pp.107-116
• /
• 2004

This thesis is results of experimental works on the behavior of the cut-and-cover tunnel. Centrifuge model tests were performed to simulate the behavior of the cut-and-cover tunnels having cross sections of national road and subway tunnels. Model experiments were carried out with changing the cut slope and the slope of filling ground surface. Displacements of tunnel lining resulted from artificially accelerated gravitational force up to 40g of covered material used in model tests, were measured during centrifuge model tests. In model tests, Jumunjin Standard Sand with the relative density of 80 % and the zinc plates were used for the covered material and the flexible tunnel lining, respectively. Basic soil property tests were performed to obtain it's the property of Jumumjin Standard Sand. Shear strength parameters of Jumunjin Standard Sand were obtained by performing the triaxial compression tests. Direct shear tests were also carried out to find the mechanical properties of the interface between the lining and the covered material. Compared results model tests estimation with respect to displacements of the lining.

• 한국터널지하공간학회 논문집
• /
• 제5권1호
• /
• pp.43-54
• /
• 2003

현재 복개 터널구조물의 해석 및 설계에는 구조공학적 모델링 기법이 널리 적용되고 있으나, 이러한 구조공학적 모델링 기법은 지형적인 영향인자 및 soil arching 등과 같은 지반공학적 측면의 영향인자를 고려하기에 많은 어려움이 있다. 따라서, 본 연구에서는 복개 터널구조물의 합리적이고 경제적인 설계를 위하여 복개 터널구조물의 거동에 영향을 미치는 인자로써 콘크리트 라이닝과 성토체의 계면요소, 굴착사면의 경사, 이격거리 및 성토사면 등을 고려하여 지반공학적 모델링 기법을 이용한 수치해석 수행하였다. 이의 결과를 토대로 각 영향인자 변화에 따른 복개 터널구조물의 역학적 거동특성을 분석하였다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.406-406
• /
• 2016

To get high efficiency n-type crystalline silicon solar cells, passivation is one of the key factor. Tunnel oxide (SiO2) reduce surface recombination as a passivation layer and it does not constrict the majority carrier flow. In this work, the passivation quality enhanced by different chemical solution such as HNO3, H2SO4:H2O2 and DI-water to make thin tunnel oxide layer on n-type crystalline silicon wafer and changes of characteristics by subsequent annealing process and firing process after phosphorus doped amorphous silicon (a-Si:H) deposition. The tunneling of carrier through oxide layer is checked through I-V measurement when the voltage is from -1 V to 1 V and interface state density also be calculated about $1{\times}1012cm-2eV-1$ using MIS (Metal-Insulator-Semiconductor) structure . Tunnel oxide produced by 68 wt% HNO3 for 5 min on $100^{\circ}C$, H2SO4:H2O2 for 5 min on $100^{\circ}C$ and DI-water for 60 min on $95^{\circ}C$. The oxide layer is measured thickness about 1.4~2.2 nm by spectral ellipsometry (SE) and properties as passivation layer by QSSPC (Quasi-Steady-state Photo Conductance). Tunnel oxide layer is capped with phosphorus doped amorphous silicon on both sides and additional annealing process improve lifetime from $3.25{\mu}s$ to $397{\mu}s$ and implied Voc from 544 mV to 690 mV after P-doped a-Si deposition, respectively. It will be expected that amorphous silicon is changed to poly silicon phase. Furthermore, lifetime and implied Voc were recovered by forming gas annealing (FGA) after firing process from $192{\mu}s$ to $786{\mu}s$. It is shown that the tunnel oxide layer is thermally stable.

• 한국터널지하공간학회 논문집
• /
• 제16권4호
• /
• pp.403-415
• /
• 2014

최근, 기후변화에 따른 하절기 기온 상승으로 인하여 전력사용량이 급증하고 있다. 이에 따라 발전시설이 새로 준공되고 있으며, 생산된 전기를 도심지로 송전할 초고압 송전선로 시설의 필요성이 증가하고 있다. 쉴드 TBM을 이용한 기계화 터널 굴착공법은 기존의 재래식 공법에 비해 지반 침하와 지반에 전달되는 진동을 최소화 할 수 있는 장점이 있다. 도심지에서의 전력구터널 굴착을 위한 쉴드 TBM 공법이 증가함에도 불구하고, 전력구 쉴드 TBM 터널의 거동 분석에 관한 연구는 미비한 실정이다. 본 연구에서는 파쇄대를 포함하는 복합지반에서 파쇄대 너비, 각도에 따른 전력구 쉴드 TBM 터널의 거동 특성을 분석하고, 인터페이스 요소를 적용한 파쇄대와 연속체로 모델링한 파쇄대의 거동 특성을 비교하고자 한다. 쉴드 TBM을 이용한 터널 굴착은 3D FEM을 이용하여 시뮬레이션 하였다. 파쇄대의 방향과 크기의 변화에 따라 세그먼트 라이닝에 작용되는 축력, 전단력, 휨 모멘트를 검토하고 지표면에서의 연직변위를 분석하였다. FEM 해석으로 얻어진 결과와 안정성 분석에 기초하여, 전방의 파쇄대를 예측하여 터널 구조물의 안정성을 확보할 수 있다.

• 한국철도학회:학술대회논문집
• /
• 한국철도학회 2003년도 추계학술대회 논문집(II)
• /
• pp.579-584
• /
• 2003

In this study, anisotopic yield function is proposed for the numerical analysis of reinforced tunnel ground with grouting. For this, material properties of the reinforced ground both by equilibrium as well as kinematic condition along the interface and by the mean field theory of Eshelby (1957) and Zhao (1990) are compared with each other and, as a result, the advantage/disadvantage of the proposed models are summarized. Finally, reinforced ground around tunnel with grouting is analyzed numerically. A new anisotropic yield function model is shown to be more reliable than the previous one and the predicted result is agreeable with the experimental data available.

• Journal of Magnetics
• /
• 제8권1호
• /
• pp.36-44
• /
• 2003

Three topics which are related to technologies for developing of large capacity MRAM over Gbits are reviewed. First, it is stressed that inelastic-electron-tunnel-tunneling spectroscopy(IETS) is a powerfull method to investigate the interface state between magnetic electrodes and insulator. Second, magnetic tunnel junctions with small bias voltage dependence are introduced. Finally, fabrication method of carbon masks for very small magnetic tunnel junctions is demonstrated. These three topics were presented at 47^{th} MMM 2002 conference and each paper will appear in the proceedings.

• Journal of Magnetics
• /
• 제6권4호
• /
• pp.126-128
• /
• 2001

The effect of rapid thermal anneal (RTA) has been investigated on the properties of an FeMn exchange-biased magnetic tunnel junction (MTJ) using magnetoresistance and I-V measurements and transmission electron microscopy (TEM). The tunneling magnetoresistance (TMR) in an as-grown MTJ is found to be ∼27%, while the TMR in MTJs annealed by RTA increases with annealing temperature up to 300$\^{C}$, reaching ∼46%. A TEM image reveals a structural change in the interface of A1$_2$O$_3$layer for the MTJ annealed by RTA at 300$\^{C}$. The oxide barrier parameters are found to vary abruptly with annealing time within a few ten seconds. Our results demonstrate that the present RTA enhances the magnetoresistive properties of MTJs.

• 한국전기전자재료학회논문지
• /
• 제11권10호
• /
• pp.778-783
• /
• 1998

Film characteristics of thin ONO dielectric layers for MONOS(metal-oxide-nitride-oxide-semiconductor) EEPROM was investigated by TEM, AES and AFM. Seocnd derivative spectra of Auger Si LVV overlapping peak provide useful information fot chemical state analysis of superthin film. The ONO film with dimension of tunnel oxide 23$\AA$, nitride 33$\AA$, and blocking oxide 40$\AA$ was fabricated. During deposition of the LPCVD nitride film on tunnel oxide, this thin oxide was nitrized. When the blocking oxide was deposited on the nitride film, the oxygen not only oxidized the nitride surface, but diffused through the nitride. The results of ONO film analysis exhibits that it is made up of $SiO_2$ (blocking oxide)/O-rich SiON(interface)/N-rich SiON(nitride)/ O-rich SiON(tunnel oxide)

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
• /
• pp.29-29
• /
• 1999

The synthesis of layered structures on the nanometer scale has become essential for continued improvements in the operation of various electronic and magnetic devices. Abrupt metal-metal interfaces are desired for applications ranging from metallization in semiconductor devices to fabrication of magnetoresistive tunnel junctions for read heads on magnetic disk drives. In particular, characterizing the interface structure between various transition metals (TM) and aluminum is desirable. We have used the techniques of MeV ion backscattering and channeling (HEIS), x-ray photoemission (ZPS), x-ray photoelectron diffraction(XPD), low-energy ion scattering (LEIS), and low-energy electron diffraction(LEED), together with computer simulations using embedded atom potentials, to study solid-solid interface structure for thin films of Ni, Fe, Co, Pd, Ti, and Ag on Al(001), Al(110) and Al(111) surfaces. Considerations of lattice matching, surface energies, or compound formation energies alone do not adequately predict our result, We find that those metals with metallic radii smaller than Al(e.g. Ni, Fe, Co, Pd) tend to form alloys at the TM-Al interface, while those atoms with larger atomic radii(e.g. Ti, Ag) form epitaxial overlayers. Thus we are led to consider models in which the strain energy associated with alloy formation becomes a kinetic barrier to alloying. Furthermore, we observe the formation of metastable fcc Ti up to a critical thickness of 5 monolayers on Al(001) and Al(110). For Ag films we observe arbitrarily thick epitaxial growth exceeding 30 monolayers with some Al alloying at the interface, possible driven by interface strain relief. Typical examples of these interface structures will be discussed.

• 한국자기학회:학술대회 개요집
• /
• 한국자기학회 2004년도 동계학술연구발표회 논문개요집
• /
• pp.140-141
• /
• 2004