• Korean Journal of Optics and Photonics
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• v.14 no.3
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• pp.321-326
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• 2003

We constructed grating- tuned external cavity semiconductor lasers using Littman and Littrow configuration, for which the wavelengths are tuned by rotation of the grating. This wavelength tunable semiconductor laser is one of the main devices of WDM optical communication. In Littman configuration, the wavelength range of about 60 nm (The C- and L-band range of 1,530~1,590 nm) was obtained by changing the incidence angle of the grating about $\pm$1$^{\circ}$ from the incidence angle of 70$^{\circ}$. In the 40 nm tuning range, the output power variation was less than 1.25 ㏈ and the side mode suppression ratio(SMSR) was 32 ㏈. In Littrow configuration (The incidence angle and the first order diffraction angle is the same, i.e. $\alpha$=$\delta$), the wavelength tuning range was about 80 nm for the same conditions used in Littman configuration except the incidence angle ($\alpha$=49$^{\circ}$). In 60 nm tuning range, the output power variation was less than 1.5 ㏈ and SMSR was 35 ㏈.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.234-238
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• 2003

In this work, we have designed a fully integrated 2.4GHz LC-tuned voltage-controlled oscillator (VCO) with multiple tuning inputs for a $0.25-{\mu}m$ standard CMOS Process. The design of voltage-controlled oscillator is based on an LC-resonator with a spiral inductor of octagonal type and pMOS-varactors. Only two metal layer have been used in the designed inductor. The frequency tuning is achieved by using parallel pMOS transistors as varactors and back-gate tuned pMOS transistors in an active region. Coarse tuning is achieved by using 3-bit pMOS-varactors and fine tuning is performed by using back-gate tuned pMOS transistors in the active region. When 3-bit digital and analog inputs are applied to the designed circuits, voltage-controlled oscillator shows the tuning feature of frequency range between 2.3 GHz and 2.64 GHz. At the power supply voltage of 2.5 V, phase noise is -128dBc/Hz at 3MHz offset from the carrier, Total power dissipation is 7.5 mW.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.3
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• pp.34-41
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• 2011

This paper presents a wide tuning range, fine-resolution DCO (Digitally Controlled Oscillator) with an active inductor. In order to control the frequency of the DCO, the transconductance of the active inductor is tuned digitally. In addition, the DCO gain needs to be calibrated digitally to compensate for gain variations. To cover the wide tuning range, an automatic three-step coarse tuning scheme is proposed. The DCO total frequency tuning range is 1.4 GHz (2.1 GHz to 3.5 GHz), it is 58 % at 2.4 GHz. An effective frequency resolution is 0.14 kHz/LSB. The proposed DCO is implemented in 0.13 ${\mu}m$ CMOS process. The total power consumption is 6.6 mW from a 1.2 V supply voltage. The phase noise of the DCO output at 2.4 GHz is -120.67 dBc/Hz at 1 MHz offset.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.591-592
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• 2008

• Korean Journal of Optics and Photonics
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• v.7 no.4
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• pp.370-374
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• 1996

A Superstructure Grating(SSG) Distributed-Bragg-Reflector(DBR) laser has a broad tuning range with a good mode suppression ratio. However, gaps of channel are observed in the wavelength-tuning characteristics of an SSGDBR laser which employs linearly-chirped DBR mirrors. We found by numerical simulation that the gaps may be attributed to the nonuniform reflection-peak heights of a linearly-chirped DBR mirrors. We propose a nonlinearly chirped grating DBR mirror structure that makes reflection-peak heights almost uniform. Therefore a nonlinearly chirped grating structure can be employed in an extended tuning range semiconductor laser to achieve gap-free tuning and low threshold current operation simultaneously.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.10 s.340
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• pp.19-28
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• 2005

In this paper, we analyzed tuning characteristics of the widely tunable SGDFB laser diode integrated with SGDBR. The improved time-domain model is used to analyse the laser diode. From the numerical analysis, the length of phase control region in the SGDFB section influences on the output power and the tuning range. Also, it was confirmed that the tuning range is affected by the length of the laser diode, the residual reflectivity at the facet, and the position of the facet.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.4 s.95
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• pp.345-350
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• 2005

An X-band push-push VCO for low cost applications is proposed. The designed push-push oscillator achieves a wide tuning range in the X-band by the collector bias tuning instead of extra varactor diodes. The measurement shows a wide tuning bandwidth of $900\;\cal{MHz}\;from\;10.9\;\cal{GHz}\;to\;11.8\;\cal{GHz}$ with a drain bias voltage varying from 4 to 9 V, excellent fudamental suppression of $-30\;\cal{dBc}$ and good phase noise of $-115\;\cal{dBc/Hz}\;@\;1\;\cal{MHz}$ offset.

• ETRI Journal
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• v.27 no.5
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• pp.551-556
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• 2005

We have demonstrated a high-power widely tunable sampled grating distributed Bragg reflector (SGDBR) laser integrated monolithically with a semiconductor optical amplifier (SOA) having a lateral tapered waveguide, which is the first to emit a fiber-coupled output power of more than 10 dBm using a planar buried heterostructure (PBH). The output facet reflectivity of the integrated SOA using a lateral tapered waveguide and two-layer AR coating of $TiO_2\;and\;SiO_2$ was lower than $3\;{\times}\;10^{-4}\;over$ a wide bandwidth of 85 nm. The spectra of 40 channels spaced by 50 GHz within the tuning range of 33 nm were obtained by a precise control of SG and phase control currents. A side-mode suppression ratio of more than 35 dB was obtained in the whole tuning range. Fiber-coupled output power of more than 11 dBm and an output power variation of less than 1 dB were obtained for the whole tuning range.

• ETRI Journal
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• v.27 no.5
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• pp.473-483
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• 2005

In this paper, we propose two LC voltage-controlled oscillators (VCOs) that improve both phase noise and tuning range. With both 1/f induced low-frequency noise and low-frequency thermal noise around DC or around harmonics suppressed significantly by the employment of a current-current negative feedback (CCNF) loop, the phase noise in the CCNF LC VCO has been improved by about 10 dB at 6 MHz offset compared to the conventional LC VCO. The phase noise of the CCNF VCO was measured as -112 dBc/Hz at 6 MHz offset from 5.5 GHz carrier frequency. Also, we present a bandwidth-enhanced LC VCO whose tuning range has been increased about 250 % by connecting the varactor to the bases of the cross-coupled pair. The phase noise of the bandwidth-enhanced LC-tank VCO has been improved by about 6 dB at 6 MHz offset compared to the conventional LC VCO. The phase noise reduction has been achieved because the DC-decoupling capacitor Cc prevents the output common-mode level from modulating the varactor bias point, and the signal power increases in the LC-tank resonator. The bandwidth-enhanced LC VCO represents a 12 % bandwidth and phase noise of -108 dBc/Hz at 6 MHz offset.

• Journal of the Optical Society of Korea
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• v.18 no.2
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• pp.162-166
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• 2014

The impact of booster section length made from passive erbium-doped fiber (EDF) on the L-band multiwavelength Brillouin-Erbium fiber laser (MBEFL) is studied experimentally in this paper. The influence on the performance of MBEFL in term of number of generated Stokes lines, tuning range and lasing threshold were investigated. A comparison was made between MBEFL without a booster section and with booster sections of different lengths. Through comparative study and at fixed BP power and 100mW of 1480 pump power, longer passive EDF length of 5m exhibits the highest average number of Stokes lines of 23 with tuning range of 14nm. In contrast, shorter passive EDF length of 1m shows the highest tuning range of 17nm and an average number of 21 Stokes lines.