• Transactions of the Korean hydrogen and new energy society
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• v.27 no.3
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• pp.318-327
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• 2016

In order to improve the performance of temperature field measurements by CT-TDLAS (Computer Tomography Tunable Diode Laser Absorption Spectroscopy), a new reconstruction algorithm, named two-ratios-of-three-peaks method is proposed in this paper. Further, two methods for selecting appropriate initial values of the iterative calculation of CT-TDLAS are proposed. One is MLOS (multiplicative line of sight) method and the other one is ALOS (additive line of sight) method. Two-ratios-of-three-peaks (2R3P) algorithm combined with MART (multiplicative algebraic reconstruction technique) is finally developed for the enhancements of reconstructive calculations. The results have been compared with those obtained by the conventional one-ratio-of-two-peaks (1R2P) algorithm. In order to evaluate the performance of this algorithm, numerical test has been performed using phantom Gaussian temperature distributions with $11{\times}11$ square mesh. The performance of the constructed algorithm has been demonstrated by comparing the results obtained in actual burner experiments with those obtained by thermocouples. It has been verified that 2R3P algorithm with MART and MLOS showed best performance than that of 1R2P algorithm.

• Clean Technology
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• v.26 no.4
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• pp.293-303
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• 2020

According to the World Health Organization (WHO), air pollution is a typical health hazard, resulting in about 7 million premature deaths each year. Sulfur dioxide (SO2) is one of the major air pollutants, and the combustion process with sulfur-containing fuels generates it. Measuring SO2 generation in large combustion environments in real time and optimizing reduction facilities based on measured values are necessary to reduce the compound's presence. This paper describes the concentration measurement for SO2, a particulate matter precursor, using a wavelength modulation spectroscopy (WMS) of tunable diode laser absorption spectroscopy (TDLAS). This study employed a quantum cascade laser operating at 7.6 ㎛ as a light source. It demonstrated concentration measurement possibility using 64 multi-absorption lines between 7623.7 and 7626.0 nm. The experiments were conducted in a multi-pass cell with a total path length of 28 and 76 m at 1 atm, 296 K. The SO2 concentration was tested in two types: high concentration (1000 to 5000 ppm) and low concentration (10 ppm or less). Additionally, the effect of H2O interference in the atmosphere on the measurement of SO2 was confirmed by N2 purging the laser's path. The detection limit for SO2 was 3 ppm, and results were compared with the electronic chemical sensor and nondispersive infrared (NDIR) sensor.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.287.1-287.1
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• 2016

Three-dimensional (3-D) semiconductor nanoarchitectures, including nano- and micro- rods, pyramids, and disks, are emerging as one of the most promising elements for future optoelectronic devices. Since these 3-D semiconductor nanoarchitectures have many interesting unconventional properties, including the use of large light-emitting surface area and semipolar/nonpolar nano- or micro-facets, numerous studies reported on novel device applications of these 3-D nanoarchitectures. In particular, 3-D nanoarchitecture devices can have noticeably different current spreading characteristics compared with conventional thin film devices, due to their elaborate 3-D geometry. Utilizing this feature in a highly controlled manner, color-tunable light-emitting diodes (LEDs) were demonstrated by controlling the spatial distribution of current density over the multifaceted GaN LEDs. Meanwhile, for the fabrication of high brightness, single color emitting LEDs or laser diodes, uniform and high density of electrical current must be injected into the entire active layers of the nanoarchitecture devices. Here, we report on a new device structure to inject uniform and high density of electrical current through the 3-D semiconductor nanoarchitecture LEDs using metal core inside microtube LEDs. In this work, we report the fabrications and characteristics of metal-cored coaxial $GaN/In_xGa_{1-x}N$ microtube LEDs. For the fabrication of metal-cored microtube LEDs, $GaN/In_xGa_{1-x}N/ZnO$ coaxial microtube LED arrays grown on an n-GaN/c-Al2O3 substrate were lifted-off from the substrate by wet chemical etching of sacrificial ZnO microtubes and $SiO_2$ layer. The chemically lifted-off layer of LEDs were then stamped upside down on another supporting substrates. Subsequently, Ti/Au and indium tin oxide were deposited on the inner shells of microtubes, forming n-type electrodes of the metal-cored LEDs. The device characteristics were investigated measuring electroluminescence and current-voltage characteristic curves and analyzed by computational modeling of current spreading characteristics.