• 한국정보통신학회논문지
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• 제12권1호
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• pp.137-142
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• 2008

본 논문에서는 $Low-V_T$ 트랜지스터가 필요 없는 로직공정으로 Parasitic NPN BJT를 이용하여 저 전압에서 동작 가능한 밴드갭 기준전압 발생기 회로를 제안하였다. $0.18{\mu}m$ triple-well 공정을 사용한 BGR회로를 측정 한 결과 VREF의 평균전압은 0.72V $3{\sigma}$는 45.69mV로 양호하게 측정되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.246-246
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• 2016

Tungsten-nitrogen (W-N) co-doping has been known to enhance the photocatalytic activity of anatase titania nanoparticles by utilizing visible light. The doping effects are, however, largely dependent on calcination or annealing conditions, and thus, the massive production of quality-controlled photocatalysts still remains a challenge. Using density functional theory (DFT) thermodynamics and time-dependent DFT (TDDFT) computations, we investigate the atomic structures of N doping and W-N co-doping in anatase titania, as well as the effect of the thermal processing conditions. We find that W and N dopants predominantly constitute two complex structures: an N interstitial site near a Ti vacancy in the triple charge state and the simultaneous substitutions of Ti by W and the nearest O by N. The latter case induces highly localized shallow in-gap levels near the conduction band minimum (CBM) and the valence band maximum (VBM), whereas the defect complex yielded deep levels (1.9 eV above the VBM). Electronic structures suggest that substitutions of Ti by W and the nearest O by N improves the photocatalytic activity of anatase by band gap narrowing, while defective structure degrades the activity by an in-gap state-assisted electron-hole recombination, which explains the experimentally observed deep level-related photon absorption. Through the real-time propagation of TDDFT (rtp-TDDFT), we demonstrate that the presence of defective structure attracts excited electrons from the conduction band to a localized in-gap state within a much shorter time than the flat band lifetime of titania. Based on these results, we suggest that calcination under N-rich and O-poor conditions is desirable to eliminate the deep-level states to improve photocatalysis.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.235.1-235.1
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• 2015

Artificially-engineered materials, whose electromagnetic properties are not available in nature, such as negative reflective index, are called metamaterials (MMs). Although many scientists have investigated MMs for negative-reflective-index properties at the beginning, their interests have been extended to many other fields comprising perfect lenses. Among various kinds of MMs, metamaterial absorbers (MM-As) mimic the blackbody through minimizing transmission and reflection. In order to maximize absorption, the real and the imaginary parts of the permittivity and permeability of MM-As should be adjusted to possess the same impedance as that of free space. We propose a dual-wide-band and polarization-independent MM-A. It is basically a triple-layer structure made of metal/dielectric multilayered truncated cones. The multilayered truncated cones are periodically arranged and play a role of meta-atoms. We realize not only a wide-band absorption, which utilizes the fundamental magnetic resonances, but also another wide-band absorption in the high-frequency range based on the third-harmonic resonances, in both simulation and experiment. In simulation, the absorption bands with absorption higher than 90% are 3.93 - 6.05 GHz and 11.64 - 14.55 GHz, while the experimental absorption bands are in 3.88 - 6.08 GHz and 9.95 - 13.84 GHz. The physical origins of these absorption bands are elucidated. Additionally, it is also polarization-independent because of its circularly symmetric structures. Our design is scalable to smaller size for the infrared and the visible ranges.

• 한국항공우주학회지
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• 제38권12호
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• pp.1223-1231
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• 2010

본 논문에서 소개하는 위성 통신 안테나는 대용량 데이터 전송을 위한 위성 송수신 시스템에 응용되어 추가적인 급전부 교체나 다른 기구 형상 변경 없이 X, Ku와 Ka 3중 대역의 전파 신호를 동시에 송수신할 수 있다. 설계된 안테나는 오프셋 파라볼라 안테나 형태로 2중 대역(X/Ka 대역) 급전혼, 단일대역(Ku 대역) 급전혼, 주파수 선택막(FSS : frequency selective surface) 특성을 갖는 부반사판 및 파라볼라 주반사판으로 구성되어 있다. 주반사판의 초점에는 2중 대역 급전혼이 위치하며, FSS 부반사판으로 이미지 초점을 만들어 단일 대역 급전혼이 설치되어 운용된다. 본 안테나는 전기적 특성이 국내 위성 환경에 부합되도록 3차원 EM 시뮬레이터를 이용하여 설계하였고, 측정결과 X/Ku/Ka 대역에서 안테나 이득이 각각 31.6 dBi, 36.8 dBi, 40.8 dBi 이상, 교차편파는 각각 21.7 dB, 26.6 dB, 그리고 25.2 dB 이상의 특성으로 목표 성능을 만족함을 확인하였다.

• 한국인터넷방송통신학회논문지
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• 제14권4호
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• pp.213-217
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• 2014

본 논문에서는 WLAN/WiMAX 시스템에 적용 가능한 모노폴 마이크로스트립 안테나를 설계하였다. 제안된 모노폴 안테나의 기판은 FR-4이고 크기는 $30mm{\times}40mm$이다. 제안된 안테나는 평면형 모노폴 설계를 기본구조로 구성함으로서 WLAN/WiMAX 대역을 포함하는 삼중대역 특성을 갖도록 설계하였다. 최적화된 파라메타를 얻기 위해 상용 툴(CST's Microwave Studio Program)을 사용하여 시뮬레이션 하였으며 안테나 성능에 민감하게 작용하는 파라메타를 찾아내서 최적화된 수치를 얻었다. 얻어진 최적화된 수치를 사용하여 제안된 안테나를 설계하였다. 따라서 제안된 안테나는 WLAN/WiMAX 대역을 동시에 만족하였다. 그리고 WLAN/WiMAX 대역에서 이득과 방사패턴의 특성을 얻었다.

• 한국전자통신학회논문지
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• 제7권3호
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• pp.465-473
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• 2012

본 논문은 WLAN/WiMAX 시스템에 적용 가능한 이중대역 평면형 모노폴 안테나를 설계, 제작 및 측정하였다. 제안된 안테나는 2개의 훅크 모양의 선로, 비대칭 접지면 그리고 접지면에 사각 슬릿을 갖도록 설계하였다. 측정과 시뮬레이션 결과사이의 데이터가 잘 일치하고 있는 데이터를 얻었으며 -10dB 임피던스 대역폭을 기준으로 WLAN과 WiMAX 대역을 동시에 만족하고 있음을 확인하였다. 또한 2D 그리고 3D 방사패턴과 이득에 측정결과가 제시되고 논의되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.322.1-322.1
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• 2014

Many research groups have studied tandem or multi-junction cells to overcome this low efficiency and degradation. In multi-junction cells, band-gap engineering of each absorb layer is needed to absorb the light at various wavelengths efficiently. Various absorption layers can be formed using multi-junctions, such as hydrogenated amorphous silicon carbide (a-SiC:H), amorphous silicon germanium (a-SiGe:H) and microcrystalline silicon (${\mu}c$-Si:H), etc. Among them, ${\mu}c$-Si:H is the bottom absorber material because it has a low band-gap and does not exhibit light-induced degradation like amorphous silicon. Nevertheless, ${\mu}c$-Si:H requires a much thicker material (>2 mm) to absorb sufficient light due to its smaller light absorption coefficient, highlighting the need for a high growth rate for productivity. ${\mu}c$-SiGe:H has a much higher absorption coefficient than ${\mu}c$-Si:H at the low energy wavelength, meaning that the thickness of the absorption layer can be decreased to less than half that of ${\mu}c$-Si:H. ${\mu}c$-SiGe:H films were prepared using 40 MHz very high frequency PECVD method at 1 Torr. SiH4 and GeH4 were used as a reactive gas and H2 was used as a dilution gas. In this study, the ${\mu}c$-SiGe:H layer for triple solar cells applications was performed to optimize the film properties.

• 한국전기전자재료학회논문지
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• 제33권2호
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• pp.99-104
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• 2020

In this study, we fabricated a metamorphic high-electron-mobility transistor (mHEMT) device with a T-type gate structure for the implementation of W-band monolithic microwave integrated circuits (MMICs) and investigated its characteristics. To fabricate the mHEMT device, a recess process for etching of its Schottky layer was applied before gate metal deposition, and an e-beam lithography using a triple photoresist film for the T-gate structure was employed. We measured DC and RF characteristics of the fabricated device to verify the characteristics that can be used in W-band MMIC design. The mHEMT device exhibited DC characteristics such as a drain current density of 747 mA/mm, maximum transconductance of 1.354 S/mm, and pinch-off voltage of -0.42 V. Concerning the frequency characteristics, the device showed a cutoff frequency of 215 GHz and maximum oscillation frequency of 260 GHz, which provide sufficient performance for W-band MMIC design and fabrication. In addition, active and passive modeling was performed and its accuracy was evaluated by comparing the measured results. The developed mHEMT and device models could be used for the fabrication of W-band MMICs.

• 전기전자학회논문지
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• 제8권1호
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• pp.86-95
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• 2004

본 논문에서는 기존의 연구에서 이루어진 HiperLAN 대역의 무선 LAN용 U-슬롯 모양의 안테나에 HiperLAN 1/2 및 5GHz 대역의 ISM 밴드의 대역폭 범위까지 다룰 수 있는 안테나를 설계하고, 제작하였다. 기본 U-슬롯 모양의 구조에 두 개의 U-슬롯 모양을 추가하여 새로운 모델을 제안하였다. 접지면과 기판 사이에 공기층을 삽입하여 VSWR<1.5에서 충분한 대역을 얻을 수 있도록 하였고, 안테나의 이득은 $6.27{\sim}9.82dBi$를 얻었다. 방사 패턴은 주파수 대역에서 안정된 패턴을 얻었다.

• 전력전자학회:학술대회논문집
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• 전력전자학회 1996년도 창립기념 전력전자학술발표회 논문집
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• pp.43-46
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• 1996

The carborne Automatic Train Control(ATC) system keeps automatically optimum train speed code signals from wayside(track) circuit equipment. If there is no response for braking against the over speed detected, the driver will be noticed instantly by visual and audible warning signals. And then the ATC processes into braking mode for safe train operations to prevent any hazards by over speed limit. In this paper we are introduced the novel ATC system which has triple constructed structure made by 32 bit floating point DSP(ADSP21020-20) and process dealed with frequency domain and time domain for detecting signals. Owing to these reason it is no needed several band pass filters used in conventional ATC systems to detect the speed limit frequency. Also system's reliability and tolerance are incremented by adopt to 2 out of 3 logic to the outputs decision.