• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.26-28
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• 2001

A Trench schottky diode with guard ring is proposed to improve the forward current density and reverse breakdown voltage. The simulation results by Silvaco have shown that the reverse breakdown voltage of the proposed device was found to be 22.1V while that of conventional trench device was 17.25V. The breakdown voltage of the proposed structure was 28.1% higher than that of the conventional trench structure.

• Journal of the Korean Society of Clothing and Textiles
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• v.36 no.8
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• pp.814-827
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• 2012

This study analyzed the presentation trend of a checklist method for trench coat designs. Through this analysis, this study examined the flow of trench coat designs and presents future design directions. Research was conducted in the following method. A total of 1,307 female trench coat photos were selected from the photos presented in the top 4 collections from 2006 to 2011. These photos were used for analysis and frequency analysis was conducted. Among the checklist methods presented in trench coats, the modification type was most common, followed by the elimination type, conversion type, combination type, minimization type, addition type, and magnification type, respectively. Checklist methods were continuously presented even while increasing and decreasing according to the year and season. This showed that it was highly possible for checklist methods to be continuously applied in future trench coat designs. Generally, a high frequency of appearance was shown in 2010 and during the F/W season. According to the development direction of future trench coat designs applied with the checklist method, it is predicted that the modification type and the elimination type (which have generally displayed high appearance frequency) will be continuously magnified in the future. In particular, it is expected modifications in structural details (which have showed an upward trend in 2011) will be further magnified.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.1
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• pp.27-30
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• 2004

In this paper, a new small size Lateral Trench Electrode Power MOSFET is proposed. This new structure, called "LTEMOSFET"(Lateral Trench Electrode Power MOSFET), is based on the conventional MOSFET. The entire electrode of LTEMOSFET is placed in trench oxide. The forward blocking voltage of the proposed LTEMOSFET is improved by 1.6 times with that of the conventional MOSFET. The forward blocking voltage of LTEMOSFET is 250V. At the same size, a increase of the forward blocking voltage of about 1.6 times relative to the conventional MOSFET is observed by using TMA-MEDICI which is used for analyzing device characteristics. Because the electrodes of the proposed device are formed in trench oxide, the electric field in the device are crowded to trench oxide. We observed that the characteristics of the proposed device was improved by using TMA-MEDICI and that the fabrication of the proposed device is possible by using TMA-TSUPREM4.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.3
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• pp.259-266
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• 2004

In this paper. a new two types of EST(Emitter Switched Thyristor) structures are proposed to improve the electrical characteristics including the current saturation capability. Besides, the two dimensional numerical simulations were carried out using MEDICI to verify the validity of the device and examine the electrical characteristics. First, a vortical trench electrode EST device is proposed to improve snap-back effect and its blocking voltage. Second, a dual trench gate EST device is proposed to obtain high voltage current saturation characteristics and high blocking voltage and to eliminate snap-back effect. The two proposed devices have superior electrical characteristics when compared to conventional devices. In the vertical trench electrode EST, the snap-back effect is considerably improved by using the vertical trench gate and cathode electrode and the blocking voltage is one times better than that of the conventional EST. And in the dual trench gate EST, the snap-back effect is completely removed by using the series turn-on and turn-off MOSFET and the blocking voltage is one times better than that of the conventional EST. Especially current saturation capability is three times better than that of the other EST.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.10
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• pp.889-895
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• 2008

This paper presents a comprehensive mathematical analysis and simulation of trench IGBT with the help of PIN-PNP combinational model. Since trench IGBT is characteristically influenced by PIN diode, it may be almost impossible to analyze the trench IGBT using PNP-MOS modeling methods, even PIN-MOS techniques which neglect the hole current components coming into p-base region. A new PIN-PNP complementary cooperational model is developed in order to make up the drawbacks of existing models. It would allow us to make qualitative analysis as well as simulation about switching and on-state characteristics of 1,700 V trench IGBT. Moreover, if we improve the PIN diode effects through the optimization of trench structure, trench IGBT is expected to be one of the most promising devices in the not only high-voltage but also high speed switching device field.

• Journal of IKEEE
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• v.18 no.4
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• pp.532-535
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• 2014

This paper analyzed thermal characteristics of super junction MOSFET using process and design parameters. Trench process is very important to super junction MOSFET process. We analyzed the difference of temperature, thermal resistance, total power consumption according to trench etch angle. As a result we obtained minimum value of temperature difference and thermal resistance at $89.3^{\circ}$ of trench etch angle. The electrical characteristics distribution of super junction MOSFET is not showed tendency according to trench etch angle. We need iterative experiments and simulation for optimal value of electrical characteristics. The super junction power MOSFET that has superior thermal characteristics will use automobile and industry.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.1
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• pp.6-11
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• 2005

In this paper, two types of vertical SIT(Static Induction Transistor) structures are proposed to improve their electrical characteristics including the blocking voltage. Besides, the two dimensional numerical simulations were carried out using ISE-TCAD to verify the validity of the device and examine the electrical characteristics. First, a trench gate region oxide power SIT device is proposed to improve forward blocking characteristics. Second, a trench gate-source region power SIT device is proposed to obtain more higher forward blocking voltage and forward blocking characteristics at the same size. The two proposed devices have superior electrical characteristics when compared to conventional device. In the proposed trench gate oxide power SIT, the forward blocking voltage is considerably improved by using the vertical trench oxide and the forward blocking voltage is 1.5 times better than that of the conventional vertical power SIT. In the proposed trench gate-source oxide power SIT, it has considerable improvement in forward blocking characteristics which shows 1500V forward blocking voltage at -10V of the gate voltage. Consequently, the proposed trench oxide power SIT has the superior stability and electrical characteristics than the conventional power SIT.

• Journal of the Korean Vacuum Society
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• v.16 no.5
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• pp.353-358
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• 2007

J-shaped superluminescent diodes (SLD) utilizing trench structure have been fabricated on the multiple quantum dots epi-structure with its ground state energy wavelength of $1.3\;{\mu}m$. It was observed that optical power was drastically increased up to 20 times in comparison with that of SLD without trench structure, The electroluminescence characteristics showed that the peak intensity of excited state was several ten times higher in the SLD with trench than without trench structure. It is explained that the optical power enhancement of J-shaped SLD with trench structure resulted from the drastic increase of peak intensity of excited state.

• Journal of Korean Society on Water Environment
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• v.24 no.1
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• pp.107-117
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• 2008

Infiltration facilities are effective instruments to mitigate flood and can increase base runoff in urban watersheds. In order to analyze effects of infiltration trenches physical model experiments were conducted. The physical model facility consists of two soil tanks, artificial rainfall generators, tensiometers, and piezometers. The experiment was conducted by nine times and each case differed in rainfall intensity, rainfall duration and the type of ground surface. Measured quantities in the experiments are as follows: surface runoff, subsurface runoff, trench pipe runoff, groundwater level, water content, etc. The following resulted from the model experiment: The volume of subsurface runoff at trench watershed was maximum 78.3% compared with rainfall. This value is bigger than that of ordinary rate of subsurface runoff, and shows a groundwater recharge effect of trench. The time of runoff passing through the trench became earlier and the volume of runoff became larger with the increase of inflow into the trench, while trench exfiltration into ground became relatively smaller. The results of this study presented above show that infiltration trenches are effective instruments to increase base runoff during dry periods.

• Journal of Electrical Engineering and Technology
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• v.9 no.3
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• pp.843-847
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• 2014

In Super Junction (SJ) MOSFETs, charge balance is the most important issue of the SJ fabrication process. In order to achieve the best electrical characteristics, such as breakdown voltage and on-resistance, the N-type and P-type drift regions must be fully depleted when the drain bias approaches the breakdown voltage, which is known as the charge balance condition. In conventional charge balance analysis, based on multi-epi process SJ MOSFETs, analytical model has only N, P pillar width and doping concentration parameter. But applying a conventional charge balance principle to trench filling process, easier than Multi-epi process, is impossible due to the missing of the trench angle parameter. To achieve much more superior characteristics of on-resistance in trench filling SJ MOFET, the appropriate trench angle is necessary. So in this paper, modulated charge balance analysis is proposed, in which a trench angle parameter is added. The proposed method is validated using the TCAD simulation tool.